ubp 100
Abstract: "line AMPLIFIER"
Text: Model UBP Universal Bi-Polar In-Line Amplifier DESCRIPTION The Model UBP bi-polar amplifier supplies a highly regulated bridge excitation voltage for the transducer and converts the millivolt signal of the transducer to a ±5 Vdc signal. The Universal In-line features two selectable excitation voltages, programmable gain settings, a wide adjustment range on the zero, and a
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008832-1-EN
ubp 100
"line AMPLIFIER"
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Sensotec pressure transducer
Abstract: Sensotec transducer Sensotec pressure wiring diagrams sensotec Sensotec transducer A Sensotec 60 pressure transducer Sensotec 42 Sensotec 43 Sensotec Pressure transducer A "Pressure Transducers" sensotec
Text: MODEL UBP UNIVERSAL IN-LINE TRANSDUCER AMPLIFIER BI-POLAR SUPPLY, VOLTAGE OUTPUT, LOW GAIN 5 to 166 mV/V 2080 Arlingate Lane, Columbus, Ohio 43228 • (614) 850-5000 Sensotec, Inc. 2080 Arlingate Lane Columbus, Ohio 43228 Copyright 1995 by Sensotec, Inc. all rights reserved
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e2p 25
Abstract: J-STD-020B M30L0R7000B0 M30L0R7000T0 M36L0R7040B0 M36L0R7040T0 M69AR024B
Text: M36L0R7040T0 M36L0R7040B0 128 Mbit Multiple Bank, Multi-Level, Burst Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 16 Mbit (1Mb x16) Pseudo SRAM
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M36L0R7040T0
M36L0R7040B0
M36L0R7040T0:
88C4h
M36L0R7040B0:
88C5h
54MHz
e2p 25
J-STD-020B
M30L0R7000B0
M30L0R7000T0
M36L0R7040B0
M36L0R7040T0
M69AR024B
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M69KR096A
Abstract: J-STD-020B M30L0R8000B0 M30L0R8000T0 M36L0R8060B0 M36L0R8060T0
Text: M36L0R8060T0 M36L0R8060B0 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory
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M36L0R8060T0
M36L0R8060B0
M36L0R8060T0:
880Dh
M36L0R8060B0:
880Eh
54MHz
M69KR096A
J-STD-020B
M30L0R8000B0
M30L0R8000T0
M36L0R8060B0
M36L0R8060T0
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M36P0R9070E0
Abstract: M58PR512J M69KB128AB
Text: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM
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M36P0R9070E0
128Mbit
TFBGA107
108MHz,
66MHz
M36P0R9070E0
M58PR512J
M69KB128AB
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nor flash 1.8V
Abstract: PSRAM M36P0R9060E0 M58PR512J
Text: M36P0R9060E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory
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M36P0R9060E0
TFBGA107
108MHz,
66MHz
nor flash 1.8V
PSRAM
M36P0R9060E0
M58PR512J
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m36w0r6050u
Abstract: m36w0r6040u M36W0R5040 M36W0R5040u M36W0R6050U4 M36W0R6040U4 M69KM024A ADQ14 M69KM048A ADQ15
Text: M36W0Rx0x0UL4 32- or 64-Mbit mux I/O, multiple bank, multilevel, burst flash memory, 16- or 32-Mbit PSRAM, 1.8 V supply MCP Features • ■ ■ Multichip package – 1 die of 32 Mbit (2 Mbit x 16) or 64 Mbit (4 Mbit x 16) mux I/O multiple bank, multilevel, burst) flash memory
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M36W0Rx0x0UL4
64-Mbit
32-Mbit
M36W0R5040U4:
8828h
M36W0R5040L4:
8829h
M36W0R6040U4
M36W0R6050U4:
88C0h
m36w0r6050u
m36w0r6040u
M36W0R5040
M36W0R5040u
M36W0R6050U4
M69KM024A
ADQ14
M69KM048A
ADQ15
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M36P0R9070E0
Abstract: M58PR512J M69KB128AB
Text: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM
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M36P0R9070E0
128Mbit
TFBGA107
108MHz,
66MHz
M36P0R9070E0
M58PR512J
M69KB128AB
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M36W0R5040
Abstract: m36w0r5040t M36W0R5040T5 M36W0R5040B5 8815h 8814h
Text: M36W0R5040T5 M36W0R5040B5 32-Mbit 2 Mbits x16, multiple bank, burst flash memory and 16-Mbit (1 Mbit ×16) PSRAM, 1.8 V supply, MCP Features • ■ ■ ■ Multi-chip package – 1 die of 32-Mbit (2 Mbits x16, multiple bank, burst) flash memory – 1 die of 16 Mbit (1 Mbit x16) PSRAM
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M36W0R5040T5
M36W0R5040B5
32-Mbit
16-Mbit
M36W0R5040T5:
8814h
M36W0R5040B5:
8815h
TFBGA88
M36W0R5040
m36w0r5040t
M36W0R5040B5
8814h
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Untitled
Abstract: No abstract text available
Text: M36L0R7040T0 M36L0R7040B0 128 Mbit Multiple Bank, Multi-Level, Burst Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 16 Mbit (1Mb x16) Pseudo SRAM
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M36L0R7040T0
M36L0R7040B0
M36L0R7040T0:
88C4h
M36L0R7040B0:
88C5h
54MHz
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M36P0R8070E0
Abstract: M58PR256J M69KB128AA strataflash 256 x 2 Mbits ECR15
Text: M36P0R8070E0 256 Mbit x16, multiple bank, multilevel, burst Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package Features • ■ Multichip package – 1 die of 256 Mbit (16 Mb x 16, multiple bank, multilevel, burst) Flash memory – 1 die of 128 Mbit (8 Mb x16) PSRAM
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M36P0R8070E0
TFBGA107
M36P0R8070E0
M58PR256J
M69KB128AA
strataflash 256 x 2 Mbits
ECR15
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PSRAM
Abstract: M36P0R9060E0 M58PR512J M69KB096AM M58PRxxxJ
Text: M36P0R9060E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory
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M36P0R9060E0
TFBGA107
108MHz,
66MHz
PSRAM
M36P0R9060E0
M58PR512J
M69KB096AM
M58PRxxxJ
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M30L0T7000T0
Abstract: J-STD-020B M36L0T7050B0 M36L0T7050T0 M69AW048B Flash Memory 32Mbit M30L0T7000
Text: M36L0T7050T0 M36L0T7050B0 128Mbit Multiple Bank, Multi-Level, Burst Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 128Mbit (8Mx16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 32Mbit (2Mx16) Pseudo SRAM
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M36L0T7050T0
M36L0T7050B0
128Mbit
32Mbit
8Mx16,
2Mx16)
M36L0T7050T0:
88C4h
M30L0T7000T0
J-STD-020B
M36L0T7050B0
M36L0T7050T0
M69AW048B
Flash Memory 32Mbit
M30L0T7000
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M58WR064KT
Abstract: M36W0R M36W0R604
Text: M36W0R6040T3 M36W0R6040B3 M36W0R6050T3 M36W0R6050B3 64-Mbit 4 Mbits x16, multiple bank, burst Flash memory and 16-Mbit (1 Mbit ×16) or 32-Mbit (2 Mbits x16) PSRAM MCP Preliminary Data Features • Multichip package – 1 die of 64 Mbits (4 Mbits x16) flash
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M36W0R6040T3
M36W0R6040B3
M36W0R6050T3
M36W0R6050B3
64-Mbit
16-Mbit
32-Mbit
M36W0R6050T3:
8810h
M58WR064KT
M36W0R
M36W0R604
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M36W0R5040
Abstract: M36W0R5040T7 M69KB024AB M36W0R6040T7 M58WR032KT M36W0R5030T7 Numonyx MCP
Text: M36W0Rx0x0x7 32- or 64-Mbit 2 or 4 Mbits x 16, multiple bank, burst flash memory and 8-Mbit (512 Kbit x16) or 16-Mbit (1 Mbit x 16) PSRAM MCP Features Multichip package – 1 die of 32 or 64 Mbits (2 or 4 Mbits x 16) flash memory – 1 die of 8 Mbits (512 Kbits x 16) or 16 Mbits
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M36W0Rx0x0x7
64-Mbit
16-Mbit
32-Mbit
M36W0R5030T7
M36W0R5040T7:
8814h
M36W0R5030B7
M36W0R5040B7:
8815h
M36W0R5040
M36W0R5040T7
M69KB024AB
M36W0R6040T7
M58WR032KT
Numonyx MCP
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PSRAM
Abstract: M36L0R7060B1 M36L0R7060T1 M58LR128HB M58LR128HT ubp 100
Text: M36L0R7060T1 M36L0R7060B1 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash memory
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M36L0R7060T1
M36L0R7060B1
M36L0R7060T1:
88C4h
M36L0R7060B1:
88C5h
TFBGA88
PSRAM
M36L0R7060B1
M36L0R7060T1
M58LR128HB
M58LR128HT
ubp 100
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Untitled
Abstract: No abstract text available
Text: M36P0R8070E0 256 Mbit x16, multiple bank, multilevel, burst Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package Features • ■ Multichip package – 1 die of 256 Mbit (16 Mb x 16, multiple bank, multilevel, burst) Flash memory – 1 die of 128 Mbit (8 Mb x16) PSRAM
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M36P0R8070E0
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23LIST
Abstract: No abstract text available
Text: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM
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M36P0R9070E0
128Mbit
TFBGA107
M36P0R9070E0ZAQF
M36P0R9070E0
23LIST
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PSRAM
Abstract: M36P0R9070E0 M58PR512J M69KB128AA
Text: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA Features summary • ■ ■ ■ Multi-chip package – 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory
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M36P0R9070E0
128Mbit
TFBGA107
2112-bit
64-bit
PSRAM
M36P0R9070E0
M58PR512J
M69KB128AA
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M36L0R7050U3
Abstract: M69KM024A M36L0R7050UL3 ADQ14 M36L0R8060L3 Numonyx MCP M69KM048AB
Text: M36L0Rx0x0UL3 128- or 256-Mbit mux I/O, multiple bank, multilevel, burst flash memory, and 32- or 64-Mbit PSRAM, 1.8 V supply MCP Target Specification Features • ■ ■ Multichip package – 1 die of 128 Mbits (8 Mbits x16) or 256 Mbits (16 Mbits x16), mux I/O multiple
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M36L0Rx0x0UL3
256-Mbit
64-Mbit
M36L0R7050U3/M36L0R7060U3:
882Eh
M36L0R8050U3/M36L0R8060U3:
881Ch
M36L0R7050L3/M36L0R7060L3:
882Fh
M36L0R8050L3/M36L0R8060L3:
M36L0R7050U3
M69KM024A
M36L0R7050UL3
ADQ14
M36L0R8060L3
Numonyx MCP
M69KM048AB
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Untitled
Abstract: No abstract text available
Text: Mat i ng face arc. tn I FT If chiplpx FO m u l t i mode 50/125 p 617S4-90 ExED Y HEE P r o t e c t i on c a p i_o Heat shrink t ubp/ t& □ KO=> P r o t e c t ion l e v e l : I P20 T e m p e r a t u r e r a n g e : -10° C . . . + 7 0 ° C 11 33012410500005
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617S4-90
33012410O
D-32339
241XXX0005
100210841/UGD/008/A
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Untitled
Abstract: No abstract text available
Text: UbP¥ } 2 3105 K a sh iw a C o u rt Torrance. C A 9 0505 Phone: 800 5 7 9 -4 8 7 5 /(3 1 0 ) 534.1505 Fax (3 1 0 )5 3 4 .1 4 2 4 E -m ail w ebm aster@ led tro nics co m W ebsite: v a v w ledtrontcs com LEDTRONICS, INC: THE FUTURE OF LIGHT L u m in a ire P h o to m e tric R ep ort
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PS-600-SIW
-001-BU
120VAC,
LED30HPS-600-SIW
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TC4001UBP
Abstract: tc4011bp applications TC4011UBP IC - TC4001BP
Text: C2MOS DIG IT A L IN T E G R A T E D CIRCUIT S ILIC O N M O N O L IT H IC TC4001UBP, TC4011UBP TC4001UBP QUAD 2 INPUT NOR GATE TC4011UBP QUAD 2 INPUT NAND GATE TC4001UBP and TC4011UBP are 2 input NOR gate and 2 input NAND gate respectively. The pin connections
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TC4001UBP,
TC4011UBP
TC4001UBP
TC4011UBP
TC4001BP
TC4011BP
TC4001UBP)
tc4011bp applications
IC - TC4001BP
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TC4069 OSCILLATOR
Abstract: Toshiba TC4069 TC4069 TC4069UB tc4069ubp DIP14-P-300-2 TC4069UBF TC4069UBFN TC4069UBFT TC4069ubp japan
Text: TO SH IBA TC4069UB P/UBF/U BFN/U BFT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4069UBP, TC4069UBF, TC4069UBFN, TC4069UBFT Note The JEDEC SOP (FN) is not available in Japan TC4069UB HEX INVERTER TC4069UB contains six circuits of inverters. Since the
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TC4069
TC4069UBP,
TC4069UBF,
TC4069UBFN,
TC4069UBFT
TC4069UB
TC4069 OSCILLATOR
Toshiba TC4069
tc4069ubp
DIP14-P-300-2
TC4069UBF
TC4069UBFN
TC4069UBFT
TC4069ubp japan
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