C67078-S1306-A3
Abstract: 60f5
Text: BUZ 41 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 41 A 500 V 4.5 A 1.5 Ω TO-220 AB C67078-S1306-A3 Maximum Ratings Parameter Symbol Continuous drain current
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O-220
C67078-S1306-A3
C67078-S1306-A3
60f5
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BUZ41
Abstract: C67078-S1306-A3
Text: BUZ 41 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 41 A 500 V 4.5 A 1.5 Ω TO-220 AB C67078-S1306-A3 Maximum Ratings Parameter Symbol Continuous drain current
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O-220
C67078-S1306-A3
BUZ41
C67078-S1306-A3
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IFN423
Abstract: IFN421 IFN422 electrometers electrometer
Text: Databook.fxp 1/14/99 12:22 PM Page B-41 B-41 01/99 IFN421, IFN422, IFN423 Dual N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Very High Input Impedance Differential Amplifiers ¥ Electrometers Device Dissipation Derate 3.2 mW/°C to 50°C
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IFN421,
IFN422,
IFN423
IFN421
IFN422
IFN423
electrometers
electrometer
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transistor tj 2499
Abstract: C67078-S3121-A2 transistor K D 2499 BUZ345 transistor D 2499 0/transistor tj 2499
Text: BUZ 345 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 345 100 V 41 A 0.045 Ω TO-218 AA C67078-S3121-A2 Maximum Ratings Parameter Symbol Continuous drain current
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O-218
C67078-S3121-A2
transistor tj 2499
C67078-S3121-A2
transistor K D 2499
BUZ345
transistor D 2499
0/transistor tj 2499
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BUZ345
Abstract: transistor tj 2499 C67078-S3121-A2 BUZ 82 transistor K D 2499 transistor D 2499
Text: BUZ 345 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 345 100 V 41 A 0.045 Ω TO-218 AA C67078-S3121-A2 Maximum Ratings Parameter Symbol Continuous drain current
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O-218
C67078-S3121-A2
BUZ345
transistor tj 2499
C67078-S3121-A2
BUZ 82
transistor K D 2499
transistor D 2499
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HOA0866-T55
Abstract: HOA087X SDP8406 SEP8506 U.S. Sensor
Text: Datasheet - HOA0866-T55 HOA0866-T55 HOA Series Infrared Transmissive Sensor, Transistor Output, Two Mounting Tabs, Plastic Package Features Representative photograph, actual product appearance may vary. ● ● ● ● ● Due to regional agency approval
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HOA0866-T55
HOA086X/087X
20and
20Settings/rabab/Desktop/Datasheet
20HOA0866-T55
HOA0866-T55
HOA087X
SDP8406
SEP8506
U.S. Sensor
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HOA0862-T55
Abstract: INFRARED TRANSISTOR HOA087X SDP8406 SEP8506 hoa0862
Text: Datasheet - HOA0862-T55 HOA0862-T55 HOA Series Infrared Transmissive Sensor, Transistor Output, Two Mounting Tabs, Plastic Package Features ● Representative photograph, actual product appearance may vary. ● ● ● ● Due to regional agency approval
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HOA0862-T55
HOA086X/087X
HOA0862-T55
INFRARED TRANSISTOR
HOA087X
SDP8406
SEP8506
hoa0862
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vjp44a
Abstract: MO-16B-AB TA11B TF11B cu50 ad 153 transistor transistor bd 905 transistor BC 185 mkt 344 MS-026-bcd
Text: Plastic Package Dimensional/Thermal Data The following table identifies all of the plastic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the plastic packages
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MS011798
vjp44a
MO-16B-AB
TA11B
TF11B
cu50
ad 153 transistor
transistor bd 905
transistor BC 185
mkt 344
MS-026-bcd
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sy 320 diode
Abstract: No abstract text available
Text: SIEMENS BUZ 41 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 41 A Vbs 500 V b ^DS on Package Ordering Code 4.5 A 1.5 Í2 TO-220 AB C67078-S1306-A3 Maximum Ratings Parameter Symbol Continuous drain current b Values
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O-220
C67078-S1306-A3
tempe96
fl23Sb05
0GA41L
sy 320 diode
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 41 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 41 A Vos 500 V fa 4.5 A Abs on 1 .5 ft Package Ordering Code TO-220 AB C67078-S1306-A3 Maximum Ratings Parameter Symbol Values Continuous drain current
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O-220
C67078-S1306-A3
00-----------------------V
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Transistor BFr 99
Abstract: Transistor BFR 96 TFC 718 S tfc 718 BFR34A Transistor BFR 38 TRANSISTOR 2SC 169 6620 bfr34 2N6620
Text: ÍSIEû ESC D • fl235bDS QQQMb70 2 NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers ^ _ _ BFR34A 2 N 6620 SIEMENS AKTIEN6ESELLSCHAF BFR 34 A is an epitaxial NPN silicon planar RF transistor in a plastic package similar to TO 119 50 B 3 DIN 41 867 intended for use in RF amplifiers up to the GHz range,
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fl235bDS
2N6620.
Q62702-F346-S1
Q68000-A4668
fl23Sfc
0004fc
BFR34A
200MHz
Transistor BFr 99
Transistor BFR 96
TFC 718 S
tfc 718
BFR34A
Transistor BFR 38
TRANSISTOR 2SC 169
6620
bfr34
2N6620
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BD 130 NPN transistor
Abstract: transistor BD 329 transistor BD Q62702-D401 BD329 JH transistor Q62702-D394 Q62902-B63 QQQ4347 BD330
Text: 25C D • 623SbOS 000434b 4 « S I E G _ NPN Silicon Planar Transistor BD 329 -SIEMENS AKTIENGESELLSCHAF 25C 043^6 O-.7 ^ SI - 0 7 BO 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 330 it is particularly
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00043Mb
Q62702-D394
329/BD
Q62702-D401
Q62902-B63
100ps
200jiS
BD329
BD 130 NPN transistor
transistor BD 329
transistor BD
Q62702-D401
BD329
JH transistor
Q62702-D394
Q62902-B63
QQQ4347
BD330
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Bd 130 NPN transistor
Abstract: 62702-D394 transistor z5
Text: 2SC D • 623SbQS QQQM3Mb M « S I E G NPN Silicon Planar Transistor - 25C BD 329 CK346 0 — 7 r ? i~. ° 7 SIEMENS AKTIENGESELLSCHAF BO 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 330 it is particularly
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623SbQS
CK346
329/BD
62702-D394
Q62702-D401
Q62902-B63
0QQ434fl
-T-33
Bd 130 NPN transistor
transistor z5
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transistor BD
Abstract: TRANSISTOR bd 330
Text: 2SC D • fl23SbDS QQQHBMI T M S I E G PNP Silicon Planar Transistor BD 330 _ 25C0 4 3 4 9 D T - 3 1 '/ ? SIEMENS AKTIENGESELLSCHAF BO 330 is an epitaxial PNP silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 329 it is particularly
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fl23SbDS
330/BD
Q62702-D395
Q62702-D401
Q62902-B63
235bQS
GQ04351
BD330
transistor BD
TRANSISTOR bd 330
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Transistor BFT 44
Abstract: transistor tt 2078 TRANSISTOR 2SC 458 Transistor B C 458 transistor npn d 2078 B-01 BFT12 Q62702-F390 gp 823 Q0047
Text: 1 - ’ asc D • ö23SbOS G004701 R « S I E G u‘ N PN Silicon RF Broadband Transistor BFT 12 SIEMENS AKTIENfiESELLSCHAF . D — 1 BFT 12 is an epitaxial N PN silicon planar RF transistor in a plastic package similar to TO 1 1 9 50 B 3 DIN 41 867 , intended for universal application in amplifiers up to the
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23SbOS
Q004701
Q62702-F390
Transistor BFT 44
transistor tt 2078
TRANSISTOR 2SC 458
Transistor B C 458
transistor npn d 2078
B-01
BFT12
Q62702-F390
gp 823
Q0047
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transistor D 2499
Abstract: transistor K D 2499 BUZ 82 BUZ345 transistor 2499
Text: SIEMENS BUZ 345 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 345 Vbs 100 V b 41 A flfasion 0.045 n Package Ordering Code TO-218AA C67078-S3121-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values
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O-218AA
C67078-S3121-A2
O-218AA
transistor D 2499
transistor K D 2499
BUZ 82
BUZ345
transistor 2499
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BFS20R
Abstract: IC mark A09 BFS 65 Q62702-F350 Q62702-F589 a10 transistor
Text: 2sc D m aaastas oooMb^s ? « s i e g r NPN Silicon RF Transistor BFS 20 BFS 20 R SIEMENS A K T I E N 6E SE LL SCH AF BFS 20 is an epitaxial NPN silicon planar RF transistor in TO 236 plastic package 23 A 3 DIN 41 869 , intended for use in film circuits. The transistor BFS 20 is marked "NA". It is also available upon request with changed
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a23Sb05
Q62702-F350
Q62702-F589
BFS20R
IC mark A09
BFS 65
Q62702-F350
Q62702-F589
a10 transistor
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Germanium power
Abstract: pnp germanium transistor AF379
Text: aSC D • 023SbD5 0QQ4QÔS 5 ■ S I E û T- PNP Germanium RF Transistor Of AF 379 - SIEMENS AKTIENGESELLSCHAF -fo r large sig n a l a p p lic a tio n s up to 9 0 0 M H z A F 379 is a PNP germanium planar RF transistor in 5 0 B 3 DIN 41 867 plastic package
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023SbD5
2701-F72
TartlbS45
voltage11
Germanium power
pnp germanium transistor
AF379
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transistor K D 2499
Abstract: transistor D 2499 S/transistor K D 2499 BUZ 82 transistor 2499 BUZ345
Text: SIEMENS SIPMOS Power Transistor BUZ 345 • N channel • Enhancement mode • Avalanche-rated Type Vos BUZ 345 100 V 41 A ^DS on Package 1> O rdering Code 0.045 £J TO-218 AA C67078-S3121-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 28 'C
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O-218
C67078-S3121-A2
transistor K D 2499
transistor D 2499
S/transistor K D 2499
BUZ 82
transistor 2499
BUZ345
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2073 transistor
Abstract: BFS20 siemens
Text: 2sc D m aaastas oooMb^s ? « s i e g r NPN Silicon RF Transistor BFS 20 BFS 20 R SIEMENS A K T I EN 6 ES EL LSC HA F B F S 2 0 is an epitaxial N P N silicon planar R F transistor in TO 2 3 6 plastic package 2 3 A 3 D IN 41 869 , intended for use in film circuits.
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transistor K D 2499
Abstract: No abstract text available
Text: BUZ 345 I nf ineon technologies SIPMOS Power Transistor • N channel £ • Enhancement mode • Avalanche-rated VPT05I56 3 Pin 2 Pin 1 G Type BUZ 345 Vbs b 100 V 41 A f iDS on 0.045 n Pin 3 S D Package Ordering Code TO-218 AA C67078-S3121-A2 Maximum Ratings
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VPT05I56
O-218
C67078-S3121-A2
S35bG5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
transistor K D 2499
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A1306A
Abstract: buz41
Text: SIEMENS SIPMOS Power MOS Transistor VDS /D ^ D S o n • BUZ 41A = 500 V = 4.5 A = 1-5 Q N channel • E nhancem ent mode • A valanche-proof • Package: TO -220 A B 1) Type Ordering code BUZ 41 A C 6 7078-A 1306-A 3 Maximum Ratings Parameter Symbol
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078-A
306-A
SIL00340
SiL00342
A1306A
buz41
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BFW92
Abstract: TRANSISTOR BFW 11 SQP5 2N6621 349 2110 Q62702-F321 Q68000-A4669 QQG4733 6621 transistor bfw 90
Text: BSC D • Û235b05 0004731 7 « S I E G NPN Silicon RF Broadband Transistors T c rc\ t -» - SIEMENS AKTIENÛESELLSCHAF T - H 't r BFW 92 2 N 6621 BFW 9 2 is an epitaxial NPN silicon planar RF transistor in a plastic package similar to TO 119 50 B 3 DIN 41 86 7 ; intended for use as RF amplifier up to the GHz range,
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6535bQ5
2N6621.
Q62702-F321
Q68000-A4669
temperatu077
QQG4733
BFW92
BFW92
TRANSISTOR BFW 11
SQP5
2N6621
349 2110
Q68000-A4669
6621
transistor bfw 90
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Untitled
Abstract: No abstract text available
Text: N E C ELECTRONICS INC 30E D • t457SaS ODEiSíl a ■ T -41 - L i f P H O T O T R A N S IS T O R PHI 03 DARLING TO N PHOTO T R A N S IS T O R The PH 103 is a darlington photo transistor in a plastic molded package, PA C K A G E D IM E N SIO N S and very suitable for a detector of a photo interrupter.
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t457SaS
b427S25
T-41-63
PH103
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