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    TO220F Price and Stock

    Nextgen Components TO220FMDD7N65F

    MOSFET TO-220F N 650V 7A
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    DigiKey TO220FMDD7N65F Tube 1,000
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    Nextgen Components TO220FMDD4N65F

    MOSFET TO-220F N 650V 4A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TO220FMDD4N65F Tube 1,000
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    Nextgen Components TO220FMD12N65F

    MOSFET TO-220F N 650V 12A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TO220FMD12N65F Tube 1,000
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    Nextgen Components TO220FMD10N65F

    MOSFET TO-220F N 650V 10A
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    DigiKey TO220FMD10N65F Tube 1,000
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    Vishay Intertechnologies VS-20ETS08-M3

    Rectifiers 20A 800V Single Die Com Anode
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI Europe VS-20ETS08-M3 8,000
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    Find more TO220F price and stock on Findchips.com

    TO220F Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TO-220F Fairchild Semiconductor Discrete Products Original PDF
    TO-220F NXP Semiconductors AN11172 - Mounting instructions for SOT78 (TO-220AB); SOT186A (TO-220F) Original PDF
    TO220FH STMicroelectronics TO220FH Original PDF
    TO-220FP Central Semiconductor 8&16 Amp Schottky Rectifiers Original PDF
    TO-220FP Continental Device India Thru-hole Fully Isolated Plastic Package Original PDF
    TO-220FP Continental Device India NPN EPITAXIAL PLANAR SILICON DARLINGTON TRANSISTOR Original PDF
    TO-220FP Hi-Sincerity Mocroelectronics N-Channel Power Field Effect Transistor Original PDF
    TO220FP Unknown Original PDF
    TO-220FP STMicroelectronics TRANSISTOR OUTLINE PACKAGE Original PDF
    TO220FP-5 Unknown Original PDF
    TO220FP-5V5 Unknown Original PDF
    TO-220 FULLPAK Package International Rectifier Case Outline and Dimensions Original PDF

    TO220F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PSMN4

    Abstract: No abstract text available
    Text: TO -2 20F PSMN4R6-100XS N-channel 100V 4.6 mΩ standard level MOSFET in TO220F SOT186A Rev. 1 — 3 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial,


    Original     		PDF PSMN4R6-100XS O220F OT186A) PSMN4

    Untitled

    Abstract: No abstract text available
    Text: PACKAGE DIMENSIONS TO220F 4Pin Straight Type 10.0±0.3 4.5±0.3 6.5±0.3 2.8±0.3 2.8±0.3 2.4 25.0M IN 9.5±0.3 Ø3.2±0.1 2.55±0.3 0.9 10.7±0.3 1.5 0.65±0.1 1 2 3 2.54 2.54 2.54 4 0.5±0.1 UNIT : mm Ver.2003-08-29


    Original     		PDF O220F

    Untitled

    Abstract: No abstract text available
    Text: KA5M0280R S P S P S TO220F-4L The SPS product family is specially designed for an off-line SMPS with minimal external components. The SPS consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed oscillator, under


    Original     		PDF KA5M0280R O220F-4L

    Untitled

    Abstract: No abstract text available
    Text: パッケージ外形図 TO220F 3Pin 2.8±0.3 4.7±0.3 2.8±0.3 6.5±0.3 10.1±0.3 4.8±0.3 9.5±0.3 Ø 3.2±0.1 1.3 2.55±0.3 12.5M IN 1.7 +0.12 0.65 -0.10 2.54 2.54 +0.15 0.7 -0.10 単位 : mm


    Original     		PDF O220F

    SI-3002KWF

    Abstract: SI-3003KWF
    Text: 1-1-3 Multi-Output Type Regulator ICs SI-3000KWF Series 2-Output, Low Dropout Voltage Linear Regulator ICs •Features ■Absolute Maximum Ratings • Compact full-mold package equivalent to TO220F (Ta=25°C) Ratings Parameter DC Input Voltage • Output current: 1.0A x 2


    Original     		PDF SI-3000KWF O220F) SI-3002KWF/SI-3003KWF SI-3002KWF SI-3003KWF

    Untitled

    Abstract: No abstract text available
    Text: BUJD203AX NPN power transistor with integrated diode Rev. 01 — 27 September 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT186A TO220F full pack plastic package.


    Original     		PDF BUJD203AX OT186A O220F)

    P9NB60

    Abstract: P9NB60FP
    Text: STP9NB60 STP9NB60FP  N - CHANNEL 600V - 0.7Ω - 9A TO-220/TO220FP PowerMESH MOSFET TYPE ST P9NB60 ST P9NB60FP • ■ ■ ■ ■ V DSS R DS on ID 600 V 600 V < 0.8 Ω < 0.8 Ω 9.0 A 9.0 A TYPICAL RDS(on) = 0.7 Ω EXTREMELY HIGH dv/dt CAPABILITY


    Original     		PDF STP9NB60 STP9NB60FP O-220/TO220FP P9NB60 P9NB60FP P9NB60FP

    AOTF409

    Abstract: AOTF409L
    Text: AOTF409 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOTF409/L uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the TO220FL package, this device is well suited for high


    Original     		PDF AOTF409 AOTF409/L O220FL AOTF409 AOTF409L O-220FL

    Untitled

    Abstract: No abstract text available
    Text: TO -2 20F PSMN5R6-100XS N-channel 100V 5.6 mΩ standard level MOSFET in TO220F SOT186A Rev. 2 — 26 September 2011 Preliminary data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C.


    Original     		PDF PSMN5R6-100XS O220F OT186A)

    c05 10 48 diode

    Abstract: FME-230A
    Text: 100V, 30A Schottky barrier diode in TO220F package FME-230A •Absolute maximum ratings Parameter Ratings Unit ■Electrical characteristics Conditions Parameter Ratings Unit Ta = 25°C Conditions VRM 100 V VF 0.85 V IF =15A IF(AV) 30 A IR 1.5max mA VR =VRM


    Original     		PDF O220F FME-230A 150max c05 10 48 diode FME-230A

    Mosfet

    Abstract: SSF2N60F mosfet 600V 100A
    Text: SSF2N60F 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 3.6ohm(typ.) ID 2A TO220F Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSF2N60F O220F p600V Mosfet SSF2N60F mosfet 600V 100A

    Mosfet

    Abstract: SSF10N60F
    Text: SSF10N60F 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 0.8ohm(typ.) ID 10A TO220F Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced trench MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSF10N60F O220F dev60F Mosfet SSF10N60F

    Mosfet

    Abstract: SSF11NS65F
    Text: SSF11NS65F 650V N-Channel MOSFET Main Product Characteristics VDSS 650V RDS on 0.36ohm(typ.) ID 11A TO220F Marking and Pin Schematic Diagram Assignment Features and Benefits  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge


    Original     		PDF SSF11NS65F 36ohm O220F SSF11NS65F Mosfet

    Mosfet

    Abstract: SSF13N50F
    Text: SSF13N50F 500V N-Channel MOSFET Main Product Characteristics VDSS 500V RDS on 0.41Ω(typ.) ID 13A TO220F Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced Process Technology Special designed for PWM, load switching and general purpose applications


    Original     		PDF SSF13N50F O220F Mosfet SSF13N50F

    FME-210B

    Abstract: sanken CF35 Sanken catalog
    Text: Schottky Barrier Diode FME-210B April. 2007 •General Description ■Package-TO220F FME-210B is a High Voltage 150V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ●DC-DC converters


    Original     		PDF FME-210B Package---TO220F FME-210B 150Vguarantee D01-012EA-070322 sanken CF35 Sanken catalog

    sanken lot number

    Abstract: B105 CF35 FMXJ-2164S low forward voltage fast diode
    Text: Ultra-Fast-Recovery Rectifier Diode FMXJ-2164S September, 2005 •Package-TO220F ■General Description FMXJ-2164S employs JBS structure*, i.e. the combined structure of SBD and FRD. In addition, together with our proprietary lifetime control technology, Ultra fast recovery, Low loss and


    Original     		PDF FMXJ-2164S Package---TO220F FMXJ-2164S D01-001EA-050912 sanken lot number B105 CF35 low forward voltage fast diode

    FMXA-2153S

    Abstract: 2153S sanken lot number B105 CF35 SANKEN power supply Sanken marking
    Text: Ultrafast Recovery Diode FMXA-2153S •General Description November, 2005 ■Package-TO220F Shorter trr at high temperature has been realized by employing the new life time control technology. This is the optimum characteristic as a high frequency rectifier FRD for FCC power supply, etc.


    Original     		PDF FMXA-2153S Package---TO220F D01-003EA-051128 FMXA-2153S 2153S sanken lot number B105 CF35 SANKEN power supply Sanken marking

    FMXA-1106S

    Abstract: XA1106 Diode XA1106 FMX-G26S sanken lot number B105 CF35 SANKEN power supply SANKEN smps
    Text: Ultrafast Recovery Diode FMXA-1106S •General Description November, 2005 ■Package-TO220F-2Pin Shorter trr at high temperature has been realized by employing the new life time control technology. This is the optimum characteristic as a fast recovery diode


    Original     		PDF FMXA-1106S Package---TO220F-2Pin D01-002EA-051128 FMXA-1106S XA1106 Diode XA1106 FMX-G26S sanken lot number B105 CF35 SANKEN power supply SANKEN smps

    sanken power transistor

    Abstract: CF35 FMEN-220A sanken DSA0016518 Sanken catalog "Sanken Rectifiers"
    Text: Schottky Barrier Diode FMEN-220A March, 2006 •General Description ■Package-TO220F FMEN-220A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ● DC-DC converters


    Original     		PDF FMEN-220A Package---TO220F FMEN-220A 0E-01 D01-010EA-060310 sanken power transistor CF35 sanken DSA0016518 Sanken catalog "Sanken Rectifiers"

    fmw-2206

    Abstract: w 2206 schottky T T 2206 3pin -10-DC- IR sanken power transistor 615t
    Text: http://www.sanken-ele.co.jp SANKEN ELECTRIC FMW-2206 Mar. 2008 Schottky Barrier Rectifier General Description Package FMW-2206 is a Schottky Barrier Diode, and has achieved low TO220F 3Pin leakage current and low VF by selecting the best barrier metal. Applications


    Original     		PDF FMW-2206 FMW-2206 O220F 0E-01 0E-02 w 2206 schottky T T 2206 3pin -10-DC- IR sanken power transistor 615t

    TRANSISTOR 15n60c3

    Abstract: No abstract text available
    Text: SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.28 Ω ID 15 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP15N60C3, SPI15N60C3 SPA15N60C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31 SPP15N60C3 TRANSISTOR 15n60c3

    SI-8050RF

    Abstract: 8050rf SI 8050RF sanken tv 8050R TRANSISTOR sanken catalog SANKEN SI-1050S2 rk46 "Sanken Rectifiers"
    Text: DC/DC Step-Down Buck Converter IC SI-8050RF December 2005 •General Descriptions ■Package-TO220F-5 SI-8000RF series has protection circuits for overcurrent and overheating, and the functions required for switching regulators. Only four discrete components are required and it


    Original     		PDF SI-8050RF SI-8000RF Package---TO220F-5 SI-8033RF I02-003EA-051130 SI-8050RF 8050rf SI 8050RF sanken tv 8050R TRANSISTOR sanken catalog SANKEN SI-1050S2 rk46 "Sanken Rectifiers"

    Untitled

    Abstract: No abstract text available
    Text: NTE2679 Silicon NPN Transistor Power, High Voltage w/Built−In Damper Diode TO220F Type Package Features: D High Breakdown Voltage: VCBO = 1500V Min D Wide Area of Safe Operation D Built−In Damper Diode Applications: D Horizontal Deflection Output for TV or CRT Monitor


    Original     		PDF NTE2679 O220F 100mA, 750mA,

    11n60c3

    Abstract: transistor 11n60c3 SPA11N60C3E8185 SPI11N60C3 E8185
    Text: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220


    Original     		PDF SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 P-TO220-3-31 PG-TO220FP PG-TO262 PG-TO220 PG-TO-220-3-31 11n60c3 transistor 11n60c3 SPA11N60C3E8185 SPI11N60C3