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    TSM2312 Search Results

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    TSM2312 Price and Stock

    Taiwan Semiconductor TSM2312CX-RFG

    MOSFET N-CHANNEL 20V 4.9A SOT23
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    DigiKey TSM2312CX-RFG Digi-Reel 152,875 1
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    TSM2312CX-RFG Cut Tape 152,875 1
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    TSM2312CX-RFG Reel 150,000 3,000
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    Taiwan Semiconductor TSM2312CX RFG

    Transistor MOSFET N-CH 20V 4.9A 3-Pin SOT-23 T/R - Tape and Reel (Alt: TSM2312CX RFG)
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    Avnet Americas TSM2312CX RFG Reel 30 Weeks 45,000
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    Mouser Electronics TSM2312CX RFG
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    TME TSM2312CX RFG 1
    • 1 $0.739
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    EBV Elektronik TSM2312CX RFG 18 Weeks 3,000
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    TSC Electronics Ltd TSM2312CX RFG

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    Bristol Electronics TSM2312CX RFG 2,397
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    TSC Electronics Ltd TSM2312CXRF

    20V N-CHANNEL MOSFET Small Signal Field-Effect Transistor, 4.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA TSM2312CXRF 9,000
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    TSM2312 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TSM2312 Taiwan Semiconductor 20v N-channel Enhancement Mode Mosfet Original PDF
    TSM2312CX Taiwan Semiconductor 20V N-Channel Enhancement Mode MOSFET Original PDF
    TSM2312CX RFG Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 20V 4.9A SOT23 Original PDF

    TSM2312 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TSM2312 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY RDS on (mΩ) VDS (V) Pin Definition: 1. Gate 2. Source 3. Drain 20 Features ID (A) 33 @ VGS = 4.5V 4.9 40 @ VGS = 2.5V 4.4 51 @ VGS = 1.8V 3.9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		TSM2312 OT-23 TSM2312CX PDF

    TSM2312

    Abstract: TSM2312CX
    Text: TSM2312 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 20 Features ID (A) 33 @ VGS = 4.5V 4.9 40 @ VGS = 2.5V 4.4 51 @ VGS = 1.8V 3.9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		TSM2312 OT-23 TSM2312CX TSM2312 PDF

    TSM2312CX

    Abstract: TSM2312
    Text: TSM2312 20V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 20V RDS on , Vgs @ 4.5V, Ids @ 5.0A = 33mΩ RDS (on), Vgs @ 2.5V, Ids @ 4.0A = 40mΩ Features Advanced trench process technology Excellent thermal and electrical capabilities


    Original     		TSM2312 OT-23 TSM2312CX OT-23 300uS, TSM2312CX TSM2312 PDF

    Untitled

    Abstract: No abstract text available
    Text: TAIW AN TSM2312 s SEMICONDUCTOR fpbj RoHS V -X 20V N-Channei MOSFET CO M PLIANCE PRODUCT SUMMARY SO T-23 P in D e fin itio n : V ds V 1. Gate 2. Source 3. Drain 20 1 2 F ea tu res A dvance Trench Proce s s T ech n o logy • High D ensity Cell Design fo r U ltra Low O n-resistance


    OCR Scan     		TSM2312 PDF

    DIODE FS 607

    Abstract: marking j9 sot-23 sot-23 package marking J9 TSM2312CX TSM2312 1Q1 SOT 6u sot-23
    Text: s TAIWAN pb RoHS TSM2312 S E M IC O N D U C T O R 20V N-Channei MOSFET CO M PLIANCE PRODUCT SUMMARY SOT-23 3 P in D e fin itio n : V ds (V) 1. Gate 2. Source 3. Drain 20 1 2 Features RDS(on)(mÛ) Id (A) 33 @ Vgs= 4 .5V 4.9 4Û @ Vos = 2.5V 4.4 51 @ V g »= 1.8V


    OCR Scan     		TSM2312 OT-23 TSM2312CX OT-23 DIODE FS 607 marking j9 sot-23 sot-23 package marking J9 TSM2312 1Q1 SOT 6u sot-23 PDF