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    TRANSISTOR S-PARAMETER AT 2GHZ Search Results

    TRANSISTOR S-PARAMETER AT 2GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR S-PARAMETER AT 2GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRL19

    Abstract: No abstract text available
    Text: T1L2003028-SP 30 W, 28V, 500 MHz—2 GHz, PowerbandTM LDMOS RF Power Transistor Introduction The T1L2003028-SP is a POWERBANDTM discrete LDMOS, enhancement mode RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an


    Original     		PDF T1L2003028-SP 500MHz 30watts 45Watts 500MHz-2GHz IRL19

    marking 93A

    Abstract: TRANSISTOR BI 187
    Text: BFP 93A NPN Silicon RF Transistor 3  For low distortion broadband amplifier and oscillators up to 2GHz at collector currents from 4 5 mA to 30 mA 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 93A


    Original     		PDF VPS05178 OT-143 900MHz Oct-12-1999 marking 93A TRANSISTOR BI 187

    transistor B 764

    Abstract: 952625 FCD50 74386 P1D8 pHEMT transistor 360 transistor di 960 T1P3002028-SP powerband N4030
    Text: TriQuint It TM PO W ER BAN D SEMICONDUCTOR T1P3002028-SP 30W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction The T1P3002028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed to operate from 500MHz to 2GHz in wide-band circuits.


    OCR Scan     		PDF T1P3002028-SP T1P3002028-SP 500MHz 30watts transistor B 764 952625 FCD50 74386 P1D8 pHEMT transistor 360 transistor di 960 powerband N4030

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Pin Configuration


    OCR Scan     		PDF Q62702-F1062 OT-23 BFT92 H35bD5 900MHz

    transistor bf 193

    Abstract: Siemens ESP 100
    Text: SIEMENS BFP 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fr = 8GHz F = 1 .3 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration


    OCR Scan     		PDF 900MHz Q62702-F1282 OT-143 transistor bf 193 Siemens ESP 100

    Transistor BFR 135

    Abstract: Transistor BFR Transistor BFR 35 transistor K 1412
    Text: SIEMENS BFR 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • f f = 8GHz F = 1.3dB at 900MHz 1=B 11 m Q62702-F1510 o li RCs CO BFR 193W 10 ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF 900MHz OT-323 Q62702-F1510 Transistor BFR 135 Transistor BFR Transistor BFR 35 transistor K 1412

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 93AW NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		PDF Q62702-F1489 OT-323 Q122QS3 900MHz

    SIEMENS BST 68

    Abstract: SIEMENS BST 68 L
    Text: SIEMENS BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		PDF 900MHz Q62702-F1577 OT-343 H35b05 BFP193W fl53SbOS SIEMENS BST 68 SIEMENS BST 68 L

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFQ 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF Q62702-F1049 OT-23 900MHz

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFT92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    OCR Scan     		PDF BFT92W Q62702-F1681 OT-323 900MHz

    E 94733

    Abstract: p1S SOT-89 BFr pnp transistor SPICE 2G6
    Text: SIEMENS BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF Q62702-F1488 OT-323 900MHz E 94733 p1S SOT-89 BFr pnp transistor SPICE 2G6

    transistor B 764

    Abstract: P1D8 179502 P3003 T1P3003028-SP 012673 0823838
    Text: TriQuint It TM PO W ER B A N D SEMICONDUCTOR T1P3003028-SP 30W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction The T1P3003028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed to operate from 500MHz to 2GHz in wide-band circuits.


    OCR Scan     		PDF T1P3003028-SP T1P3003028-SP 500MHz 30watts transistor B 764 P1D8 179502 P3003 012673 0823838

    E 94733

    Abstract: No abstract text available
    Text: SIEMENS BFR 92P NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT92 PNP • CECC-type available: CECC 50002/249 ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF BFT92 Q62702-F1050 OT-23 fl235bG5 900MHz 35b05 E 94733

    q1221

    Abstract: No abstract text available
    Text: SIEMENS BFR 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • f j = 8GHz F = 1.3dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! 1= B Package H


    OCR Scan     		PDF 900MHz Q62702-F1510 OT-323 535b05 BFR193W IS21I2= 23SL0S q1221

    transistor marking R2s

    Abstract: AMI siemens BFR93AW k150t
    Text: SIEMENS BFR 93AW NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA 1=B Q62702-F1489 h R2s m BFR 93AW ro ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF Q62702-F1489 OT-323 900MHz transistor marking R2s AMI siemens BFR93AW k150t

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFT 92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration BFT 92W W1s


    OCR Scan     		PDF Q62702-F1681 OT-323 0122E04 900MHz D1525D5

    transistor marking zg

    Abstract: sot-23 Transistor MARKING CODE ZG
    Text: SIEMENS BFR 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F=1.3dEl at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		PDF 900MHz OT-23 Q62702-F1218 BFR193 transistor marking zg sot-23 Transistor MARKING CODE ZG

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration Marking Ordering Code Type Q62702-F1611


    OCR Scan     		PDF Q62702-F1611 OT-143 0535bOS 900MHz fl235b05

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF Q62702-F1488 OT-323 053SbOS 900MHz 15nlA 23Sb05

    07027

    Abstract: 1.0037
    Text: SIEMENS BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • ¿r = 8GHz F =1.3dB at 900MHz Package BFP193W SOT-343 RCs Q62702-F1577 1= E 2=C 3=E CÛ !l ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF 900MHz BFP193W Q62702-F1577 OT-343 BFP193W 07027 1.0037

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA Q62702-F1144 1 =C 3=B LU II BFP 93A FEs ro ' it m ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF Q62702-F1144 OT-143 temp-11-01 053SbOS 235b05 900MHz

    012n3

    Abstract: No abstract text available
    Text: SIEMENS BFP193 NPN Silicon RF Transistor « For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F=1.3dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		PDF BFP193 900MHz Q62702-F1282 OT-143 012n3

    marking 93A

    Abstract: No abstract text available
    Text: SIEMENS BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Type


    OCR Scan     		PDF Q62702-F1144 OT-143 900MHz marking 93A

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 81 NPN Silicon RF Transistor • For low-rioise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 81 FAs


    OCR Scan     		PDF Q62702-F1611 OT-143 900MHz