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    TRANSISTOR B A O 331 Search Results

    TRANSISTOR B A O 331 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B A O 331 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HF 331 transistor

    Abstract: No abstract text available
    Text: _LL 86D 01952* o o m n o DbE D N AMER PHILIPS/DXSCRETE BLY92A T -3 3 -& 7 D 2 A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and


    OCR Scan     		PDF BLY92A HF 331 transistor

    Untitled

    Abstract: No abstract text available
    Text: 0Q247fll D5b B A P X Philips Semiconductors N AUER PHILIPS/DISCRETE NPN 3 GHz wideband transistor DESCRIPTION Product specification b?E ]> S BFG17A PINNING NPN wideband transistor in a microminiature plastic S O U 43 surface mounting envelope with double emitter bonding.


    OCR Scan     		PDF 0Q247fll BFG17A OT143.

    3004x

    Abstract: antenna amplifiers Transistor BFX 25 BFX55 63310-A Q60206-X55
    Text: BFX55 NPN Transistor for VHF output stages in antenna amplifiers B F X 5 5 is an epitaxial NPN silicon planar transistor in a case 5 C 3 DIN 41 873 T O -39 . The colle cto r has been electrically connected to the case. The transistor is especially suitable fo r use in the VHF o u tp u t stages o f channel- and w ideband antenna


    OCR Scan     		PDF BFX55 BFX55 Q60206-X55 50ff1A 3004x antenna amplifiers Transistor BFX 25 63310-A Q60206-X55

    J295

    Abstract: BU705 BU705D
    Text: I [ PHILIPS INTERNATIONAL MSE D E3 711QñHb OD3üñcí3 3 E3PHIN BU705 BU705D A T '3 3 - P SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching, glass passivated npn pow er transistor in a S O T 9 3 A envelope, intended fo r use in horizontal deflection circuits o f television receivers. The B U 7 0 5 D has an integrated efficiency


    OCR Scan     		PDF 711QfiHt. BU705 BU705D T-33-P OT93A BU705D BU705D) J295 BU705

    2SC3844

    Abstract: 374171 reo4
    Text: FUJ I TS U M I C R O E L E C T R O N I C S 31E D a 374R7b5 G01bb2b b S F M I T-33 January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - 2SC3844 Silicon High Speed Power Transistor 2S C 3844 4 5 0 V , 15A A B S O L U T E M A X IM U M R A T IN G S Parameter Storage Tem perature Range


    OCR Scan     		PDF 374R7b5 2SC3844 2SC3844 200jiH -450V 374171 reo4

    Untitled

    Abstract: No abstract text available
    Text: S IL IC O N M O N O L IT H IC B IP O L A R D IG IT A L IN T E G R A T E D C IR C U IT TD62504P-H 7eh SINGLE DRIVER : C O M M O N EMITTRER Th e T D 6 2 5 0 4 P -H is com prised o f seven o r five N PN Transistor Arrays. A p p lic a tio n s include relay, ham m er, lam p a n d disp lay


    OCR Scan     		PDF TD62504P-H IP16-P -300A 50//S,

    GK transistor 42

    Abstract: transistor FET cd 332 m
    Text: Mechanical Outlines MT-42 TO -18 02.0 1 2 3 Transistor O FET TO-39 ! CD Lead Code r *>4.74 S D G TO-72 04.74 08.26 ses 1 K Lead Code Unit : m m inch , T o lerance : +/- 0 .3 m m (0.012inch), N o scale 3-31 2 3 GK GA 4 A J B E C CASE G E B C CASE DH S D G


    OCR Scan     		PDF MT-42 012inch) GK transistor 42 transistor FET cd 332 m

    bd142

    Abstract: No abstract text available
    Text: Power Transistors * _ X - 3 3 _ - 1 3 BD142 File Number HARRIS SEMICOND SECTOR - B7E< D High-Power Silicon N-P-N Transistor B M3D2S71 DGSGlDa 701 BIH AS •TERMINAL DESIGNATIONS General-Purpose Device For Commercial Use Features: • M a x im u m -sa fe -a re a -o f-o p e ra tio n curves


    OCR Scan     		PDF BD142 M3D2S71 92CSH2M7K1 23C6RI 92CS-12326RI

    CA3046 equivalent

    Abstract: ca3046 CA3045 Harris CA3046 "an5296 Application of the CA3018" CA3046 NPN matched transistors "Application of the CA3018" 619 TRANSISTOR D430S
    Text: H A RR IS S E M I C O N D S E CT OR blE D • 43 D2 27 1 CA3045, CA3046 CSÌ H A R R IS S E M I C O N D U C T O R General Purpose N-P-N Transistor Arrays March 1993 Description Features • Q O H b 'H S 37b ■ HAS Two Matched Transistors: V BE Matched ±5mV; Input


    OCR Scan     		PDF CA3045, CA3046 CA3045 CA3046 CA3046 equivalent Harris CA3046 "an5296 Application of the CA3018" CA3046 NPN matched transistors "Application of the CA3018" 619 TRANSISTOR D430S

    transistor BC 331

    Abstract: BC 331 Transistor bc 331 BC182 BC184 bc 184 transistor h21e BC183 transistor BC 55 transistor bc 182
    Text: *BC182 BC 183 BC 184 NPN SILICON TRANSISTOR, EPITAXIAL P LA N A R T R A N S IS T O R N P N S ILIC IU M , P L A N A R E P IT A X IA L Compì, of BC 212, BC 213, BC 214 H* Preferred device D isp o sitif recommandé - Low noise preamplifier Préamplificateurs faible b ruit


    OCR Scan     		PDF BC182 CB-76 V240-500 BC183C-BC184C 300tit 200/xA transistor BC 331 BC 331 Transistor bc 331 BC184 bc 184 transistor h21e BC183 transistor BC 55 transistor bc 182

    transistor B A O 331

    Abstract: mje340 equivalent d 331 TRANSISTOR equivalent
    Text: ¡S A M S U N G S E M IC O N D U C T O R I N C MJE340 14E 0 J | 7cl b tl l i f S 000770D fl NPN EPITAXIAL SILICON TRANSISTOR HIGH COLLECTOR-EMITT&R SUSTAINING VOLTAGE HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORMER Complementary to MJE350


    OCR Scan     		PDF MJE340 MJE350 0QG77fe transistor B A O 331 mje340 equivalent d 331 TRANSISTOR equivalent

    CT 1975 sam

    Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
    Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the


    OCR Scan     		PDF 2SC4570 2SC4570-T1 CT 1975 sam transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking

    p626

    Abstract: IC P626 TLP626-1
    Text: TLP626,-2,-4 GaAs IRED a PHOTO-TRANSISTOR PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION Unit in mm T h e T O S H I B A TLP626, -2 and -4 consist of two g a l l i u m ar s e n i d e infreared emitting diodes c onnected in inverse parallel, optic a l l y coupled


    OCR Scan     		PDF TLP626 TLP626, p626 IC P626 TLP626-1

    3064M

    Abstract: S2-24V
    Text: S ANYO S EMI CONDUCT OR. CORP 12 E D ^ LB1760 r 7 T i 7 0 7 t, 0 0 0 3 B 0 Ö " T - H 5 -Z.S M o n o l i t h i c D ig ita l IC 3064 6-Unit Transistor Array 1 8 2 2 A Applications Drivers of relays, printers, lamps. Features . Hide input voltage range: VIN=-J<0 t0 +20V


    OCR Scan     		PDF LB1760 320mA Q003311 3064M S2-24V

    transistor NEC D 587

    Abstract: LS 1691 BM UPA802T l 9143 NEC D 587
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD T he/xP A 802T has b u ilt-in 2 1o w -v o It age tra n s is to rs w h ic h are d e sig ne d PACKAGE DRAWINGS


    OCR Scan     		PDF uPA802T 2SC4227) transistor NEC D 587 LS 1691 BM l 9143 NEC D 587

    2SA1763

    Abstract: IRF 543 MOSFET 2SA1863 EA MOSFET 63 ng marking WMM 2SA1857 2SA1864 2SA1865 2SA1866 2SA1883
    Text: NEW PRODUCT SMCP Super Mini Chip Pack Transistor series The new ly d e v e lo p e d Sanyo SMCP package can make th e s e t s more compact and slim m er b e ca u se of a s u p e r mini package. _ We have v a r io u s p ro d u c ts f o r such a p p l i c a t i o n s a s shown below. In a d d it i o n , we can p ro v id e you w ith r e e l - s t y l e packing


    OCR Scan     		PDF m-126 T0-126LP T0-220CI T0-220ML SC-67, OT-186) O-220FIÂ SC-67KS0T-189} T0-220MF lsDwATT220> 2SA1763 IRF 543 MOSFET 2SA1863 EA MOSFET 63 ng marking WMM 2SA1857 2SA1864 2SA1865 2SA1866 2SA1883

    2SK49

    Abstract: transistor 2sk49 reciver circuit for radio transistor KIN NEC CIR TC306 radio reciver
    Text: N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR D E S C R IP T IO N T he 2S K 49 is designed fo r use in FM tu n e r o f a po ta b le R A D IO P A C K A G E D IM E N S IO N S R E C IV E R . in m illim eters inches FEATURES • High F orw a rd T ra n sfe r A d m itta n c e .


    OCR Scan     		PDF 2SK49 2SK49 J22686 TC-3063A transistor 2sk49 reciver circuit for radio transistor KIN NEC CIR TC306 radio reciver

    C 331 Transistor

    Abstract: transistor 331 331 transistor transistor C 331 y 331 Transistor transistor 331 8 of ic 331 transistor 331 p g060 NPN/transistor C 331
    Text: LINEAR INTEGRATED CIRCUIT TBA 331 GENERAL PURPOSE The TBA 331 is an assembly of 5 silicon NPN transistors on a common monolithic substrate In a Jedec TO-116 14-lead dual in-line plastic package. Two transistors are internally connected to form a differential amplifier.


    OCR Scan     		PDF O-116 14-lead C 331 Transistor transistor 331 331 transistor transistor C 331 y 331 Transistor transistor 331 8 of ic 331 transistor 331 p g060 NPN/transistor C 331

    s3331

    Abstract: No abstract text available
    Text: N AMFR PHILIPS/DISCRETE b'lE P bbSBT31 0026333 331 « A P X Philips Semiconductors Product specification Silicon diffused power transistor BU1508DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated


    OCR Scan     		PDF bbSBT31 BU1508DX bb53T31 S3331 DD2fl33fl

    Untitled

    Abstract: No abstract text available
    Text: WL 4-2 W L 4-2 F 331 -E 331 W L 4-2 F 132 -E 132 F Range 2.8 m ¥ •M -12 Features: • Red light sender LED to assist with setting-up • Polarisation filte r which enables recognition o f objects w ith glossy surfaces Adjustment aided by LED signal strength indicator


    OCR Scan     		PDF 1000/s

    N331

    Abstract: SICK WT 4-2 sick optic switching transistor 331 P 331 HF 331 transistor 2N330 4-2P330
    Text: WT 4-2 W T 4-2 P 331 -N 331 W T 4-2 P 132 -N 132 V Scanning range ¥ Y 130 m m - Features 12- W T 4-2 P 330 -N 330 Red light sender LED to assist with setting-up Scanning distance is steplessly variable A Background suppression • Adjustment aided by LED signal


    OCR Scan     		PDF -2P33I -2N33I 1000/s N331 SICK WT 4-2 sick optic switching transistor 331 P 331 HF 331 transistor 2N330 4-2P330

    DF 331 TRANSISTOR

    Abstract: D F 331 TRANSISTOR transistor d 331 transistor df 331 C 331 Transistor
    Text: SIEMENS BUZ 331 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 331 l/bs 500 V fa 8A ^%S on 0 .8 » Package Ordering Code TO-218AA C67078-S3114-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values


    OCR Scan     		PDF O-218AA C67078-S3114-A2 00--------V O-218AA DF 331 TRANSISTOR D F 331 TRANSISTOR transistor d 331 transistor df 331 C 331 Transistor

    Untitled

    Abstract: No abstract text available
    Text: b3E D • 7*îT707b 0 ü lC H b 3 5 7 0 « T S A J O rdering n u m b er : EN 4345 SA NYO S E M I C O N D U C T O R CORP Thick-film Hybrid Integrated Circuit H IC STK6105 SA\YO DC 3-phase Brushless Motor Driver (Output Current 5A) Overview Package Dimensions


    OCR Scan     		PDF T707b STK6105 17Q7b

    LA7835

    Abstract: No abstract text available
    Text: Ordering number : EN 3313C M onolithic Linear IC LA7837,7838 N0.3313C Vertical Deflection Circuit with TV / CRT Display Drive Overview The LA7837.7838 are vertical deflection output ICs developed for use in high-grade TVs and displays. The interlace and crossover distortion responses, in particular, have been greatly improved, allowing


    OCR Scan     		PDF 3313C LA7837 H707b 7Ti707Li LA7835