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    TRANSISTOR C 2240 Search Results

    TRANSISTOR C 2240 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 2240 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GT45F122

    Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
    Text: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor


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    PDF BCE0010D S-167 BCE0010E GT45F122 gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124

    AP50G60W-HF

    Abstract: 50A33
    Text: AP50G60W-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C ▼ High Speed Switching ▼ Low Saturation Voltage VCE sat ,Typ. =2.5V@IC=40A ▼ RoHS Compliant & Halogen-Free VCES 600V IC 40A G C C


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    PDF AP50G60W-HF 100oC 100us AP50G60W-HF 50A33

    30G120ASW

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP30G120ASW-HF-3 N-Channel Insulated Gate Bipolar Power Transistor High Speed Switching V CES 1200V Low Saturation Voltage C tab 30A IC Typical VCE(sat)= 2.9V at IC=30A G Internal "Co-Pak" Fast Recovery Diode C C RoHS-compliant, halogen-free TO-3P package


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    PDF AP30G120ASW-HF-3 AP30G120AS 30G120ASW 30G120ASW

    Untitled

    Abstract: No abstract text available
    Text: AP30G120ASW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features High Speed Switching VCES Low Saturation Voltage V CE sat =2.9V@IC=30A CO-PAK, IGBT With FRD RoHS Compliant IC 1200V 30A C C


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    PDF AP30G120ASW Fig11.

    TO-253-AA

    Abstract: Small-outline integrated circuit SOT 143 transistor 143 46d1 308 transistor MDV 1-2 kv SOT-143 sot143 transistor transistor C 2240
    Text: Open-Drain Microprocessor Supervisory Circuit in 4-Lead SOT-143 ADM6315 FEATURES FUNCTIONAL BLOCK DIAGRAM VCC GND VREF ADM6315 RESET RESET CIRCUITRY MR DEBOUNCE 00081-001 Specified over temperature Low power consumption 5 A typical Precision voltage monitor of voltages from 2.5 V to 5 V


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    PDF OT-143 ADM6315 ADM811 OT-143 D00081-0-9/07 TO-253-AA Small-outline integrated circuit SOT 143 transistor 143 46d1 308 transistor MDV 1-2 kv SOT-143 sot143 transistor transistor C 2240

    ADM6315-31D4ARTZR7

    Abstract: ADM6315-29D4ART-RL7 branding llv ADM6315-46D3ART transistor F 463 V/65e9 transistor
    Text: Data Sheet Open-Drain Microprocessor Supervisory Circuit in 4-Lead SOT-143 ADM6315 FEATURES FUNCTIONAL BLOCK DIAGRAM VCC GND VREF ADM6315 RESET RESET CIRCUITRY MR DEBOUNCE 00081-001 Specified over temperature Low power consumption 5 A typical Precision voltage monitor of voltages from 2.5 V to 5 V


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    PDF OT-143 ADM6315 ADM811 ADM6315 D00081-0-12/11 ADM6315-31D4ARTZR7 ADM6315-29D4ART-RL7 branding llv ADM6315-46D3ART transistor F 463 V/65e9 transistor

    transistor TO Outline Dimensions

    Abstract: transistor d 140 g
    Text: Data Sheet Open-Drain Microprocessor Supervisory Circuit in 4-Lead SOT-143 ADM6315 FEATURES FUNCTIONAL BLOCK DIAGRAM VCC GND VREF ADM6315 RESET RESET CIRCUITRY MR DEBOUNCE 00081-001 Specified over temperature Low power consumption 5 A typical Precision voltage monitor of voltages from 2.5 V to 5 V


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    PDF OT-143 ADM6315 ADM811 ADM6315 D00081-0-9/13 transistor TO Outline Dimensions transistor d 140 g

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Open-Drain Microprocessor Supervisory Circuit in 4-Lead SOT-143 ADM6315 FUNCTIONAL BLOCK DIAGRAM FEATURES VCC GND VREF ADM6315 RESET RESET CIRCUITRY MR DEBOUNCE 00081-001 Specified over temperature Low power consumption 5 A typical Precision voltage monitor of voltages from 2.5 V to 5 V


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    PDF OT-143 ADM6315 ADM811 OT-143 D00081-0-12/11

    transistor C 2240

    Abstract: ADM6315-44D2ARTZR71 ADM6315-29D2ARTZR71 308 transistor sot143
    Text: Open-Drain Microprocessor Supervisory Circuit in 4-Lead SOT-143 ADM6315 FUNCTIONAL BLOCK DIAGRAM FEATURES VCC GND VREF ADM6315 RESET RESET CIRCUITRY 00081-001 APPLICATIONS Microprocessor systems Controllers Intelligent instruments Automotive systems Safety systems


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    PDF OT-143 ADM6315 ADM811 ADM6315 C00081-0-4/06 transistor C 2240 ADM6315-44D2ARTZR71 ADM6315-29D2ARTZR71 308 transistor sot143

    SOT-143

    Abstract: ADM6315 ADM6315-31D1ART-RL ADM6315-31D1ART-RL7 ADM6315-44D1ART-RL ADM6315-44D1ART-RL7 ADM6315-45D1ART-RL ADM6315-45D1ART-RL7 ADM6315-46D1ART-RL ADM6315-46D1ART-RL7
    Text: Open-Drain Microprocessor Supervisory Circuit in 4-Lead SOT-143 ADM6315 FEATURES Specified over Temperature Low Power Consumption 5 ␮A Typ Precision Voltage Monitor of Voltages from 2.5 V to 5 V at 100 mV Increments Reset Assertion Down to VCC > 1 V Reset Timeout Periods: 1 ms, 20 ms, 140 ms,


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    PDF OT-143 ADM6315 ADM811 OT-143 ADM6315 10/01--Data C00081 SOT-143 ADM6315-31D1ART-RL ADM6315-31D1ART-RL7 ADM6315-44D1ART-RL ADM6315-44D1ART-RL7 ADM6315-45D1ART-RL ADM6315-45D1ART-RL7 ADM6315-46D1ART-RL ADM6315-46D1ART-RL7

    transistor C 2240

    Abstract: transistor mw 131 2.4 ghZ rf transistor transistor cross reference chart RF TRANSISTOR BFP650F transistor 20 dB 2400 mhz low power rf transistor T INFINEON schematic diagram amplifier TRANSISTOR 12 GHZ
    Text: Ap pl ica t io n N o te, Re v. 1 . 2, F e br ua ry 2 00 8 A p p li c a t i o n N o t e N o . 1 5 3 I n f i n e on ’ s B F P 6 5 0 F R F T r a n s i s t or i n H i g h L i n e a r i t y 2 . 4 G H z L o w N o i s e A m p l i fi e r L N A Application R F & P r o t e c ti o n D e v i c e s


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    PDF BFP650F transistor C 2240 transistor mw 131 2.4 ghZ rf transistor transistor cross reference chart RF TRANSISTOR transistor 20 dB 2400 mhz low power rf transistor T INFINEON schematic diagram amplifier TRANSISTOR 12 GHZ

    transistor t 2190

    Abstract: 2110 transistor AS-2110 transistor 1740 UMTS transistor transistor C 2240 SiGe PNP transistor ultra low noise transistor transistor cross reference chart SiGe PNP
    Text: A p p l i c a t i o n N o t e , R e v . 1 . 2 , A ug us t 2 00 7 A p p li c a t i o n N o t e N o . 1 1 6 B F R 7 4 0 L 3 U l tr a Lo w N o i s e S i G e : C R F T r an s i s t o r a s 2 1 1 0 - 21 7 0 M H z U M T S L o w N o i s e A m p l i fi e r R F & P r o t e c ti o n D e v i c e s


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    PDF BFR740L3 transistor t 2190 2110 transistor AS-2110 transistor 1740 UMTS transistor transistor C 2240 SiGe PNP transistor ultra low noise transistor transistor cross reference chart SiGe PNP

    p421 coupler

    Abstract: MOC604A CNY17-3Z TLP250 MOSFET DRIVER application note TLP250 MOSFET DRIVER p421 Photocoupler CNY17-2Z TRANSISTOR AC125 TLP181 SMD 11-4C1 TYPE moc3041 application note
    Text: Photocouplers PRODUCT GUIDE New Products •Photorelay T The TLP227GA Series of general-purpose photorelays features devices whose OFF-state voltage 400 V is superior to that of TLP227G Series devices (350 V). This superior OFF-state voltage allows larger safety


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    PDF TLP227GA TLP227G TLP227GA TLP227G/TLP597GA/TLP227GA-2 p421 coupler MOC604A CNY17-3Z TLP250 MOSFET DRIVER application note TLP250 MOSFET DRIVER p421 Photocoupler CNY17-2Z TRANSISTOR AC125 TLP181 SMD 11-4C1 TYPE moc3041 application note

    NEC 10F triac

    Abstract: TLP250 MOSFET DRIVER p421f p421 coupler P181 Photocoupler tlp3065 TLP3083 TLP520 TLP250 MOSFET DRIVER application note 5252 F 4-pin
    Text: 2008-3 PRODUCT GUIDE Photocouplers and Photorelays s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Product Index Part Number Package Output Page TLP102 TLP106 TLP112 TLP112A TLP113 TLP114A TLP114A IGM TLP115 TLP115A TLP116 TLP117


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    PDF TLP102 TLP106 TLP112 TLP112A TLP113 TLP114A TLP115 TLP115A TLP116 NEC 10F triac TLP250 MOSFET DRIVER p421f p421 coupler P181 Photocoupler tlp3065 TLP3083 TLP520 TLP250 MOSFET DRIVER application note 5252 F 4-pin

    MP6101

    Abstract: Power MOSFET, P, toshiba mp4002 mp4002 MP4004 toshiba mp6101 MP3202 mp6401 mp6401 toshiba SWITCH PIN DIODE MP6002 mp6002
    Text: Power Modules PRODUCT GUIDE CONTENTS 1. 2. 3. 4. 5. 6. Product List Introduction to the Products and Their Features Structure and Dimensions Power Module Packages System Diagram of Power Module Products Power Module Product Matrix 7. Product Line-ups Listed by Package


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    PDF MP4005~ MP4101~ MP4301~ MP6301 MP4501~ MP6901 S-10M MP4208~ S-12M MP4410~ MP6101 Power MOSFET, P, toshiba mp4002 mp4002 MP4004 toshiba mp6101 MP3202 mp6401 mp6401 toshiba SWITCH PIN DIODE MP6002 mp6002

    ph 4148 zener diode

    Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
    Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS


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    PDF DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148

    transistor C 2240

    Abstract: transistor C 2240 BL transistor C 2240 GR KTC2240 KTc2240 transistor transistor C 2240 gr 25 NPN transistor KTC 200 2240 BL NPN transistor 2240 low noise audio amplifier npn transistor
    Text: SILICON NPH TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS KTC 2240 ( A PPLICA TIO N S ) • Low N oise Audio A mplifier Applications. ( FEA TU RES ) The KTC2240 i s a t r a n s i s t o r f o r l o w f r e q u e n c y an d low n o is e a p p li c a ti o n s .


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    PDF KTC2240 100juA transistor C 2240 transistor C 2240 BL transistor C 2240 GR KTc2240 transistor transistor C 2240 gr 25 NPN transistor KTC 200 2240 BL NPN transistor 2240 low noise audio amplifier npn transistor

    2SC3584

    Abstract: ne3813 SC358 NE68133 10r 236 NE68100 NE AND "micro-X" el3025 2SC3582 2SC3583
    Text: N E C / CALIFORNIA 1SE NEC J> b427414 OOG144S 7 NPN SILICON HIGH FREQUENCY TRANSISTOR T-3I-& T -3 I-I7 NE68100 NE68132 NE68133 NE68135 NE68137 FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 8 GHz The NE681 series of NPN silicon transistors are designed for


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    PDF OOG144S NE68100 NE68132 NE68133 NE68135 NE68137 NE68100, NE68135. NE681 2SC3584 ne3813 SC358 10r 236 NE AND "micro-X" el3025 2SC3582 2SC3583

    transistor C 2240 BL

    Abstract: KTC2668 ktc732tm KTC2670 4L1A KTA970 KTC941TM KTC1923 732TM/KTN
    Text: [E SMALL SIGNAL TRANSISTOR v CEO USE ic Pc hFE TYPE PU RPO SE K T A 1048 V (m A ) (V ) (m A ) (m W ) 50 150 400 70-700 6 2 -6 -2 -5 0 -150 400 70—400 50 150 200 70-700 6 2 70-400 -6 ~2 -5 0 -150 200 Ib *C (V ) 0.25 -0.3 0.25 -0.3 (m A ) Typ (M IN ) (m A)


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    PDF 1923/KTN 45MHz 88A/KTN f-45M 732TM/KTN 2240/KTN 970/KTP transistor C 2240 BL KTC2668 ktc732tm KTC2670 4L1A KTA970 KTC941TM KTC1923

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2240 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC 2240 LOW NOISE AUDIO AMPLIFIER APPLICATIONS The 2SC2240 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the region of low signal source impedance, and to lower the pulse


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    PDF 2SC2240 2SC2240

    AOI21

    Abstract: OAI21 UNITED TECHNOLOGIES MICROELECTRONICS CENTER nand gate layout TTL XOR2 operation of sr latch using nor gates UTB Series transistor QB three input OR gate United Technologies Microelectronics
    Text: Semicustom Products UTB Series Gate Array Family Preliminary Data Sheet UNITED _ TECHNOLOGIES MICROELECTRONICS ICENTER FEATURES □ D esign ed for m ilitary/aerospace applications - Operating range: —5 5 °C to 1 2 5 ° C - Supply voltage: 5V + 10% - E SD protection: 2001 V m inim um


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    PDF 150mA 617-890-UTMC UTB-3-11 -86-DS AOI21 OAI21 UNITED TECHNOLOGIES MICROELECTRONICS CENTER nand gate layout TTL XOR2 operation of sr latch using nor gates UTB Series transistor QB three input OR gate United Technologies Microelectronics

    MC35172U

    Abstract: MC35174L MC35171U MC33174
    Text: MC33171, MC35171 MC33172, MC35172 MC33174, MC35174 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2 Low Power, Single Supply Operational Amplifiers Quality bipolar fabrication with innovative design concepts are employed for the MC33171/72/74, MC35171/72/74 series of monolithic operational


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    PDF MC33171, MC35171 MC33172, MC35172 MC33174, MC35174 MC33171/72/74, MC35171/72/74 MC35172U MC35174L MC35171U MC33174

    Untitled

    Abstract: No abstract text available
    Text: CA5160 ffl H A R R IS S E M I C O N D U C T O R BiMOS Microprocessor Operational Amplifiers with MOSFET Input/CMOS Output March 1993 Features Description • MOSFET Input Stage - Very High Z|; 1.5TQ 1.5 x 1012ii Typ. CA5160A and CA5160 are integrated circuit operational amplifi­


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    PDF CA5160 1012ii) CA5160A CA5160 CA5130 CA3080A. CA3080A CA3140

    bd7995

    Abstract: P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361
    Text: H F To X 8366IT U N E B Issue 2/8534 STR910A B26000 2000 General Wiring Diagram Figure 10.1 +28 V sense) GROUND Meter Batt. sense + Sense Isolated Ground Batt. GND O FF 28 V O FF (T X O F F ) Relays K4, K1 & K2 BATT. MODE »DC» Relays K5, K6 +8 V in GROUND


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    PDF 8366IT STR910A B26000 B26050 B2G010 B26010 B2701D 9SM102/V4T7 bd7995 P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361