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    BD 130 NPN transistor

    Abstract: transistor BD 329 transistor BD Q62702-D401 BD329 JH transistor Q62702-D394 Q62902-B63 QQQ4347 BD330
    Text: 25C D • 623SbOS 000434b 4 « S I E G _ NPN Silicon Planar Transistor BD 329 -SIEMENS AKTIENGESELLSCHAF 25C 043^6 O-.7 ^ SI - 0 7 BO 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 330 it is particularly


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    PDF 00043Mb Q62702-D394 329/BD Q62702-D401 Q62902-B63 100ps 200jiS BD329 BD 130 NPN transistor transistor BD 329 transistor BD Q62702-D401 BD329 JH transistor Q62702-D394 Q62902-B63 QQQ4347 BD330

    siemens sab 82532

    Abstract: 82258 SA 82532 SAB 80286 csc 2323 sab80286 STT 3 SIEMENS 80286 microprocessor pin out diagram ESCC2 siemens sab 82525
    Text: SIEM ENS Enhanced Serial Communication Controller ESCC2 SAB 82532 Preliminary Data 1.1 CMOS 1C General Features S erial Interface • Two independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each


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    PDF CRC-32 235b05 82532N-10. 00702fl2 siemens sab 82532 82258 SA 82532 SAB 80286 csc 2323 sab80286 STT 3 SIEMENS 80286 microprocessor pin out diagram ESCC2 siemens sab 82525

    Q67006-A9171

    Abstract: hall current sensor 3A 4921-3U AEP01694 TLE4921-3U siemens magnetic sensors Siemens Hall AEA01259 AED01707 AED01709
    Text: SIEM ENS Dynamic Differential Hall Effect Sensor 1C TLE4921-3U Bipolar IC Features • • • • • • • • • • • • • • • Advanced performance High sensitivity Symmetrical thresholds High piezo resistivity Reduced power consumption South and north pole pre-induction possible


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    PDF TLE4921-3U 4921-3U Q67006-A9171 23SbQS 23Sb0S 4921-3U hall current sensor 3A AEP01694 TLE4921-3U siemens magnetic sensors Siemens Hall AEA01259 AED01707 AED01709

    BUZ54

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power Transistors BUZ 54 • N channel • Enhancement mode • Avalanche-rated VOTOSI 52 Type v DS ^DS on Package 1> Ordering Code BUZ 54 1000 V 5.1 A 2.0 £2 TO-204 AA C67078-S1010-A2 BUZ 54 A 1000 V 4.5 A 2.6 Q TO-204 AA C67078-S1010-A3


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    PDF O-204 C67078-S1010-A2 C67078-S1010-A3 BUZ54

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS TUA 601 OX preliminary IC-SPECIFICATION TV Mixer-Oscillator-PLL for 1.1 GHz page Contents 1 Functional Description, Application 2 3-4 Pin Defintion and Function 5 Block Diagram Circuit Description 6-10 Pinning, Package 11 Absolute Maximum Ratings 12


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    PDF S879-B200-V1 fl23SbD5

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 6fach-Silizium-Fotodiodenarray 6-Chip Silicon Photodiode Array KOM 2033 A KOM 2033 AF Maße in mm, w enn nicht anders a ngegeben/D im ensions in mm. unless otherw ise specified W esentliche M erkm ale Features • Speziell geeignet für Anwendungen im


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    PDF 0235bGS

    Untitled

    Abstract: No abstract text available
    Text: SIEM EN S SAB-C501 8-Bit C M O S M icroco n tro ller • Fully compatible to standard 8051 microcontroller • Versions for 12/20/40 MHz operating frequency • 8 K x 8 ROM SAB-C501 -1R only • 256 x 8 RAM • Four 8-bit ports • Three 16-bit Timers / Counters (Timer 2


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    PDF SAB-C501 SAB-C501 16-bit P-DIP-40 P-LCC-44 SAF-C501 SAB-C501-L/C501 80C32/C52 80C52

    SIEMENS BST h 05 90

    Abstract: 51214X SIEMENS BST N 35 SIEMENS BST g 02 60
    Text: SIEMENS Bl Dl Transceiver Optical Module 1300/1300 nm, Medium Power SBM 51214X • • • • • • Designed for application in passive-optical networks Integrated beam splitter Bidirectional Transmission in one optical window Laser diode with Multi-Quantum Well structure


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    PDF 51214X 1214A 51214G Q62702-Pxxxx 0073b7M 023SbDS G073b75 SIEMENS BST h 05 90 51214X SIEMENS BST N 35 SIEMENS BST g 02 60

    STT 3 SIEMENS 431

    Abstract: 80c517 Siemens sab 2793b-p
    Text: bOE D • fl2 3 5 fc iO S G G H 7T23 S IE M E N S SIEMENS 152 « S IE G A K T IE N G E S E L L S C H A F ^ High-Performance 8-Bit CMOS Single-Chip Microcontroller ^ e=r - / 9 - o 7 SAB 80C517/80C537 Advanced Information SAB 80C517 SAB 80C537 Microcontroller with factory mask-programmable ROM


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    PDF 80C517 80C537 80C517/80C537 32-bit 16-bit 80C515 023SbOS 80C517/83C537 P-LCC-84 STT 3 SIEMENS 431 Siemens sab 2793b-p

    222-1

    Abstract: AF2N br 2222 npn 2222 A 2221 N 2222 2N2222 2221A A4075 a2222a
    Text: 2SC D • 023SbQS Q0Q4ÖÖÖ 7 « S I E G NPN Silicon Planar Transistors - -SIEMENS AKTIENGESELLSCH AF. . 2 N 2221 A 2 N 2222 A - 2 N 2221 A, and 2 N 2222 A are epitaxial NPN silicon planar transistors in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistors are


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    PDF 023SbQS Q62702-F414 -S122 fl23SbQ5 222-1 AF2N br 2222 npn 2222 A 2221 N 2222 2N2222 2221A A4075 a2222a

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS ¿ ¿ ¿ ¿ : ^íííííííííííííííííííííííííí^íííííííííííííííííííííííí^íí: ^ ^ ^ ^ ^ ^ ^ ^ ^ íí? íí? ? í? ? ííí:á íííí? íí? í^ ííf í^ : íííííííííííííííííííííííííííííííííííííííí^^ííííífííííííí:


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    PDF G10404Ã C509-L A8-A15 A535bDS 235bD5

    STT 3 SIEMENS

    Abstract: BU426A BU426 D-07 Q68000-A5164 Q68000-A5165
    Text: 25C » • ä235bGS 0004047 4 « S I E G !' T- J 3 -/J BU 426 BU 426 A NPN Silicon Power Transistors - SIEMENS AKTIEN6ESELLSCHAF BU 426 and BU 426 A are triple diffused silicon power switching transistors in SOT 93 case TOP 3 . They are outstanding for short switching times and high dielectric strength


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    PDF 6235bGS Q68000-A5164 Q68000-A5165 BU426 STT 3 SIEMENS BU426A D-07 Q68000-A5164 Q68000-A5165

    POWER SUPPLY BTS SIEMENS

    Abstract: siemens pwm 12v BTS630 E3230 sis 630 application note BTS SMD MARKING code 613
    Text: SIEMENS BTS 630 PWM Power Unit The device allows continuous power control for lamps,LEDs or inductive loads. • Highside switch • Overtemperatur protection • Short circuit / overload protection through pulse widt reduction and overload shutdown • Load dump protection


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    PDF T0220/7 E3128 B23SbDS fl23SbDS POWER SUPPLY BTS SIEMENS siemens pwm 12v BTS630 E3230 sis 630 application note BTS SMD MARKING code 613

    DDMS770

    Abstract: PC1210 SiEMENS EC 350 98 0
    Text: bGE ]> • Ô235b05 00457ti5 T3S M S I E C SIEMENS SIEMENS AKTI ENGESELLSCHAF ■7- 2 3 - Ö SI MOPAC Module VDS / d 7 BSM 294 F = 1000 V = 2 x 18 A R DS on = 0.63 £2 • • • • • • • Power module Half-bridge FREDFET N channel Enhancement mode


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    PDF 023SbOS C67076-A1151-A2 fl23Sbà S1M00189 DDMS770 PC1210 SiEMENS EC 350 98 0

    K4887-K4

    Abstract: B25355-K167-K4 ws dvd 290
    Text: MP DC Capacitors Smoothing, Supporting, Discharge B 25 355 High peak-current capability Wide capacitance and voltage range Construction • Self-healing • Paper dielectric • Oil and hard-wax impregnated tubular windings no PCB • Metal-sprayed face ends ensure reliable contacting


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    PDF KLK0875â KLK1270-C B25355-F6405-K1 fi235bQ5 K4887-K4 B25355-K167-K4 ws dvd 290

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS TUA 6110XS preliminary IC-SPECIFICATION Contents SAT Mixer-Oscillator-PLL for 3.3GHz paf>e Contents 1 Functional Description, Application Pin Defintion and Function Block Diagram 5 Circuit Description 6-10 Pinning, Package 11 Absolute Maximum Ratings


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    PDF 6110XS S879-A100-V1 6235bOS

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5117400BJ -50/-60/-70 HYB 5117400BT -50/-60/-70 Advanced Inform ation • • • • 4 194 304 w ords by 4-bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time: 50 ns -50 version


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    PDF 5117400BJ 5117400BT

    SMD MARKING CODE E2H

    Abstract: SMD MARKING CODE E4H marking code C1H SMD Q67120-C991 SAB-C501-L24N Siemens SAB-C501 siemens sm2 c947 smd marking b4h C501
    Text: SIEMENS 8-Bit CMOS Microcontroller C501 Preliminary • • • • • • • • • • • Fully compatible to standard 8051 microcontroller Versions for 12/24/40 MHz operating frequency 8 K x 8 ROM C501 -1R only 256 x 8 RAM Four 8-bit ports Three 16-bit Timers / Counters (Timer 2 with Up/Down Counter feature)


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    PDF 16-bit P-DIP-40, P-LCC-44 P-MQFP-44 SAB-C501 SAF-C501 256x8 C501-1R MCA01762 C501-L/C501-1R SMD MARKING CODE E2H SMD MARKING CODE E4H marking code C1H SMD Q67120-C991 SAB-C501-L24N Siemens SAB-C501 siemens sm2 c947 smd marking b4h C501

    NTC 4,7 Siemens

    Abstract: HT 1200-4 S041E Q7101-H6615 siemens slic DBM01 qsicos-program S-041 S041 E siemens 58 295 84 pin chip
    Text: S IE M E N S Four Channel Codec Filter SICOFP-4 PEB 2465 Preliminary Data 1.1 CMOS Features or PABX-channels Specification according to rele\ LSSGR recommendations Digital signal processing technique Programmable interface optimizf SLICs and transform er solutions


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    PDF P-MQFP-64 fl23SbOS P-MQFP-64 -BIDI64X 235b05 007flb05 NTC 4,7 Siemens HT 1200-4 S041E Q7101-H6615 siemens slic DBM01 qsicos-program S-041 S041 E siemens 58 295 84 pin chip

    BRY 300

    Abstract: BRY 100 BRY 55 200 BRY 55 A HS 817 VDR Siemens BRy55 siemens thyristors bry65 BRY 21
    Text: 2SC D • flSBSbQS QQQ47bR T ■ S I E 6 r . 1 C3L U t lO T a -fZ _ . 2 o -// Silicon Miniature Thyristors ~ BRY 55/30. - S I E M E N S A K T IE N G E S E L L S C H A F _BRY SS/3_00 These diffused silicon thyristors in TO 92 plastic package 10 A 3 DIN 41868} are


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    PDF QQQ47bR Q68000-A114-F10 Q68000-A183-F10 Q68000-A184-F10 Q68000-A520-F10 Q68000-A185-F10 50to400H2 126iC 623SbOS BRY 300 BRY 100 BRY 55 200 BRY 55 A HS 817 VDR Siemens BRy55 siemens thyristors bry65 BRY 21

    HDSP7301

    Abstract: HDSP-7301 7 segment led display SIEMENS Siebensegmentanzeige
    Text: SI EM EN S 4?E m fl23SbD5 0027011 4 «SIEG SIEMENS AKTIENGESELLSCHAF "P-41-33 Sieben-Segment-Anzeige Seven Segment Display 7,6 mm 0.3” HDSP-7301 Besondere Merkmale • Hohe Lichtstärke • Gehäuse ist optimiert fur den Einsatz bei starkem Fremdlicht


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    PDF fl23SbD5 P-41-33 HDSP-7301 235b05 623SbOS HDSP7301 HDSP-7301 7 segment led display SIEMENS Siebensegmentanzeige

    Untitled

    Abstract: No abstract text available
    Text: 25C D • S 3-/3 6235bOS 0004047 4 « S I E G !' BU 426 BU 426 A NPN Silicon Power Transistors - SIEMENS AKTIENGESELLSCHAF BU 426 and BU 426 A are triple diffused silicon power switching transistors in SOT 93 case TOP 3 . They are outstanding for short switching times and high dielectric strength


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    PDF 6235bOS Q68000-A5164 Q68000-A5165 curre25 BU426

    AF239

    Abstract: transistor h5c AF 239 0406H F239 Q60106-X239 A23Sb05 WTV4 AAO-4A
    Text: ESC D • ÔEBSbQS QQOMQbb R PNP Germanium RF Transistor ISIEû 25C 04066 0 AF 239 r-3 t- ¿>7 SIEMENS AKTIENGESELLSCHAF - for UHF input stages up to 900 MHz AF 239 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads are electrically insulated from the case.


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    PDF A23Sb05 AF239 Q60106-X239 T1-0221) transistor h5c AF 239 0406H F239 Q60106-X239 WTV4 AAO-4A

    Untitled

    Abstract: No abstract text available
    Text: Metallized Polypropylene Film Capacitors MKP in Plastic Case B 32 652 . B 32 656 MKP wound capacitors Very small dimensions Construction -c: • Dielectric: polypropylene • Wound capacitor technology with internal series connection for l/R >1250 Vdc


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    PDF KMK0200-U 6335b05 630Vdc/250V Vdc/250 A235bD5 DD7H67T Vdc/700 623SbOS