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    TRANSISTOR A 92 Search Results

    TRANSISTOR A 92 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A 92 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LS3250SC NPN TRANSISTOR Linear Systems NPN Transistor The LS3250SC is a NPN transistor mounted in a single TO-92 package. The 3 Pin TO-92 provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. See Packaging Information .


    Original     		PDF LS3250SC LS3250SB T0-92

    Untitled

    Abstract: No abstract text available
    Text: LS3250SB NPN TRANSISTOR Linear Systems NPN Transistor The LS3250SB is a NPN transistor mounted in a single TO-92 package. The 3 Pin TO-92 provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. See Packaging Information .


    Original     		PDF LS3250SB T0-92

    Mitsubishi M54564

    Abstract: M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p
    Text: Transistor-Array series Wide products range help reduce applications sets size and weight Transistor-Array series Application Transistor Array is a semiconductor integrated circuit in which a minute input current enables a high current drive. Transistor Arrays are used in a wide


    Original     		PDF A/20V 16P2Z 16pin 225mil 05MIN. 20pin 300mil 20P2N 20P2E Mitsubishi M54564 M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p

    Untitled

    Abstract: No abstract text available
    Text: LS3550SC PNP TRANSISTOR Linear Systems PNP Transistor The LS3550SC is a PNP transistor mounted in a TO-92 package. The TO-92 provides ease of manufacturing. See Packaging Information . LS3550SC Features: ƒ Low Output Capacitance ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)


    Original     		PDF LS3550SC T0-92

    Untitled

    Abstract: No abstract text available
    Text: LS3550SB PNP TRANSISTOR Linear Systems PNP Transistor The LS3550SB is a PNP transistor mounted in a TO-92 package. The TO-92 provides ease of manufacturing. See Packaging Information . LS3550SB Features: ƒ Low Output Capacitance ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)


    Original     		PDF LS3550SB T0-92

    Untitled

    Abstract: No abstract text available
    Text: LS3250SA NPN TRANSISTOR Linear Systems NPN Transistor The LS3250SA is a NPN transistor mounted in a single TO-92 package. The 3 Pin TO-92 provides ease of manufacturing. See Packaging Information . LS3250SA Features: ƒ Low Output Capacitance ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)


    Original     		PDF LS3250SA T0-92

    AC1501

    Abstract: No abstract text available
    Text: A42Q Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product Features SOT-89 • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. D D1 A E E1 • This transistor is also available in the TO-92 case with the


    Original     		PDF OT-89 MPSA42. OT-89 01-Jun-2002 AC1501

    2N5172

    Abstract: No abstract text available
    Text: 2N5172 0.5 A, 25 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  TO-92 General Purpose Amplifier Transistor G H Emitter Collector Base J A D Collector


    Original     		PDF 2N5172 29-Dec-2010 2N5172

    transistor BUJ100

    Abstract: cfl circuits cfl Self-Oscillating Philips cfl buj100 equivalent BALLAST low loss philips buj100 transistor BEP transistor BUJ100 cfl circuit
    Text: PHILIPS SEMICONDUCTORS APPLICATION NOTE Philips' BUJ100 transistor in TO-92 suits all Compact Fluorescent Lamp powers Philips Semiconductors has developed a new generation of planar passivated, fast switching bipolar lighting transistor that breaks new ground in lighting-transistor technology. Rated at 700 V


    Original     		PDF BUJ100 transistor BUJ100 cfl circuits cfl Self-Oscillating Philips cfl buj100 equivalent BALLAST low loss philips buj100 transistor BEP transistor cfl circuit

    2N4400

    Abstract: No abstract text available
    Text: 2N4400 0.6 A, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  General Purpose Amplifier Transistor TO-92 G  Emitter  Base  Collector H J A D


    Original     		PDF 2N4400 150mA 500mA 150mA, 500mA, 100MHz 29-Dec-2010 2N4400

    2N4402

    Abstract: No abstract text available
    Text: 2N4402 -0.6 A, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  TO-92 General Purpose Amplifier Transistor G H  Emitter  Base  Collector J A


    Original     		PDF 2N4402 -500mA -150mA, -15mA -500mA, -50mA 2N4402

    MARKING P2Z

    Abstract: SGA9289 SGA-9289 130C J231 transistor j392 sot89
    Text: SGA-9289 Z SGA-9289(Z) Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SGA-9289 is a high performance transistor designed for operation to


    Original     		PDF SGA-9289 OT-89 SGA9289Z" SGA9289" SGA-9289Z EDS-101498 SGA-9289 MARKING P2Z SGA9289 130C J231 transistor j392 sot89

    2N3828

    Abstract: No abstract text available
    Text: 2N3828 0.1 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES General Purpose Amplifier Transistor  TO-92 G H  Emitter  Base  Collector J A D


    Original     		PDF 2N3828 100MHz 29-Dec-2010 2N3828

    2SC4185

    Abstract: nec 2571 nec 2571 4 pin C 4804 transistor 60.0000 oscillator 1900000
    Text: DATA SHEET SILICON TRANSISTOR 2SC4185 UHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4185 is an NPN silicon epitaxial transistor intended for use as a UHF oscillator and a mixer in a tuner of a TV receiver. The device


    Original     		PDF 2SC4185 2SC4185 nec 2571 nec 2571 4 pin C 4804 transistor 60.0000 oscillator 1900000

    transistor NEC b 882

    Abstract: transistor NEC b 882 p 2SC4186 NEC 2562 NPN SILICON EPITAXIAL TRANSISTOR
    Text: DATA SHEET SILICON TRANSISTOR 2SC4186 UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4186 is an NPN silicon epitaxial transistor intended for use in millimeters as a UHF oscillator and a mixer in a tuner of a TV receiver. The device


    Original     		PDF 2SC4186 2SC4186 transistor NEC b 882 transistor NEC b 882 p NEC 2562 NPN SILICON EPITAXIAL TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD669/A NPN EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A 1 TO-92 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified


    Original     		PDF 2SD669/A 2SB649/A 2SD669 2SD669A QW-R201-049 150mA 2SD669) 2SD669A)

    2sb649

    Abstract: 2sb649a 2SB669
    Text: UTC 2SB649 /A PNP EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A 1 TO-92 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified


    Original     		PDF 2SB649 2SB669/A 2SB649A QW-R201-048 2SB669

    Untitled

    Abstract: No abstract text available
    Text: 2SD965W NPN Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 2SD965W TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM : 0.75 Collector current ICM : 5 1.EMITTER W Tamb=25 C 2. COLLECTOR 3. BASE A


    Original     		PDF 2SD965W 270TYP 050TYP 01-Jun-2002

    2sd669

    Abstract: 2sd669a 2sb649a
    Text: UTC 2SD669/A NPN EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A 1 TO-92NL 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified


    Original     		PDF 2SD669/A 2SB649/A O-92NL 2SD669 2SD669A QW-R211-011 2sb649a

    BF495

    Abstract: BF495 transistor
    Text: _ BF495 N AMER PHILIPS/DISCRETE . DbE D ^ =53=131 001H3QS D ' r-2/-/7 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 variant intended for h.f. applications in radio and television receivers; it is especially recommended for f.m. tuners, i.f. amplifiers in a.m./f.m. receivers where a low transistor


    OCR Scan     		PDF BF495 001H3QS emi2312 53T31 DD13313 bbS3T31 7Z62763 7Z08226 BF495 BF495 transistor

    bf 507 transistor

    Abstract: No abstract text available
    Text: bsc d Hi aaastos oqdhsi3 a h is ie g T - 3 I- Z / NPN Silicon RF Transistor SIEMENS AKT I EN GE SE LLS CH A F BF 507 o- °4513 BF 507 is an NPN silicon planar RF transistor in TO 92 plastic package 10 A 3 DIN 41868 . The transistor is particularly intended for use in VHF amplifiers, VHF mixers and VHF/UHF


    OCR Scan     		PDF Q62702-F571 bf 507 transistor

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC4185 UHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4185 is an NPN silicon epitaxial transistor intended for use as a UHF oscillator and a mixer in a tuner of a TV receiver. The device


    OCR Scan     		PDF 2SC4185 2SC4185 MAXIM484

    transistor CD 910

    Abstract: IEI-1213 MEI-1202 MF-1134 uPA1426 darlington transistor for audio power application npn darlington array EL120 EM202
    Text: SILICON TRANSISTOR ARRAY / P 1 A 4 2 6 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION The,uPA1426 is NPN silicon epitaxial Darlington Power Transistor PACKAGE DIMENSION (in m illim eters) A rray that built in 4 circu its designed for driving solenoid,


    OCR Scan     		PDF uPA1426 PA1426H transistor CD 910 IEI-1213 MEI-1202 MF-1134 darlington transistor for audio power application npn darlington array EL120 EM202

    nec 2571

    Abstract: nec 2571 4 pin 9522 transistor C 4804 transistor
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4185 UHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4185 is an NPN silicon epitaxial transistor intended for use as a UHF oscillator and a mixer in a tuner of a TV receiver. The device


    OCR Scan     		PDF 2SC4185 2SC4185 nec 2571 nec 2571 4 pin 9522 transistor C 4804 transistor