Untitled
Abstract: No abstract text available
Text: ESMT M24L416256SA Revision History Revision 1.0 04 Jul. 2007 -Original Revision 1.1 (10 Sep. 2007) - Modify Vcc (max) =3.3V to 3.6V Revision 1.2 (27 Feb. 2008) - Add 44-pin TSOPII package - Add Avoid timing Revision 1.3 (24 Mar. 2008) - Add I-grade for TSOPII package
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44-pin
M24L416256SA
70-ns
M24L416256SA
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HY5117400A
Abstract: HY514100A HYM536810AM HYM536810AMG
Text: HYM536810A M-Series 8Mx36-bit CMOS DRAM MODULE DESCRIPTION The HYM536810A is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOPII and eight HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22§Þ decoupling are mounted for each DRAM. The
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HYM536810A
8Mx36-bit
36-bit
HY5117400A
HY514100A
HYM536810AM/ASLM/ATM/ASLTM
HYM536810AMG/ALMG/ATMG/ALTMG
1CE13-10-DEC94
HYM536810AM
HYM536810AMG
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HYM536410AMG
Abstract: hym536410am HY5117400A HY514100A
Text: HYM536410A M-Series 4Mx36-bit CMOS DRAM MODULE DESCRIPTION The HYM536410A is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII and four HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22§ Þdecoupling are mounted for each DRAM. The HYM536410AM / ASLM / ATM /
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HYM536410A
4Mx36-bit
36-bit
HY5117400A
HY514100A
HYM536410AM
HYM536410AMG
1CE11-10-DEC94
HY5117400A
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Untitled
Abstract: No abstract text available
Text: HM62W16255HI Series Ordering Information Type No. Access time Package HM62W16255HJPI-15 15 ns 400-mil 44-pin plastic SOJ CP-44D HM62W16255HTTI-15 15 ns 400-mil 44-pin plastic TSOPII (TTP-44DE) Pin Arrangement HM62W16255HJPI Series A0 A1 A2 A3 A4 CS I/O1
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HM62W16255HI
HM62W16255HJPI-15
HM62W16255HTTI-15
400-mil
44-pin
CP-44D)
TTP-44DE)
HM62W16255HJPI
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Untitled
Abstract: No abstract text available
Text: SRAM PRELIMINARY AS5LC2M8 2M x 8 HIGH-SPEED CMOS STATIC RAM PIN CONFIGURATIONS 44-pin TSOPII DGC & DGCR FEATURES • High-speed access time: 10, 15 & 20ns • Available in Mil-Temp, Enhanced & Industrial Ranges • High-performance, low-power CMOS process
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44-pin
-40oC
105oC
-55oC
125oC
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Untitled
Abstract: No abstract text available
Text: HM6216255HI Series Ordering Information Type No. Access time Package HM6216255HJPI-12 HM6216255HJPI-15 12 ns 15 ns 400-mil 44-pin plastic SOJ CP-44D HM6216255HTTI-12 HM6216255HTTI-15 12 ns 15 ns 400-mil 44-pin plastic TSOPII (TTP-44DE) Pin Arrangement HM6216255HTTI Series
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HM6216255HI
HM6216255HJPI-12
HM6216255HJPI-15
HM6216255HTTI-12
HM6216255HTTI-15
400-mil
44-pin
CP-44D)
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Untitled
Abstract: No abstract text available
Text: MOSEL VITELIC V436664S24VBTG-75PC 3.3 VOLT 64M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SDRAM MODULE PRELIMINARY Features Description • 168 Pin Unbuffered 67,108,864 x 64 bit Oganization SDRAM Modules ■ Utilizes High Performance 32M x 8 SDRAM in TSOPII-54 Packages
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V436664S24VBTG-75PC
PC133
TSOPII-54
V436664S
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pc133 sdram 512mb ECC unbuffered
Abstract: V437464Q24V V437464Q24VXTG-10PC V437464Q24VXTG-75 V437464Q24VXTG-75PC
Text: MOSEL VITELIC V437464Q24V 3.3 VOLT 64M x 72 HIGH PERFORMANCE UNBUFFERED ECC SDRAM MODULE PRELIMINARY Features Description • 168 Pin Unbuffered ECC 67,108,864 x 72 bit Oganization SDRAM Modules ■ Utilizes High Performance 64M x 4 SDRAM in TSOPII-54 Packages
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V437464Q24V
TSOPII-54
V437464Q24V
64this
pc133 sdram 512mb ECC unbuffered
V437464Q24VXTG-10PC
V437464Q24VXTG-75
V437464Q24VXTG-75PC
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V436516R04VXTG-10PCL
Abstract: V436516R04VXTG-75L V436516R04VXTG-75PCL
Text: MOSEL VITELIC V436516R04V L 3.3 VOLT 16M x 64 LOW PROFILE UNBUFFERED SDRAM MODULE PRELIMINARY Features Description • 168 Pin Unbuffered16,777,216 x 64 bit Oganization SDRAM DIMM ■ Utilizes High Performance 128 Mbit, 8M x 16 SDRAM in TSOPII-54 Packages
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V436516R04V
Unbuffered16
TSOPII-54
m52-3775
V436516R04VXTG-10PCL
V436516R04VXTG-75L
V436516R04VXTG-75PCL
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V436632S04VTG-10PC
Abstract: No abstract text available
Text: PRELIMINARY V436632S04VTG-10PC 3.3 VOLT 32M x 64 HIGH PERFORMANCE PC100 UNBUFFERED SDRAM MODULE MOSEL VITELIC Features Description • 168 Pin Unbuffered 33,554,432 x 64 bit Oganization SDRAM Modules ■ Utilizes High Performance 32M x 8 SDRAM in TSOPII-54 Packages
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V436632S04VTG-10PC
PC100
TSOPII-54
V436632S04VTG-10PC
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Untitled
Abstract: No abstract text available
Text: ESMT M13S128168A Operation temperature condition -40°C~85°C Revision History Revision 1.0 03 Jan. 2007 - Original Revision 1.1 (19 Mar. 2008) - Add BGA package - Modify the waveform of Power up & Initialization Sequence - Modify the θ value of TSOPII package dimension
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M13S128168A
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PC200
Abstract: No abstract text available
Text: V826416S04SATG 2.5 VOLT 16M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE MOSEL VITELIC PRELIMINARY Features Description • 184 Pin Unbuffered 16,777,216 x 64 bit Organization SDRAM Modules ■ Utilizes High Performance 16M x 8 SDRAM in TSOPII-66 Packages
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V826416S04SATG
TSOPII-66
V826416S04SATG
PC200
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Untitled
Abstract: No abstract text available
Text: MOSEL VITELIC V827464K24S 64M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE PRELIMINARY Features Description • 184 Pin Unbuffered 67,108,864 x 72 bit Organization DDR SDRAM Modules ■ Utilizes High Performance 32M x 8 DDR SDRAM in TSOPII-66 Packages
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V827464K24S
TSOPII-66
DDR400
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY V436664S04VTG-10PC 3.3 VOLT 64M x 64 HIGH PERFORMANCE PC100 UNBUFFERED SDRAM MODULE MOSEL VITELIC Features Description • 168 Pin Unbuffered 67,108,864 x 64 bit Oganization SDRAM Modules ■ Utilizes High Performance 32M x 8 SDRAM in TSOPII-54 Packages
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V436664S04VTG-10PC
PC100
TSOPII-54
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sdram pcb layout gerber
Abstract: V437464E24V V437464E24VXTG-10PC V437464E24VXTG-75 V437464E24VXTG-75PC
Text: MOSEL VITELIC V437464E24V 3.3 VOLT 64M x 72 HIGH PERFORMANCE REGISTERED SDRAM ECC MODULE PRELIMINARY Features Description • 168 Pin Registered ECC 67,108,864 x 72 bit Oganization SDRAM Modules ■ Utilizes High Performance 32M x 8 SDRAM in TSOPII-54 Packages
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V437464E24V
TSOPII-54
V437464E24V
sdram pcb layout gerber
V437464E24VXTG-10PC
V437464E24VXTG-75
V437464E24VXTG-75PC
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TSOPII 44
Abstract: TSOP-II 44
Text: TSOp p '4 00~ °-80 Unit • TSOPII 44-P-400-0.80 44 Unit : mm 23 À 0.5±0.1
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44-P-400-0
805TYP
TSOPII 44
TSOP-II 44
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HY5118160
Abstract: No abstract text available
Text: •HYUNDAI H Y M 536123 X-Series 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536123 is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of two HY5118160 in 42/42 pin SOJ or 44/50 pin TSOPII and one HY514403B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit
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36-bit
HYM536123
HY5118160
HY514403B
HYM536123X/TX/SLX
HYM536123XG/TXG/SLXG/SLTXG
DQ0-DQ35)
1DC03-10-FEB95
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Untitled
Abstract: No abstract text available
Text: ‘ HYUNDAI HYM536410A M-Series 4M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM53641OA is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII and four HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board.
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HYM536410A
36-bit
HYM53641OA
HY5117400A
HY514100A
HYM53641OAM/ALM/ATM/ALTM
HYM53641OAMG/ALMG/ATMG/ALTMG
13W72
HYM536410A/AL
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5B33
Abstract: MJ002 HYM536410 HY5117400A HYM53641OAMG
Text: -HYUNDAI HYM536410A M-Series 4M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM53641OA is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII and four HY5141 OOAin 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board.
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HYM536410A
36-bit
HYM53641OA
HY5117400A
HY5141
HYM53641OAM/ALM/ATM/ALTM
HYM536410AMG/ALMG/ATMG/ALTMG
72WIH
020f5
5B33
MJ002
HYM536410
HYM53641OAMG
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UG-95
Abstract: No abstract text available
Text: “H Y U N D A I HYM5V36123A X-Sgnqs , U n U M I 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM5V36123A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of two HY51V18160B in 42/42 pin SOJ or 44/50 pin TSOPII and one HY51V4403B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy
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HYM5V36123A
36-bit
HY51V18160B
HY51V4403B
22jiF
HYM5V36123ATX/ASLTX
HYM5V36123ATXG/ASLTXG
DQ0-DQ35)
UG-95
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Untitled
Abstract: No abstract text available
Text: “HYUNDAI U HYM5V36223A X-S ries 2M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM5V36223A is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of four HY51V18160B in 42/42 pin SOJ or 42/50 pin TSOPII and two HY51V4403B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy
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HYM5V36223A
36-bit
HY51V18160B
HY51V4403B
22\iF
HYM5V36223ATX/ASLTX
HYM5V36223ATXG/ASLTXG
DQ0-DQ35)
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Untitled
Abstract: No abstract text available
Text: ’«YUHDAt * H Y M 5 3 6 8 1 0 A M - S e r ie s 8Mx36-blt CMOS DRAM MODULE DESCRIPTION The HYM536810A is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOPII and eight HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin
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OCR Scan
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PDF
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8Mx36-blt
HYM536810A
36-bit
HY5117400A
HY514100A
HYM53681OAM/ASLM/ATM/ASLTM
HYM53681OAMG/ALMG/ATMG/ALTMG
1CE13-10-DEC94
HYM536810AM
HYM53681
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HY5118160
Abstract: No abstract text available
Text: HYUNDAI HYM536223 X-Series 2M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536223 is a 2M x 36-bit Fast page m ode CMOS DRAM m odule consisting o f fo u r HY5118160 in 42/42 pin SOJ o r 42/50 pin TSOPII and tw o HY514403B in 24/26 pin SOJ o r TSOPII on a 72 pin glass-epoxy printed circuit
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OCR Scan
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HYM536223
36-bit
HY5118160
HY514403B
HYM536223X/TX/SLX/SLTX
HYM536223XG/TXG/SLXG/SLTXG
HYM5J62ZJ/SI.
1DD0210-FEB95
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HYM536410AMG
Abstract: No abstract text available
Text: “H Y U N D A I H Y M 5 3 6 4 1 0 A M - S e r ie s 4Mx36-blt CMOS DRAM MODULE DESCRIPTION The HYM536410A is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII and four HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy
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OCR Scan
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4Mx36-blt
HYM536410A
36-bit
HY5117400A
HY514100A
HYM536410AM
HYM536410AMG
70WIJJ-í
p3G10
Pi/I53641
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