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    TO206AF Search Results

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    SST4118

    Abstract: 2N4117A 2N4118A 2N4119A PN4117A PN4118A PN4119A SST4117 SST4119
    Text: 2N/PN/SST4117A Series Vishay Siliconix N-Channel JFETs 2N4117A PN4117A SST4117 2N4118A PN4118A SST4118 2N4119A PN4119A SST4119 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 4117 –0.6 to –1.8 –40 70 30 4118 –1 to –3


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    PDF 2N/PN/SST4117A 2N4117A PN4117A SST4117 2N4118A PN4118A SST4118 2N4119A PN4119A SST4119 SST4118 2N4117A 2N4118A 2N4119A SST4117 SST4119

    37654

    Abstract: PAD5 PAD Series JPAD50 PAD50 SSTPAD100 diode pico-amp PAD1 sstpad5
    Text: PAD/JPAD/SSTPAD Series Low-Leakage Pico-Amp Diodes PAD1 PAD5 PAD50 JPAD5 JPAD50 SSTPAD5 SSTPAD100 Product Summary Part Number IR Max pA PAD1 –1 PAD5/JPAD5/SSTPAD5 –5 PAD50/JPAD50 –50 SSTPAD100 –100 Features Benefits Applications D Negligible Circuit Leakage Contribution


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    PDF PAD50 JPAD50 SSTPAD100 PAD50/JPAD50 P-37654--Rev. 25-Jul-94 37654 PAD5 PAD Series JPAD50 PAD50 SSTPAD100 diode pico-amp PAD1 sstpad5

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


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    PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    2N4416 equivalent

    Abstract: 2n4416 transistor junction fet high frequency n-channel 2N4416 2N4416A
    Text: 2N4416A 2N4416A SMALL SIGNAL N–CHANNEL J–FET THAT IS DESIGNED TO PROVIDE HIGH PERFORMANCE AMPLIFICATION AT HIGH FREQUENCIES MECHANICAL DATA Dimensions in mm inches 4.95 (0.195) 4.52 (0.178) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) FEATURES


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    PDF 2N4416A 2N4416 2N4416A O-206AF) 2N4416 equivalent 2n4416 transistor junction fet high frequency n-channel

    BUZ901P

    Abstract: BUZ900P BUZ900 buz90a d44c3 buz94 BUZ77 BUZ345 DTS107 DTS410
    Text: STI Type: BUZ341 Notes: Breakdown Voltage: 200 Continuous Current: 33 RDS on Ohm: 0.07 Trans Conductance Mhos: 15 Trans Conductance A: 21 Gate Threshold min: 2.1 Gate Threshold max: 4.0 Resistance Switching ton: 60 Resistance Switching toff: 680 Resistance Switching ID: 3.0


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    PDF BUZ341 O-247 BUZ344 BUZ346 O-204AA/TO-3: DTS409 DTS410 BUZ901P BUZ900P BUZ900 buz90a d44c3 buz94 BUZ77 BUZ345 DTS107 DTS410

    SD5000N

    Abstract: SD5001 sd5001 siliconix SD5001N sd5400 aros SD5400CY SD5000 SILICONIX SD5000
    Text: T e m ic SD5000/5400 Series Siliconix N-Channel Lateral DMOS FETs SD5000I SD5400CY SD5000N SD5401CY SD5001N Product Summary Part Number v BR Ds Min (V) VGS(th) Max (V) SD5000I 20 1.5 SD5000N 20 1.5 SD5001N 10 1.5 SD5400CY 20 1.5 SD5401CY 10 1.5 For applications information see AN301, page 12-33.


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    PDF SD5000/5400 SD5000I SD5000N SD5001N SD5400CY SD5401CY AN301, SD5001 sd5001 siliconix sd5400 aros SD5000 SILICONIX SD5000

    Untitled

    Abstract: No abstract text available
    Text: TE LEDYNE COMPONENTS EäE a w b a e D o üü ía4 3 â m g T-31-25 SD2204 SEMICONDUCTOR P-CHANNEL ENHANCEMENT MODE D-MOS FET ORDERING INFORMATION Sorted Chips in Conductive Waffle Pack TO-220AA TO-92 Plastic Package Description SD2204CHP SD2204BD -400V, 7000


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    PDF T-31-25 SD2204 O-220AA SD2204CHP SD2204BD -400V, -500pA SD1201 -400V OT-143)

    to 206af

    Abstract: to-206af sd210 206af SD214 rings To206AF
    Text: 3bE D TELEDYNE COMPONENTS ÔIlTbQS 00077^0 S BITSC 'T-lÇ-lÇ WTELEDYNE COMPONENTS SD210 SD211 SD212 SD213 SD214 SD215 N-CHANNEL ENHANCEMENT-MODE DMOS FET SWITCHES FEATURES ABSOLUTE MAXIMUM RATINGS • ■ ■ V ds High Input to Output Isolation—120dB typical


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    PDF SD210 SD211 SD212 SD213 SD214 SD215 Isolation--120dB Drivers--SD210, SD211 Switches--SD214, to 206af to-206af 206af rings To206AF

    marking code vishay SILICONIX to-236

    Abstract: marking code vishay SILICONIX to-72 vishay siliconix code marking to-92
    Text: PAD/JPAD/SSTPAD Series Vishay Siliconix Low-Leakage Pico-Amp Diodes PAD1 PAD5 PAD50 JPAD5 SSTPAD5 JPAD50 SSTPAD100 PRODUCT SUMMARY lR Max pA PAD1 -1 PAD5/JPAD5/SSTPAD5 -5 PAD5Q/JPAD50 -50 SSTPAD100 -100 FEATURES BENEFITS APPLICATIONS • Ultralow Leakage: PAD1 <1 pA


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    PDF PAD50 PAD5Q/JPAD50 SSTPAD100 JPAD50 They50 SSTPAD100 SSTPAD5/100 S-04029--Rev. 04-Jun-01 marking code vishay SILICONIX to-236 marking code vishay SILICONIX to-72 vishay siliconix code marking to-92

    SFs SOT23

    Abstract: No abstract text available
    Text: 2 AE D • aTl?bUa QaQb4bM 1 H TELEDYNE CO M PO NENTS - T - 3 5 ~ - 2 S - TZ404 SEMICONDUCTOR _ N-CHANNEL ENHANCEMENT-MODE D-MOS FET ULTRA HIGH-SPEED LOW-COST SWITCH ORDERING INFORMATION TO-92 Pfaatic Package


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    PDF TZ404 OT-89 TZ404BD TZ404CY SO-16) OT-143) SFs SOT23

    SD306DE

    Abstract: SD306 lm 2435 t SD304DE TELEDYNE 1413 0007AD
    Text: TELEDYNE COMPONENTS 3bE D • fi^l?bOa 0007AD2 □ « T S C WTELEDYNE COMPONENTS SD304 SD306 N-CHANNEL ENHANCEMENT-MODE DUAL GATE DMOS FET FEATURES ABSOLUTE MAXIMUM RATINGS ■ ■ ■ ■ ■ ■ ■ Normally Off-Enhancement-Mode Operation Dual Gate with Gate Protective Diodes


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    PDF 0007AD2 SD304 SD306 -03pF Gain--17dBmin. 500MHz SD306) 200MHz, SD306DE SD306 lm 2435 t SD304DE TELEDYNE 1413 0007AD

    digital controlled attenuator

    Abstract: d82 sot-23 Teledyne Semiconductor CDG4460 DB3 5T
    Text: 2flE » • awboa Doot-3is h m TELEDYNE COMPONENTS CDG4460 SEMICONDUCTOR 6-BIT VIDEO FREQUENCY DIGITAL CONTROLLED ATTENUATOR ORDERING INFORMATION 16-Pln Ceram ic Package | CPG4460J FEATURES APPLICATIONS ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Data Latch


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    PDF CDG4460 16-Pln CPG4460J 40MHz CDG4460J OT-143) digital controlled attenuator d82 sot-23 Teledyne Semiconductor CDG4460 DB3 5T

    CHIP SM 4108

    Abstract: SM 4108 sm 4109 un 5111 IC
    Text: TELEDYNE COMPONENTS 2flE D m öWbQE 0Ü0L.3Q7 7 M CDG2214 S E M IC O N D U C T O R HIGH SPEED ANALOG SWITCH ORDERING INFORMATION 8-Pin Ceramic Dip Package 13 :• — ■- 8-Pin Plastic Dip (Package 8) One SPST Switch Industrial Temperature Range C0G2214BJ


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    PDF CDG2214 C0G2214BJ CDQ2214AK 100MHz 250MHz OT-143) CHIP SM 4108 SM 4108 sm 4109 un 5111 IC

    2N4416

    Abstract: SST4416
    Text: Tem ic 2N4416/2N4416A/SST4416 Semiconductors N-Channel JFETs Product Summary P art Number V GS<off V) V (B R )G S S M i n ( V ) 2N 4416 -< 6 -3 0 2N 4416A - 2 .5 t o - 6 SST4416 -£ 6 g ft M in (mS) lo ss (mA) 4 .5 5 -3 5 4 .5 5 -3 0 4 .5 5 Features Benefits


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    PDF 2N4416/2N4416A/SST4416 SST4416 2N4416/A, 2N4416/2N4 S-52424--Rev. 14-Apr-97 2N4416

    s t u 309d

    Abstract: AMI Semiconductor socket 771 C451 4308B TLC 771
    Text: SÖE D T EL ED Y N E COMPONENTS m Ö T 1 7 tü £ ÜQGb 3 Q I b CDG308, CDG309 CDG4308, CDG4309 SE M IC O N D U C T O R QUAD MONOLITHIC SPST CMOS/D-MOS ANALOG SWITCHES ORDERING INFORMATION s o -« S u ite * Mount Pacfcìa* O rw * b tlc tt mrtrc , Gomm ^W Tefnp.FÄng«


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    PDF CDG308, CDG309 CDG4308, CDG4309 16-PSl CD630a0J CDQ308BJ CDG309BJ 16-Pfo CDG303BK s t u 309d AMI Semiconductor socket 771 C451 4308B TLC 771

    ss 7941

    Abstract: No abstract text available
    Text: EÒE TELEDYNE COMPONENTS D a ii7 b a a — OGOb4Qc] 4 • r T-29-25 SD1106 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION SD1106CHP SD1106DD SD1106AD Sorted Chips In Waffte Pack TO-2Q6AA TO-18 Package TO-237 Packaae ' FEATURES


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    PDF T-29-25 SD1106 O-237 SD1106CHP SD1106DD SD1106AD DO-16) OT-143) ss 7941

    SD215DE-2

    Abstract: SD215DE vishay
    Text: SD211DE-2/213DE-2/215DE-2 Vishay Siliconix N-Channel Lateral DMOS FETs Available Only In Extended Hi-Rel Flow PRODUCT SUMM ARY Part Number V(BH)DS M in (V) v GS(th) Max (V) rDS(on) Max (Q ) Crss Max (pF) SD211DE-2 30 1.5 4 5 V GS= 1 0 V 0.5 2 SD213DE-2


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    PDF SD211DE-2/213DE-2/215DE-2 SD211DE-2 SD213DE-2 SD215DE-2 S-02889--Rev. 21-Dec-00 SD215DE-2 SD215DE vishay

    Untitled

    Abstract: No abstract text available
    Text: DMCD N-Channel _ Depletion-Mode MOSFET in c o r p o r a te d DEVICE TYPE PACKAGE Single TO-72 TO-206AF SD2100 Single Chip • Available as DMCD1CHP TYPICAL CHARACTERISTICS Depletion Mode - Drain Current & On-Reslstance vs. Gate-Source Cutoff Voltage


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    PDF O-206AF) SD2100 -----10V.

    Untitled

    Abstract: No abstract text available
    Text: t e l e d y n e eòe c o m p o n e n t s m D 000^ 44? a i i T t a a 1 SD5 1 0 0 , SD5 1 0 1 SEMICONDUCTOR _ ~7Z & 7 - / / ' N-CHANNEL ENHANCEMENT-MODE QUAD D-MOS FET ANALOG SWITCH ARRAYS ORDERING INFORMATION Sorted Chips In Waffle Pack SD5100CHP


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    PDF 14-Pin SD5100CHP SD5100N SD5101CHP SD5101N Drivers--SD5100 Drivers--SD5101 SD5100 SO-16) OT-143)

    JR 3610

    Abstract: RT 083 206af 44464
    Text: TELEDYNE COMPONENTS - 2ÖE D Mi ÛTiTtOE 000 ^40^ b • ■ -T-29-25 — cfTlHJlß2l0\7zi V P 0 8 0 8 , V P 1 00 8 SEMICONDUCTOR P-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION Sorted CWp* tn Wsffla Pack TO-226AA (TO-82 Plastic Package


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    PDF ----------------T-29-25 O-226AA O-237 808CHP VP08Q8L VP1008CHP VP1008L VP1008M -100\i VP1008 JR 3610 RT 083 206af 44464

    Untitled

    Abstract: No abstract text available
    Text: jre s ft 3N163 SERIES P-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY B O T T O M VIEW TO -7 2 TO-206AF PART NUM BER V (BR|DSS 3N163 -40 250 -50 3N164 -30 300 -50 "W 1 • d (A) 1 2 3 4 Performance Curves: MRA DRAIN G ATE SUBSTR ATE, C A S E SO URCE


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    PDF 3N163 O-206AF) 3N164

    2N3307 MOTOROLA

    Abstract: 2N3307 2N3308 GE-17
    Text: M O T OR OL A SC X S T R S /R F la E ° I b3t?2S l1 000^351 fe, | 2N3307 2N3308 CASE 20-03, STYLE 10 TO-72 TO-206AF M A X IM U M RATINGS Symbol 2N3307 2N3308 Unit VCEO 35 25 Vdc Colfector*Emitt6r Voltage Vc es 40 30 Vdc Collector-Base Voltage VCBO 40 30


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    PDF 2N3307 2N3308 2N3308 O-206AF) 2N3307 MOTOROLA GE-17

    2N3909

    Abstract: 2N3909A
    Text: MOTORGLA SC XSTRS/R F 12E 0 I b3b?SS4 OQflbblb 3 | 2N3909, A CASE 20-03, STYLE 5 TO-72 TO-206AF 3 Drain MAXIMUM RATINGS Symbol Value Drain-Source Voltage Rating Vd S -2 0 Vdc Drain-Gate Voltage Vd G -2 0 Vdc Vg SR 20 Vdc Reverse Gate-Source Voltage Forward Gate Current


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    PDF 2N3909, O-206AF) 2N5460 2N3909 2N3909A 2N3909A

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


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    PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845