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    TRANSISTOR T05 Search Results

    TRANSISTOR T05 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR T05 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor marking t05

    Abstract: PDTC124
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTA124EU PNP resistor-equipped transistor Product specification Supersedes data of 1997 Jul 11 File under Discrete Semiconductors, SC04 1998 May 20 Philips Semiconductors Product specification PNP resistor-equipped transistor


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    PDF M3D102 PDTA124EU PDTA124EU MAM135 OT323) SCA60 115104/1200/02/pp8 transistor marking t05 PDTC124

    transistor marking t05

    Abstract: T05 sot-23 transistor t05 h 033 cht05
    Text: CHENMKO ENTERPRISE CO.,LTD CHT05PT SURFACE MOUNT NPN General Purpose Transistor VOLTAGE 60 Volts CURRENT 0.5 Ampere APPLICATION * General purpose applications. SOT-23 * NPN General Purpose Transistor .066 1.70 CONSTRUCTION .110 (2.80) .082 (2.10) .119 (3.04)


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    PDF CHT05PT OT-23 OT-23) 500mA) transistor marking t05 T05 sot-23 transistor t05 h 033 cht05

    CHT05GP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHT05GP SURFACE MOUNT NPN General Purpose Transistor VOLTAGE 60 Volts CURRENT 0.5 Ampere APPLICATION * General purpose applications. SOT-23 * NPN General Purpose Transistor .066 1.70 CONSTRUCTION .110 (2.80) .082 (2.10) .119 (3.04)


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    PDF CHT05GP OT-23 OT-23) 500mA) CHT05GP

    MTL4N22

    Abstract: static characteristics of optocoupler optocoupler 5V OPTOCOUPLER DSA0019619 optocoupler C 837
    Text: MTL4N22 MTL4N23 MTL4N24 SINGLE CHANNEL OPTOCOUPLER Features: • • • • • Applications: Overall current gain … 1.5 typical Base lead provided for conventional biasing Rugged package High gain, high voltage transistor +1kV electrical isolation transistor


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    PDF MTL4N22 MTL4N23 MTL4N24 MTL4N22-4 MTL4N22, MTL4N24 MIL-PRF-19500 MTL4N22 MTL4N23 static characteristics of optocoupler optocoupler 5V OPTOCOUPLER DSA0019619 optocoupler C 837

    transistor TO220

    Abstract: TO-220 transistor package T03A TA15A T02D TA15D TA03F T-03-A T03B T03D
    Text: Transistor Outline TO-220 2 Lead Molded TO-220 NS Package Number T02D 1999 National Semiconductor Corporation MS101173 www.national.com Transistor Outline (TO-220) May 1999 2 Lead Molded TO-220 NS Package Number TA02A 3 Lead Molded TO-220 NS Package Number T03A


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    PDF O-220) O-220 MS101173 TA02A transistor TO220 TO-220 transistor package T03A TA15A T02D TA15D TA03F T-03-A T03B T03D

    transistor 600v 500a

    Abstract: T0500NA25 D-68623 T0500 ic 90807
    Text: WESTCODE Date:- 10 Mar, 2003 Data Sheet Issue:- 2 An IXYS Company Provisional data Insulated Gate Bi-Polar Transistor Type T0500NA25E Development Type Number: TX044NA25E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage


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    PDF T0500NA25E TX044NA25E) T0500NA25E transistor 600v 500a T0500NA25 D-68623 T0500 ic 90807

    T0510VB45E

    Abstract: No abstract text available
    Text: Date:- 1 October, 2012 Data Sheet Issue:- P1 Insulated Gate Bi-Polar Transistor Type T0510VB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.


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    PDF T0510VB45E T0510VB45E

    NTE95

    Abstract: No abstract text available
    Text: NTE95 Silicon NPN Transistor High Voltage, High Power Switch Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V


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    PDF NTE95 10-32-UNF-2A NTE95

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MP4104 T05HIBA POWER TRANSISTOR MODULE SILICON NPN EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 M P a 1 nj HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS U nit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. 25.210.2


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    PDF T05HIBA MP4104

    TO-98

    Abstract: transistor MPSA06 NPN Transistor TO92 2N3391A 2N3904 TO-92 type transistor 2n3903 2N2924 ges3 2N2926-5 2N3390
    Text: - THOriSON/ DISTRIBUTOR SñE D m T05t,ñ?3 0005737 • TCSK Discrete Transistors Small-Signal Bipolar Transistors In O rder of Ascending I q NPN Signal Transistor Selector Guide NPN Signal Transistor Selector Guide (M ax.) In A v (BR)CEO (M in.)


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    PDF 1CJ5bfl73 2N3390 2N2923 2N2924 2N2925 2N2926 2N2926-5 2N3391 2N3391A 2N3392 TO-98 transistor MPSA06 NPN Transistor TO92 2N3904 TO-92 type transistor 2n3903 ges3

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MP4101 T05HIBA POWER TRANSISTOR MODULE SILICON NPN EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 M PZL 1 n 1 • V ■ ■ ■ ■ w ■ HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE. INDUSTRIAL APPLICATIONS Unit in mm INDUCTIVE LOAD SWITCHING.


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    PDF T05HIBA MP4101

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    IC SEM 2105

    Abstract: common emitter transistors
    Text: What H E W L E T T * miltm PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30533 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:


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    PDF AT-30511 AT-30533 AT-30533 OT-23 OT-143 sAT-30511 OT-23, IC SEM 2105 common emitter transistors

    transistor 2n

    Abstract: 2N4036 Solitron Transistor
    Text: SOLITRON DEVICES INC 1.0 1.1 SECTION I: ' 3 bl DE|ö3bflbOS DDDIE'H □ I 0 ENGINEERING DEVICE SPECIFICATION TRANSISTOR 2N kOJ>6 , ( 69SP4056 ) SILICON DEVICE DESCRIPTION Construction: This device is a PNP Diffused Planar Power Transistor packaged in a single-ended T0-5 case.


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    PDF 69SP4056 f69SP4036) -150mA 7-16-69DRWN. transistor 2n 2N4036 Solitron Transistor

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    Untitled

    Abstract: No abstract text available
    Text: r z 7 S C S - T H O M S O N ^ 7# ¡MH Bi^ i[LiiS7[^©lMll0 i _ M J E 1 3 0 0 5 SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE13005 is a silicon multiepitaxial mesa NPN transistor in Jedec T0-220 plastic package


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    PDF MJE13005 T0-220

    transistor t05

    Abstract: N2907 N2907A 2N3040 t05 transistor 2N2927A 2N2280 2N3064 2N1921 2N3058
    Text: DIODE TRANSISTOR CO INC AM de ! 5flMfl35g D O D O m O 1 | o/ DIODE TRANSISTOR CD.i \ C. (201) 688-0400 • Telex: 139-385 • Outside NY & NJ area call TO LL FR EE 800-526-4581 FAX No. 201-575-5883 SILICON NPN LOW POWER TRANSISTORS DEVICES PKG DEVICES 2N327A


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    PDF 5flMfl35g DETRdf\J515TQR 2N327A N328A 2N329A 2N330 2N726 2N863 2N939 2N945 transistor t05 N2907 N2907A 2N3040 t05 transistor 2N2927A 2N2280 2N3064 2N1921 2N3058

    k2964

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2964 TENTATIVE T05HIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-MOSVI 2 S K2 9 64 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm


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    PDF T05HIBA 2SK2964 VDD-24V, k2964

    Solitron Transistor

    Abstract: No abstract text available
    Text: 83 68 60 2 S O L I T RO N D EV IC E S _ ~bl D 6 1C 01273 INC ENGINEERING D E VICE SPECIFICATION 7 ^ 9 - ^ ’3>-3210110 D | S3tiflbD5 DD01S73 T | 1.0 SECTION I: 1.1 Construction: Transistor (Code: 91SP311of .DEVICE D E S C R I P T I O N , This device is an NPN Diffused Planar Power Transistor


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    PDF 91SP311of DD01S73 C--13 Solitron Transistor

    2SK2228

    Abstract: Transistor 3202 1 A 60
    Text: TO SH IBA SDOSSO T05H IBA FIELD EFFECT TRANSISTOR 2SK2228 QQE33Ô3 447 SILICON N CHANNEL M OS TYPE L2-tt-MOSIV 2SK2228 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND M OTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm


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    PDF QQE33Ã 2SK2228 T05HIBA O-22QAB O-220 50URCE O-220FL 00E3b43 O-220SM Transistor 3202 1 A 60