Untitled
Abstract: No abstract text available
Text: TP0610N2 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)1.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)4.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)6.0 Minimum Operating Temp (øC)-55
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TP0610N2
Junc-Case20
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mosfet cross reference
Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is
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T0-92
options4206A
ZVN4206C
ZVN4206E
ZVN4306A
TN2106K1
VN2210N3
TN0606N3
TN0606N6
mosfet cross reference
pj 929 diode
pj 1229 diode
BSS250
VN0109N5
pj 66 diode
pj 929
BSS295 "direct replacement"
BSS295 "cross reference"
pj 69 diode
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TP0606N5
Abstract: TP0610N3 TP0610N2 TP0606 TP0606N2 TP0606N3 TP0606N6 TP0610 TP0610N5 Tp0606N7
Text: TP0606 TP0610 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / RDS ON BVDGS (max) Order Number / Package ID(ON) (min) VGS(th) (max) TO-39 TO-92 TO-220 Quad P-DIP Quad C-DIP* DICE† -60V 3.5Ω -1.5A -2.4V TP0606N2
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TP0606
TP0610
O-220
TP0606N2
TP0606N3
TP0606N5
TP0606N6
TP0606N7
TP0606ND
-100V
TP0606N5
TP0610N3
TP0610N2
TP0606
TP0606N2
TP0606N3
TP0606N6
TP0610
TP0610N5
Tp0606N7
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2N6659
Abstract: 2N6660 2N6661 TN0102N2 TN0104N2 TN0110N2 TN0520N2 TN0606N7 VN0106N7 VN13
Text: DMOS /HVCMOS Standard Product Flow Wafer Fab Assembly QC Photomasks and Substrates Saw and Visual Wafer Fabrication QC Visual Inspection 5 QA Plant Clearance Die orders only QC Finished Wafer Inspection Die Attach QC Die Attach Monitor Wafer Backside Process
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VN1310N2
TN0110N2
VN2206N2
TN0520N2
VN2210N2
TN0606N7
VN2222NC
TN0610N2
VP0104N7
TP0104N2
2N6659
2N6660
2N6661
TN0102N2
TN0104N2
TN0110N2
TN0520N2
TN0606N7
VN0106N7
VN13
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TP0610N3
Abstract: TP0606N5 TP0606 TP0606N3 TP0610 TP0610N2
Text: TP0606 TP0610 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / RDS ON BVDGS (max) Order Number / Package ID(ON) (min) VGS(th) (max) TO-39 TO-92 TO-220 -60V 3.5Ω -1.5A -2.4V — TP0606N3 TP0606N5 -100V 3.5Ω -1.5A
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TP0606
TP0610
O-220
TP0606N3
TP0606N5
-100V
TP0610N2
TP0610N3
14-pin
TP0610N3
TP0606N5
TP0606
TP0606N3
TP0610
TP0610N2
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VQ1000N7
Abstract: VN0109N9 VC0106N7 MIL-STD-750 TN0606N7 TP0610N2 Diode SJ TQ3001N7 Transistor SJ VP0109N2
Text: DMOS High Reliability Products The following products are available with High Reliability processing per test methods and flows of MIL-STD-750 and MIL-STD-883. For ordering purposes, add the process flow prefix to the device number as shown in the following examples:
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MIL-STD-750
MIL-STD-883.
VN0109N9
VC0106N7
2N6660
TN0104N2
TP0104N2
TP0610N2
VN0104N9
VQ1000N7
VN0109N9
VC0106N7
TN0606N7
TP0610N2
Diode SJ
TQ3001N7
Transistor SJ
VP0109N2
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HV50530PG
Abstract: hv9910p-g TN0604N3 HV5808PJ VN2460N8-G HV-801 HV801 VP0120N5 VN0360N5 TN0520N3
Text: SUPERTEX INC - OBSOLETE PRODUCT LISTING [JANUARY 2011] Obsolete Part Number 2N6659 2N7007 AN0332CG AP0332CG BSS123 DN2535N2 DN2540N2 DN2620N3 DN2624N3 DN2625K6-G DN2635N3 DN2640N3 HV110K4-G HV111K4 HV1516P HV1616P HV1616PJ HV1816P HV1816PJ HV20220GA HV20220P
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2N6659
2N7007
AN0332CG
AP0332CG
BSS123
DN2535N2
DN2540N2
DN2620N3
DN2624N3
DN2625K6-G
HV50530PG
hv9910p-g
TN0604N3
HV5808PJ
VN2460N8-G
HV-801
HV801
VP0120N5
VN0360N5
TN0520N3
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TP06A
Abstract: No abstract text available
Text: TP06A ^ Supertex inc- Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BV qgs ^DSfON If BVDSS/ max) V Order Number / Package g s (Ui ) (max) -60 V 3 .5 n -1.5A -2.4V -100V 3.5Î2 -1.5A -2.4V TO-39
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TP06A
TP0606N2
TP0610N2
TP0606N3
TP0610N3
O-220
TP0606N5
TP0610N5
TP0606N6
TP0606N7
TP06A
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TP0606N5
Abstract: No abstract text available
Text: TP0606 TP0610 S u p e r t e x in c . Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs If Ordering Information Order Num ber / Package B W B V jx -s ^DS ON ^GS(lh) (max) (max) TO-39 TO-92 TO-220 -60V 3 .5 ft -1.5A -2.4V — TP0606N3 TP0606N5 -100V
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TP0606
TP0610
-100V
TP0606N3
TP0610N3
O-220
TP0606N5
TP0610N2
TP0606/TP0610
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Untitled
Abstract: No abstract text available
Text: TP0606 TP0610 Law Threshold mm\ g « « « P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^D S O N ^D(ON) ^G S (th ) b v dgs (max) (min) (max) TO-39 TO-92 TO-220 Quad P-DIP Quad C-DIP* -60V 3.5Q -1.5A -2.4V
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TP0606
TP0610
TP0606N2
TP0610N2
TP0606N3
TP0610N3
O-220
TP0606N5
TP0610N5
TP0606N6
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TP0606N5
Abstract: TP0610 TP0606N3 TP0610N2 TP0610N5
Text: TP0606 TP0610 Supertex inc. M Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS/ ^DS ON ' d (ON) ^GSfth) Bv dgs (max) (min) (max) TO-39 TO-92 TO-220 Quad P-DIP Quad C-DIP* -60V 3.5Π-1.5A -2.4V
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TP0606
TP0610
-100V
TP0606N2
TP0610N2
TP0606N3
TP0610N3
O-220
TP0606N5
TP0610N5
TP0610
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