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    TRANSISTOR PNP 3015 Search Results

    TRANSISTOR PNP 3015 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096EHVX Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    TRANSISTOR PNP 3015 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bc307

    Abstract: BC309 BC308
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC307/308/309 TRANSISTOR PNP TO-92 FEATURES Amplifier dissipation NPN Silicon 1. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2. BASE Symbol Parameter


    Original     		PDF BC307/308/309 BC307 BC308/309 -10mA, -100mA, bc307 BC309 BC308

    2N6109

    Abstract: No abstract text available
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6109 DESCRIPTION •DC Current Gain: hFE = 30-150@ IC= -2.5A ·Collector-Emitter Sustaining Voltage: VCEO SUS = -50V(Min) APPLICATIONS ·Designed for use in general-purpose amplifier and


    Original     		PDF 2N6109 2N6109

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC307/308/309 TRANSISTOR PNP TO-92 FEATURES Amplifier dissipation NPN Silicon 1. COLLECTOR 2. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. EMITTER Symbol


    Original     		PDF BC307/308/309 BC307 BC308/309 -55-150cy -10mA, -100mA,

    bc308

    Abstract: BC307 BC309
    Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.haorm.cn BC307/308/309 TRANSISTOR PNP TO-92 FEATURES Amplifier dissipation NPN Silicon 1. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2. BASE Symbol


    Original     		PDF BC307/308/309 BC307 BC308/309 -10mA, -100mA, bc308 BC307 BC309

    2N610

    Abstract: 2N6107 2N6292
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6107 DESCRIPTION •DC Current Gain: hFE = 30-150@ IC= -2A ·Collector-Emitter Sustaining Voltage: VCEO SUS = -70V(Min) ·Complement to Type 2N6292 APPLICATIONS ·Designed for use in general-purpose amplifier and


    Original     		PDF 2N6107 2N6292 2N610 2N6107 2N6292

    2N5415

    Abstract: FT 5415 transistor 2n 2N5416
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON HIGH VOLTAGE TRANSISTOR 2N 5415, 16 TO-39 Metal Can Package High Speed Switching and Linear amplifier Appliances in Military, Industrial and Commercial Equipment.


    Original     		PDF 2N5415 2N5416 C-120 2N5415, 16Rev300701 2N5415 FT 5415 transistor 2n 2N5416

    2N6107

    Abstract: No abstract text available
    Text: SILICON PLASTIC POWER TRANSISTOR PNP 2N6107 7A 40W Technical Data …designed for use in general-purpose switching and amplifier applications. F DC Current Gain - h FE = 30-150 @ IC = 2.0Adc F Collector-Emitter Sustaining Voltage – VCEO sus = 70 Vdc (Min)


    Original     		PDF 2N6107 O-220 50kHz] 2N6107

    2N5415

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON HIGH VOLTAGE TRANSISTOR 2N 5415, 16 TO-39 Metal Can Package High Speed Switching and Linear amplifier Appliances in Military, Industrial and Commercial Equipment.


    Original     		PDF 2N5415 2N5416 C-120 2N5415, 16Rev300701 2N5415

    transistor pnp 3015

    Abstract: EC1808TBOP EC1808NPCP EC1808PPCP EC1808NPOP
    Text: Proximity Sensors Capacitive Thermoplastic Polyester Housing Types EC, M18, M30, Cable • Thermoplastic polyester housing, cylindrical • Diameter: M18, M30 • Adjustable sensing distance • Power supply: 10 to 40 VDC 20 to 250 VAC • Output: Transistor NPN or PNP, make or


    Original     		PDF

    transistor 2n

    Abstract: 2N5415 2N5416 2N 5415
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON HIGH VOLTAGE TRANSISTOR 2N 5415, 16 TO-39 Metal Can Package High Speed Switching and Linear amplifier Appliances in Military, Industrial and Commercial Equipment.


    Original     		PDF 2N5415 2N5416 C-120 2N5415, 16Rev300701 transistor 2n 2N5415 2N5416 2N 5415

    transistor pnp 3015

    Abstract: 3015 nnap EC3015TBOP 3015 TRANSISTOR GEC-30 tbcp
    Text: Proximity Sensors Capacitive Thermoplastic Polyester Housing Types EC, M18, M30, Plug • Thermoplastic polyester housing, cylindrical • Diameter: M18, M30 • Sensing distance: 8 and 15 mm • Power supply: 10 to 40 VDC 20 to 250 VAC • Output: Transistor NPN/PNP, make and break switching


    Original     		PDF

    2N5415

    Abstract: 2N5416 transistor 2n
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON HIGH VOLTAGE TRANSISTOR 2N 5415, 16 TO-39 Metal Can Package High Speed Switching and Linear amplifier Appliances in Military, Industrial and Commercial Equipment. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


    Original     		PDF ISO/TS16949 2N5415 2N5416 C-120 2N5415, 16Rev300701 2N5415 2N5416 transistor 2n

    transistor pnp 3015

    Abstract: EC3015TBOP nncp 3015 nnap EC3015NNAP EC3015PNAP EC1808NPOP EC3010NNOP sv relays PPCP
    Text: Proximity Sensors Capacitive Thermoplastic Polyester Housing Types EC, M 18, M 30, Cable • Thermoplastic polyester housing, cylindrical • Diameter: M 18, M 30 • Adjustable sensing distance • Power supply: 10 to 40 VDC 20 to 250 VAC • Output: Transistor NPN or PNP, make or


    Original     		PDF

    transistor pnp 3015

    Abstract: transistor 1202 1204 transistor 1202 transistor ei 48 f npn 3010 NPOS EI 33 npn transistors,pnp transistors PPOSS1
    Text: Näherungsschalter Induktiv Rostfreies Stahlgehäuse Typen EI, M 12, M 18, M 30 • Rostfreies Stahlgehäuse, zylindrisch • Durchmesser: M 12, M 18, M 30 • Kurzbauform oder Langbauform • Schaltabstand: 2 - 15 mm • Betriebsspannung: 10 - 40 VDC • Ausgang: NPN/PNP-Transistor, Schliesser und Öffner


    Original     		PDF

    PPOPL EI 3015

    Abstract: transistor pnp 3015 EI3015PPOPL transistor b 1202 1204 transistor transistor 1202 ppcpl PPOPL1 ei 48 f SEI-1202
    Text: Proximity Sensors Inductive Thermoplastic Polyester Housing Types EI, DC, M12, M18, M30 • Euronorm thermoplastic polyester housing, cylindrical • Diameter: M12, M18, M30. • Sensing distance: 2 to 15 mm • Power supply: 10 to 40 VDC 20 to 250 VAC • Output: Transistor NPN/PNP, make or break switching


    Original     		PDF

    1202 transistor

    Abstract: transistor 1202 transistor pnp 3015 3015 TRANSISTOR EI1808NPOSS 1805PPOSS EI1202PPOSS EI1808PPOSS PPOSS EI1202NPOSS
    Text: Proximity Sensors Inductive Stainless Steel Housing Types EI, DC, M 12, M 18, M 30 • Stainless steel housing, cylindrical • Diameter: M 12, M 18, M 30 • Short or long versions • Sensing distance: 2 to 15 mm • Power supply: 10 to 40 VDC • Output: Transistor NPN/PNP, make or break switching


    Original     		PDF 120travel) 1202 transistor transistor 1202 transistor pnp 3015 3015 TRANSISTOR EI1808NPOSS 1805PPOSS EI1202PPOSS EI1808PPOSS PPOSS EI1202NPOSS

    SL 100 NPN Transistor

    Abstract: 1202 transistor transistor b 1202 1204 transistor Transistor 1204 1204 PPOSS transistor pnp 3015 Ei Information equivalent of SL 100 NPN Transistor
    Text: Proximity Sensors Inductive Stainless Steel Housing Types EI, DC, M 12, M 18, M 30 • Stainless steel housing, cylindrical • Diameter: M 12, M 18, M 30 • Short or long versions • Sensing distance: 2 to 15 mm • Power supply: 10 to 40 VDC • Output: Transistor NPN/PNP, make or break switching


    Original     		PDF M12x1 SL 100 NPN Transistor 1202 transistor transistor b 1202 1204 transistor Transistor 1204 1204 PPOSS transistor pnp 3015 Ei Information equivalent of SL 100 NPN Transistor

    741 IC

    Abstract: 2N5093 741i IC 741 to 2N5415 2N3868 2N4930 2N4931 2N5091 2N5096
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 PNP TO-5 » I 1 sus VOLTS Ic (max) AMPS 2N3867 40 3 >[email protected]/3 [email protected]/.25 6 60 2N3868 60 3 >[email protected]/3 [email protected]/.25 6 60 2N4930 200 .05 [email protected]/10 [email protected]/.001 5 10* 2N4931 250 .05


    OCR Scan     		PDF O-39/TO-5 2N3867 2N3868 2N4930 2N4931 2N5091 2N5093 2N5094 2N5096 2N5149 741 IC 741i IC 741 to 2N5415

    2N5415

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 PNP TO-5 tr 1 V ceo Ic hFE@ V VcE VcE sat (sus) VOLTS (max) AMPS (min/max @ A/V) @ IC/IB (V @ A/A) 2N3867 40 3 >[email protected]/3 2N3868 60 3 2N4930 200 2N4931 p * rD Ìt WATTS (MHz) [email protected]/.25


    OCR Scan     		PDF O-39/TO-5 2N3867 2N3868 2N4930 2N4931 2N5094 2N5149 2N5153 2N5415

    Transistor 2N5093

    Abstract: 2N5091 7 amps pnp transistor 2N5416A 2N5096 "PNP Transistor" 2N5093 2N5094 2N5149 2N5151
    Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 Jff /1 PNP TO-5 Jff Uf V eto sus VOLTS Ic ^FE IC/ VCE DEVICE TYPE (max) (min/max AMPS @ A/V) 2N3867A 40 3 >[email protected]/3 2N3868A 60 3 2N5091 300 2N5093 V CE(sat) @ I c/I b (V @ A/A)


    OCR Scan     		PDF O-39/TO-5 2N3867A 2N3868A 2N5091 2N5093 2N5094 2N5096 2N5149 2N5151 2N5153 Transistor 2N5093 7 amps pnp transistor 2N5416A "PNP Transistor"

    406j transistor

    Abstract: 2N6277 stc TO-59 Package 2n6341 stc 2N6277 JANTX 2N3418 NPN 25 Amps POWER TRANSISTOR to63 2N6277 JANTXV 2n5685 stc 2N3846
    Text: 27 Katrina Road Chelmsford, MA 01824 Tel: 978 256-3321 Fax: (978)250-1046 Web: www.stcsemi.com A PO W ERHO USE STC is one o f few remaining manufacturers o f NPN and PNP power transistors and Darlingtons. We maintain QML status on over 135 bipolar power transistor and


    OCR Scan     		PDF 14-PtN 406j transistor 2N6277 stc TO-59 Package 2n6341 stc 2N6277 JANTX 2N3418 NPN 25 Amps POWER TRANSISTOR to63 2N6277 JANTXV 2n5685 stc 2N3846

    2N4927

    Abstract: 2N5415
    Text: General Transistor Corporation PNP Power Transistors CASE T O - 5 / T O -3 9 IC M AX = 0 .0 5 -5 A Vceo(SUS) = 4 0 -4 5 0 V NPN Typ» No. cowptomiot 2N3743 2N3867 2N3868 2N4930 2N3742 2N4926 VCEO (tua) M le (max) (Al hre@leVct (m(n-ma> A/V) VCE<SAT) ® Ic /Ib


    OCR Scan     		PDF 2N3743 2N3867 2N3868 2N4930 2N3742 2N4926 2N1483 2N1484 2N1495 2N1486 2N4927 2N5415

    MH 5450 S

    Abstract: BF 212 transistor transistor 2n 5447 293 2n 2n5449 2N5448 2N5447 K 5448
    Text: *2N 5447 *2N 5448 'NP SILICON TRANSISTOR, EPITAXIAL PLANAR RANSISTOR PNP S ILIC IU M . PLAN A R E P IT A X IA L tempi, of 2N 5449 and 2N 5450 4 ! Preferred device Dispositif recommandé Driver stages and power stages in AF amplifiers Etages " D rivers" e t de puissance p o u r


    OCR Scan     		PDF CB-76 h21IE* 300MS MH 5450 S BF 212 transistor transistor 2n 5447 293 2n 2n5449 2N5448 2N5447 K 5448

    2N3055

    Abstract: 2n5471 TRANSISTOR 2Sc 2525 2N1487 2N1488 2N1490 2N1702 2N3442 2N3445 MJ2955
    Text: General Transistor Corporation CASE lc M A X V ceo (SUS) TO-3 = 2-50A = 35-500V NPN Power Transistors PNP VCEO M 1C (max) (A) hFE@ic/Vc* (min-m« @ A/V) VCE(SAT) @IC/IB (V @ A/A) V8E @IC/VCE (V @ A/V) 40 55 40 55 6 6 6 6 15-45 @ 1.5/4 15-45 @ 1.5/4 25-75 @1.5/4


    OCR Scan     		PDF 5-500V 2N1487 2N1488 2N14S9 2N1490 2N6677 2N6678 2N6686 2N6667 2N3055 2n5471 TRANSISTOR 2Sc 2525 2N1487 2N1488 2N1490 2N1702 2N3442 2N3445 MJ2955