Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR TO 41 PACKAGE Search Results

    TRANSISTOR TO 41 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    XPH13016MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH8R316MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -90 A, 0.0064 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH3R10AQM Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 120 A, 0.0031 Ω@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TO 41 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C67078-S1306-A3

    Abstract: 60f5
    Text: BUZ 41 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 41 A 500 V 4.5 A 1.5 Ω TO-220 AB C67078-S1306-A3 Maximum Ratings Parameter Symbol Continuous drain current


    Original
    PDF O-220 C67078-S1306-A3 C67078-S1306-A3 60f5

    BUZ41

    Abstract: C67078-S1306-A3
    Text: BUZ 41 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 41 A 500 V 4.5 A 1.5 Ω TO-220 AB C67078-S1306-A3 Maximum Ratings Parameter Symbol Continuous drain current


    Original
    PDF O-220 C67078-S1306-A3 BUZ41 C67078-S1306-A3

    IFN423

    Abstract: IFN421 IFN422 electrometers electrometer
    Text: Databook.fxp 1/14/99 12:22 PM Page B-41 B-41 01/99 IFN421, IFN422, IFN423 Dual N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Very High Input Impedance Differential Amplifiers ¥ Electrometers Device Dissipation Derate 3.2 mW/°C to 50°C


    Original
    PDF IFN421, IFN422, IFN423 IFN421 IFN422 IFN423 electrometers electrometer

    transistor tj 2499

    Abstract: C67078-S3121-A2 transistor K D 2499 BUZ345 transistor D 2499 0/transistor tj 2499
    Text: BUZ 345 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 345 100 V 41 A 0.045 Ω TO-218 AA C67078-S3121-A2 Maximum Ratings Parameter Symbol Continuous drain current


    Original
    PDF O-218 C67078-S3121-A2 transistor tj 2499 C67078-S3121-A2 transistor K D 2499 BUZ345 transistor D 2499 0/transistor tj 2499

    BUZ345

    Abstract: transistor tj 2499 C67078-S3121-A2 BUZ 82 transistor K D 2499 transistor D 2499
    Text: BUZ 345 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 345 100 V 41 A 0.045 Ω TO-218 AA C67078-S3121-A2 Maximum Ratings Parameter Symbol Continuous drain current


    Original
    PDF O-218 C67078-S3121-A2 BUZ345 transistor tj 2499 C67078-S3121-A2 BUZ 82 transistor K D 2499 transistor D 2499

    HOA0866-T55

    Abstract: HOA087X SDP8406 SEP8506 U.S. Sensor
    Text: Datasheet - HOA0866-T55 HOA0866-T55 HOA Series Infrared Transmissive Sensor, Transistor Output, Two Mounting Tabs, Plastic Package Features Representative photograph, actual product appearance may vary. ● ● ● ● ● Due to regional agency approval


    Original
    PDF HOA0866-T55 HOA086X/087X 20and 20Settings/rabab/Desktop/Datasheet 20HOA0866-T55 HOA0866-T55 HOA087X SDP8406 SEP8506 U.S. Sensor

    HOA0862-T55

    Abstract: INFRARED TRANSISTOR HOA087X SDP8406 SEP8506 hoa0862
    Text: Datasheet - HOA0862-T55 HOA0862-T55 HOA Series Infrared Transmissive Sensor, Transistor Output, Two Mounting Tabs, Plastic Package Features ● Representative photograph, actual product appearance may vary. ● ● ● ● Due to regional agency approval


    Original
    PDF HOA0862-T55 HOA086X/087X HOA0862-T55 INFRARED TRANSISTOR HOA087X SDP8406 SEP8506 hoa0862

    vjp44a

    Abstract: MO-16B-AB TA11B TF11B cu50 ad 153 transistor transistor bd 905 transistor BC 185 mkt 344 MS-026-bcd
    Text: Plastic Package Dimensional/Thermal Data The following table identifies all of the plastic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the plastic packages


    Original
    PDF MS011798 vjp44a MO-16B-AB TA11B TF11B cu50 ad 153 transistor transistor bd 905 transistor BC 185 mkt 344 MS-026-bcd

    sy 320 diode

    Abstract: No abstract text available
    Text: SIEMENS BUZ 41 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 41 A Vbs 500 V b ^DS on Package Ordering Code 4.5 A 1.5 Í2 TO-220 AB C67078-S1306-A3 Maximum Ratings Parameter Symbol Continuous drain current b Values


    OCR Scan
    PDF O-220 C67078-S1306-A3 tempe96 fl23Sb05 0GA41L sy 320 diode

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 41 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 41 A Vos 500 V fa 4.5 A Abs on 1 .5 ft Package Ordering Code TO-220 AB C67078-S1306-A3 Maximum Ratings Parameter Symbol Values Continuous drain current


    OCR Scan
    PDF O-220 C67078-S1306-A3 00-----------------------V

    Transistor BFr 99

    Abstract: Transistor BFR 96 TFC 718 S tfc 718 BFR34A Transistor BFR 38 TRANSISTOR 2SC 169 6620 bfr34 2N6620
    Text: ÍSIEû ESC D • fl235bDS QQQMb70 2 NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers ^ _ _ BFR34A 2 N 6620 SIEMENS AKTIEN6ESELLSCHAF BFR 34 A is an epitaxial NPN silicon planar RF transistor in a plastic package similar to TO 119 50 B 3 DIN 41 867 intended for use in RF amplifiers up to the GHz range,


    OCR Scan
    PDF fl235bDS 2N6620. Q62702-F346-S1 Q68000-A4668 fl23Sfc 0004fc BFR34A 200MHz Transistor BFr 99 Transistor BFR 96 TFC 718 S tfc 718 BFR34A Transistor BFR 38 TRANSISTOR 2SC 169 6620 bfr34 2N6620

    BD 130 NPN transistor

    Abstract: transistor BD 329 transistor BD Q62702-D401 BD329 JH transistor Q62702-D394 Q62902-B63 QQQ4347 BD330
    Text: 25C D • 623SbOS 000434b 4 « S I E G _ NPN Silicon Planar Transistor BD 329 -SIEMENS AKTIENGESELLSCHAF 25C 043^6 O-.7 ^ SI - 0 7 BO 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 330 it is particularly


    OCR Scan
    PDF 00043Mb Q62702-D394 329/BD Q62702-D401 Q62902-B63 100ps 200jiS BD329 BD 130 NPN transistor transistor BD 329 transistor BD Q62702-D401 BD329 JH transistor Q62702-D394 Q62902-B63 QQQ4347 BD330

    Bd 130 NPN transistor

    Abstract: 62702-D394 transistor z5
    Text: 2SC D • 623SbQS QQQM3Mb M « S I E G NPN Silicon Planar Transistor - 25C BD 329 CK346 0 — 7 r ? i~. ° 7 SIEMENS AKTIENGESELLSCHAF BO 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 330 it is particularly


    OCR Scan
    PDF 623SbQS CK346 329/BD 62702-D394 Q62702-D401 Q62902-B63 0QQ434fl -T-33 Bd 130 NPN transistor transistor z5

    transistor BD

    Abstract: TRANSISTOR bd 330
    Text: 2SC D • fl23SbDS QQQHBMI T M S I E G PNP Silicon Planar Transistor BD 330 _ 25C0 4 3 4 9 D T - 3 1 '/ ? SIEMENS AKTIENGESELLSCHAF BO 330 is an epitaxial PNP silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 329 it is particularly


    OCR Scan
    PDF fl23SbDS 330/BD Q62702-D395 Q62702-D401 Q62902-B63 235bQS GQ04351 BD330 transistor BD TRANSISTOR bd 330

    Transistor BFT 44

    Abstract: transistor tt 2078 TRANSISTOR 2SC 458 Transistor B C 458 transistor npn d 2078 B-01 BFT12 Q62702-F390 gp 823 Q0047
    Text: 1 - ’ asc D • ö23SbOS G004701 R « S I E G u‘ N PN Silicon RF Broadband Transistor BFT 12 SIEMENS AKTIENfiESELLSCHAF . D — 1 BFT 12 is an epitaxial N PN silicon planar RF transistor in a plastic package similar to TO 1 1 9 50 B 3 DIN 41 867 , intended for universal application in amplifiers up to the


    OCR Scan
    PDF 23SbOS Q004701 Q62702-F390 Transistor BFT 44 transistor tt 2078 TRANSISTOR 2SC 458 Transistor B C 458 transistor npn d 2078 B-01 BFT12 Q62702-F390 gp 823 Q0047

    transistor D 2499

    Abstract: transistor K D 2499 BUZ 82 BUZ345 transistor 2499
    Text: SIEMENS BUZ 345 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 345 Vbs 100 V b 41 A flfasion 0.045 n Package Ordering Code TO-218AA C67078-S3121-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values


    OCR Scan
    PDF O-218AA C67078-S3121-A2 O-218AA transistor D 2499 transistor K D 2499 BUZ 82 BUZ345 transistor 2499

    BFS20R

    Abstract: IC mark A09 BFS 65 Q62702-F350 Q62702-F589 a10 transistor
    Text: 2sc D m aaastas oooMb^s ? « s i e g r NPN Silicon RF Transistor BFS 20 BFS 20 R SIEMENS A K T I E N 6E SE LL SCH AF BFS 20 is an epitaxial NPN silicon planar RF transistor in TO 236 plastic package 23 A 3 DIN 41 869 , intended for use in film circuits. The transistor BFS 20 is marked "NA". It is also available upon request with changed


    OCR Scan
    PDF a23Sb05 Q62702-F350 Q62702-F589 BFS20R IC mark A09 BFS 65 Q62702-F350 Q62702-F589 a10 transistor

    Germanium power

    Abstract: pnp germanium transistor AF379
    Text: aSC D • 023SbD5 0QQ4QÔS 5 ■ S I E û T- PNP Germanium RF Transistor Of AF 379 - SIEMENS AKTIENGESELLSCHAF -fo r large sig n a l a p p lic a tio n s up to 9 0 0 M H z A F 379 is a PNP germanium planar RF transistor in 5 0 B 3 DIN 41 867 plastic package


    OCR Scan
    PDF 023SbD5 2701-F72 TartlbS45 voltage11 Germanium power pnp germanium transistor AF379

    transistor K D 2499

    Abstract: transistor D 2499 S/transistor K D 2499 BUZ 82 transistor 2499 BUZ345
    Text: SIEMENS SIPMOS Power Transistor BUZ 345 • N channel • Enhancement mode • Avalanche-rated Type Vos BUZ 345 100 V 41 A ^DS on Package 1> O rdering Code 0.045 £J TO-218 AA C67078-S3121-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 28 'C


    OCR Scan
    PDF O-218 C67078-S3121-A2 transistor K D 2499 transistor D 2499 S/transistor K D 2499 BUZ 82 transistor 2499 BUZ345

    2073 transistor

    Abstract: BFS20 siemens
    Text: 2sc D m aaastas oooMb^s ? « s i e g r NPN Silicon RF Transistor BFS 20 BFS 20 R SIEMENS A K T I EN 6 ES EL LSC HA F B F S 2 0 is an epitaxial N P N silicon planar R F transistor in TO 2 3 6 plastic package 2 3 A 3 D IN 41 869 , intended for use in film circuits.


    OCR Scan
    PDF

    transistor K D 2499

    Abstract: No abstract text available
    Text: BUZ 345 I nf ineon technologies SIPMOS Power Transistor • N channel £ • Enhancement mode • Avalanche-rated VPT05I56 3 Pin 2 Pin 1 G Type BUZ 345 Vbs b 100 V 41 A f iDS on 0.045 n Pin 3 S D Package Ordering Code TO-218 AA C67078-S3121-A2 Maximum Ratings


    OCR Scan
    PDF VPT05I56 O-218 C67078-S3121-A2 S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T transistor K D 2499

    A1306A

    Abstract: buz41
    Text: SIEMENS SIPMOS Power MOS Transistor VDS /D ^ D S o n • BUZ 41A = 500 V = 4.5 A = 1-5 Q N channel • E nhancem ent mode • A valanche-proof • Package: TO -220 A B 1) Type Ordering code BUZ 41 A C 6 7078-A 1306-A 3 Maximum Ratings Parameter Symbol


    OCR Scan
    PDF 078-A 306-A SIL00340 SiL00342 A1306A buz41

    BFW92

    Abstract: TRANSISTOR BFW 11 SQP5 2N6621 349 2110 Q62702-F321 Q68000-A4669 QQG4733 6621 transistor bfw 90
    Text: BSC D • Û235b05 0004731 7 « S I E G NPN Silicon RF Broadband Transistors T c rc\ t -» - SIEMENS AKTIENÛESELLSCHAF T - H 't r BFW 92 2 N 6621 BFW 9 2 is an epitaxial NPN silicon planar RF transistor in a plastic package similar to TO 119 50 B 3 DIN 41 86 7 ; intended for use as RF amplifier up to the GHz range,


    OCR Scan
    PDF 6535bQ5 2N6621. Q62702-F321 Q68000-A4669 temperatu077 QQG4733 BFW92 BFW92 TRANSISTOR BFW 11 SQP5 2N6621 349 2110 Q68000-A4669 6621 transistor bfw 90

    Untitled

    Abstract: No abstract text available
    Text: N E C ELECTRONICS INC 30E D • t457SaS ODEiSíl a ■ T -41 - L i f P H O T O T R A N S IS T O R PHI 03 DARLING TO N PHOTO T R A N S IS T O R The PH 103 is a darlington photo transistor in a plastic molded package, PA C K A G E D IM E N SIO N S and very suitable for a detector of a photo interrupter.


    OCR Scan
    PDF t457SaS b427S25 T-41-63 PH103