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    PWS350 Price and Stock

    Hammond Manufacturing PWS3502A115N4SS

    AIR/WATER HEAT EXCH. 6300W 115V
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    DigiKey PWS3502A115N4SS Bulk 1
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    Mouser Electronics PWS3502A115N4SS
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    Newark PWS3502A115N4SS Bulk 1
    • 1 $4843.78
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    RS PWS3502A115N4SS Bulk 1 Weeks 1
    • 1 $6125.65
    • 10 $5819.36
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    Onlinecomponents.com PWS3502A115N4SS
    • 1 $4702.32
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    Hammond Manufacturing PWS3502A230N4SS

    AIR/WATER HEAT EXCH. 6300W 230V4
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    DigiKey PWS3502A230N4SS Bulk 1
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    Mouser Electronics PWS3502A230N4SS
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    Newark PWS3502A230N4SS Bulk 1
    • 1 $4843.78
    • 10 $4757.2
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    RS PWS3502A230N4SS Bulk 1 Weeks 1
    • 1 $6125.65
    • 10 $5819.36
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    Onlinecomponents.com PWS3502A230N4SS
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    Hammond Manufacturing PWS3502A115N4LG

    AIR/WATER HEAT EXCH. 6300W 115V
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    DigiKey PWS3502A115N4LG Bulk 1
    • 1 $4195.15
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    Mouser Electronics PWS3502A115N4LG
    • 1 $4195.14
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    Newark PWS3502A115N4LG Bulk 1
    • 1 $4125.77
    • 10 $4052.02
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    RS PWS3502A115N4LG Bulk 4 Weeks 1
    • 1 $5217.6
    • 10 $4956.72
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    Onlinecomponents.com PWS3502A115N4LG
    • 1 $4005.26
    • 10 $3838.92
    • 100 $3838.92
    • 1000 $3838.92
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    Hammond Manufacturing PWS3502A230N4LG

    AIR/WATER HEAT EXCH. 6300W 230V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PWS3502A230N4LG Bulk 1
    • 1 $4195.15
    • 10 $4195.15
    • 100 $4195.15
    • 1000 $4195.15
    • 10000 $4195.15
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    Mouser Electronics PWS3502A230N4LG
    • 1 $4195.14
    • 10 $4195.14
    • 100 $4195.14
    • 1000 $4195.14
    • 10000 $4195.14
    Get Quote
    Newark PWS3502A230N4LG Bulk 1
    • 1 $4125.77
    • 10 $4052.02
    • 100 $4052.02
    • 1000 $4052.02
    • 10000 $4052.02
    Buy Now
    RS PWS3502A230N4LG Bulk 1 Weeks 1
    • 1 $5217.6
    • 10 $4956.72
    • 100 $4956.72
    • 1000 $4956.72
    • 10000 $4956.72
    Get Quote
    Onlinecomponents.com PWS3502A230N4LG
    • 1 $4005.26
    • 10 $3838.92
    • 100 $3838.92
    • 1000 $3838.92
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    PWS350 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Power supply ATX 350W p4

    Abstract: ATX 350W p4 atx 400 P4 p4 atx 400w Power supply ATX 400W p4 Power supply model ATX 300W p4 atx 400 power supply atx 400w p4 Power supply ATX 300W p4 Power supply model ATX 400W p4
    Text: AMC-262 Industrial Computing Platform Partner 6-slot Wallmount Chassis Full-size / Half-size Cards Supports Features Floppy Disk Drive x 1 6-slot Wallmount Chassis Supports 6-slot ISA/PICMG Bus Passive Backplanes Supports Standard PS2 Power Supply Up To 400W


    Original
    PDF AMC-262 BP-206SS-P4-A11 HSB-835P HSB-811P 600MHz) 900MHz) AMC-262-W Power supply ATX 350W p4 ATX 350W p4 atx 400 P4 p4 atx 400w Power supply ATX 400W p4 Power supply model ATX 300W p4 atx 400 power supply atx 400w p4 Power supply ATX 300W p4 Power supply model ATX 400W p4

    2SC41

    Abstract: 4181A 2SC4181 2SC4181A
    Text: NEC r -t S • is — f-~ 2SC41 81,41 81A =7> i> 7. 3 r / V Î7 ï ï t Silicon Transistors ^ NPN x t 4# £ W [ U ^ { Ì I mm » O i ^ h p £ "C "^- o 2 .1 + 0 .1 hFE = 1000—3200 @ V Ce = 1.25 + 0.1 5.0 V, Ic = 1.0 mA o iâ V CE(sat)T"i_ o VCE(sat) = 0.07 V TYP. @Ic /I b = 50 m A /5 .0 mA


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    PDF 2SC41 2SC4181) 2SC4181A) 2SC4181 2SC4181A Vcb-50 9SS2S992S2SS22S292S92 4181A 2SC4181A

    2sc3478a

    Abstract: 2SA1376 PA33 A1376
    Text: SEC Ì ? f / \ Silicon Transistors f 7 2 S A 1 3 7 6 , 1 3 7 6 A PNP Epitaxial Transistor High Voltage Amplifier PACKAGE DIMENSIONS ^/FEA TU RES Unit : mm o ftS E tt. V ceo : ~180 V/ —200 V (2SA1376/2SA1376A) O h FE « U t O ') — T / î H ^ f é O 2 S C 3 4 78/ 2 S C 3478A t


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    PDF 2SA1376, 2SA1376A 2SA1376/2SA1376A) 2sc3478a 2SA1376 PA33 A1376

    transistor P33

    Abstract: KSC2749 KSC2690 KSC2690A 3a npn to126 transistor
    Text: SAMSUNG SEMICONDUCTOR INC KSC2690/2690A 14E D j T 'im m a 0007S7G T NPN EPITAXIAL SILICON TRANSISTOR T - 3 3 - o J AUDIO FREQUENCY, HIGH FREQUENCY POWER AMPLIFIER • Complement to KSA1220/KSA1220A ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic i Symbol ' Rating


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    PDF 0007S70 KSC2690/2690A KSA1220fKSA1220A KSC2690 KSC2690A O-126 T-33-\2> Q00757S transistor P33 KSC2749 KSC2690A 3a npn to126 transistor

    11B2 zener diode

    Abstract: PA1428H uPA1428H LTNH PWg300 PA142SH c1986
    Text: NEC ELECTRONICS INC Tfl DÊJ b427SSS 0 0 n i 3 1 1 T ^S'^ZS ¿/ P A 1 4 2 8 H NPN SILICON E P I T A X I_AL.'. . P O W E R LOW S P E E D T R A N S I S TOR .ARRA SWITCHING DARLINGTON DESCRIPTION • The ¡i PA1428H is an array of four darlington power tra n s isto rs . I t is


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    PDF b427SSS uPA1428H 001c1134 11B2 zener diode PA1428H LTNH PWg300 PA142SH c1986

    11B2 zener diode

    Abstract: zener 11B2
    Text: N E C E L E C T R O N I C S INC Tfl D Ë J b427SSS 0 0 n i 3 1 T POWER NPN T ' TRANSISTOR ARRAY ¿¿PA1428H S I L I C O N E P I T A X I_A L . . . P 0 WE R T R A N S I S T O R .A R R A > LOW S P E E D S W I T C H I N G D A R L I N G T O N DESCRIPTION ‘


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    PDF b427SSS PA1428H /iPA142SH DIMENS10NS 11III 11B2 zener diode zener 11B2

    ci 3060 pt

    Abstract: 2SA1627 transistor 2SA1627 2SA162
    Text: SEC '> ' =1 > Silicon Transistor m + T fS rtX 2SA1627 n > b=7 > '^ 7.9 PN P = PNP Silicon Triple Diffused T ran sisto r High Speed High V oltag e Switching m # -Ç -fô lü IíE T - fo o V c e o = — 600 ^ mm) 7 .0 MAX. V o x > f 7 f v 7 X h°— K * si t v ^


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    PDF 2SA1627 PWS10 ci 3060 pt 2SA1627 transistor 2SA1627 2SA162

    IC MAX 797

    Abstract: 2SD608 2SB628 S3V77 251C
    Text: 2SD608/2SB628 2SD 608/2SB 628 N PN /PN P x >J n V h ÿ V ' / X ? / N P N / P N P SILICON EPIT A X IA L TRANSISTOR y ^ " ffl/A u d io Frequency Power / i & i Ê M Z 'i "j 8 S/FEA TU RES • *Hf50/PACKAGE DIMENSIONS Unit:mm 100~150 Wffl-’'" V —T V 7‘CO K iM 'v lg i: L T S ig o


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    PDF 2SD608/2SB628 2SD608 2SB628 Hf50/PACKAGE 2SB628 2SB628/2SD608 PWS350//S, IC MAX 797 S3V77 251C

    FP1J3P

    Abstract: T108 T460 T540 JS84 kgb ms t0462 se 0138 A2755
    Text: NEC m + — S 7 • S s — h* C om po und Tran sisto r T iv r x f W S K F*3 I c P N P x # p ; - x T O : mm K M At X ’c o m tì K 7 » k: it 0 0 .7 > i 'f r ^ 'ô I f i Ë T 't o 2.8±0.2 1.5 OF7-Î ;ïiÎ'M i /; o i ->„ g LO o> 5 o r> g LO - 4 2


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    PDF J-S84S FP1J3P T108 T460 T540 JS84 kgb ms t0462 se 0138 A2755

    ha 1452 Amplifiers

    Abstract: 702 sot 23 100Z3
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT =10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz ;• .6 dB TYP at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 3.0 dB TYP at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


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    PDF NE680 OT-23) ha 1452 Amplifiers 702 sot 23 100Z3

    Untitled

    Abstract: No abstract text available
    Text: KSA1378 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Complement to KSC3488 • Collector Dissipation Pc =300mW ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Vbltage Collector-Emitter Voltage Emitter-Base Voltage


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    PDF KSA1378 KSC3488 300mW 510ms,

    2SB810

    Abstract: JIS211 transistor C982 C382 n1j 048 ic 6116 IC 7824 ST
    Text: V y □ > h 7 > y X ^ Silicon Transistor 2SB810 P N P x \£ 2 * 4$ V y ' j a > h 7 > v X 5 f *M $ B I « # t : mm * - b v h x H ï îfiO i£ J B  lÜ * f fl,  * Œ * * 3 t Sg » 0> * - * K 7 -T 7 , * <& {*#» K 5 < O ig h F E T 4 .0 ± 0 .2 U T ftiS T T o


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    PDF 2SB810 O2SD1020ta d11736jj4v0ds00 JIS211 2SB810 JIS211 transistor C982 C382 n1j 048 ic 6116 IC 7824 ST

    2SB805

    Abstract: 2SB806 2SD1006 2SD1007 2SB806-KP
    Text: S ilic o n T ra n s is to rs 2SB805/2SB806 P N P i m i; =1 > h ^ + it o o -t —r ' 4 tfè,Ts-^> K y -i '</T ^ F 7 ” -y l ' i c S i S T - t o 2 S D 1 0 0 6 , 2 S D 1 0 0 7 t=i>y" 'S 9 > 9 ' T to T a = 2 5 °C ) m § 99 I V • - î — »§• x a V 9 9 ■ x- l ~y 9 FbTÜJÎ


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    PDF 2SB805/2SB806 2SD1006, 2SD1007 2SB805 2SB806 pws10 cycles50 mmx16 sot-89) 2SD1006 2SB806-KP

    pw510

    Abstract: H150 TC-6178
    Text: 7 s— • S '— S h- SEC Com pound Transistor i i f / v r z BA1A3Q fJtrt I c N P N x V=3> Y = 7 > i> ^ 4# f t £ ffl£ [ U o / < ^ f L T ^ - iì ! mm * 2 . 0 ± 0.2 i : 1~ 0 ^ 6" (R i = 1.0 kQ, R 2= 10 kQ) 46” O BN 1A3Q £ =i > 7° ij / > ^ ij T lt if f l


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    PDF PW510 H150 TC-6178

    ail4m

    Abstract: FIM1L4M 1h0565 M31 marking transistor TRANSISTOR IFW la 5531 FN1L4M
    Text: ± I /7N I ih Compound Transistor F N 1 L4 M i&ijtrtMPNPxfc 4# .' mm it o ^ r x L ^ ^ L T v ^ - r . 2 . 8 + 0.2 R i = 47 k£2, R 2= 47 kQ) o F A 1 L 4 M t 3 y y >J 9 y ? ') (T a = H £ to 2 5 °C ) B& g ^r 5e #r # z V CBO -6 0 V =i W 9 9 • J- = -y 9m 'M l±


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    PDF Ta-25Â ail4m FIM1L4M 1h0565 M31 marking transistor TRANSISTOR IFW la 5531 FN1L4M

    O552

    Abstract: T108 asti 3773 GA1L3N la 5531 L092 GN1L3N mol3
    Text: i. I «\ / v r * l?N I i ï T ÎK r NEC C o m p o u n d T ran sis to r GN1L3N ffif/L r t i e p n p :n t f * * y□v ^ v i* * :? n Sfc U v ^ to R i = 4 .7 k fì, R 2= 10 k£2 o G A 1 L 3 N t 3 > y }) / > ? i) X " itm X"ê i i ~ (Ta = 25 °C) H g 9 n u ?


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    PDF CyclesS50 O552 T108 asti 3773 GA1L3N la 5531 L092 GN1L3N mol3

    JRC 45800

    Abstract: 0620 jrc jrc 13600 jtp sot 143 JRC 6005 4560 d JRC jrc 0620 4560 JRC JRC 76600 transistor 2sc 5586
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES . L O W N O IS E : 1.3 dB A T 2 .0 G H z • L O W V O L T A G E O P E R A T IO N • EASY T O M ATCH • H IG H G A IN B A N D W ID T H P R O D U C T : f ï o f 13 G H z • A V A IL A B L E IN S IX L O W C O S T P L A S T IC S U R F A C E


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    PDF NE687 OT-143} NE68718-T1 NE68719-T1 NE68730-T1 NE68733-T1 NE68739-T1 NE68739R-T1 JRC 45800 0620 jrc jrc 13600 jtp sot 143 JRC 6005 4560 d JRC jrc 0620 4560 JRC JRC 76600 transistor 2sc 5586

    2SC2787

    Abstract: T460-8525 TN 0776 nec 8525 LT1M
    Text: ? — S 7 • S /— h S ilic o n T ra n s is to r 2SC2787 N PN X J r i s T J i ' M i ' ' -1 > b ^ F M / A M 7 ì> * # R F , M IX ., C O N V ., O S C ., IF / B ft # { 2 ; : rnm ) o F M / A M ÿ x ^ - iO R F , W 3 ^ # i i M * Ê * t « * 5 Ë t è ' 5 (T a =


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    PDF

    PA1400H

    Abstract: ic 8705 IC-8705 436AH nec 8705 PA1436AH upa1436ah WT-540 4 W 620
    Text: C o m p o u n d P o w e r T ran sistors /¿PA1 4 3 6 A H N P N X '> 7 \ * M > jL m y°'i > ? • 9 4 y°? 4 ? • y r ? -> $ 'i • e i - ? # • ' ) U - - c r ^ ¡ g i > M T m m ^ f v t r • y ^ # - f e # c o g Æ # f f < 7) vu/4 k • L T b ° - i ?* ^ i 7 ) - A - ë t ^ ''V P X 't ï t a f f l i â t  * ÿ ÿ | Î ¥ L É 't o


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    PDF

    AD1F3P

    Abstract: AD1A3M AD1L3N AD1F2Q AD1A4M PA33 AD1L2Q AD1A4A
    Text: m ^ n "Yi m Æ * £ tfl W o + o * TS S3 A >4 s 3 p| FR 3 Pi FH X nn ns H sTO O a •p o Ö o <; CO o < o O < O CO o o H > II to cn o H TO O 2.2 V >fr § Â AD1F3P ii H /// 4.7 fm M s A 1 >< 3 Pi FH AD1L3N IS Vr Pi Pit » » m » AD1A4M V Pt PS Ü 4.7 p| S+


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    PDF SC-43B PWS10 CycleS50 D10838JJ2VODSOO St111 AD1F3P AD1A3M AD1L3N AD1F2Q AD1A4M PA33 AD1L2Q AD1A4A

    transistor DK RN

    Abstract: 7 HL 05 PA33
    Text: *PWS10 ms , , Du t y C y c l e ^50 % OJ t\3 A 1 U V H /// Vr V? si >j c_ m O O CD CO o m 5 o m o cn o xi > H O c/ o J> End ji­ co CD CO ¡2 T > C-. « > J3 o o AR1A3M •X tì« I H I w SO >1 m 4 ani* ctcr o 3 Fc. M . a - 3 3 pì+ jì Pi £+ a- Í r\


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    PDF SC--43B PWS10 CycleS50 \JC\J040JC\ transistor DK RN 7 HL 05 PA33

    transistor lt 186

    Abstract: NPN Transistor 10A 400V KSC2751 400V 10A NPN transistor
    Text: KSC2751 NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED, HIGH CURRENT SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit Collector- Base Voltage VcBO 500 V Collector- Emitter Voltage VcEO 4 00 V Emitter- Base Voltage V ebo 7 V 15 A Symbol


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    PDF KSC2751 transistor lt 186 NPN Transistor 10A 400V KSC2751 400V 10A NPN transistor