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Central Semiconductor Corp MJE13005-PBFREE TRANS NPN 400V 4A TO220-3
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onsemi MJE13005 TRANS NPN 400V 4A TO220
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DigiKey	MJE13005	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Quest Components	MJE13005		572			1 $0.84 10 $0.84 100 $0.392 1000 $0.35 10000 $0.35	Buy Now
	MJE13005		284			1 $1.1 10 $1.1 100 $0.55 1000 $0.55 10000 $0.55	Buy Now
	MJE13005		36			1 $1.4 10 $1.12 100 $0.84 1000 $0.84 10000 $0.84	Buy Now
onsemi MJE13005G TRANS NPN 400V 4A TO220
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ComSIT USA	MJE13005G		8,227			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Micro Commercial Components MJE13005-BP TRANS NPN 400V 4A TO220AB
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DigiKey	MJE13005-BP	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Micro Commercial Components MJE13005F-BP TRANS NPN 420V 4A ITO220AB
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DigiKey	MJE13005F-BP	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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MJE13005 Datasheets (70)

Part	Manufacturer	Description	Datasheet Type	PDF
MJE13005	Central Semiconductor	TRANS GP BJT NPN 400V 4A 3TO-220	Original	PDF
MJE13005	Fairchild Semiconductor	High Voltage Switch Mode Application	Original	PDF
MJE13005	Korea Electronics	Switching Transistor	Original	PDF
MJE13005	Motorola	Silicon NPN Transistor	Original	PDF
MJE13005	Motorola	4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 75 WATTS	Original	PDF
MJE13005	On Semiconductor	SWITCHMODE Series NPN Silicon Power Transistors	Original	PDF
MJE13005	On Semiconductor	4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS - 75 WATTS	Original	PDF
MJE13005	Philips Semiconductors	Silicon Diffused Power Transistors	Original	PDF
MJE13005	Sinyork	Mini size of Discrete semiconductor elements	Original	PDF
MJE13005	STMicroelectronics	SILICON NPN SWITCHING TRANSISTOR	Original	PDF
MJE13005	USHA	Switchmode power transistor. High voltage, high speed power switching inductive circuits. Vceo(sus) = 400Vdc, Vcev = 700Vdc, Vebo = 9Vdc.	Original	PDF
MJE13005	USHA	NPN, silicon plastic power transistor. For 115 and 220V switch-mode applications such as switching regulators, inverters motor controls, solenoid/relay drivers and deflection circuits. Vceo(sus) = 400Vdc, Vcev = 700Vdc, Veb = 9Vdc, Ic = 4Adc, Pd = 75W.	Original	PDF
MJE13005	Various Russian Datasheets	Transistor	Original	PDF
MJE13005	Wing Shing Computer Components	NPN SILICON TRANSISTOR(ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT)	Original	PDF

MJE13005	Advanced Semiconductor	RANSISTOR,BJT,DARLINGTON,NPN,500V V(BR)CEO,50A I(C),TO-204AE	Scan	PDF
MJE13005	Central Semiconductor	Power Transistors	Scan	PDF
MJE13005	Continental Device India	Semiconductor Device Data Book 1996	Scan	PDF
MJE13005	General Electric	Power Transistor Data Book 1985	Scan	PDF
MJE13005	Korea Electronics	Switching Transistor	Scan	PDF
MJE13005	Korea Electronics	TRIPLE DIFFUSED NPN TRANSISTOR	Scan	PDF

MJE13005 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
equivalent mje13005 Abstract: 2N2222 transistor output curve transistor mje13005 mje13005 equivalent Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.	Original	PDF	MJE13005 O-220 QW-R203-018 equivalent mje13005 2N2222 transistor output curve transistor mje13005 mje13005 equivalent
equivalent mje13005 Abstract: 1N4933 equivalent Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.	Original	PDF	MJE13005 O-220 QW-R203-018 equivalent mje13005 1N4933 equivalent
equivalent mje13005 Abstract: Ferroxcube core 2N2222 curve mje13005 equivalent equivalent transistor 2N2905 MR826 equivalent circuit based on MJE13005 MJE13005 transistor mje13005 Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.	Original	PDF	MJE13005 MJE13005L-x-T60-K QW-R203-018 equivalent mje13005 Ferroxcube core 2N2222 curve mje13005 equivalent equivalent transistor 2N2905 MR826 equivalent circuit based on MJE13005 MJE13005 transistor mje13005
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005-K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.	Original	PDF	MJE13005-K QW-R203-045
2n222 TRANSISTOR Abstract: MJE13005G equivalent mje13005 transistors mje13005 transistor 2n222 circuit based on MJE13005 1N493 AMP24 1N5820 2N222 Text: MJE13005G SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls,	Original	PDF	MJE13005G MJE13005/D 2n222 TRANSISTOR MJE13005G equivalent mje13005 transistors mje13005 transistor 2n222 circuit based on MJE13005 1N493 AMP24 1N5820 2N222
IC2A Abstract: MJE13005F Text: SEMICONDUCTOR MJE13005F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FLUORESCENT LIGHT BALLASTOR APPLICATION. FEATURES ・Excellent Switching Times	Original	PDF	MJE13005F IC2A MJE13005F
13005D Abstract: transistor 13005D MJE13005D 13005 transistor MJE -1103 MJE13005-D diode 611 mje130 MJE1300 Text: SEMICONDUCTOR MJE13005D MARKING SPECIFICATION TO-220AB PACKAGE 1. Marking method Laser Marking or Ink Marking. 2. Marking 1 K MJE 2 13005D 3 No. 611 4 Item Marking Description KEC K KEC CORP. MJE Device Name MJE13005D 13005D 2007. 9. 4 hFE Grade - Lot No.	Original	PDF	MJE13005D O-220AB 13005D 13005D transistor 13005D MJE13005D 13005 transistor MJE -1103 MJE13005-D diode 611 mje130 MJE1300
application notes MJE13005 Abstract: No abstract text available Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MJE13005 Features • Mounting Torgue: 5 in-lbs Maximum Lead Free Finish/RoHS Compliant Note 1 ("P" Suffix designates	Original	PDF	MJE13005 -55OC 3DD13005 O-220 application notes MJE13005
equivalent mje13005 Abstract: transistor 2N222 mje13005-5 2n222 TRANSISTOR 1N493 1N4933 2N222 2N2905 MJE13005 MJE13005G Text: MJE13005 Preferred Device SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications	Original	PDF	MJE13005 MJE13005/D equivalent mje13005 transistor 2N222 mje13005-5 2n222 TRANSISTOR 1N493 1N4933 2N222 2N2905 MJE13005 MJE13005G
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  TO-220 TO-220F DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,	Original	PDF	MJE13005D O-220 O-220F MJE13005D O-251 QW-R502-379
Untitled Abstract: No abstract text available Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit 1 TO-220F 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO	Original	PDF	MJE13005 O-220F Co000 QW-R219-001 100ms
mje13005df Abstract: IC free Text: SEMICONDUCTOR MJE13005DF TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. A ・Built-in Free wheeling Diode makes efficient anti saturation operation. C P ・Low base drive requirement. B E SYMBOL RATING UNIT	Original	PDF	MJE13005DF mje13005df IC free
equivalent mje13005 Abstract: circuit based on MJE13005 MJE13005L-TA3-T transistor B c167 MJE13005-TA3-T MJE13005-TF3-T MJE210 MR826 1N4933 MJE13005 Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS 1 DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.	Original	PDF	MJE13005 O-220 O-220F MJE13005L QW-R203-018 equivalent mje13005 circuit based on MJE13005 MJE13005L-TA3-T transistor B c167 MJE13005-TA3-T MJE13005-TF3-T MJE210 MR826 1N4933 MJE13005
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.	Original	PDF	MJE13005 QW-R203-018.

MJE13005L Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005-Q NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.	Original	PDF	MJE13005-Q QW-R221-027 MJE13005L
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005-K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.	Original	PDF	MJE13005-K QW-R203-045
TRANSISTOR 400 VOLTS Abstract: MJE13005 MJE13005G Text: MJE13005 Preferred Device SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications	Original	PDF	MJE13005 TRANSISTOR 400 VOLTS MJE13005 MJE13005G
mje13005 Abstract: MJE-13005 Text: MJE13005 SILICON NPN SWITCHING TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE13005 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-220 plastic package particularly intended for switch-mode applications. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM	Original	PDF	MJE13005 MJE13005 O-220 O-220 MJE-13005
MJE13005H Abstract: MJE13005HL Shenzhen SI Semiconductors, LTD Text: Shenzhen SI Semiconductors Co., LTD. Product Specification MJE13005HL MJE LOW VOLTAGE SERIES TRANSISTORS FEATURES APPLICATION: HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING SUITABLE FOR 110V CIRCUIT MODE WIDE SOA FLUORESCENT LAMP ELECTRONIC BALLAST Absolute Maximum Ratings	Original	PDF	MJE13005HL O-220 O-220 MJE13005H MJE13005HL Shenzhen SI Semiconductors, LTD
mje13005d equivalent Abstract: IC free MJE13005D IC free transistor hFE-100 low power Text: SEMICONDUCTOR MJE13005D TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. Built-in Free wheeling Diode makes efficient anti saturation operation. A O C Suitable for half bridge light ballast Applications. F Low base drive requirement.	Original	PDF	MJE13005D 05RRENT mje13005d equivalent IC free MJE13005D IC free transistor hFE-100 low power
MJE13004 Abstract: application notes MJE13005 equivalent mje13005 MJE13005 Text: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN PLASTIC POWER TRANSISTORS MJE13004 MJE13005 TO-220 Plastic Package Switchmode Series NPN Silicon Power Transistors ABSOLUTE MAXIMUM RATINGS	Original	PDF	MJE13004 MJE13005 O-220 C-120 MJE13004 MJE13005Rev240402E application notes MJE13005 equivalent mje13005 MJE13005
T1P122 Abstract: T1P41C MJE30SST t1p41 T1P31 T1P41A BD211 2SD880Y 2SD88D 2N529B Text: POWER PACKAGE TRANSISTORS NPN M a x im u m R a t in g s Type No. 2SC3039 MJE13005 T1PS0 vEB0 PD •CBO • vC8 (V) (V) (V) (W) (V) Min Min Min e Tc=25°C 500 400 700 400 500 400 7 50 9 Max 10 hFE 400 40 e 'c (A) Min 75 5 450 350 5 300 300 3 21 T1P48 400	OCR Scan	PDF	2SC3039 MJE13005 T1P49 MJE30SST TIP31A T1P41A TIP120 CIL4006 BD211 BD243 T1P122 T1P41C t1p41 T1P31 2SD880Y 2SD88D 2N529B
Untitled Abstract: No abstract text available Text: MOTOROLA SC XSTRS/R F 15E D J - t 3 t 7 S S M 000530*! S \| T - 3 3 -J 3 MOTOROLA MJE13004 MJE13005 SEMICONDUCTOR TECHNICAL DATA 4 AM PERE I o s i { » 'n o r s D a t a S h e e t NPN SILICON POWER TRANSISTORS SWITCHMODE S E R IE S NPN SILICO N POWER T R A N SIST O R S	OCR Scan	PDF	MJE13004 MJE13005
transistor hh 004 Abstract: E13005F hh 004 f E1300 W2W TRANSISTOR MJE13005F Text: SEMICONDUCTOR MJE13005F TECH NICAL D A T A t r ip le d iffu s e d npn t r a n s is t o r SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FLUORESCENT LIGHT BALLASTOR APPLICATION. FEATURES • Excellent Switching Times	OCR Scan	PDF	MJE13005F transistor hh 004 E13005F hh 004 f E1300 W2W TRANSISTOR MJE13005F

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Central Semiconductor Corp MJE13005-PBFREE

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MJE13005 Datasheets (70)

MJE13005 Datasheets Context Search

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2n222 TRANSISTOR

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13005D

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mje13005df

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MJE13005L

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TRANSISTOR 400 VOLTS

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MJE13004

T1P122

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transistor hh 004