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    TSAL62 Search Results

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    TSAL62 Price and Stock

    Vishay Semiconductors TSAL6200

    EMITTER IR 940NM 100MA RADIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TSAL6200 Bulk 7,227 1
    • 1 $0.57
    • 10 $0.334
    • 100 $0.57
    • 1000 $0.15461
    • 10000 $0.12558
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    Vishay Intertechnologies TSAL6200

    IR EMITTER HIGH POWR 950NM 5MM 17DEG-e3 - Bulk (Alt: TSAL6200)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TSAL6200 Bulk 2,200 12 Weeks 4,000
    • 1 -
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    • 10000 $0.11004
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    TSAL6200 Bulk 16 Weeks, 3 Days 1
    • 1 $0.546
    • 10 $0.349
    • 100 $0.188
    • 1000 $0.188
    • 10000 $0.188
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    Mouser Electronics TSAL6200 41,498
    • 1 $0.59
    • 10 $0.341
    • 100 $0.188
    • 1000 $0.159
    • 10000 $0.126
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    Arrow Electronics TSAL6200 2 12 Weeks 1
    • 1 $0.5298
    • 10 $0.3123
    • 100 $0.1768
    • 1000 $0.1768
    • 10000 $0.1768
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    Newark TSAL6200 Bulk 48 1
    • 1 $0.566
    • 10 $0.35
    • 100 $0.21
    • 1000 $0.21
    • 10000 $0.21
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    Bristol Electronics TSAL6200 110
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    Quest Components TSAL6200 3,000
    • 1 $0.525
    • 10 $0.525
    • 100 $0.525
    • 1000 $0.21
    • 10000 $0.21
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    TSAL6200 2,431
    • 1 $0.825
    • 10 $0.825
    • 100 $0.825
    • 1000 $0.2475
    • 10000 $0.165
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    TSAL6200 241
    • 1 $0.2475
    • 10 $0.2475
    • 100 $0.165
    • 1000 $0.165
    • 10000 $0.165
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    TTI TSAL6200 Bulk 68,000 1,000
    • 1 -
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    • 100 -
    • 1000 $0.118
    • 10000 $0.114
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    TME TSAL6200 1
    • 1 $0.503
    • 10 $0.222
    • 100 $0.15
    • 1000 $0.112
    • 10000 $0.09
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    ComSIT USA TSAL6200 10,359
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    Avnet Asia TSAL6200 14 Weeks 4,000
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    EBV Elektronik TSAL6200 13 Weeks 4,000
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    Vishay Intertechnologies TSAL6200-ASZ

    Infrared Emitters - High Power IR EMITTER HIGH POWR 950NM 5MM 17DEG-e3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TSAL6200-ASZ
    • 1 $0.54
    • 10 $0.337
    • 100 $0.194
    • 1000 $0.152
    • 10000 $0.118
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    EBV Elektronik TSAL6200-ASZ 13 Weeks 1,000
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    Vishay Intertechnologies TSAL6200-ESZ

    Infrared Emitters - High Power IR EMITTER HIGH POWR 950NM 5MM 17DEG-e3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TSAL6200-ESZ
    • 1 $0.58
    • 10 $0.357
    • 100 $0.206
    • 1000 $0.161
    • 10000 $0.125
    		Get Quote

    Vishay Intertechnologies TSAL6200-ES21

    Infrared Emitter 940nm 72mW/sr Circular Top Mount 2-Pin T-1 3/4 T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical TSAL6200-ES21 10,000 5,000
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    • 10000 $0.0992
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    Arrow Electronics TSAL6200-ES21 11,000 12 Weeks 5,000
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    • 10000 $0.0982
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    Newark TSAL6200-ES21 Bulk 5,000
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    TME TSAL6200-ES21 2,004 2
    • 1 -
    • 10 $0.219
    • 100 $0.117
    • 1000 $0.082
    • 10000 $0.082
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    EBV Elektronik TSAL6200-ES21 13 Weeks 1,000
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    Find more TSAL62 price and stock on Findchips.com

    TSAL62 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TSAL6200 Vishay LED, INFRARED, GAAS, T-1 3/4 (TSAL6200) Original PDF
    TSAL6200 Vishay Intertechnology GaAs/GaAlAs IR Emitting Diode in phi 5 mm (T - 1.75) Package Original PDF
    TSAL6200 Vishay Telefunken GaAs-GaAlAs IR Emitting Diode in Deg 5 mm (T-1 ) Package Original PDF

    TSAL62 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TSAL6200

    Abstract: No abstract text available
    Text: TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity


    Original     		PDF TSAL6200 2002/95/EC 2002/96/EC TSAL6200 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power


    Original     		PDF TSAL6200 2002/95/EC 2002/96/EC TSAL6200 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power


    Original     		PDF TSAL6200 2002/95/EC 2002/96/EC TSAL6200 11-Mar-11

    TSAL6200

    Abstract: No abstract text available
    Text: TSAL6200 Vishay Telefunken ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description 94 8389 TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs


    Original     		PDF TSAL6200 TSAL6200 D-74025 20-May-99

    Untitled

    Abstract: No abstract text available
    Text: TSAL6200 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.


    Original     		PDF TSAL6200 TSAL6200 D-74025 24-Jun-03

    TSAL6200

    Abstract: No abstract text available
    Text: TSAL6200 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.


    Original     		PDF TSAL6200 TSAL6200 D-74025 11-May-04

    21211

    Abstract: No abstract text available
    Text: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power


    Original     		PDF TSAL6200 2002/95/EC 2002/96/EC TSAL6200 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 21211

    TSAL6200

    Abstract: No abstract text available
    Text: TSAL6200 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs


    Original     		PDF TSAL6200 TSAL6200 D-74025 20-May-99

    Untitled

    Abstract: No abstract text available
    Text: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power


    Original     		PDF TSAL6200 2002/95/EC 2002/96/EC TSAL6200 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12

    TSAL6200

    Abstract: infrared emitters and detectors data book temic
    Text: TSAL6200 GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant


    Original     		PDF TSAL6200 TSAL6200 D-74025 04-Nov-97 infrared emitters and detectors data book temic

    Untitled

    Abstract: No abstract text available
    Text: TSAL6200 VISHAY Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.


    Original     		PDF TSAL6200 TSAL6200 08-Apr-05

    TSAL6200

    Abstract: No abstract text available
    Text: TSAL6200 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs


    Original     		PDF TSAL6200 TSAL6200 D-74025 20-May-99

    TSAL6200

    Abstract: No abstract text available
    Text: TSAL6200 VISHAY Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.


    Original     		PDF TSAL6200 TSAL6200 D-74025 01-Oct-04

    TSAL6200

    Abstract: tsal62 high power infrared led Infrared Emitting Diode
    Text: TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power


    Original     		PDF TSAL6200 2002/95/EC 2002/96/EC TSAL6200 18-Jul-08 tsal62 high power infrared led Infrared Emitting Diode

    Untitled

    Abstract: No abstract text available
    Text: TSAL6200 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs


    Original     		PDF TSAL6200 TSAL6200 D-74025 20-May-99

    Untitled

    Abstract: No abstract text available
    Text: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power


    Original     		PDF TSAL6200 TSAL6200 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    TSAL6200

    Abstract: No abstract text available
    Text: TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.


    Original     		PDF TSAL6200 TSAL6200 08-Apr-05

    TSAL6200

    Abstract: No abstract text available
    Text: TSAL6200 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.


    Original     		PDF TSAL6200 TSAL6200 D-74025 11-May-04

    Untitled

    Abstract: No abstract text available
    Text: TSAL6200 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.


    Original     		PDF TSAL6200 TSAL6200 D-74025 23-Jun-04

    TSAL6200

    Abstract: J-STD-051
    Text: TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity


    Original     		PDF TSAL6200 2002/95/EC 2002/96/EC TSAL6200 18-Jul-08 J-STD-051

    TSOP75538

    Abstract: 72hours 82495
    Text: New Product TSOP753., TSOP755. www.vishay.com Vishay Semiconductors IR Receiver Modules for Remote Control Systems FEATURES • • • • • • • Very low supply current Photo detector and preamplifier in one package Compatible also with short burst dataformats


    Original     		PDF TSOP753. TSOP755. 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TSOP75538 72hours 82495

    TSOP343

    Abstract: TSOP34338 TSOP32138
    Text: New Product TSOP321., TSOP323., TSOP325., TSOP341., TSOP343., TSOP345. www.vishay.com Vishay Semiconductors IR Receiver Modules for Remote Control Systems FEATURES • • • • • • • • 1 2 3 16672 Very low supply current Photo detector and preamplifier in one package


    Original     		PDF TSOP321. TSOP323. TSOP325. TSOP341. TSOP343. TSOP345. TSOP343 TSOP34338 TSOP32138

    diode chn 940

    Abstract: chn 940 CT-98
    Text: TSAL6200 Vishay Telefunken GaAs/GaAIAs IR Emitting Diode in 0 5 mm T-VA Package Description T S A L6200 is a high efficiency infrared em itting diode in G aAIAs on G aAs technology, m olded in clear, bluegrey tinted plastic packages. In com parison w ith the standard G aAs on G aAs


    OCR Scan     		PDF TSAL6200 L6200 D-74025 ct-98 diode chn 940 chn 940 CT-98

    TSAL6200

    Abstract: temic infrared
    Text: Temic Semiconductors TSAL6200 GaAs/GaAlAs IR Emitting Diode in 0 5 mm T-1% Package Description TSAL6200 is a high efficiency infrared emitting diode in GaAIAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technol­


    OCR Scan     		PDF TSAL6200 TSAL6200 D-74025 06-Mar-98 temic infrared