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    BFR93AW Price and Stock

    Infineon Technologies AG BFR93AWH6327XTSA1

    RF TRANS NPN 12V 6GHZ SOT323-3
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    DigiKey BFR93AWH6327XTSA1 Digi-Reel 33,728 1
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    BFR93AWH6327XTSA1 Cut Tape 33,728 1
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    BFR93AWH6327XTSA1 Reel 30,000 3,000
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    Avnet Americas BFR93AWH6327XTSA1 Ammo Pack 16 Weeks, 3 Days 1
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    BFR93AWH6327XTSA1 Reel 4 Weeks 12,000
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    Verical BFR93AWH6327XTSA1 96,000 12,000
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    BFR93AWH6327XTSA1 51,000 3,000
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    BFR93AWH6327XTSA1 22,780 326
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    BFR93AWH6327XTSA1 9,878 101
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    Arrow Electronics BFR93AWH6327XTSA1 51,000 4 Weeks 3,000
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    BFR93AWH6327XTSA1 Cut Strips 9,878 4 Weeks 1
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    Newark BFR93AWH6327XTSA1 Cut Tape 1,451 1
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    BFR93AWH6327XTSA1 Reel 3,000
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    Chip1Stop BFR93AWH6327XTSA1 Cut Tape 22,780
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    EBV Elektronik BFR93AWH6327XTSA1 6,000 5 Weeks 3,000
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    GlobX GmbH BFR93AWH6327XTSA1 245,017
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    New Advantage Corporation BFR93AWH6327XTSA1 6,000 1
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    Win Source Electronics BFR93AWH6327XTSA1 192,022
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    Rochester Electronics LLC BFR93AW135

    SMALL SIGNAL BIPOLAR TRANSISTOR
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    NXP Semiconductors BFR93AW,115

    RF TRANS NPN 12V 5GHZ SOT323-3
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    BFR93AW,115 Digi-Reel 1
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    Avnet Silica BFR93AW,115 27 Weeks 3,000
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    NXP Semiconductors BFR93AW,135

    RF TRANS NPN 12V 5GHZ SOT323-3
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    Verical BFR93AW,135 41,895 3,619
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    Rochester Electronics BFR93AW,135 41,895 1
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    Infineon Technologies AG BFR-93AW-E6327

    RF TRANS NPN 12V 6GHZ SOT323-3
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    DigiKey BFR-93AW-E6327 Reel 12,000
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    BFR93AW Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFR93AW Infineon Technologies NPN Silicon RF transistor for low distortion broadband amplifiers-oscillators Original PDF
    BFR93AW NXP Semiconductors BFR93AW - NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; fT: 5 GHz; Frequency: 2.1 MHz; GUM @ f1: 13 dB; GUM @ f2: 8 dB; Gain @ 900 Mhz: 13 dB; IC: 35 mA; Noise figure: [email protected]@f1 dB; Ptot: 300 mW; Polarity: NPN Original PDF
    BFR93AW Philips Semiconductors NPN 5 GHz wideband transistor Original PDF
    BFR93AW Philips Semiconductors NPN 6 GHz Wideband Transistor Original PDF
    BFR93AW Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BFR93AW Siemens NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) Original PDF
    BFR93AW Vishay Telefunken Silicon NPN Planar RF Transistor Original PDF
    BFR93AW Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFR93AW Philips Semiconductors NPN 5 GHz wideband transistor Scan PDF
    BFR93AW,115 NXP Semiconductors NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; fT: 5 GHz; Frequency: 2.1 MHz; GUM @ f1: 13 dB; GUM @ f2: 8 dB; Gain @ 900 Mhz: 13 dB; IC: 35 mA; Noise figure: [email protected]@f1 dB; Ptot: 300 mW; Polarity: NPN ; Package: SOT323 (SC-70); Container: Tape reel smd Original PDF
    BFR93AW,115 NXP Semiconductors BFR93 - TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, UMT3, CMPAK, S-MINI PACKAGE-3, BIP RF Small Signal Original PDF
    BFR93AW,135 NXP Semiconductors NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; fT: 5 GHz; Frequency: 2.1 MHz; GUM @ f1: 13 dB; GUM @ f2: 8 dB; Gain @ 900 Mhz: 13 dB; IC: 35 mA; Noise figure: [email protected]@f1 dB; Ptot: 300 mW; Polarity: NPN ; Package: SOT323 (SC-70); Container: Tape reel smd Original PDF
    BFR93AW,135 NXP Semiconductors BFR93AW - NPN 5 GHz wideband transistor, SOT323 Package, Standard Marking, Reel Pack, SMD, Large Original PDF
    BFR 93AW E6327 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR NPN RF 12V SOT-323 Original PDF
    BFR93AWE6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN RF 12V SOT-323 Original PDF
    BFR93AWH6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 12V 90MA SOT323 Original PDF
    BFR93AWH6327XTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS RF NPN 12V 90MA SOT323 Original PDF
    BFR93AWT/R NXP Semiconductors NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; fT: 5 GHz; Frequency: 2.1 MHz; GUM @ f1: 13 dB; GUM @ f2: 8 dB; Gain @ 900 Mhz: 13 dB; IC: 35 mA; Noise figure: [email protected]@f1 dB; Ptot: 300 mW; Polarity: NPN ; Original PDF
    BFR93AWTR Philips Semiconductors NPN 5 GHz wideband transistor Original PDF
    BFR93AWT/R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    BFR93AW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor marking R2s

    Abstract: BFR93AW marking R2s poon BCR108W
    Text: BFR93AW NPN Silicon RF Transistor* • For low distortionbroadband amplifiers and oscillators up to 2 GHz at collector currents from 3 2 1 5 mA to 30 mA * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution! Type


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    PDF BFR93AW OT323 transistor marking R2s BFR93AW marking R2s poon BCR108W

    Untitled

    Abstract: No abstract text available
    Text: BFR93AW Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)15 I(C) Max. (A)35m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


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    PDF BFR93AW

    BFR93AW

    Abstract: B 1359 marking A3 amplifier 449
    Text: BFR93AW Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure 1 13 652 2 13 570 3 Marking: WR2


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    PDF BFR93AW D-74025 07-Nov-97 BFR93AW B 1359 marking A3 amplifier 449

    MARKING WR2 SOT-23

    Abstract: ZS 633
    Text: BFR93A / BFR93AR / BFR93AW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • • • • • High power gain High transition frequency e3 Low noise figure Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC


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    PDF BFR93A BFR93AR BFR93AW 2002/95/EC 2002/96/EC OT-23 OT-323 OT-23 MARKING WR2 SOT-23 ZS 633

    BFR93AW

    Abstract: marking code R2S 34
    Text: BFR93AW NPN Silicon RF Transistor 3  For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR93AW


    Original
    PDF BFR93AW VSO05561 OT323 BFR93AW marking code R2S 34

    BFR93AW

    Abstract: BFR93A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR93AW NPN 5 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 1995 Sep 18 Philips Semiconductors Product specification NPN 5 GHz wideband transistor


    Original
    PDF BFR93AW OT323 BFR93AW BFR93A. BFR93A

    ZS 633

    Abstract: BFR93A application board MARKING WR2 SOT-23 B 1359 BFR93A BFR93AR BFR93AW
    Text: BFR93A/BFR93AR/BFR93AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure


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    PDF BFR93A/BFR93AR/BFR93AW BFR93A BFR93AR BFR93AW D-74025 20-Jan-99 ZS 633 BFR93A application board MARKING WR2 SOT-23 B 1359

    Untitled

    Abstract: No abstract text available
    Text: BFR93AW NPN Silicon RF Transistor • For low distortion amplifiers and oscillators up to 2 GHz at collector currents from 3 2 1 5 mA to 30 mA • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution!


    Original
    PDF BFR93AW AEC-Q101 OT323

    BFR93AW

    Abstract: VSO05561
    Text: BFR93AW NPN Silicon RF Transistor 3  For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR93AW


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    PDF BFR93AW VSO05561 OT323 900MHz Jul-30-2001 BFR93AW VSO05561

    sot-23 MARKING 636

    Abstract: ZS 1052 AC ZS 633 BFR93a
    Text: BFR93A / BFR93AR / BFR93AW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • High power gain • High transition frequency • Low noise figure 2 3 1 SOT-23 Applications Wide band amplifier up to GHz range. 3 Mechanical Data


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    PDF BFR93A BFR93AR BFR93AW OT-23 OT-23 BFR93AW sot-23 MARKING 636 ZS 1052 AC ZS 633

    BFR93A

    Abstract: No abstract text available
    Text: BFR93A / BFR93AR / BFR93AW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • High power gain • High transition frequency • Low noise figure 2 3 1 SOT-23 Applications Wide band amplifier up to GHz range. 3 Mechanical Data


    Original
    PDF BFR93A BFR93AR BFR93AW OT-23 OT-23 BFR93AW

    Low Distortion Amplifiers

    Abstract: BFR93AW
    Text: BFR93AW NPN Silicon RF Transistor • For low distortion amplifiers and oscillators up to 2 GHz at collector currents from 3 2 5 mA to 30 mA 1 • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution!


    Original
    PDF BFR93AW AEC-Q101 OT323 Low Distortion Amplifiers BFR93AW

    Untitled

    Abstract: No abstract text available
    Text: BFR93A / BFR93AR / BFR93AW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • • • • • High power gain High transition frequency e3 Low noise figure Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC


    Original
    PDF BFR93A BFR93AR BFR93AW 2002/95/EC 2002/96/EC OT-23 OT-323 OT-23

    A1489 TRANSISTOR

    Abstract: No abstract text available
    Text: BFR93A/BFR93AR/BFR93AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure


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    PDF BFR93A/BFR93AR/BFR93AW BFR93A BFR93AR BFR93AW D-74025 20-Jan-99 A1489 TRANSISTOR

    BFR93AW

    Abstract: spice gummel Low Distortion Amplifiers AN077 transistor marking R2s BCR108W TS-104 marking R2s
    Text: BFR93AW NPN Silicon RF Transistor • For low distortion amplifiers and oscillators up to 2 GHz at collector currents from 3 2 1 5 mA to 30 mA • Pb-free RoHS compliant package • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!


    Original
    PDF BFR93AW OT323 BFR93AW spice gummel Low Distortion Amplifiers AN077 transistor marking R2s BCR108W TS-104 marking R2s

    BFR93A

    Abstract: BFR93AW MBG207
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR93AW NPN 5 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 18 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEATURES DESCRIPTION • High power gain


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    PDF BFR93AW OT323 BFR93AW BFR93A. R77/02/pp14 BFR93A MBG207

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFR93AW NPN 5 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 18 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEATURES DESCRIPTION • High power gain Silicon NPN transistor encapsulated


    Original
    PDF BFR93AW OT323 BFR93AW BFR93A. R77/02/pp14

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR93AW NPN 5 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 18 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEATURES DESCRIPTION • High power gain


    Original
    PDF BFR93AW OT323 BFR93A. BFR93AW MBC870 R77/02/pp14 771-BFR93AW-T/R

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEA TUR ES D ES C R IPTIO N • High power gain Silicon NPN transistor encapsulated • Gold metallization ensures excellent reliability in a plastic SO T323 S-mini package.


    OCR Scan
    PDF BFR93AW BFR93A. MBC870 711062b 7110flEb

    BFR93AW

    Abstract: MBG204 marking G SOT323 Transistor BFR93A
    Text: Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEATURES DESCRIPTION • High power gain Silicon NPN transistor encapsulated in a plastic SOT323 S-mini package. The BFR93AW uses the same crystal as the SOT23 version, BFR93A.


    OCR Scan
    PDF BFR93AW OT323 BFR93AW BFR93A. 711002b 711062b MBG204 marking G SOT323 Transistor BFR93A

    BFR93AW

    Abstract: No abstract text available
    Text: Temic BFR93AW S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications Wide band amplifier up to GHz range. Features • • High power gain High transition frequency •


    OCR Scan
    PDF BFR93AW D-74025 -Nov-97 BFR93AW

    SOT323

    Abstract: BFR93AW BFR93A
    Text: bbsa'ìai D D B s n ? IAPX tis Philips Semiconductors Preliminary specification BFR93AW NPN 6 GHz wideband transistor PH ILI PS/DISCRETE FEATURES PINNING DESCRIPTION PIN • High power gain • Low noise figure • Gold metallization ensures excellent reliability


    OCR Scan
    PDF BFR93AW OT323 OT323 BFR93AW BFR93A. OT323. SOT323 BFR93A

    4000 npn

    Abstract: 122e
    Text: 56 RF/Microwave Devices RF Wideband Transistors Type No. BFQ54T BFQ63 BFQ65 BFQ66 BFQ67 BFQ67W BFQ68 BFQ108 BFQ135 BFQ136 BFQ149 BFQ270 BFQ621 BFQ741 BFR53 BFR90 BFR90A BFR91 BFR91A BFR92 BFR92A BFR92AW BFR93 BFR93A BFR93AW BFR94A BFR95 BFR96 BFR96S BFR106


    OCR Scan
    PDF BFQ54T BFQ63 BFQ65 BFQ66 BFQ67 BFQ67W BFQ68 BFQ108 BFQ135 BFQ136 4000 npn 122e

    Untitled

    Abstract: No abstract text available
    Text: bbS3T31 D D 2 S n ? ^IS • APX Preliminary specification Philips Semiconductors BFR93AW NPN 6 GHz wideband transistor N AMER PHIL IPS /DISCRETE FEATURES b?E D PINNING Ji_ H DESCRIPTION PIN • High power gain • Low noise figure • Gold metallization ensures


    OCR Scan
    PDF bbS3T31 BFR93AW OT323 OT323 BFR93AW BFR93A. OT323.