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    U1N60 Search Results

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    U1N60 Price and Stock

    Vishay Siliconix IRFU1N60APBF

    MOSFET N-CH 600V 1.4A TO251AA
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    DigiKey IRFU1N60APBF Tube 862 1
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    RS IRFU1N60APBF Bulk 10
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    Bristol Electronics IRFU1N60APBF 11,996
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    IRFU1N60APBF 611
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    Alpha & Omega Semiconductor AOU1N60

    MOSFET N-CH 600V 1.3A TO251-3
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    Vishay Siliconix IRFU1N60A

    MOSFET N-CH 600V 1.4A TO251AA
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    DigiKey IRFU1N60A Tube 3,000
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    onsemi FQU1N60TU

    MOSFET N-CH 600V 1A IPAK
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    DigiKey FQU1N60TU Tube 5,040
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    Rochester Electronics LLC FQU1N60TU

    MOSFET N-CH 600V 1A IPAK
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    DigiKey FQU1N60TU Tube 607
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    U1N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    U1N60

    Abstract: No abstract text available
    Text: WFD/U1N60 Wisdom Semiconductor N-Channel MOSFET Features RDS on (Max 12.0 Ω )@VGS=10V • Gate Charge (Typical 4.5nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) ■ ■ ■ 2. Drain { Symbol


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    PDF WFD/U1N60 30TYP U1N60

    U1N60

    Abstract: No abstract text available
    Text: SSR/U1N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS on = 12 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 0.9 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 25 µA (Max.) @ VDS = 600V


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    PDF SSR/U1N60A U1N60

    SSR -100 DD

    Abstract: No abstract text available
    Text: SSR/U1N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS on = 12 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 0.9 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 25 µA (Max.) @ VDS = 600V


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    PDF SSR/U1N60A SSR -100 DD

    IRFU1N60A

    Abstract: No abstract text available
    Text: SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l Power Factor Correction l Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and


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    PDF 5518A IRFR1N60APbF IRFU1N60APbF IRFR1N60A IRFU1N60A 08-Mar-07 IRFU1N60A

    all transistor IRF 310

    Abstract: transistor irf 645 irf mosfet 12A 600V MOSFET IRF 940 MOSFET IRF 635 MOSFET IRF 380 TRANSISTOR MOSFET IRF all transistor IRF 312 IRF 730 TRANSISTOR MOSFET IRF VDs 600v
    Text: SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l Power Factor Correction l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and


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    PDF IRFR1N60APbF IRFU1N60APbF AN-994. all transistor IRF 310 transistor irf 645 irf mosfet 12A 600V MOSFET IRF 940 MOSFET IRF 635 MOSFET IRF 380 TRANSISTOR MOSFET IRF all transistor IRF 312 IRF 730 TRANSISTOR MOSFET IRF VDs 600v

    U1N60

    Abstract: as58
    Text: U1N60 T O- 25 1 600V N-Channel Enhancement Mode MOSFET FEATURES TO -2 5 1 • 1A, 600V, RDS ON =11Ω@VGS=10V, ID=0.5A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS


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    PDF PJU1N60 2002/95/EC O-220AB O-251 MIL-STD-750 U1N60 O-251 80PCS/TUBE 2010-REV U1N60 as58

    MAR 641 TRANSISTOR

    Abstract: IRFU1N60A AN-994 EIA-541 IRFR120 IRFR1N60A IRFU120 power mosfet 600v 4.5v to 100v input regulator
    Text: SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l Power Factor Correction l Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and


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    PDF 5518A IRFR1N60APbF IRFU1N60APbF IRFR1N60A IRFU1N60A 12-Mar-07 MAR 641 TRANSISTOR IRFU1N60A AN-994 EIA-541 IRFR120 IRFR1N60A IRFU120 power mosfet 600v 4.5v to 100v input regulator

    IRFU1N60A

    Abstract: IRFR1N60A IRFU120 AN-994 EIA-541 IRFR120
    Text: SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l Power Factor Correction l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and


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    PDF 5518A IRFR1N60APbF IRFU1N60APbF IRFR1N60A IRFU1N60A AN-994. IRFU1N60A IRFR1N60A IRFU120 AN-994 EIA-541 IRFR120

    IRFU1N60A

    Abstract: EIA-541 IRFR120 IRFR1N60A IRFU120 4.5v to 100v input regulator
    Text: PD - 91846B SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l Power Factor Correction Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and


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    PDF 91846B IRFR1N60A IRFU1N60A AN-994. IRFU1N60A EIA-541 IRFR120 IRFR1N60A IRFU120 4.5v to 100v input regulator

    MAR 641 TRANSISTOR

    Abstract: IRFU1N60A
    Text: PD - 91846B SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l Power Factor Correction Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and


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    PDF 91846B IRFR1N60A IRFU1N60A 08-Mar-07 MAR 641 TRANSISTOR IRFU1N60A

    MAR 641 TRANSISTOR

    Abstract: IRFU1N60A EIA-541 IRFR120 IRFR1N60A IRFU120 A127 transistor
    Text: PD - 91846B SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l Power Factor Correction Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and


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    PDF 91846B IRFR1N60A IRFU1N60A 12-Mar-07 MAR 641 TRANSISTOR IRFU1N60A EIA-541 IRFR120 IRFR1N60A IRFU120 A127 transistor

    MOSFET SSR

    Abstract: U1N60
    Text: SSR/U1N60A P o w e r MOSFET FEATURES BV D SS • R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ^ D S o n = ■ E xtended S afe O pe ra ting A rea ■ Lo w e r Leakage C urrent : 25 |a.A (M ax.) @ V DS = 600V


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    PDF SSR/U1N60A MOSFET SSR U1N60

    Untitled

    Abstract: No abstract text available
    Text: SSR/U1N60A Advanced Power MOSFET FEATURES BVdss = 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 mA Max @ VDS = 600V


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    PDF SSR/U1N60A 1N60A

    Untitled

    Abstract: No abstract text available
    Text: Advanced SSR/U1N60A Power MOSFET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 600V B Low Rds(0n) ■ 9-390 £1 (Typ.)


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    PDF SSR/U1N60A

    SSR -100 DD

    Abstract: MOSFET IRF VDs 600v SSR -25 DD POWER MOSFET Rise Time irf power mosfet
    Text: SSR/U1N60A Advanced Power MOSFET FEATURES BV dss = 600 V • Avalanche Rugged Technology ■ ^DS on = Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 600V


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    PDF SSR/U1N60A SSR -100 DD MOSFET IRF VDs 600v SSR -25 DD POWER MOSFET Rise Time irf power mosfet

    EZ-34

    Abstract: IRFM120A U2N60
    Text: Device List D2 / I 2 IRFW/IZ14A IRFW/IZ24A IRFW/EZ34A IRFW/IZ44A IRFW/I510A ERFW/I520A IRFW/I530A FRFW/I540A IRFWfl550A IRFW/I610A IRFW/I620A IRFW/I630A IRFW/I640A IRFW/I614A IRFW/I624A IRFW/I634A IRFW/I644A IRFW/I710A IRFW/I720A IRFW/I730A IRFW/I740A SSW/I1N50A


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    PDF IRFW/IZ14A IRFW/IZ24A IRFW/EZ34A IRFW/IZ44A IRFW/I510A ERFW/I520A IRFW/I530A FRFW/I540A IRFWfl550A IRFW/I610A EZ-34 IRFM120A U2N60

    u1n60

    Abstract: 1N55
    Text: SSR1N60/1N55 U1N60/1N55 N-CHANNEL POWER MOSFET FEATURES • • • • • • • D-PACK Lower R d s ON Excellent voltage stability Fast switching time Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


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    PDF SSR1N60/1N55 SSU1N60/1N55 SSR1N60/U1N60 SSR1N56/U1N55 SSR1N55/U1N55 u1n60 1N55

    U1N60

    Abstract: SSR1N60 250M
    Text: N-CHANNEL POWER MOSFETS SSR1N60/55 U1N60/55 FEATURES D-PAK • Lower R d s <o n • • • • • • Excellent voltage stability Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


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    PDF SSR1N60/55 SSU1N60/55 SSR1N60/U1N60 SSR1N55/U1N55 71bmia 0028MSM U1N60 SSR1N60 250M