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    Transistor NEC 30

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR CE1N2R on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE1N2R is a transistor of on-chip high hFE resistor PACKAGE DRAWING UNIT: mm incorporating dumper diode in collector to emitter and zener diode


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    ce1a3q

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR CE1A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE1A3Q is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter and zener diode in collector to base as protect elements. This transistor is ideal for


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    2SD1843

    Abstract: diode dumper
    Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD1843 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1843 is a Darlington connection transistor with on-chip PACKAGE DRAWING (UNIT: mm) dumper diode in collector to emitter and zener diode in collector to


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    PDF 2SD1843 2SD1843 diode dumper

    TRANSISTOR K 314

    Abstract: NEC semiconductor
    Text: DATA SHEET SILICON TRANSISTOR 2SD2463 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2463 is a Darlington connection transistor with on- PACKAGE DRAWING UNIT: mm chip dumper diode in collector to emitter and zener diode in


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    PDF 2SD2463 2SD2463 C11531E) TRANSISTOR K 314 NEC semiconductor

    CE1F3P

    Abstract: D1617
    Text: '$7$ 6+ 7 &203281' 75$16,6725 &( 3 RQFKLS UHVLVWRU 131 VLOLFRQ HSLWD[LDO WUDQVLVWRU )RU PLGVSHHG VZLWFKLQJ The CE1F3P is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter and zener diode in collector to base as protect elements. This transistor is ideal for


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    PDF cycle50 CE1F3P D1617

    NEC semiconductor

    Abstract: C11531E dumper diode dumper
    Text: DATA SHEET COMPOUND TRANSISTOR CE2A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE2A3Q is a transistor of on-chip high hFE resistor PACKAGE DRAWING UNIT: mm incorporating dumper diode in collector to emitter as protect


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    PDF C11531E) NEC semiconductor C11531E dumper diode dumper

    NEC diode

    Abstract: transistor marking 7D 2SD1695 C11531E
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SD1695 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1695 is a Darlington connection transistor and PACKAGE DRAWING (UNIT: mm) incorporates a dumper diode between the collector and emitter and


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    PDF 2SD1695 2SD1695 NEC diode transistor marking 7D C11531E

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR CE2F3P on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE2F3P is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter as protect elements. This transistor is ideal for actuator drives of OA


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    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    2SD1843

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    C11531E

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    uPA1428

    Abstract: uPA1428AH PA1428AH IEI-1213 MEI-1202 MF-1134
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    IRT Connectors

    Abstract: receptacle shell size 04 assembly for screen emc gland
    Text: IRT Connectors IRT Series Rectangular Multi Pole Power Connector Receptacle Shell Size 04 Assembly for Screen EMC Gland IRT 04 R - 3 5 P S XX A Modification Omitted for Standard B0 (Connector Less Contacts) Series IRT Multi Pole Power Connector Connector Shell Size


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    PDF A6854 IRT Connectors receptacle shell size 04 assembly for screen emc gland

    Tf 227

    Abstract: 2SB1093 2SD1579 dumper diode
    Text: PIMP SILICON DARLINGTON TRANSISTOR 2SB1093 DESCRIPTION FEATURES The 2SB1093 is a darlington transistor including a dumper diode at C-E. It is suitable for general driving use, such as hammer, solenoid, lamp or motor. • High DC currentijain. • High current capability, wide ASO and low collector saturation


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    PDF 2SB1093 2SB1093 2SD1579. VCC--50 Tf 227 2SD1579 dumper diode

    transistor bc 248

    Abstract: transistor BC 247 ic 5518 2SB1150 KPR12
    Text: NEC DESCRIPTION PNP SILICON DARLINGTON TRANSISTOR 2SB1150 The 2SB1150 is a darlington transistor built-in a zener diode at PACKAGE DIMENSIONS B-C and a dumper diode at E-C. in millimeters inches 8.5 MAX. 2.8 MAX. (0.334 MAX.) H (0.11 MAX.) It is suitable for use to operate from IC without predriver, such as


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    PDF 2SB1150 2SB1150 m500m transistor bc 248 transistor BC 247 ic 5518 KPR12

    2SD986

    Abstract: 2SD985 2SB795 2SB794 Nec 2sd986
    Text: NPN SILICON DARLINGTON POWER TRANSISTORS 2SD985.2SD986 DESCRIPTION The2SD985, 2SD986 are darlington transistors built-in dumper PACKAGE DIMENSIONS diodes at E-C. They are suitable fo r use to operate from 1C w ith o u t predriver, in millimeters inches 8.5 MAX.


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    PDF 2SD985 2SD986 2SD985, 2SD986 2SB794, 2SB795 1000-lB 2SB794 Nec 2sd986

    d 1698

    Abstract: d1698 2SD1698 motor printer Transistor 2SD1698 dumper
    Text: NPN SILICON TRANSISTOR 2SD1698 D E S C R IP T IO N The 2S D 1698 is NPN silicon epitaxial darlington transistor PAC KAG E D IM E N S IO N S designed for pulse m otor, printer driver, solenoid driver. FEATURES • High DC Current gain. • Includes a dumper diode at E-C.


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    PDF 2SD1698 2SD1698 d 1698 d1698 motor printer Transistor 2SD1698 dumper

    dumper

    Abstract: 2SB1318 diode dumper bu500
    Text: NEC D ES C R IP TIO N PNP SICICON TRANSISTOR 2SB1318 The 2SB1318 is a darlington transistor built-in dumper diode at E-C. PACKAG E D IM E N S IO N S in millimeters inches It is suitable for use to operate from IC w ithout predriver, such as hammer driver.


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    PDF 2SB1318 2SB1318 VCC--40V dumper diode dumper bu500

    2SD985

    Abstract: 2SB794 2SB795 2SD986
    Text: PNP SILICON DARLINGTON POWER TRANSISTORS 2SB794.2SB795 D E S C R IP TIO N The 2SB794, 2SB795 are darlington transistors built-in dumper PA C K A G E D IM E N S IO N S diodes at C-E. in millimeters inches They are suitable for use operating from 1C w ithout predriver,


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    PDF 2SB794 2SB795 2SB794, 2SB795 2SD985, 2SD986 2SB00 2SD985

    diode dumper

    Abstract: 2SD1630
    Text: NPN SILICON DARLINGTON POWER TRANSISTOR 2SD1630 D E S C R IP T IO N The 2 SD 1 6 3 0 is a darlington transistor built-in a zener diode at P A C K A G E D IM E N S IO N S B-C and a dumper diode at E-C. in millimeters inches It is suitable for use to operate from IC w ithout predriver, such


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    PDF 2SD1630 2SD1630 01IWVS diode dumper

    2SB1093

    Abstract: 2SD1579 dumper diode
    Text: NPN SILICON DARLINGTON TRANSISTOR 2SD1579 DESCRIPTION The 2SD1579 is a darlington transistor including a dumper diode at E-C. PACKAGE DIMENSIONS It is suitable for general driving use, such as hammer, solenoid, in millimeters inches lamp or motor. FEATURES


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    PDF 2SD1579 2SD1579 2SB1093. 2SB1093 dumper diode

    diode ssil

    Abstract: 2SD1939 PA33 dumper diode KAG TRANSISTOR
    Text: NEC NPN SILICON DARLINGTON TRANSISTOR 2SD1939 D E S C R IP TIO N The 2SD 1939 is a darlington transistor including a dumper diode PAC KAG E D IM E N S IO N S at E-C . in m illim èters inches It is suitable fo r general driving use, such as hammer, solenoid,


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    PDF 2SD1939 2SD1939 diode ssil PA33 dumper diode KAG TRANSISTOR

    2SD1692

    Abstract: dumper diode
    Text: IM F f /N P N SILICON DARLINGTON TRANSISTOR / D E S C R IP TIO N 2SD1692 The 2S D 1692 is a darlington transistor built-in dumper diode PAC KAG E D IM E N S IO N S at E-C. in millimeters inches It is suitable fo r use to operate from IC w ith o ut predriver, such


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    PDF 2SD1692 2SD1692 fo-11 dumper diode

    dumper

    Abstract: darlington transistor with built-in temperature 2SD1693 dumper diode
    Text: NPN SILICON DARLINGTON TRANSISTOR 2SD1693 DESCRIPTION The 2SD1693 is a darlington transistor built-in a zener diode at PACKAGE DIMENSIONS in millimeters inches B-C and a dumper diode at E-C. 8.5 MAX. (0.334 MAX.) It is suitable for use to operate from IC without predriver, such as


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    PDF 2SD1693 2SD1693 100m200m dumper darlington transistor with built-in temperature dumper diode