nec 620
Abstract: 2SD1582 hFE transistor high hfe transistor
Text: DATA SHEET SILICON TRANSISTOR 2SD1582 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1582 is a single type super high hFE transistor and low PACKAGE DRAWING UNIT: mm collector saturation voltage and high voltage. This transistor is
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2SD1582
2SD1582
nec 620
hFE transistor
high hfe transistor
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2SA1743
Abstract: C11531E
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1743 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1743 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at low VCE(sat). This transistor is
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2SA1743
2SA1743
C11531E
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2SD1581
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SD1581 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1581 is a single type super high hFE transistor and low PACKAGE DRAWING UNIT: mm collector saturation voltage and low power loss. This transistor is
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2SD1581
2SD1581
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2SA1741
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1741 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1741 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at low VCE(sat). This transistor is
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2SA1741
2SA1741
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D1615
Abstract: transistor ab2 12
Text: DATA SHEET SILICON TRANSISTOR 2SD2425 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2425 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING UNIT: mm This transistor is ideal for
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2SD2425
2SD2425
2SB1578
C11531E)
D1615
transistor ab2 12
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2SD2402
Abstract: transistor 2sD2402 Transistor Marking EY
Text: DATA SHEET SILICON TRANSISTOR 2SD2402 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2402 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING UNIT: mm This transistor is ideal for
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2SD2402
2SD2402
2SB1571
transistor 2sD2402
Transistor Marking EY
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SD2403 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2403 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING UNIT: mm This transistor is ideal for
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2SD2403
2SD2403
2SB1572
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2SB1453
Abstract: NEC 2SB1453
Text: DATA SHEET SILICON TRANSISTOR 2SB1453 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1453 is a power transistor that can directly drive from PACKAGE DRAWING UNIT: mm the IC output. This transistor is ideal for motor drivers and solenoid
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2SB1453
2SB1453
NEC 2SB1453
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2SB1453
Abstract: NEC 2SB1453
Text: DATA SHEET SILICON TRANSISTOR 2SB1453 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1453 is a power transistor that can directly drive from PACKAGE DRAWING UNIT: mm the IC output. This transistor is ideal for motor drivers and solenoid
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2SB1453
2SB1453
NEC 2SB1453
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NEC RELAY
Abstract: No abstract text available
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD2163 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING The 2SD2163 is a mold power transistor developed for lowspeed high-current switching. This transistor is ideal for direct
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2SD2163
2SD2163
NEC RELAY
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darlington transistor for audio power application
Abstract: 2SA1714 2SC4342 C11531E
Text: DATA SHEET SILICON TRANSISTOR 2SA1714 PNP SILICON EPITAXIAL POWER TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING The 2SA1714 is a high-speed darlington power transistor. This PACKAGE DRAWING (UNIT: mm) transistor is ideal for high-precision control such as PWM control for
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2SA1714
2SA1714
O-126
2SC4342
C11531E)
darlington transistor for audio power application
2SC4342
C11531E
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ce1a3q
Abstract: No abstract text available
Text: DATA SHEET COMPOUND TRANSISTOR CE1A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE1A3Q is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter and zener diode in collector to base as protect elements. This transistor is ideal for
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1648, 2SA1648-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1648 is a mold power transistor developed for highspeed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC
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2SA1648,
2SA1648-Z
2SA1648
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NEC RELAY
Abstract: 2sb146 NEC RELAY nec 5 2SB1465 C11531E NEC semiconductor
Text: PRELIMINARY DATA SHEET DARLINGTON POWER TRANSISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power transistor developed for low- PACKAGE DRAWING (UNIT: mm)
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2SB1465
2SB1465
C11531E)
NEC RELAY
2sb146
NEC RELAY nec 5
C11531E
NEC semiconductor
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C11531E
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SD2383 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE SWITCHING PACKAGE DRAWING UNIT: mm The 2SD2383 is an element realizing high voltage in small dimension. This transistor is ideal for downsizing sets requiring high voltage.
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2SD2383
2SD2383
C11531E)
C11531E
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NEC semiconductor
Abstract: 2SA1650 C11531E
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1650 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1650 is a mold power transistor developed for high- PACKAGE DRAWING UNIT: mm speed switching and features a very low collector-to-emitter saturation.
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2SA1650
2SA1650
NEC semiconductor
C11531E
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2sA675
Abstract: D16146EJ3V0DS00
Text: DATA SHEET SILICON TRANSISTOR 2SA675 PNP SILICON EPITAXIAL TRANSISTOR FOR DRIVING FLUORESCENT INDICATOR PANNEL The 2SA675 is a resin sealed mold transistor and is ideal for PACKAGE DRAWING UNIT: mm dynamic drivers of counting indicator pannel such as fluorescent
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2SA675
D16146EJ3V0DS00
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2SA1646
Abstract: 2SA1646-Z C11531E
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1646, 2SA1646-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1646 is a mold power transistor developed for high- PACKAGE DRAWING UNIT: mm speed switching and features a very low collector-to-emitter
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2SA1646-Z
2SA1646
2SA1646-Z
C11531E
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2SA1871
Abstract: 2sc4942
Text: DATA SHEET SILICON TRANSISTOR 2SA1871 PNP SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SA1871 is a transistor developed for high-speed high- PACKAGE DRAWING UNIT: mm voltage switching and is ideal for use in switching elements such
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2SA1871
2SA1871
2SC4942
C11531E)
2sc4942
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NEC semiconductor
Abstract: C11531E dumper diode dumper
Text: DATA SHEET COMPOUND TRANSISTOR CE2A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE2A3Q is a transistor of on-chip high hFE resistor PACKAGE DRAWING UNIT: mm incorporating dumper diode in collector to emitter as protect
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C11531E)
NEC semiconductor
C11531E
dumper
diode dumper
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D1615
Abstract: 2SD2383
Text: DATA SHEET SILICON TRANSISTOR 2SD2383 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The 2SD2383 is an element realizing high voltage in small 2.8 ±0.2 +0.1 0.4 –0.05 dimension. This transistor is ideal for downsizing sets
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2SD2383
SC-59
D1615
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2SA1648
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1648,1648-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING DESCRIPTION PACKAGE DRAWINGS Unit: mm 5.0 ±0.2 This transistor is ideal for use in switching regulators, DC/DC 2 3 7.0 MIN. 13.7 MIN. 1 FEATURES
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1648-Z
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transistor marking 7D
Abstract: 2SA1871
Text: DATA SHEET SILICON TRANSISTORS 2SC4942 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC4942 is a transistor developed for high-speed high- PACKAGE DRAWING UNIT: mm voltage switching. This transistor is ideal for use in switching
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2SC4942
2SC4942
2SA1871
C11531E)
transistor marking 7D
2SA1871
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Untitled
Abstract: No abstract text available
Text: DATA SHEET COMPOUND TRANSISTOR AA1F4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 22 kΩ) • Complementary transistor with AN1F4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
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