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    TRANSISTOR I35 Search Results

    TRANSISTOR I35 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR I35 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HCPL-4503V

    Abstract: ISOLATION PULSE TRANSFORMER 4503
    Text: HCPL4503M High Speed Transistor Optocouplers Features Description • VISO = 5kV RMS is standard for all devices ■ High speed – 1MBit/s The HCPL4503M optocoupler consists of an AlGaAs LED optically coupled to a high speed photodetector transistor. ■ Superior CMR, CMH = 50kV/ms typical ;


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    PDF HCPL4503M 50kV/ms HCPL-4503V ISOLATION PULSE TRANSFORMER 4503

    FOD250L

    Abstract: FOD050L FOD053L FOD250LS FOD250LSD FOD250LT 64RM
    Text: FOD050L, FOD250L: Single Channel FOD053L: Dual Channel LVTTL/LVCMOS 3.3V High Speed Transistor Optocouplers Features Description • Low power consumption The FOD250L, FOD050L and FOD053L optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor. These devices are specified for operation at a 3.3V supply voltage.


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    PDF FOD050L, FOD250L: FOD053L: FOD250L, FOD050L FOD053L FOD250L) FOD050L) FOD053L) E90700) FOD250L FOD250LS FOD250LSD FOD250LT 64RM

    b1009 transistor

    Abstract: B1009 ba656 ba9700-series BA6566
    Text: Regulator ICs Switching regulator for DC-DC converters BA9700A/BA9700AF/BA97OOAFV BA9700A, BA9700AF and BA9700AFV are switching regulators that use a pulse width modulation PWM system. They use a transistor switch to stabilize the output voltage. By the use of the transistor, power loss is decreased, fluctnation efficiency is improved, and the circuit is made more


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    PDF BA9700A/BA9700AF/BA97OOAFV BA9700A, BA9700AF BA9700AFV 470kHz) BU8874lBU8874F BU8874 BU8874F 03iOl b1009 transistor B1009 ba656 ba9700-series BA6566

    6N136

    Abstract: 6N135 HCPL2531 270 Phototransistor HCPL2530 hcpl2531 datasheet hcpl4502 HCPL2503
    Text: Single-Channel: 6N135, 6N136, HCPL2503, HCPL4502 Dual-Channel: HCPL2530, HCPL2531 High Speed Transistor Optocouplers Features Description • High speed –1 MBit/s The HCPL4502, HCPL2503, 6N135, 6N136, HCPL2530 and HCPL2531 optocouplers consist of an AlGaAs


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    PDF 6N135, 6N136, HCPL2503, HCPL4502 HCPL2530, HCPL2531 HCPL4502, 6N136 6N135 HCPL2531 270 Phototransistor HCPL2530 hcpl2531 datasheet hcpl4502 HCPL2503

    HCPL2531

    Abstract: 6N135 HCPL2530 HCPL-2531 6N136 HCPL2503 HCPL4502
    Text: Single-Channel: 6N135, 6N136, HCPL2503, HCPL4502 Dual-Channel: HCPL2530, HCPL2531 High Speed Transistor Optocouplers Features Description • High speed –1 MBit/s The HCPL4502, HCPL2503, 6N135, 6N136, HCPL2530 and HCPL2531 optocouplers consist of an AlGaAs


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    PDF 6N135, 6N136, HCPL2503, HCPL4502 HCPL2530, HCPL2531 HCPL4502, HCPL2531 6N135 HCPL2530 HCPL-2531 6N136 HCPL2503 HCPL4502

    HCPL4502

    Abstract: 6n135
    Text: Single-Channel: 6N135, 6N136, HCPL2503, HCPL4502 Dual-Channel: HCPL2530, HCPL2531 High Speed Transistor Optocouplers Features Description • High speed –1 MBit/s The HCPL4502, HCPL2503, 6N135, 6N136, HCPL2530 and HCPL2531 optocouplers consist of an AlGaAs


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    PDF 6N135, 6N136, HCPL2503, HCPL4502 HCPL2530, HCPL2531 HCPL4502, HCPL4502 6n135

    BUK445

    Abstract: BUK445-500A BUK445-500B IE-04
    Text: N AMER PHI LI PS /DIS CR ETE 2SE D • ^53131 0020410 =1 ■ BUK445-500A BUK445-500B PowerMOS transistor QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


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    PDF BUK445-500A BUK445-500B BUK445 -500A -500B BUK445-500A BUK445-500B IE-04

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    ETN35-O3O

    Abstract: L63A
    Text: ETI\I35-O3O 300a • : Outline Drawings POWER TRANSISTOR MODULE ’ Features High Current • h F E ^ ^ v ,^ High DC Current Gain • Non Insulated Type 83 -iVVr'4 ‘ Applications • High Power Switching " j T - 's 'f Uninterruptible Power Supply • DC ^ —


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    PDF ETI\I35-O3O I95t/R89) ETN35-O3O L63A

    Untitled

    Abstract: No abstract text available
    Text: TIP132 TIP135 TIP137 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • STMicroelectronics PREFERRED SALESTYPES APPLICATION . LINEARAND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The TIP132 is a silicon Epitaxial-Base NPN power transistor in monolithic


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    PDF TIP132 TIP135 TIP137 TIP132 O-220 O-220

    7901

    Abstract: 2N7222 IQR 2400 IRFM440 IRFM440D
    Text: Data Sheet No. PD-9.492C INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE RATED AND dv/dt RATED TRANSISTOR N-CHANNEL IRFM440 SN7SSS JANTXSN7SSS JA NTXV2N7222 [REF: MIL-S-1S500/S9B] Product Summary 500 Volt, 0.85 Ohm HEXFET The HEXFET technology is the key to International


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    PDF IRFM440 MIL-S-1S500/S9B] IRFM440D IRFM440U O-254 -S-19S00 7901 2N7222 IQR 2400 IRFM440

    i354

    Abstract: 2N7222 IRFM440 IRFM440D i-354
    Text: Data Sheet No. PD-9.492C INTERNATIONAL RECTIFIER I& R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM440 SN7SSS JANTX2N7222 JANTXV2N7222 N-CHANNEL [REF: MIL-S-1S500/596] Product Summary 500 Volt, 0.85 Ohm HEXFET The HEXFET® technology is the key to International


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    PDF IRFM440 MIL-S-1S500/596] IRFM440D IRFM440U O-254 MIL-S-19B00 14A551455 i354 2N7222 IRFM440 i-354

    Untitled

    Abstract: No abstract text available
    Text: O rdering number: EN 550E J SAW O N 0.550 E _ 2 S D 8 7 9 NPN Epitaxial Planar Silicon Transistor 1.5 V and 3 V Strobe Applications Features . In applications where two NiCd batteries are used to provide 2.4V, two 2SD879 transistors are used.


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    PDF 2SD879 750mW) 5137KI/3075KI/5244KI 2SD879 I350T

    2N7222

    Abstract: No abstract text available
    Text: Data Sheet No. PD-9.492C INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR ;n N-CHANNEL IRFM440 SN7SS8 JANTX8N7SS8 JANTXV8N7SSS [REF: MIL-S-10BOO/596] Product Summary 500 Volt, 0.85 Ohm HEXFET The HEXFET® technology is the key to International


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    PDF IRFM440 MIL-S-10BOO/596] IRFM440D IRFM440U O-254 MIL-S-19500 I-356 2N7222

    nsi 60 jg

    Abstract: VCBo-400V transiter CD 100 M6WA
    Text: ETI\I35-O3O 300a • : Outline D rawings POWER TRANSISTOR MODULE ’ F e a tu re s H igh C u rre n t • h F E ^ ^ v ,^ H igh DC C u rre n t Gain • Non Insulated T yp e 83 -iVVr'4 ‘ Applications • " jT - 's 'f H igh Pow er S w itc h in g U n in te rru p tib le Pow er S u p p ly


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    PDF ETN35-O3O nsi 60 jg VCBo-400V transiter CD 100 M6WA

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


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    2N7228 JANTX mosfet

    Abstract: 2N7228 JANTX IRFM450 IOR 235 IOR MOSFET 2N7228 JANTX mosfet data sheet 2N7228 JANTXV2N7228 I-362 I-361
    Text: Data Sheet No. PD-9.493E INTERNATIONAL RECTIFIER X & R REPETITIVE AVALANCHE RATED AND dv/dt RATED TRANSISTOR IRFM45Q S N 7 C E S N-CHANNEL JANTX2N722B JANTXV2N7228 REF: MIL-S-19500/59S] 500 Volt, 0.415 Ohm HEXFET Product Summary The HEXFET technology is the key to International


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    PDF IRFM450 JANTX2N722B JANTXV2N7228 MIL-S-1S500/592] IRFM450D IRFM450U O-254 MIL-S-19500 I-364 2N7228 JANTX mosfet 2N7228 JANTX IOR 235 IOR MOSFET 2N7228 JANTX mosfet data sheet 2N7228 JANTXV2N7228 I-362 I-361

    T3D DIODE

    Abstract: 2n7226 mosfet k 1357 T3D 76 T3D 40 DIODE 2N7228 JANTX T3D 65 diode T3D 53 diode t3d diode type T3D 83 DIODE
    Text: Data Sheet No. PD-9.493E INTERNATIONAL RECTIFIER l l O R l REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM450 SN72S8 JANTX2N7228 JANTXV2N7228 ;n N-CHANNEL [REF: MIL-S-135OO/502] 500 Volt, 0.415 Ohm HEXFET Product Summary The HEXFET® technology is the key to International


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    PDF IRFM450 MIL-S-1S500/592] irfm450d irfm450u O-254 Mll-S-19500 00n4S7 T3D DIODE 2n7226 mosfet k 1357 T3D 76 T3D 40 DIODE 2N7228 JANTX T3D 65 diode T3D 53 diode t3d diode type T3D 83 DIODE

    M104

    Abstract: T151 X390
    Text: ETN85-O5O 300a 3 . — : Outline Drawings ) V POWER TRANSISTOR MODULE : Featurés • 7 'J — 'J K f*3/K • ASO Including Free Wheeling Diode Excellent Safe Operating Area •mm Insulated Type • ff liÊ ! A p p lic a tio n s v T 's ? • • AC High Power Switching


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    PDF ETN85-O5O E82988 19S24# Cl95t/R89) M104 T151 X390

    2SD1210

    Abstract: No abstract text available
    Text: 2SD1210 2SD1210 NPNX fc°9 + i s T ' J l ' j f e '> lJ □ > ' y ~ NPN Silicon Epitaxial Darlington Transistor l > b >& % H ) Audio Frecluency Power Amplifier Low Speed High Current Switching Industrial Use x*ffl KWM/ P A C K A G E D IM E N S IO N S ¡» « / F E A T U R E S


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    PDF 2SD1210 OV-25 PWS350 2SD1210

    2SD1593

    Abstract: No abstract text available
    Text: 2SD1593 N P N i t ' ÿ + i ' T u f á is ' 3 > j^ m m NPN Silicon Epitaxial Transistor Audio Frequency Amplifier Industrial Use ^ ft/ FE A T U R E S CUBISI/ P A C K A G E DIMENSIONS offiSfííi;,±í/!Éí*7'v>> /i'W it-ii- F'^/ 'r-í-ti:, o i’í)Iifk ~C"Í~¡, hFK=800


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    PDF 2SD1593 1I13EIEE 2SD1593

    RT1P431C

    Abstract: RT1P431M RT1P431S RT1P431U RT1P431X
    Text: S e m ic o n d u c t o r T r a n s is to r R T 1 P 4 3 1 X S E R IE S Transistor WïUi Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DESCRIPTION HT1P431X is a o n e c h ip t r a n s is t o r UNIT mm DRAWING RT1P431U with b u ilt-in bias resistor.NPN type is RT1N431X


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    PDF RT1P431X RT1N431X RT1P431T2 RT1P431U RT1P431M RT1P431C RT1P431C RT1P431M RT1P431S