BFE505
Abstract: SOT353 transistor bf 175
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFE505 NPN wideband differential transistor Product specification Supersedes data of 1995 Sep 04 File under Discrete Semiconductors, SC14 1996 Oct 08 Philips Semiconductors Product specification NPN wideband differential transistor
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BFE505
OT353B
BFE505
SOT353
transistor bf 175
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BFE520
Abstract: SOT353 transistor MJE -1103 sot353b transistor bf 175
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFE520 NPN wideband differential transistor Product specification Supersedes data of 1995 Sep 04 File under Discrete Semiconductors, SC14 1996 Oct 08 Philips Semiconductors Product specification NPN wideband differential transistor
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BFE520
OT353B
BFE520
SOT353
transistor MJE -1103
sot353b
transistor bf 175
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CA3054
Abstract: cascode transistor array CA3054M CA3054M96
Text: CA3054 S E M I C O N D U C T O R March 1993 Transistor Array - Dual Independent Differential Amp for Low Power Applications from DC to 120MHz Features Description • Two Differential Amplifiers on a Common Substrate The CA3054 consists of two independent differential
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CA3054
120MHz
CA3054
300MHz.
120MHz.
cascode transistor array
CA3054M
CA3054M96
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3400 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR DIFFERENTIAL AMP. APPLICATION. FEATURES B C ᴌMatched Pairs for Differential Amplifiers. A ᴌHigh Breakdown Voltage : VCEO=120V Min. . ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.). ᴌComplementary to KTA2400.
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KTC3400
KTA2400.
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KTA2400
Abstract: KTC3400
Text: SEMICONDUCTOR KTA2400 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR DIFFERENTIAL AMP. APPLICATION. FEATURES B C ᴌMatched Pairs for Differential Amplifiers. A ᴌHigh Breakdown Voltage : VCEO=-120V Min. . ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.). ᴌComplementary to KTC3400.
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KTA2400
-120V
KTC3400.
KTA2400
KTC3400
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KTC3400
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3400 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR DIFFERENTIAL AMP. APPLICATION. FEATURES B C ・Matched Pairs for Differential Amplifiers. A ・High Breakdown Voltage : VCEO=120V Min. . ・Low Noise : NF=1dB(Typ.), 10dB(Max.). ・Complementary to KTA2400.
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KTC3400
KTA2400.
KTC3400
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BE160
Abstract: KTA2400 KTC3400
Text: SEMICONDUCTOR KTC3400 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR DIFFERENTIAL AMP. APPLICATION. FEATURES B C ᴌMatched Pairs for Differential Amplifiers. A ᴌHigh Breakdown Voltage : VCEO=120V Min. . ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.). ᴌComplementary to KTA2400.
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KTC3400
KTA2400.
BE160
KTA2400
KTC3400
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KTA2400
Abstract: KTC3400
Text: SEMICONDUCTOR KTA2400 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR DIFFERENTIAL AMP. APPLICATION. FEATURES B C ᴌMatched Pairs for Differential Amplifiers. A ᴌHigh Breakdown Voltage : VCEO=-120V Min. . ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.). ᴌComplementary to KTC3400.
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KTA2400
-120V
KTC3400.
KTA2400
KTC3400
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cascode transistor array
Abstract: NTE917
Text: NTE917 Integrated Circuit Dual, Independent Transistor Array, Differential Amp Description: The NTE917 is an integrated circuit consisting of two independent differential amplifiers with associated constant−current transistors on a common monolithic substrate. The six NPN transistors which comprise
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NTE917
NTE917
300MHz.
120MHz.
004-j0
100MHz
cascode transistor array
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60GHz transistor
Abstract: SFT-9400B InP transistor HEMT 60Ghz SFT9400B OC-768 98T2 InP HBT transistor low noise
Text: SFT-9400B SFT-9400B 60GHz Differential Input Transimpedance Amplifier 60GHz DIFFERENTIAL INPUT TRANSIMPEDANCE AMPLIFIER Product Description Features RFMD’s SFT-9400B is a high performance heterojunction bipolar transistor transimpedance amplifier designed for 43Gb/s SONET/SDH, 40GbE, and 100GbE
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SFT-9400B
60GHz
SFT-9400B
43Gb/s
40GbE,
100GbE
50GHz
60GHz transistor
InP transistor HEMT
SFT9400B
OC-768
98T2
InP HBT transistor low noise
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4 npn transistor ic 14pin
Abstract: 8 npn transistor ic 14pin C10535E UPA102G
Text: DATA SHEET COMPOUND TRANSISTOR µPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA102B: Superior thermal dissipation due to studded 14-pin ceramic package
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PA102
PA102B:
14-pin
PA102G:
PA102
4 npn transistor ic 14pin
8 npn transistor ic 14pin
C10535E
UPA102G
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2SC1733
Abstract: 2SC1275 2SC127
Text: DATA SHEET SILICON TRANSISTOR 2SC1733 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER INDUSTRIAL USE PACKAGE DIMENSIONS D E S C R IP T IO N in millimeters The 2SC1733 is an NPN silicon epitaxial dual transistor designed for use in high-frequency differential amplifier applications. Two
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2SC1733
2SC1733
2SC1275
2SC127
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transistor
Abstract: A 798 transistor high power npn UHF transistor Transistor Array differential amplifier TRANSISTOR d 718 gilbert cell differential pair 745 transistor NPN transistor transistor military differential pair transistor
Text: LINEAR TRANSISTOR AND DIODE ARRAYS, AND DIFFERENTIAL AMPLIFIERS PAGE SELECTION G U ID E .
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CA3018,
CA3018A
CA3028A,
CA3028B,
CA3053
CA3039
CA3045,
CA3046
CA3049,
CA3102
transistor
A 798 transistor
high power npn UHF transistor
Transistor Array differential amplifier
TRANSISTOR d 718
gilbert cell differential pair
745 transistor
NPN transistor
transistor military
differential pair transistor
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2sc1275
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The 2SC1927 is an NPN silicon epitaxial dual transistor that
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2SC1927
2SC1927
2SC1275,
2sc1275
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTA2400 EPITAXIAL PLANAR PNP TRANSISTOR DIFFERENTIAL AMP. APPLICATION. FEATURES • • • • Matched Pairs for Differential Amplifiers. High Breakdown Voltage : V ceo = - 120V Min. . Low Noise : NF=ldB(Typ.), 10dB(Max.). Complementary to KTC3400.
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KTA2400
KTC3400.
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Untitled
Abstract: No abstract text available
Text: CA3054 ff H A R R IS S E M I C O N D U C T O R March1993 Transistor Array - Dual Independent Differential Amp for Low Power Applications from DC to 120MHz Features Description • Two Differential Amplifiers on a Common Substrate The CA3054 consists of two independent differential
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CA3054
120MHz
CA3054
300MHz.
120MHz.
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2SK389
Abstract: 2-10M1A 2SJ109 1G100
Text: TOSHIBA 2SK389 TOSHIBA DUAL FIELD EFFECT TRANSISTOR SILICON MONOLITHIC N CHANNEL JUNCTION TYPE 2SK389 LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS. 1 Chip Dual Type. Recommended for First Differential Stages of DC Amplifiers. Very High |Yfs| : |Yfs| = 20mS Typ.
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2SK389
2SJ109
2SK389
2-10M1A
2SJ109
1G100
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KTA2400
Abstract: KTC3400
Text: SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTC3400 EPITAXIAL PLANAR NPN TRANSISTOR DIFFERENTIAL AMP. APPLICATION. FEATURES • • • • Matched Pairs for Differential Amplifiers. High Breakdown Voltage : V c e o = 120V Min. . Low Noise : NF=ldB(Typ.), 10dB(Max.).
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KTC3400
KTA2400.
KTA2400
KTC3400
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2SK389
Abstract: 2SJ109
Text: TO SH IBA 2SK389 TOSHIBA DUAL FIELD EFFECT TRANSISTOR SILICON MONOLITHIC N CHANNEL JUNCTION TYPE 2SK389 LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS. 1 Chip Dual Type. Recommended for First Differential Stages of DC Amplifiers. Very High |Yfs| : |Yfs| = 20mS Typ.
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2SK389
2SJ109
2SK389
2SJ109
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTC3400 EPITAXIAL PLANAR NPN TRANSISTOR DIFFERENTIAL AMP. APPLICATION. FEATURES • • • • Matched Pairs for Differential Amplifiers. High Breakdown Voltage : V c e o = 120V Min. . Low Noise : NF=ldB(Typ.), 10dB(Max.). Complementary to KTA2400.
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KTC3400
KTA2400.
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SFC2741
Abstract: sfc2741c TRANSISTOR REPLACEMENT GUIDE ULN2081A ULN2083 array SFC2741DC TDA1200 LM1307N MC1305P CA1310E
Text: SPRAGUE T ES T TYPE ULN-2054A DUAL INDEPENDENT DIFFERENTIAL AMPLIFIERS The ULN-2054A is a transistor array consisting of six NPN transistors on a single monolithic chip. The transistors are internally interconnected to form two independent differential am
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ULN-2054A
ULN2289A
SFC2741C
SFC2741
ULN2151D
ULN2151M
T2741WV
ULN2151D
TRANSISTOR REPLACEMENT GUIDE
ULN2081A
ULN2083 array
SFC2741DC
TDA1200
LM1307N
MC1305P
CA1310E
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2SC1275
Abstract: 2SC1926
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC1926 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE D E S C R IP T IO N PACKAGE DIMENSIONS The 2SC1926 is an NPN silicon epitaxial dual transistor that in millimeters
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2SC1926
2SC1926
2SC1275,
2SC1275
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2SC1275
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE D E S C R IP T IO N PACKAGE DIMENSIONS The 2SC1927 is an NPN silicon epitaxial dual transistor that in millimeters
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2SC1927
2SC1927
2SC1275,
2SC1275
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2SC1926
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC1926 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE D E S C R IP T IO N PACKAGE DIMENSIONS The 2SC1926 is an NPN silicon epitaxial dual transistor that in millimeters
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2SC1926
2SC1926
2SC1275,
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