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    TO114 PACKAGE Search Results

    TO114 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    TO114 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PT-8502

    Abstract: MT-1042 pt-9504 2N5928 TO114 1042 TO114 package PPS-250 TO63 package PT-7501
    Text: Click on the underlined number to see specs on the part or package. Please contact the company for more information on other parts and packages. Part Number 70 AMPS PT-7501 PT-7502 PT-7503 PT-7509 PT-3512 Voltage Package 100 120 150 200 325 TO-63 TO-63 TO-63


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    PDF PT-7501 PT-7502 PT-7503 PT-7509 PT-3512 PT-7504 PT-7505 PT-7506 PT-7510 PT-7507 PT-8502 MT-1042 pt-9504 2N5928 TO114 1042 TO114 package PPS-250 TO63 package PT-7501

    LT082

    Abstract: LT081 LT089 LT081S SML55405 transistors 1U BUR20 TC15U800
    Text: POWER SILICON TRANSISTORS Item Number •c Part Number Manufacturer Type Max hFE fT ICBO Max t0N Max on ON Min Hz) (A) (s) 300 325 350 400 400 400 400 425 425 450 700 625 230 300 625 885 1 7k 350 530 350 V(BR)CEO Max (A) PD r <CE)Mt Max (Ohms) Toper Max


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    PDF SDT55960 SML55462 PTC6683 2SD642 SML55464 D60T4040 D62T4040 SDT5825 SDT5855 SDT5826 LT082 LT081 LT089 LT081S SML55405 transistors 1U BUR20 TC15U800

    NSP5665

    Abstract: sat 1205
    Text: Bipolar Power Transistors Page 1 of 12 Next Page Home Package Device Type VCEO sus Volts IC (max) Amps PD@ 25° C Watts fT MHZ NPN TO-39 2N1479 * 40 1.5 20/[email protected]/4 [email protected]/.02 5 1.5 NPN TO-39 2N1480 * 55 1.5 20/[email protected]/4 [email protected]/.02 5 1.5 NPN TO-39 2N1481 *


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    PDF 2N1479 2N1480 2N1481 2N1482 2N1483 2N1484 2N1485 2N1486 O-254 NSP6340 NSP5665 sat 1205

    TO63 package

    Abstract: 2N5250 2N3265 transistor 114 2N5539 2N3150 2N3266 2N3847 2N4002 2N4003
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS 1*FE@ Ic/ V ce (min/max @ A/V) VcE(sat) @ I c/I b (V @ A/A) p“ d * WATTS Ìt (MHz) NPN TO-63 2N3265 90 20 25-55@15/2 l@20/2 100 20 2N3266 60 20 20-80@15/3


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    PDF 2N3265 2N3266 2N3846 2N3847 2N4002 2N4003 2N5539 2N6046 2N6047 2N6048 TO63 package 2N5250 transistor 114 2N3150

    NPN 200 VOLTS 20 Amps POWER TRANSISTOR

    Abstract: 2N3021 2n3223 2N3589 NPN 20 Amps POWER TRANSISTOR to63 MT27 NPN 90 Amps POWER TRANSISTOR to63 2N3025 2NXXXX TO63 package
    Text: r ^ 3 *t3 SILICON TRANSISTOR C O R P _ 8 8 0 0 0 7 9 2 DE lflES40ea O O O O T T S b flfl NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type Polarity lcMax Amps VCECKSUS) Volts Package Type Polarity . ^ 33^77 lc Max Amps VCEO(SUS)


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    PDF flES40ea rr33T77 2N2812 2N2813 2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 NPN 200 VOLTS 20 Amps POWER TRANSISTOR 2N3021 2n3223 2N3589 NPN 20 Amps POWER TRANSISTOR to63 MT27 NPN 90 Amps POWER TRANSISTOR to63 2N3025 2NXXXX TO63 package

    TO63 package

    Abstract: TRANSISTOR C 2570 TO114 package 2n3150 2N3265 transistor 2n4866 2N5251 2N5539 2N6048 2N5927 JAN
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE NPN TO-63 La Ì DEVICE TYPE d i A T * Tc = 100°C 1*FE@ Ic/ VcE min/max @ A/V VcE(sat) @ Ic^Ib (V @ A/A) p“ d* fr WATTS (MHz) 2N3265 90 20 25-55@15/2 1@20/2 100 20 2N3266 60 20 20-80@ 15/3


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    PDF 2N3265 2N3266 2N3846 2N3847 2N4002 2N4003 2N5539 2N6046 2N6047 2N6048 TO63 package TRANSISTOR C 2570 TO114 package 2n3150 transistor 2n4866 2N5251 2N5927 JAN

    PTB501

    Abstract: TO114 package powertech
    Text: “BIG IDEAS IN BIG POWER ” M H PowerTech • 200 AMPERES PT-B501 P T -650 2 SILICON IMPIM TRANSISTORS MAXIMUM RATINGS SYMBOL Collector-Base Voltage V CBO Collector-Emitter Voltage PT-6501 PT-6502 80V 100 V 60V 80V 10V 10V V CEO Emitter-Base Voltage V EBO


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    PDF PT-B501 PT-6501 O-114 PT-6502 O-114 200mA, PT-G502 PTB501 TO114 package powertech

    2N5385

    Abstract: 2NXXXX 2N5349 2N5480 2N5672 2N5675 2N5348 2N5384 TO114 package 2N5388
    Text: K lr » □ □ □ ° Q ru ru X 0» <0 Q. S E _ » < Polarity Ln u> CO K m =a o o 0 0 0 0 0 CO00 00 0 0 O O O O O CO CD 00 00 00 O O O O O 00 O O CD CD O O O O O 0 0 0 0 0 IO 10 to to 10 O O O O O in to 10 to to OOOOO to IO to Ö Ö O O O O O OOOOO OOOOO


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    PDF flS5402a 2N5348 O-111 2N5349 2N5384 2N5385 2NXXXX 2N5480 2N5672 2N5675 TO114 package 2N5388

    2N3017

    Abstract: No abstract text available
    Text: SILICON NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N2812 2N2813 2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 2N2821 2N2822 2N2823 2N2824 2N2825 2N2858 2N2859 2N2877 2N2878 2N2879 2N2880 2N2881 2N2882 2N2892 2N2893 2N2911 2N2983 2N2984


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    PDF 2N2812 2N2813 2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 2N2821 2N2822 2N3017

    PT-S501

    Abstract: powertech
    Text: “BIG IDEAS IN 200 AM PERES F T -6501 P T -65 0 2 S ILICO N IMPINI T R A N S IS T O R S MAXIMUM RATINGS PT-6501 PT-6502 80V 100V 60V 80V 10V 10V 200A 200A 100A 100 A 350W 350W 200W 200W -65 to 200° C -65 to 200°C -65 to 200°C -65 to 200° C SYMBOL Collector-Base Voltage


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    PDF PT-6501 O-114 PT-6502 O-114 300usec. PT-S501 powertech

    Untitled

    Abstract: No abstract text available
    Text: 17E D • "BIG IDEAS IN DG0G311 M ■ Il BIG POWER ■ PowerTech POWERTECH INC 200 A M P ER ES T-53-»5 -6501 PT-B502 ft SILICON NPN TRANSISTORS SYMBOL MAXIMUM RATINGS Collector-Base Voltage PT-6501 PT-6502 80V 100V 60V 80V 10V 10V V CBO Collector-Emitter Voltage


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    PDF DG0G311 T-53-Â PT-B502 PT-6501 PT-6502 O-114 300usec. DDDD312 FT-6502

    Untitled

    Abstract: No abstract text available
    Text: BIPOLAR NPN PLANAR POWER TRANSISTORS AMPS hFE min/max m •c < < o PEAK o O CO LU 1 O J > o m > DEVICE TYPE PACKAGE VCE sat max VOLTS ■c @ 'b A A TO-63 2N3265 90 20.0 25- 55 15.0/2.0 1.0 20.0/2.0 O I« 2N3266 60 20.0 20- 80 15.0/3.0 1.6 20.0/2.0 ÎA jl


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    PDF 2N3265 2N3266 2N3597 2N3598 2N3599 2N4002 2N4003 2N4210 2N6060 2N6215

    Untitled

    Abstract: No abstract text available
    Text: Z CL CL CL CL C L Z Z Z Z Z CL CL CL CL CL CL CL CL CL Z Z Z Z Z Q- CL CL CL CL z zzzz Q- CL CL CL CL 2N4910 2N4911 2N4912 2N4913 2N4914 CL CL CL CL CL Z Z Z Z Z CL CL CL CL CL Z Z Z Z Z zzzzz CL CL CL CL CL Z Z Z Z Z zzzzz o o o o o c l cl o dd z zz z ‘


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    PDF O-39/TO-5 2N4910 2N4911 2N4912 2N4913 2N4914 O-114 O-111

    2n5480

    Abstract: No abstract text available
    Text: K □ □ □ ° Q ru ru lr X 0» <0 Q. S E _ » < Polarity Ln u> CO K m =a o o CD r- CO CD CD CD IO lO Ó Ó Ó Ó Ó 1— 1 — 1— f— I— to to CO CO to Ó Ó Ó Ó Ó f— 1— 1— 1— 1— TO-3 TO-39/TO-5 TO-111 TO-61 TO-3 » TO-3 T0-3 TO-59 T0-111


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    PDF O-39/TO-5 O-111 T0-111 O-111 24UNF 2n5480

    2N2464

    Abstract: TO-59 Package TO114 package SIS 672 2N2210 transistor 2N2210 TO111 package TO61 package 2N3725 ultra low noise NPN transistor
    Text: SME D GENERAL TRANSISTOR CORP BTaöODl 00QG07M Q General Transistor Corporation 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 SMALL SIGNAL TRANSISTORS NPN General Purpose Typ» No, Plot (mW) VCEO


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    PDF 3T5fl001 2N720A 2N915 2N916 2N956 2N2221 2N2221A 2N2222 2N2222A 2N3700 2N2464 TO-59 Package TO114 package SIS 672 2N2210 transistor 2N2210 TO111 package TO61 package 2N3725 ultra low noise NPN transistor

    2n5347

    Abstract: a/TO111 2n5100
    Text: 8254022 S I L I CON T R A N S I S T O R CORP 88D 0 0 7 9 4 “ûû D Ì T | a 2 5 4 0 2 2 00007=14 0 NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Polarity lc Max Amps 2N4999 2N5000 2N5001 2N5002 2N5003 PNF NPN PNP NPN PNP 2.0 2.0 2.0 5,0


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    PDF 2N4999 2N5000 2N5001 2N5002 2N5003 O-111 2N5004 2N5005 2N5006 2n5347 a/TO111 2n5100

    PowerTech

    Abstract: TO114 package TO114
    Text: BIG :D£.Av BIG POWER ” • PowerTech PACKAGING *111 POWERTECH INNOVATIVE PACKAGING In addition to the flexible packaging capabilities shown above TO-63, TO-114, Powerblock Power Modules , Powertech has developed a new state-of-the-art package through significant effort in design technology. The new


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    PDF O-114, PowerTech TO114 package TO114

    Untitled

    Abstract: No abstract text available
    Text: 17E ]> • BIG IDEAS IN BIG POWER” M H TETÖTbM 0GD033D fi ■ PowerTech POldERTECH INC TIO AMPERES 'T -S 3 -IS PT-4503 PT-4504 HIGH VOLTAGE SILICON IMPIM TRANSISTOR TYPE PT-4503 PT-4504 Collector-Base Voltage, Vq b q 450V 500V Collector-Em itter Voltage, V q ^ q


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    PDF 0GD033D PT-4503 PT-4504 O-114

    PT4504

    Abstract: PT4503
    Text: üiG IDEAS in BIG POWER ” • Power!ech 110 AMPERES PT-4503 PT-4504 HIGH VOLTAGE SILICON IMPIM TR AN SIS TO R TYPE PT-4503 PT-4504 Collector-Base Voltage, V q q q 450V 500V C ollector-E m itter Voltage, V q ^ q 400V 450V ABSOL UTE MAXIMUM RATINGS 10V Em itter-Base Voltage, V ^gQ


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    PDF PT-4503 PT-4504 PT-4503 O-114 PT4504 PT4503

    PTB501

    Abstract: PT6501
    Text: -É t ó I Ù E À 5 ir< - BIG POWER " P o w • e r T e c h SC O A M P E R E S PT - 6501 P T -B 5 0 2 SILICON NPN TRANSISTORS PT-6501 PT-6502 V CBO eov 100 V V CEO aov


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    PDF PT-65Ã PT-6501 PT-6502 20CHI O-114 PT-B501 lc-100A, VCE01r 1c-200mA, lBl-10A PTB501 PT6501

    Untitled

    Abstract: No abstract text available
    Text: BIG POWER” M M • PowerTecn HO AMPERES PT-4503 PT-4504 HIGH VOLTAGE SILICON IMPIMTRANSISTOR TYPE PT-4503 PT-4504 Collector-Base Voltage, Vq q q 450V 500V C ollector-E m itter Voltage, V q ^ q 400V 450V ABSO LU TE MAXIMUM RATINGS 10V Emitter-Base Voltage, VEB q


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    PDF PT-4503 PT-4504 PT-4503 O-114 PT-4504

    transistor PT 4500

    Abstract: No abstract text available
    Text: 17 E D • TS'JÛTbM □□□□331 T POliJERTECH INC "BIG IDEAS IN BIG POWER” ■ PowerTecri 150AMPERES PT-4500 T-SVIS HIGH VOLTAGE SILICON NPN TRANSISTOR FEATURES V c E s a t . 0.75 @ 100 A hF E .


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    PDF PT-4500 300/Ltsec 100/iA transistor PT 4500

    Untitled

    Abstract: No abstract text available
    Text: - "EKTiBEKSlFi- PowerTech 200 AMPERES PT - 6 5 0 1 PT-65D2 SILICON NPN THAN SI STOPS MAXIMUM RATINGS SYMBOL Collector-Base1Voltage Collector-Emitter VcjltagK Ertfiitser Baw Voltage Peak Collector Current PT-S501


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    PDF PT-65D2 PT-S501 PT-6502 TQ-114 O-114

    KSD 166

    Abstract: LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801
    Text: Hi-Rel PLANAR POW ER-2 AMP NPN • ii lll ii TYPE CASE REAKDOWNilllllliH if i VOLTAGES Veb ' VCE 2N 1252 TO-5 VCB 30 2N 1253 TO-5 30 20 2N 1506 60 40 2N 1506A TO-5 TO-5 2N 1714 TO-5 80 60 2N 1716 TO-5 80 90 90 2N 1718 MT-13 90 60 2N 1720 MT-13 90 2N 1889 TO-5


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    PDF MT-13 KSD 166 LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801