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    HY51V16160BJC

    Abstract: No abstract text available
    Text: HY51V18160B,HY51V16160B 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    Original     		PDF HY51V18160B HY51V16160B 1Mx16, 16-bit 1Mx16 HY51V16160BJC

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI H Y M 5 V 7 2 A 1 2 0 A 1M X X - S e r ie s 72-bit CMOS DRAM MODULE DESCRIPTION The HYM5V72A120A is a 1M x 72-bit Fast page mode CMOS DRAM module consisting of two HY51V4400B in 20/26 pin SOJ or TSOP-II, four HY51V18160B 42/42 pin SOJ or 44/50 pin TSOP-li and two 16-bit BiCMOS line driver


    OCR Scan     		PDF 72-bit HYM5V72A120A HY51V4400B HY51V18160B 16-bit HYM5V72A120AXG/ASLXG/ATXG/ASLTXG 1EC07-10-AUG95

    Untitled

    Abstract: No abstract text available
    Text: “HYUNDAI U HYM5V36223A X-S ries 2M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM5V36223A is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of four HY51V18160B in 42/42 pin SOJ or 42/50 pin TSOPII and two HY51V4403B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy


    OCR Scan     		PDF HYM5V36223A 36-bit HY51V18160B HY51V4403B 22\iF HYM5V36223ATX/ASLTX HYM5V36223ATXG/ASLTXG DQ0-DQ35)

    1OC05

    Abstract: No abstract text available
    Text: H Y U N D A I H Y M 5 V 3 2 1 2 0 A IM I 32-bit CMOS X -S e r íe s DRAM MODULE DESCRIPTION The HYM5V32120A is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of two HY51V18160B in 44/50 pin TSOPII on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor


    OCR Scan     		PDF 32-bit HYM5V32120A HY51V18160B 22fiF HYM5V32120ATXG/ASLTXG DQ0-DQ31) 1DC05-10-AUG95 HYM5V32120A/ASL 1OC05

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 51V 18160B S eries 1M x 16-bit CM OS DRAM with 2CAS DESCRIPTION The HY51V18160B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V18160B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques


    OCR Scan     		PDF 18160B 16-bit HY51V18160B 16-bit. 4b75Qfl8 1AD56-10-MAY9S HY51V18160BJC

    Untitled

    Abstract: No abstract text available
    Text: - H Y U N D A I * HY51V18160B,HY51 V I6160B 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    OCR Scan     		PDF HY51V18160B I6160B 1Mx16, 16-bit DQO-OQ15)

    UG-95

    Abstract: No abstract text available
    Text: “H Y U N D A I HYM5V36123A X-Sgnqs , U n U M I 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM5V36123A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of two HY51V18160B in 42/42 pin SOJ or 44/50 pin TSOPII and one HY51V4403B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy


    OCR Scan     		PDF HYM5V36123A 36-bit HY51V18160B HY51V4403B 22jiF HYM5V36123ATX/ASLTX HYM5V36123ATXG/ASLTXG DQ0-DQ35) UG-95

    Untitled

    Abstract: No abstract text available
    Text: ••HYUNDAI HYM5V32220A X-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION Die HYM5V32220A is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of four HY51V18160B in 44/50 pin TSOPII on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board 0.22nF decoupling capacitor


    OCR Scan     		PDF HYM5V32220A 32-bit HY51V18160B HYM5V32220ATXGASLTXG DQ0-DQ31) 1DD04-10-AUG95

    Untitled

    Abstract: No abstract text available
    Text: “ H Y U N D A I H Y M 5 V 6 4 2 2 0 A X - S e r ie s 2M x 64-bit CMOS DRAM MODULE DESCRIPTION The HYM5V64220A is a 2M x 64-bit Fast page mode CMOS DRAM module consisting of eight HY51V18160B in 42/42 pin SOJ, 44/50pin TSOP and two 16-bit BiCMOS line driver in TSSOP on a 168 pin giass-epoxy printed circuit


    OCR Scan     		PDF 64-bit HYM5V64220A HY51V18160B 44/50pin 16-bit 22fxF HYM5V64220AXG/ASLXG/ATXG/ASLTXG CASO-CA57 DQ0-DQ63)

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HYM5V64120A X-Series 2M X 64-bit CMOS DRAM MODULE DESCRIPTION Ttie HYM5V64120A is a 1M x 64-bit Fast page mode CMOS DRAM module consisting of four HY51V18160B in 42/42 pin SOJ or 44/50pin TSOP-II and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed


    OCR Scan     		PDF HYM5V64120A 64-bit HY51V18160B 44/50pin 16-bit HYM5V64120AXG/ASLXG/ATXG/ASL DQ0-DQ63) 1EC05-10-AUG95

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HY51V18160B,HY51 V 16160B 1Mx16, Fast Page mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    OCR Scan     		PDF HY51V18160B 16160B 1Mx16, 16-bit 1Mx16

    Untitled

    Abstract: No abstract text available
    Text: •'HYUNDAI HY51V18160B, HY51V16160B _ 1M x 16bit CMOS DRAM DESCRIPTION ORDERING INFORMATION This fa m ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CM O S DRAMs. Fast Page m ode offers high speed random access o f m em ory cells within the


    OCR Scan     		PDF HY51V18160B, HY51V16160B 16bit HY51V18160BJC HY51V18160BSLJC HY51V18160BTC HY51V18160BSLTC Y51V16160BJC HY51V16160BSLJC HY51V16160BTC

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HYM5V72A220A X-Series 1M X 7 2-b it CMOS DRAM MODULE DESCRIPTION The HYM5V72A220A is a 1M x 72-bit Fast page mode CMOS DRAM module consisting of four HY51V4400B in 20/26 pin TSOP-II, eight HY51V18160B 44/50pin TSOP-II and four 16-bit BiCMOS line driver in TSSOPon a 168 pin


    OCR Scan     		PDF HYM5V72A220A 72-bit HY51V4400B HY51V18160B 44/50pin 16-bit 22jiF HYM5V72A220ATXG/ASLTXG RAS0-RA53)

    tlo7

    Abstract: IWR31
    Text: HY51V18160B Series •HYUNDAI 1Mx 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY51V18160B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V18160B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques


    OCR Scan     		PDF HY51V18160B 16-bit 16-bit. 1AD56-10-MAY95 HY51V18160BJC HY51V18160BSLJC tlo7 IWR31

    HYM5V64414

    Abstract: No abstract text available
    Text: As of ’96.3Q TYPE SIZE 8 -Byte 8M B DESCRIPTION. 1M x 64 EDO.SL D IM M PART HO. HYM5V64104AR/ATR SPEED REF. 60/70/80 4K H Y 51 V I6164BJ/BT x 4 IK HY51V18164BJ/BT x 4 IK HY51V18164BJ/BT x 4 HYM5V64124AR/ATR 1M x 72 Unbuffered EDO,SL,ECC HYM5V72A124AR/ATR


    OCR Scan     		PDF HYM5V64104AR/ATR HYM5V64124AR/ATR HYM5V72A124AR/ATR HYM5V64204AR/ATR HYM5V64214AF/ATF HYM5V64224AR/ATR I6164BJ/BT HY51V18164BJ/BT HY51V4404BJ/BT HYM5V64414

    AUO-PL321.60

    Abstract: HY51V18164B HY514264 HY514260
    Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP


    OCR Scan     		PDF HY531000AS HY531000ALS HY531000AJ HY531000ALJ HY534256AS HY534256ALS HY534256AJ HY534256ALJ HY512260JC HY512260LJC AUO-PL321.60 HY51V18164B HY514264 HY514260

    HY5118164B

    Abstract: hy5118160b HY5118160 HY51V65400TC HY5117804B
    Text: DRAM PRODUCT 16Mbit As of '96.3Q DESCRIPTION PART NO. 4M x 4 EDO,2< Ref. 3.3V PACKAGE OPTION ACCESS TIME ns OPERATING CURRENT (mA.MAX) STANDBY CURRENT (mA,MAX) TTL CMOS AVAILABILITY HY51V17404A SO JJSO P I (300mil) 60/70/80 120/100/90 l 0.5 NOW HY51V17404B


    OCR Scan     		PDF 16Mbit HY51V17404A HY51V17404B 300mil) 400mil) HY5118164B hy5118160b HY5118160 HY51V65400TC HY5117804B

    HY51V18164

    Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
    Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC


    OCR Scan     		PDF 256Kx4) 256x8) 128Kx16) HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY51V18164 HY5118164 HY514260 HY51V65400 HY51V17804CJ

    HY514260

    Abstract: HY5118160 HY5116160 HY5117404 HY51V65400 HY511616
    Text: •'HYUNDAI — • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUIC REFERENCE DRAM Part Numbering Ordering Information 3. DRAM DATA SHEETS 1M-bit DRAM Page HY531000A. 1M x1-bit, 5V, F P .


    OCR Scan     		PDF HY531000A. HY534256A. 256Kx4-bit, HY512260. 128KX16-bit, HY514260 HY5118160 HY5116160 HY5117404 HY51V65400 HY511616

    d 100 d

    Abstract: Y514100A HYM532220
    Text: QUICK REFERENCE D R A M M O D U L E Q U IC K R E F E R E N C E 3.3V DIMM TYPE S IZ E 8-B yte 8MB D E S C R IP T IO N 1M X 64 P A R T NO. EDO, SL HYM5V64104AX/ATX FPM, SL HYM5V64100AN/ATN SPEED 60/70/80 1K HY51V18164BJ/BT X 4 D, 1.00" 1K HY51V4400BJ/BT D, 1.00"


    OCR Scan     		PDF HYM5V64104AX/ATX HYM5V64124AX/ATX HYM5V64100AN/ATN HYM5V64100AX/ATX HYM5V64120AX/ATX HYMSV72103AN/ATN HYM5V72A100ATN HYM5V72A120ATX HY51V16164B HY51V18164BJ/BT d 100 d Y514100A HYM532220

    Untitled

    Abstract: No abstract text available
    Text: • H jjjH DRAM MODULE 5V SIMM TYPE SIZE 72 Pin 32MB As of '96.3Q DESCRIPTION. 8M X 32 SIM M 8M X 36 K PART NO. SPEED REF. DEVICE USED EDO.SL H Y M 532814A M /A T M 6 0 /7 0 /8 0 2K HY5117404AJ/AT x 16 FPM.SL H Y M 532810A M /A T M 5 0 /6 0 /7 0 2K HY5117400AJ/AT x 16


    OCR Scan     		PDF 32814A 32810A 536A804AM HYM536A814AM 36810A HY5117404AJ/AT HY5117400AJ/AT HY5116404AJ HY5117404AJ