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    2SC4630LS

    Abstract: 2SC4631LS 2SC4632LS 2SC4633LS 2SC4634LS 2SC4635LS 2SC4636LS 2SC4637LS 2SC4710LS T0-126ML
    Text: SAflYO T r a n s i s t o r s f o r V e r y H i g h - D e f in i t i o n C R T D i s p l a y H o r i z o n t a l D e f l e c t i o n O u t p u t U s e 3 afci D y n a m i cs F ' o c s t j i s U s e ( N o p i c t u r e e v e r o u t of f o c u s w i t h b e t t e r f o c u s c h a r a c t e r i s t i c s )


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    PDF T0-220FI T0-220. diffus-126 T0-126LP T0-220CI T0-220ML SC-67, OT-186) O-220FIÂ SC-67KS0T-189} 2SC4630LS 2SC4631LS 2SC4632LS 2SC4633LS 2SC4634LS 2SC4635LS 2SC4636LS 2SC4637LS 2SC4710LS T0-126ML

    IRF 850 mosfet

    Abstract: Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382
    Text: Medium Output Power MOSFETs l N ew P a d o - g e : T S S O P 8 *0ne size sm aller than S0P8. Best su ited fo r higher performance and effic ie n c y of battery-pow ered equipment and av ailab le fo r h igh-density surface mount. S O P S ^Reduced surface mount area by 502 and thickness by 30Z over the SC-63(TP).package.


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    PDF SC-63 T0-126LP T0-220CI T0-220ML SC-67, OT-186) O-220FIÂ SC-67KS0T-189} T0-220MF lsDwATT220> IRF 850 mosfet Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382

    TSS0P8

    Abstract: PMWD15UN PMWD16UN PMWD18UN PMWD19UN PMWD26UN PMWD30UN SC75 SC89 20031
    Text: |iTrenchMOS «IfJSfflElfrilf1? Tssopsitf^ffijpg^gMosFETs f f i ^ ? I J f f l M T S S O P 8 t i s g l ^ 2 0 V ' 3 0 V F *3 ^ !lM O S F E T » fi|IJiTW|iTrenchMOSjlnnn^^JSi#M JPM s • Semiconductors M ffi^ ^ ^ T re n c h M O S ^ 'IM ’ 5pJfflfJ*ff«J > & /M is g * a ij!g


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    PDF 20VfrJ30Vft itS08 /Jn45% PMWD26UN PMWD16UN PMWD15UN PMWD30UN PMWD19UN PMWD18UN PMWD32UN TSS0P8 SC75 SC89 20031

    varistor sem ad 222 m

    Abstract: varistor 222 ste Surgector varistor Z 500 ps
    Text: Overvoltage Suppression Facts V oltage T ra n s ie n ts can be d e fin e d as sho rt du ra tio n e xcu rsio n s o r surges of e le ctrica l energy. T ra n s ie n ts re sult fro m th e s ud den re le ase of pre vio u sly s to re d energy. In te rm s of e le ctrica l o r e le c tro n ic circuits, this


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    PDF SC70-6 varistor sem ad 222 m varistor 222 ste Surgector varistor Z 500 ps

    Untitled

    Abstract: No abstract text available
    Text: M95040 M95020, M95010 4K/2K/1K Serial SPI EEPROM with High Speed Clock and Positive Clock Strobe PRELIMINARY DATA 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE - 4.5V to 5.5V for M950x0 - 2.5V to 5.5V for M950x0-W - 1,8V to 3.6V for M950x0-R


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    PDF M95040 M95020, M95010 M950x0 M950x0-W M950x0-R 150mil M95040,

    Untitled

    Abstract: No abstract text available
    Text: M93C86, M93C76, M93C66 M93C56, M93C46, M93C06 16 K/8 K/4 K/2 K/1 K/256 x8/x16 Serial Microwire Bus EEPROM • INDUSTRY STANDARD MICROWIRE BUS ■ 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ DUAL ORGANIZATION: by WORD (x16) or by BYTE (x8)


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    PDF M93C86, M93C76, M93C66 M93C56, M93C46, M93C06 K/256 x8/x16) 150mil M93Cx6

    M24C16

    Abstract: No abstract text available
    Text: SGS-THOMSON . llIlMJilLIlMWDÊi M24C16, M24C08 M24C04, M24C02, M24C01 16K/8K/4K/2K/1K SERIAL l2C BUS EEPROM PRODUCT PREVIEW TWO WIRE l2C SERIAL INTERFACE SUPPORTS 400kHz PROTOCOL 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION 2ms TYPICAL PROGRAMMING TIME


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    PDF M24C16, M24C08 M24C04, M24C02, M24C01 16K/8K/4K/2K/1K 400kHz M24Cxx M24Cxx-W M24Cxx-R M24C16

    sanyo transistor tt series

    Abstract: TO225 LEAD FORMING TRANSISTORS SANYO sanyo transistor SSFP package 2SB1269 2SB1449 2SB1450 2SC5264 2SC5420
    Text: Power Transistor Surface Mount Package S M P Surface Mount Power In r e c e n t y e a r s s u r f a c e m ount s e m ic o n d u c to r p ro d u c ts have found wide a p p li c a t io n from s m a ll - s i g n a l consum er equipm ent to h ig h -p o w e r i n d u s t r i a l e q u ip m e n t.


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    PDF becom-126 T0-126LP T0-220CI T0-220ML SC-67, OT-186) O-220FIÂ SC-67KS0T-189} T0-220MF lsDwATT220> sanyo transistor tt series TO225 LEAD FORMING TRANSISTORS SANYO sanyo transistor SSFP package 2SB1269 2SB1449 2SB1450 2SC5264 2SC5420

    k669 transistor

    Abstract: k544 K932 transistor mosfet k544 k427 transistor k583 k427 K932 k222 mosfet k546
    Text: SAfÊYO Small-signal Junction FETs/MOSFETs F e a tu re s Case O u tlin e s unit.'m m SANYO:SMCP 1 : S ource, 2 : Drá i n, 3 : Ga te * V e r y low n o is e f ig u r e * L arge |Y f s | * Low g a te le a k c u r r e n t * S m a ll-s iz e d package p e r m ittin g FET-used s e t s to be made s m a lle r


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    PDF 250mm Ratings/Ta-25 2SK2170UA) 2SK1069 2SK1332CV) 2SK209KH) 2SK2219CD) T0-126LP T0-220CI T0-220ML k669 transistor k544 K932 transistor mosfet k544 k427 transistor k583 k427 K932 k222 mosfet k546

    C4106 transistor

    Abstract: C4106 transistor c3457 B824 transistor c4106 semiconductor transistor c3447 transistor c4106 transistor d1061 D1060 d1061
    Text: SA\YO T0-220MF Mini Fin Power Transistor Series Features Sanyo power tra n sisto r case o utline T0-220MF (Mini Fin) is a sm all-sized package suited for mounting on electronic equipment th at is lim ited in height. When mounted on the board, the height above the board is approximately 10mm lower


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    PDF T0-220MF O-220 Ratings/Ta-25 T0-220) 2SB1267 2SD1903 D1235 2SB1268 2SD1904 C4106 transistor C4106 transistor c3457 B824 transistor c4106 semiconductor transistor c3447 transistor c4106 transistor d1061 D1060 d1061

    N and P MOSFET

    Abstract: No abstract text available
    Text: # GF2918 Dual N-Channel Enhancement-Mode MOSFET V d s 30V R d S ON 18m£2 I d 7.8A Mechanical Data Features Case: SO-8 molded plastic body • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance Terminals: Leads solderable per MIL-STD-750,


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    PDF GF2918 MIL-STD-750, N and P MOSFET

    SPD221P

    Abstract: SPD221R sanyo transistor SGD102 SGD102T SPD121 MCP6 Marking sanyo SPD121P SPD122P SPD221
    Text: S A f/ Y O GaAs Di odes 1 j f c GaAs Schot tky Bar-r-ier Di odes Packaged Type The Sanyo SPD Series are packaged type GaAs Schottky barrier diodes designed for converters, modulators,detectors that can be operated in the X band (8.2 to 12.4GHz) and KU band (12.4 to 18.0GHz).


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    PDF SGD102, SGD102T) Ratings-126 T0-126LP T0-220CI T0-220ML SC-67, OT-186) O-220FIÂ SC-67KS0T-189} SPD221P SPD221R sanyo transistor SGD102 SGD102T SPD121 MCP6 Marking sanyo SPD121P SPD122P SPD221

    2SK2437

    Abstract: CPH3304 mosfet marking kf 78m marking 2SK2442 48M marking
    Text: Medium Output Power M0SFETs 2 LD S r~ i e s (L owD rive)VDS S :1 2V — 200V(F.C.P:F 1 a t SAfÈYO Channe 1 P i-o c e s s) SANYO has realized low-threshold voltage by optimum design of impurity concentration of Si or Si surface by adopting the F.C. P. process


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    PDF MT980624TR 2SK2437 CPH3304 mosfet marking kf 78m marking 2SK2442 48M marking

    M34W

    Abstract: No abstract text available
    Text: /= T S G S -T H O M S O N M34W02 2Kbit Serial EEPROM with Software Data Protection PRELIMINARY DATA TWO WIRE l2C SERIAL INTERFACE SUPPORTS 400kHz PROTOCOL 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for M34W02


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    PDF M34W02 400kHz M34W02 M34W02-W M34W02-R 150mil 169mil M34W

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON M34C02 llllMJilLliMWIiei 2K SERIAL EEPROM for DIMM SERIAL PRESENCE DETECT PRELIMINARY DATA TW O WIRE l2C SERIAL INTERFACE, SUPPORTS 400kHz PROTOCOL 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for M34C02


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    PDF M34C02 400kHz M34C02-W M34C02-R M34C02

    Untitled

    Abstract: No abstract text available
    Text: M34C02 2 Kbit Serial EEPROM for DIMM Serial Presence Detect • TWO WIRE l2C SERIAL INTERFACE, SUPPORTS 400kHz PROTOCOL ■ 1 MILLION ERASE/WRITE CYCLES ■ 40 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for M34C02 - 2.5V to 5.5V for M34C02-W


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    PDF M34C02 400kHz M34C02-W M34C02-R 150mil 169mil

    Untitled

    Abstract: No abstract text available
    Text: SAtfYO P o w e r S c h o t t k y B a r r i e r D i o d e s For L a r g e - S i g n a l Use Sanyo Schottky barrier diodes (SBD) have been developed by our original technology. They are available for making sets smaller in size and lighter in veight. Sanyo power SBDs with breakdown voltages of 50V, 90V and 180V can be applied to various uses.


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    PDF T0-220AB, SC-45 T0-220AA) T0-220FIÃ LSXSC-67^ OT-189 weight-Og186, T0-220MF SC-65, O-218)

    NPN Transistor 600V SC-62

    Abstract: 2SK2632 2SK1413 SANYO BIPOLAR transistor pcp SANYO SC-62 2SK1924 2SK2623 2SK1412LS 2SK1461 2SK1923
    Text: Large-signal Power M0SFETs 5 The Sanyo J-MOS series u tiliz e s Sanyo’s own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for v irtu a lly any types of power electronic equipment, the UH Series, AP Series and


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    PDF form-126 T0-126LP T0-220CI T0-220ML SC-67, OT-186) O-220FIÂ SC-67KS0T-189} T0-220MF lsDwATT220> NPN Transistor 600V SC-62 2SK2632 2SK1413 SANYO BIPOLAR transistor pcp SANYO SC-62 2SK1924 2SK2623 2SK1412LS 2SK1461 2SK1923

    2SC3253

    Abstract: 2SB1267 2SB1467 2SB903 2SB919 2SD1212 2SD1235 2SD1903 2SD2218 SC74
    Text: Low-Saturation Voltage Series T0~220, M F ,ML Package A p p ] i c a t i o n s * Relay d r i v e r s . * High-speed in v e rte rs . * C onverters. * H igh-current F e a t u r e s * Low V C E ( s a t ) . * H i g h l y r e s i s t a n t t o b r e a k d o w n b e c a u s e o f w i d e ASO. * F a s t


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    PDF TQ-220, 2SB1267 2SD1903 T0-220MF 2SB919 2SD1235 T0-220 2SB903 2SD1212 2SB1467 2SC3253 2SD1212 2SD2218 SC74

    2SA1829

    Abstract: 2SC3790 p7060 2SC5291 T0-126ML 2SA1371 2SC4732 e1aj SANYO CP5 transistor 2sc3788
    Text: Transistors for TV Display Video Output Use F e a t u r e s » E x c e lle n t HF c h a r a c t e r i s t i c . * Small re v e rse t r a n s f e r c ap a c ita n c e . * Complementary PNP and NPN types. ♦ Adoption o f MBIT, FBET p ro c e sse s. * H ighly r e s i s t a n t to d i e l e c t r i c breakdown.


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    PDF 2SC2857 oin50 2SA1689/2SC4449 2SC5291 T0-126LP T0-220CI T0-220ML SC-67, OT-186) O-220FIÂ 2SA1829 2SC3790 p7060 T0-126ML 2SA1371 2SC4732 e1aj SANYO CP5 transistor 2sc3788

    2SD1213

    Abstract: e1aj 2SB1511 2SB827 2SB828 2SB829 2SB904 2SD1063 2SD1064 2SD1065
    Text: sa H y o Low-Saturation Voltage Series T0-3PB,ML Package A p p l F e a t u r e s * Low V C E( sa t ) . ♦ H i g h l y r e s i s t a n t to breakdown be c a use o f wide ASO. ♦ F a s t s w i t c h i n g speed. i c a t i o n s * R elay d r iv e r s . ♦ H ig h -sp e e d i n v e r t e r s .


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    PDF 2SB904 2SD1213 2SB1511 2SD2285 0V/60V 2SB827 2SD-126 T0-126LP T0-220CI T0-220ML e1aj 2SB828 2SB829 2SD1063 2SD1064 2SD1065

    24C02 wp st

    Abstract: 24C04M M24C16
    Text: 7 SGS -THOMSON M24ci 6, M24C08 » KfflDMILKÊTMDfèi M24C04, M24C02, M24C01 16K/8K/4K/2K/1K SERIAL l2C BUS EEPROM PRELIMINARY DATA • TW O WIRE l2C SERIAL INTERFACE SUPPORTS 400kHz PROTOCOL ■ 1 MILLION ERASE/WRrTE CYCLES ■ 40 YEARS DATA RETENTION ■ 2ms TYPICAL PROGRAMMING TIME


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    PDF M24ci 24C08 24C04, 24C02, 16K/8K/4K/2K/1K 400kHz M24Cxx M24Cxx-W M24Cxx-R M24C16/C08/C04/C02/C01 24C02 wp st 24C04M M24C16

    m9661

    Abstract: M9625 M96320-R ufdfpn8 M96256-R M96M01 M9505 m9612 M96160-W M9632
    Text: SPI ÍÍÍE E P R O M £ $ Storage Generic Part Number Cepaclty Automotive Serial Interface Orad» Spec KB) M96M01-R 1000 Supply Vottag« (Voc) 8upply Voltage (Voc) Clook Frequency (fS C l) M in (V) M ex(V) Max (MHz) SPI - 1.8 5.5 5 Paokege SO 08 WIDE.208 (EIAJ); S08: WLCSP-R5


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    PDF M96M01-R M95M01-W 5512-OR M05512-R M96612-W M95256 M96256-R M96266-W M96128 M96128-R m9661 M9625 M96320-R ufdfpn8 M96M01 M9505 m9612 M96160-W M9632

    2sc4105

    Abstract: 2SC4427 2SC4106 2SC4107 2SC4160 2SC4161 2SC4162 2SC4163 2SC4164 2SC4219
    Text: SWITC H I N G POWER TRANSISTOR SERIES Na2 F e a t u r e s ♦ S h o r t s w i t c h i n g time ♦ High breakdown voltage ♦ Wide ASO ♦ H i g h r e l i a b i l i t y b e c a u s e of p l a n a r ¿ate H i g h — S p e e d 'I'ype U s e * Swit c h i n g regulators


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    PDF 2SC4219 2SC4220 T0-220 2SC4105 2SC4106 2SC4107 2SC4164 T0-220 2SC4160 2SC4161 2SC4427 2SC4162 2SC4163