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    TRAS 250NS Search Results

    TRAS 250NS Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    MD27C64-25 Rochester Electronics LLC UVPROM, 8KX8, 250ns, CMOS, PACKAGE-28 Visit Rochester Electronics LLC Buy
    MD27C256-25/B Rochester Electronics LLC UVPROM, 32KX8, 250ns, CMOS, CQCC32, CERAMIC, JLCC-32 Visit Rochester Electronics LLC Buy
    PS543B25TRASR Texas Instruments 4-V to 18-V input, 25-A synchronous SWIFT™ step-down converter with thermally enhanced pack 17-WQFN-FCRLF -40 to 150 Visit Texas Instruments

    TRAS 250NS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tras 250ns

    Abstract: sdram controller XAPP132 baa0 vhdl code for sdram controller vhdl code for DCM
    Text: MCH_OPB Synchronous DRAM SDRAM Controller (v1.00a) DS492 April 4, 2005 Product Specification Introduction LogiCORE Facts The Xilinx Multi-CHannel-OPB(MCH_OPB) SDRAM controller provides a SDRAM controller that connects to the OPB bus and multiple channel interfaces, and provides the


    Original     		PDF DS492 tras 250ns sdram controller XAPP132 baa0 vhdl code for sdram controller vhdl code for DCM

    TAA 981

    Abstract: HY5118160 HY5118160JC
    Text: HY5118160 Series “HYUNDAI IM X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5118160 16-bit 16-bit. 1AD15-10-MAY94 HY5118160JC TAA 981

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 V 4 2 6 0 B •HYUNDAI S e r ie s 256KX 16-bit CMOS DRAM with 2 CAS PRELIMINARY DESCRIPTION The HY51V4260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CM OS process technology and advanced circuit design technique to achieve


    OCR Scan     		PDF 256KX 16-bit HY51V4260B 400mil 40pin 40/44pin 1AC26-00-MAY94 4b75Gflfl

    intel 2117

    Abstract: S6054 2117S
    Text: in t e i 2117 FAMILY 2117-2 2117-3 2117-4 Maximum Access Time ns 150 200 250 Read, Write Cycle (ns) 320 375 410 Read-Modlfy-Wrlte Cycle (ns) 330 375 475 N on-Latched Output is Three-State, T T L Com patible RAS Only Refresh 128 Refresh Cycles Required Every 2ms


    OCR Scan     		PDF 16-Pin 462mW 011-r intel 2117 S6054 2117S

    Untitled

    Abstract: No abstract text available
    Text: "HYUNDAI HYM532120A W-Series IM X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532120A is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of two HY5118160B in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for


    OCR Scan     		PDF HYM532120A 32-bit HY5118160B HYM532120AW/ASLW/ATW/ASLTW HYM532120AWG/ASLWG 4b750flfl 1CC03-10-DEC94

    hy51v18164b

    Abstract: No abstract text available
    Text: “H Y U N D A I HYM5V32224A X-Series 2M X 32-bit CMOS ORAM MODULE DESCRIPTION The HYM5V32224A is a 2M x 32-bit EDO mode CMOS DRAM module consisting of four HY51V18164B in 44/50 pin TSOPII on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0 22^F decoupling capacitor is


    OCR Scan     		PDF HYM5V32224A 32-bit HY51V18164B HYM5V32224ATXG/ASLTXG DQ0-DQ63) 1DD01-10-SEP95 Q394/-0

    hy5118164b

    Abstract: No abstract text available
    Text: “H Y U N D A I HY5118164B Series 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5118164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HV5118164B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5118164B 16-bit 16-bit. HV5118164B 12Cjj^ Q004fiBS 1AD58-10-MAY95

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 1 8 1 6 0 B • « H Y U N D A I S e r ie s 1Mx 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160B Is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF 16-bit HY5118160B 16-bit. HY5118160B 1ADS4-104IIAY9S HY5118160BJC HY5118160BSLJC HY5118160BTC

    Untitled

    Abstract: No abstract text available
    Text: “ H Y U N D A I H Y M 5 V 6 4 2 2 0 A X - S e r ie s 2M x 64-bit CMOS DRAM MODULE DESCRIPTION The HYM5V64220A is a 2M x 64-bit Fast page mode CMOS DRAM module consisting of eight HY51V18160B in 42/42 pin SOJ, 44/50pin TSOP and two 16-bit BiCMOS line driver in TSSOP on a 168 pin giass-epoxy printed circuit


    OCR Scan     		PDF 64-bit HYM5V64220A HY51V18160B 44/50pin 16-bit 22fxF HYM5V64220AXG/ASLXG/ATXG/ASLTXG CASO-CA57 DQ0-DQ63)

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HYM5V64120A X-Series 2M X 64-bit CMOS DRAM MODULE DESCRIPTION Ttie HYM5V64120A is a 1M x 64-bit Fast page mode CMOS DRAM module consisting of four HY51V18160B in 42/42 pin SOJ or 44/50pin TSOP-II and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed


    OCR Scan     		PDF HYM5V64120A 64-bit HY51V18160B 44/50pin 16-bit HYM5V64120AXG/ASLXG/ATXG/ASL DQ0-DQ63) 1EC05-10-AUG95

    HY5118160

    Abstract: No abstract text available
    Text: H Y 5 1 1 8 1 6 0 ‘H Y U N D A I S e r ie s 1Mx 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF 16-bit HY5118160 16-bit. HY5118160 1AD15-10-MAY94 4b75Dflfl 322fi HY5118160JC

    1OC05

    Abstract: No abstract text available
    Text: H Y U N D A I H Y M 5 V 3 2 1 2 0 A IM I 32-bit CMOS X -S e r íe s DRAM MODULE DESCRIPTION The HYM5V32120A is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of two HY51V18160B in 44/50 pin TSOPII on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor


    OCR Scan     		PDF 32-bit HYM5V32120A HY51V18160B 22fiF HYM5V32120ATXG/ASLTXG DQ0-DQ31) 1DC05-10-AUG95 HYM5V32120A/ASL 1OC05

    HY51V18164B

    Abstract: No abstract text available
    Text: H Y 51V 18164BSeries •HYUNDAI 1M X 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY51V18164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V18164B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques


    OCR Scan     		PDF 16-bit HY51V18164B 16-bit. 470C11 10X168} 4b750Ã 1AD60-10-MAY95

    HY51V181648

    Abstract: No abstract text available
    Text: ‘ HYUNDAI HYM5V64224A X-Series 2M x 64-bit CMOS ORAM MODULE DESCRIPTION The HYM5V64224A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of eight HY51V181648 in 42/42 pin SOJ and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit board. 0.22nF


    OCR Scan     		PDF HYM5V64224A 64-bit HY51V181648 16-bit HYM5V64224AXG/ASLXG/ATXG/ASLTXG 1ED01-10-AUG95 DQ0-DQ63)

    HYM532220SLTW

    Abstract: HYM532220 HY5118160
    Text: •HYUNDAI HYM532220 W-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220 is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of four HY5118160 in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted for each


    OCR Scan     		PDF HYM532220 32-bit HY5118160 HYM532220W/SLW/TW/SLTW HYM532220WG/SLWG 250t6 4b75Dflû 1CD07-10-DEC94 HYM532220SLTW

    HY5118160

    Abstract: HYM532120
    Text: •HYUNDAI H Y M 532120 X-Series 1M x 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532120 is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of two HY5118160 in 44/50 pin TSOPII on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted


    OCR Scan     		PDF 32-bit HYM532120 HY5118160 HYM532120TXG7SLTXG DQ0-DQ31) 1DC02-10-FEB95 HYM532120/SL

    hy5118160b

    Abstract: No abstract text available
    Text: •«YUNDAI HYM532120A W-Series 1M x 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532120A is a 1M x 32-bit Fast page mode CMOS DRAM m odule consisting of two HY5118160B in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted for


    OCR Scan     		PDF HYM532120A 32-bit HY5118160B HYM532120AW/ASLW/ATW/ASLTW HYM532120AWG/ASLWG SinHYM532120A HYM532120A/ASL YM532120AT/AS

    RAS 0610

    Abstract: ras - 0610 RAS- 0610 PA 0610 D5 HY51V18164 hy51v18164b
    Text: »HYUNDAI HYM5V72A124A R-Series Unbuffered 2M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V72A124A is a 2M x 72-bit EDO m ode CMOS DRAM m odule consisting of two HY51V4404B in 20/26 pin SOJ or TSOP-II, four HY51V18164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048bit EEPROM on a 168


    OCR Scan     		PDF HYM5V72A124A 72-bit HY51V4404B HY51V18164B 2048bit HYM5V72A124ARG/ASLRG/ATRG/ASLTRG DQ0-DQ71) 1EC06-10-APR95 RAS 0610 ras - 0610 RAS- 0610 PA 0610 D5 HY51V18164

    HY5118164B

    Abstract: HY5118164BJC60 HY5118164BJC V074 HY5118164BSLRC JD 16 CFt 450 HT
    Text: • • H Y U N D A I H Y 5 1 1 8 1 6 4 B S e r ie s 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5118164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118164B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF 16-bit HY5118164B 16-bit. Q1480C3 0JJ00 1AD58-10-MA HY5118164BJC HY5118164BJC60 V074 HY5118164BSLRC JD 16 CFt 450 HT

    HY51V18164B

    Abstract: No abstract text available
    Text: «HYUNDAI HY51V18164B Series 1M X 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY51V18164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V18164B utilizes Hyundai's CM O S silicon gate process technology as well as advanced circuit techniques


    OCR Scan     		PDF HY51V18164B 16-bit 16-bit. 04711-20Cf) 1AD60-10-MAY95 HY51V18164BJC

    odq1

    Abstract: HYM532120
    Text: -H Y U N D A I HYM532120 W-Series 1M X 32-bit CMOS DRAM MODULE DESCRIPTION T ie HYM532120 is a 1M x 32-bit Fast page mode CMOS DRAM m odule consisting of two HY5118160 in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted for each


    OCR Scan     		PDF HYM532120 32-bit HY5118160 HYM532120W/SLW/TW/SLTW HYM532120WG/SLWG HYM532120/SL HYM532120T/SLT odq1

    Untitled

    Abstract: No abstract text available
    Text: “H YU N D A I HYM536120A W-Series 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536120A is a 1M x 36-bit Fast page m ode CMOS DRAM m odule consisting of two HY5118160B in 42/42 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nFdecoupling


    OCR Scan     		PDF HYM536120A 36-bit HY5118160B HY531000A 22nFdecoupling HYM536120AW/ALW HYM536120AWG/ALWG DQ0-DQ35)

    A1HV

    Abstract: OQ11 SLTC
    Text: “H Y U N D A I 11 • M 11 W I I I H Y 5 1 1 8 2 6 0 J 5e r i e s 4 1 1 w n e us« n « A O o ä i i » .u w or* a o o M in o 1M X 16-bit CMOS nDRAM with 2CAS &WPB DESCRIPTION The HY5118260 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118260


    OCR Scan     		PDF 16-bit HY5118260 16-bit. 1A016-10-MAY94 GDD3543 HY5118260JC HY5118260SLJC A1HV OQ11 SLTC

    HY514260B

    Abstract: No abstract text available
    Text: H Y 5 1 4 2 6 0 B "HYUNDAI S e r ie s 2S6KX 16-bit CMOS DRAM with 2CAS PRELIMINARY DESCRIPTION The HY514260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access


    OCR Scan     		PDF 16-bit HY514260B 400mil 40pin 40/44pin 1AC25-00-MAY94 00027b4