MARKING fzt
Abstract: MARKING fzt 605 fzt 605 FZT704 FZT705 DSA003714
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT705 ISSUE 2 - OCTOBER 1995 FEATURES * 2A CONTINUOUS CURRENT * FAST SWITCHING * GUARANTEED HFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE FZT 605 PART MARKING DETAIL FZT705 C E B ABSOLUTE MAXIMUM RATINGS.
|
Original
|
PDF
|
OT223
FZT705
100ms
FZT704
MARKING fzt
MARKING fzt 605
fzt 605
FZT704
FZT705
DSA003714
|
FZT705
Abstract: MARKING fzt FZT704 DSA003714
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT704 ISSUE 2 - SEPTEMBER 1995 FEATURES * 2A CONTINUOUS CURRENT * FAST SWITCHING * GUARANTEED hFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE FZT 604 PART MARKING DETAIL FZT704 C E B ABSOLUTE MAXIMUM RATINGS.
|
Original
|
PDF
|
OT223
FZT704
100ms
FZT705
FZT705
MARKING fzt
FZT704
DSA003714
|
MMBT3904 jiangsu
Abstract: MMBT3904 MMBT3906 MMBT3906 SOT-23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 SOT–23 TRANSISTOR PNP FEATURES z Complementary Type The NPN Transistor MMBT3904 is Recommended z Epitaxial Planar Die Construction MARKING: 2A 1. BASE 2. EMITTER
|
Original
|
PDF
|
OT-23
MMBT3906
MMBT3904
MMBT3904 jiangsu
MMBT3906
MMBT3906 SOT-23
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 TRANSISTOR PNP SOT-23 FEATURES z As complementary type the NPN transistor MMBT3904 is recommended z Epitaxial planar die construction 1. BASE MARKING: 2A 2. EMITTER
|
Original
|
PDF
|
OT-23
MMBT3906
OT-23
MMBT3904
-10mA
-50mA
-100mA
-50mA,
-10mA
|
STB1277L
Abstract: Transistor TRANSISTOR stb1277 STB1277 STD1862L STD1862
Text: STB1277L Semiconductor PNP Silicon Transistor Description • Audio power amplifier • High current application Features • High current : IC=-2A • Complementary pair with STD1862L Ordering Information Type NO. STB1277L Marking STB1277 Outline Dimensions
|
Original
|
PDF
|
STB1277L
STD1862L
STB1277
O-92L
KST-I006-001
STB1277L
Transistor
TRANSISTOR stb1277
STB1277
STD1862L
STD1862
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted
|
Original
|
PDF
|
OT-23
MMBT3906LT1
MMBT3904LT1
-10mA
-50mA
100MHz
-10mA
|
STD1862
Abstract: Transistor std1862 TRANSISTOR STB1277 TRANSISTOR stb1277
Text: STD1862 Semiconductor NPN Silicon Transistor Descriptions • Audio power amplifier • High current application Features • High current : IC=2A • Complementary pair with STB1277 Ordering Information Type NO. Marking STD1862 STD1862 Package Code TO-92
|
Original
|
PDF
|
STD1862
STB1277
KST-9036-001
500mA
STD1862
Transistor
std1862 TRANSISTOR
STB1277
TRANSISTOR stb1277
|
STB1277
Abstract: Transistor TRANSISTOR stb1277 STD1862
Text: STB1277 Semiconductor PNP Silicon Transistor Description • Audio power amplifier • High current application Features • High current : IC=-2A • Complementary pair with STD1862 Ordering Information Type NO. Marking STB1277 STB1277 Package Code TO-92
|
Original
|
PDF
|
STB1277
STD1862
KST-9035-002
STB1277
Transistor
TRANSISTOR stb1277
STD1862
|
Untitled
Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A
|
Original
|
PDF
|
OT-23
CMBT3906
C-120
|
SMD TRANSISTOR MARKING 2A pnp
Abstract: CMBT3906
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration
|
Original
|
PDF
|
OT-23
CMBT3906
C-120
SMD TRANSISTOR MARKING 2A pnp
CMBT3906
|
STD1862L
Abstract: Transistor STD1862 STB1277 transistor cb 170 STB1277L
Text: STD1862L Semiconductor NPN Silicon Transistor Descriptions • Audio power amplifier • High current application Features • High current : IC=2A • Complementary pair with STB1277L Ordering Information Type NO. Marking STD1862L STD1862 Package Code TO-92L
|
Original
|
PDF
|
STD1862L
STB1277L
STD1862
O-92L
KST-I007-000
500mA
STD1862L
Transistor
STD1862
STB1277
transistor cb 170
STB1277L
|
3402 transistor
Abstract: STA353 STC352 003A MARKING TRANSISTOR ic 2501
Text: STC352 Semiconductor NPN Silicon Transistor Descriptions • High current application • Audio power amplifier Features • High current : IC = 2A • Complementary pair with STA353 Ordering Information Type NO. Marking STC352 STC352 Package Code MPT Outline Dimensions
|
Original
|
PDF
|
STC352
STA353
KST-B001-000
500mA
3402 transistor
STA353
STC352
003A MARKING TRANSISTOR
ic 2501
|
KST3906
Abstract: WH*s
Text: KST3906 PNP Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 2A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage
|
Original
|
PDF
|
KST3906
OT-23
KST3906
WH*s
|
Untitled
Abstract: No abstract text available
Text: KST3906 PNP Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 2A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage
|
Original
|
PDF
|
KST3906
OT-23
|
|
|
Untitled
Abstract: No abstract text available
Text: FMMT549 PNP Low Saturation Transistor Features • ThIs device is designed with high current gain and low saturation voltage with collector currents up to 2A continuous. • Sourced from process PB. 3 2 SuperSOT-23 1 Marking : 549 1. Base 2. Emitter 3. Collector
|
Original
|
PDF
|
FMMT549
SuperSOT-23
|
Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transisto r Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration
|
Original
|
PDF
|
OT-23
CMBT3906
C-120
|
3906
Abstract: 3906 PNP pnp 3906 transistor 3906 transistor pnp 3906 semiconductor 3906 transistor 3906 data sheet transistor c 3906 2A 3906
Text: PNP Silicon Switching Transistor SXT 3906 High current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 3906 2A Q68000-A8397 B SOT-89 C E Maximum Ratings
|
Original
|
PDF
|
Q68000-A8397
OT-89
3906
3906 PNP
pnp 3906
transistor 3906
transistor pnp 3906
semiconductor 3906
transistor 3906 data sheet
transistor c 3906
2A 3906
|
MMBT3906 UTC
Abstract: No abstract text available
Text: UTC MMBT3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =350mW *Complementary to MMBT3904 2 1 MARKING 2A 3 SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
|
Original
|
PDF
|
MMBT3906
350mW
MMBT3904
OT-23
QW-R206-013
MMBT3906 UTC
|
Untitled
Abstract: No abstract text available
Text: UTC MMBT3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =350mW *Complementary to MMBT3904 2 1 MARKING 3 2A SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
|
Original
|
PDF
|
MMBT3906
350mW
MMBT3904
OT-23
QW-R206-013
-10mA
-50mA
100MHz
|
PXT3906
Abstract: PXT3904
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89 Plastic-Encapsulate Transistors SOT-89 PXT3906 TRANSISTOR PNP 1. BASE FEATURES z Compliment to PXT3904 z Low current z Low voltage 1 2. COLLECTOR 2 3 3. EMITTER MARKING: 2A MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
|
Original
|
PDF
|
OT-89
OT-89
PXT3906
PXT3904
-10mA
-50mA
100MHz
10Hz-15
-10mA
PXT3906
PXT3904
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L PXT3906 TRANSISTOR PNP 1. BASE FEATURES z Compliment to PXT3904 z Low current z Low voltage 2. COLLECTOR 1 2 3 3. EMITTER MARKING: 2A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
|
Original
|
PDF
|
OT-89-3L
OT-89-3L
PXT3906
PXT3904
-100mA
-10mA
-50mA
|
l05a
Abstract: 6k SOT223 marking FZT705
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER DARUNGTON TRANSISTOR ISSUE 2 - OCTOBER 1995 FEATURES * 2A CONTINUOUS CURRENT * * FAST SWITCHING GUARANTEED HFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE - FZT605 PART MARKING DETAIL - FZT705 ABSOLUTE MAXIMUM RATINGS. PARAMETER
|
OCR Scan
|
PDF
|
OT223
FZT605
FZT705
-100mA
-10mA*
-100hA
-120V
FZT705
FZT704
55-c\
l05a
6k SOT223
marking FZT705
|
CMBT3906
Abstract: No abstract text available
Text: CMBT3906 SILICON EPITAXIAL TRANSISTOR P -N -P transistor Marking CMBT3906 ; 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1,02_ 0.89 2.00 1.80 0.60 0.40 ABSOLUTE MAXIMUM RATINGS
|
OCR Scan
|
PDF
|
CMBT3906
CMBT3906
|
3906
Abstract: marking 2A transistor 3906 transistor marking code 7C
Text: SIEMENS PNP Silicon Switching Transistor SXT 3906 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 3906 2A Q68000-A8397 B SOT-89 C E Maximum Ratings
|
OCR Scan
|
PDF
|
Q68000-A8397
OT-89
3906
marking 2A
transistor 3906
transistor marking code 7C
|
