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    Gowin EVAL-pSRAM-GW1NR4 MBGA81

    Programmable Logic IC Development Tools
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    Mouser Electronics EVAL-pSRAM-GW1NR4 MBGA81
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    Panasonic Electronic Components ENW-49D01A1KF

    WiFi Modules - 802.11 PAN9520 WIFI RF Module 4MB Flash (Espressif Systems ESP32-S2)
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    TTI ENW-49D01A1KF Reel 500
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    Espressif Inc ESP-PSRAM64

    64Mbit, SRAM, 1.8V (Alt: ESP-PSRAM64)
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    EBV Elektronik ESP-PSRAM64 16 Weeks 1
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    Espressif Inc ESP-PSRAM64H

    64Mbit, SRAM, 3.3V (Alt: ESP-PSRAM64H)
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    EBV Elektronik ESP-PSRAM64H 16 Weeks 3,000
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    Espressif Inc ESP-PSRAM16H

    16 Mbit serial pseudo SRAM device, 3.3V (Alt: ESP-PSRAM16H)
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    EBV Elektronik ESP-PSRAM16H 16 Weeks 3,000
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    PSRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TC51WHM716AXBN70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8,388,608-WORD BY 16-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC51WHM716AXBN is a 134,217,728-bit pseudo static random access memory PSRAM organized as 8,388,608 words by 16 bits. Using Toshiba’s CMOS technology and advanced circuit techniques, it provides high


    Original     		PDF TC51WHM716AXBN70 608-WORD 16-BIT TC51WHM716AXBN 728-bit

    GPL162002

    Abstract: GPL162003 silicon7 PSRAM SV6P6418UFA 0.1uf ceramic capacitor 162003 CS26LV16163HC Pseudo SRAM CS26LV16163H
    Text: AN0032 GPL162002/GPL162003 with Pseudo SRAM Application Note DEC. 12, 2007 GPL162002/GPL162003 with Pseudo SRAM Application Note Generalplus has tested pass some PSRAM devices as listed: 1. FIDELIX FMP3217BA4 H60E 2. SILICON7 SV6P6418UFA 70P 3. CS26LV16163HCP70


    Original     		PDF AN0032 GPL162002/GPL162003 FMP3217BA4 SV6P6418UFA CS26LV16163HCP70 CS26LV16163HCP70, GPL162002/162003. GPL162002/162003 GPL162002 GPL162003 silicon7 PSRAM 0.1uf ceramic capacitor 162003 CS26LV16163HC Pseudo SRAM CS26LV16163H

    N16T1618A1AZ

    Abstract: N16T1618C2AZ N16T1618D1AZ 23183
    Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N16T1618C2 D1/A1 A Advance Information 16Mb Ultra-Low Power Asynchronous CMOS PSRAM 1M x 16 bit Overview Features The N16T1618C2(D1/A1)A is an integrated


    Original     		PDF N16T1618C2 N16T1618A1AZ N16T1618C2AZ N16T1618D1AZ 23183

    128W18

    Abstract: 28f128w18t Intel SCSP 28F128W18B 28F640W18T 128W-1 128W18B micron flash otp
    Text: 128-Mbit 1.8 Volt Intel Wireless Flash Memory W18 + 32-Mbit PSRAM Stacked-CSP Family Datasheet Product Features • ■ ■ ■ Flash Architecture — Flexible, Multiple-Partition, DualOperation: Read-While-Write / ReadWhile-Erase — 32 Partitions, 4 Mbits each


    Original     		PDF 128-Mbit 32-Mbit --32-Kword 128W18 RD48F3000W0YBQ0 RD48F3000W0YTQ0 128W18 32PSRAM RD38F3040W0YBQ0 RD38F3040W0YTQ0 28f128w18t Intel SCSP 28F128W18B 28F640W18T 128W-1 128W18B micron flash otp

    Untitled

    Abstract: No abstract text available
    Text: ESMT M24L48512DA Revision History Revision 1.0 19 Jul. 2007 - Original Elite Semiconductor Memory Technology Inc. Publication Date : Jul. 2007 Revision : 1.0 1/10 ESMT PSRAM M24L48512DA 4-Mbit (512K x 8) Pseudo Static RAM Features • • • • • •


    Original     		PDF M24L48512DA M24L48512DA I/O15)

    M69KB128AA

    Abstract: BCR10
    Text: M69KB128AA 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM PRELIMINARY DATA Features summary • SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ USER-SELECTABLE OPERATING MODES – Asynchronous Modes: Random Read, and


    Original     		PDF M69KB128AA 104MHz M69KB128AA BCR10

    CYK512K16SCCA

    Abstract: No abstract text available
    Text: CYK512K16SCCA MoBL 8-Mbit 512K x 16 Pseudo Static RAM Functional Description[1] Features • Advanced low power MoBL architecture The CYK512K16SCCA is a high-performance CMOS pseudo static RAM (PSRAM) organized as 512K words by 16 bits that supports an asynchronous memory interface. This device


    Original     		PDF CYK512K16SCCA CYK512K16SCCA I/O15) CYK512K16SCCAU

    CYK128K16SCCB

    Abstract: No abstract text available
    Text: CYK128K16SCCB 2-Mbit 128K x 16 Pseudo Static RAM Functional Description[1] Features • Advanced low power MoBL architecture The CYK128K16SCCB is a high-performance CMOS pseudo static RAMs (PSRAM) organized as 128K words by 16 bits that supports an asynchronous memory interface. This device


    Original     		PDF CYK128K16SCCB CYK128K16SCCB I/O15) CYK128K16SCCBU

    smartphone MOTHERBOARD CIRCUIT diagram

    Abstract: AP-DOC-070 Micron 512MB nand FLASH mcp J9 G3 MARKING G3 MICRON mcp QUALCOMM Reference manual A0-A21 DM270 Flash MCp nand DRAM 107-ball
    Text: DiskOnChip-Based MCP Including DiskOnChip G3 and PSRAM Data Sheet, July 2004 Highlights DiskOnChip-based MCP Multi-Chip Package is a complete memory solution. Efficiently packed in a small Fine-Pitch Ball Grid Array (FBGA) package, it is ideal for data and code


    Original     		PDF 02-DT-0704-00 smartphone MOTHERBOARD CIRCUIT diagram AP-DOC-070 Micron 512MB nand FLASH mcp J9 G3 MARKING G3 MICRON mcp QUALCOMM Reference manual A0-A21 DM270 Flash MCp nand DRAM 107-ball

    N32T1618C1B

    Abstract: No abstract text available
    Text: N32T1618C1B NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com Advance Information 32Mb Ultra-Low Power Asynchronous CMOS PSRAM 2M x 16 bit Overview Features The N32T1618C1B is an integrated memory


    Original     		PDF N32T1618C1B N32T1618C1B

    BCR10

    Abstract: M69KM096AA
    Text: M69KM096AA 64 Mbit 4 Mb x16 , 83MHz clock rate, 1.8V Supply, Multiplexed I/O, Bare Die, Burst PSRAM Preliminary Data Feature summary • Supply Voltage – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to VCC for I/O buffers ■ Multiplexed Address/Data bus


    Original     		PDF M69KM096AA 83MHz 32-Word) 83MHz BCR10 M69KM096AA

    DM270

    Abstract: 2Gb NAND FLASH Toshiba QUALCOMM Reference manual Diskonchip toshiba 107ball marking G3 smartphone MOTHERBOARD CIRCUIT diagram Micron 512MB nand FLASH mcp M-Systems diskonchip mcp toshiba MLC nand flash
    Text: DiskOnChip-Based MCP Including DiskOnChip G3 and PSRAM Data Sheet, July 2004 Highlights DiskOnChip-based MCP Multi-Chip Package is a complete memory solution. Efficiently packed in a small Fine-Pitch Ball Grid Array (FBGA) package, it is ideal for data and code


    Original     		PDF 02-DT-0704-00 DM270 2Gb NAND FLASH Toshiba QUALCOMM Reference manual Diskonchip toshiba 107ball marking G3 smartphone MOTHERBOARD CIRCUIT diagram Micron 512MB nand FLASH mcp M-Systems diskonchip mcp toshiba MLC nand flash

    4085B

    Abstract: No abstract text available
    Text: Burst PSRAM Part Numbering System FM B XX XX X X - X XX X X Fidelix Memory Product Family Temperature C : 0℃~70℃ S : -10℃~60℃ 70℃ E : -25℃~85℃ I : -40℃~85℃ B : Burst Pseudo SRAM Device Depth 08 : 8M 16 : 16M 32 : 32M 64 : 64M 12 : 128M Data Width


    Original     		PDF 66MHz 104MHz 133MHz 83MHz 110Mhz 4085B

    Untitled

    Abstract: No abstract text available
    Text: IS66WVE2M16BLL Advanced Information 3.0V Core Async/Page PSRAM Overview The IS66WVE2M16BLL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several


    Original     		PDF IS66WVE2M16BLL IS66WVE2M16BLL 32Mbit 70nsWVE2M16BLL-70TLI 48-ball 48-pin MO-207

    658512

    Abstract: 658512A HM658512ALFP-8 Hitachi DSA00164
    Text: HM658512A Series 4 M PSRAM 512-kword x 8-bit 2 k Refresh ADE-203-218C(Z) Rev. 3.0 Nov. 1997 Description The Hitac hi HM658512A is a C MOS pseudo static R AM orga nized 512-kw ord × 8-bit. It re alize s higher density, higher per forma nce and low powe r consumption by employing 0. 8 µm Hi-C MOS proc ess


    Original     		PDF HM658512A 512-kword ADE-203-218C 512-kw 525-mil 460-mil 600-mil D-85622 658512 658512A HM658512ALFP-8 Hitachi DSA00164

    14027

    Abstract: BV48A WCMC1616V9X WCMC1616V9X-FI70
    Text: ADVANCE INFORMATION WCMC1616V9X 1Mb x 16 Pseudo Static RAM Features • 1T Cell, PSRAM Architecture • High speed: 70 ns • Wide Voltage range: — VCC range: 2.7V to 3.3V • Low active power — Typical active current: 2 mA @ f = 1 MHz — Typical active current: 13 mA @ f = fMAX


    Original     		PDF WCMC1616V9X WCMC1616V9X 14027 BV48A WCMC1616V9X-FI70

    S30MS-P

    Abstract: AMB128 S29WS-P S75WS256PEFJF5 S75WS256PEFKFF S75WS-P UtRAM Density Spansion NAND Flash DIE MS512P
    Text: S75WS-P based MCP/POP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash NOR Interface S30MS-P (NAND Interface) ORNAND Flash pSRAM Type 2 S75WS-P based MCP/POP Products Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		PDF S75WS-P S30MS-P S30MS-P AMB128 S29WS-P S75WS256PEFJF5 S75WS256PEFKFF UtRAM Density Spansion NAND Flash DIE MS512P

    spansion solder profile

    Abstract: diode F4 3J S29GL016A S29GL-A S71GL016A SPANSION 16
    Text: S71GL016A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 16 Megabit (1M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory 4 Megabit (256K x 16-bit) pSRAM S71GL016A Based MCPs Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		PDF S71GL016A 16-bit) spansion solder profile diode F4 3J S29GL016A S29GL-A SPANSION 16

    S29WS256N

    Abstract: S71WS512NE0BFWZZ
    Text: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip


    Original     		PDF S71WS512NE0BFWZZ S71WS512 S29WS256N 54MHz 128Mb 96-ball S71WS512NE0BFWZZ S29WS256N

    555H

    Abstract: SST34HF3244
    Text: 32 Mbit Concurrent SuperFlash + 4/8 Mbit PSRAM ComboMemory SST34HF3244 / SST34HF3282 / SST34HF3284 SST34HF32x4x32Mb CSF + 4/8/16 Mb SRAM x16 MCP ComboMemory Data Sheet FEATURES: • Flash Organization: 2M x16 or 4M x8 • Dual-Bank Architecture for Concurrent


    Original     		PDF SST34HF3244 SST34HF3282 SST34HF3284 SST34HF32x4x32Mb SST34HF32x4: 24Mbit SST34HF3282: MO-210, 62-lfbga-LS-8x10-400mic-4 62-ball 555H

    M36L0T7050T2

    Abstract: M58LT128HB M58LT128HT M36L0t7050
    Text: M36L0T7050T2 M36L0T7050B2 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 32 Mbit (2 Mb x16) PSRAM, multichip package Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash Memory – 1 die of 32 Mbit (2 Mb x16) Pseudo SRAM


    Original     		PDF M36L0T7050T2 M36L0T7050B2 M36L0T7050T2: 88C4h M36L0T7050B2: 88C5h M36L0T7050T2 M58LT128HB M58LT128HT M36L0t7050

    555H

    Abstract: SST34HF1641J SST34HF1681J 1681J
    Text: 16 Mbit Concurrent SuperFlash + 4/8 Mbit PSRAM ComboMemory SST34HF1641J / SST34HF1681J SST34HF168116Mb CSF x8/x16 + 2/4/8 Mb SRAM (x16) MCP ComboMemory Data Sheet FEATURES: • Flash Organization: 1M x16 or 2M x8 • Dual-Bank Architecture for Concurrent


    Original     		PDF SST34HF1641J SST34HF1681J SST34HF168116Mb x8/x16) 62-lfbga-LS-8x10-400mic-4 62-Ball S71252 S71336-01-000 555H SST34HF1681J 1681J

    TC518512

    Abstract: No abstract text available
    Text: INTEGRATED TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC518512 AF / AFT - 70V TC518512 AF / AFT - 80V TC518512 AF / AFT - 1 0V DATA SILICON GATE CMOS 524,288-WORD BY 8-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC518512AF/AFT is a 4,194,304-bit CMOS pseudo static random access memory PSRAM organized as


    OCR Scan     		PDF TC518512 288-WORD TC518512AF/AFT 304-bit TC518512AF-Vâ

    TC518129CFWL-80

    Abstract: 2SA1015
    Text: TOSHIBA TC518129CPL/CFWL/CFTL-70V,-80V,-1 OV TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC518129CPIVCFL/CFWL/CFTL is a 1,048,578-bit CMOS pseudo static random access memory PSRAM


    OCR Scan     		PDF TC518129CPL/CFWL/CFTL-70V 072-WORD TC518129CPIVCFL/CFWL/CFTL 578-bit TC518128C DIP32-P-600-2 TC518129CPL-70V TC518129CPL-80V TC518129CPL-10V TC518129CFWL-80 2SA1015