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    TN25 Search Results

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    TN25 Price and Stock

    Diodes Incorporated ZXTN25012EFHTA

    TRANS NPN 12V 6A SOT23-3
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    DigiKey ZXTN25012EFHTA Digi-Reel 8,736 1
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    ZXTN25012EFHTA Cut Tape 8,736 1
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    ZXTN25012EFHTA Reel 6,000 3,000
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    Newark ZXTN25012EFHTA Cut Tape 1,520 1
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    Avnet Asia ZXTN25012EFHTA 26 Weeks 3,000
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    New Advantage Corporation ZXTN25012EFHTA 18,000 1
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    Lattice Semiconductor Corporation LCMXO2280C-3FTN256C

    IC FPGA 211 I/O 256FTBGA
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    DigiKey LCMXO2280C-3FTN256C Tray 5,384 1
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    STMicroelectronics TN2540-600G-TR

    SCR 600V 25A D2PAK
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    DigiKey TN2540-600G-TR Cut Tape 2,165 1
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    TN2540-600G-TR Digi-Reel 2,165 1
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    TN2540-600G-TR Reel 2,000 1,000
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    Mouser Electronics TN2540-600G-TR 1,464
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    STMicroelectronics TN2540-600G-TR 1,464 1
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    TME TN2540-600G-TR 692 1
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    Ameya Holding Limited TN2540-600G-TR 627
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    Avnet Silica TN2540-600G-TR 4,000 16 Weeks 1,000
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    EBV Elektronik TN2540-600G-TR 16 Weeks 1,000
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    Diodes Incorporated ZXTN25020DZTA

    TRANS NPN 20V 6A SOT89-3
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    DigiKey ZXTN25020DZTA Cut Tape 880 1
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    ZXTN25020DZTA Digi-Reel 880 1
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    Newark ZXTN25020DZTA Cut Tape 900 1
    • 1 $0.415
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    Avnet Silica ZXTN25020DZTA 11,000 10 Weeks 1,000
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    New Advantage Corporation ZXTN25020DZTA 9,000 1
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    Lattice Semiconductor Corporation LFE3-35EA-8FTN256C

    IC FPGA 133 I/O 256FTBGA
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    DigiKey LFE3-35EA-8FTN256C Tray 328 1
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    Flip Electronics LFE3-35EA-8FTN256C 35,110
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    TN25 Datasheets (72)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TN25 STMicroelectronics 25A SCRs Original PDF
    TN2501 Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TN2501 Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TN2501N8 Supertex N-Channel Enhancement-Mode Vertical DMOS FET Original PDF
    TN2501N8-G Microchip Technology Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 18V 400MA SOT89-3 Original PDF
    TN2501ND Supertex N-Channel Enhancement-Mode Vertical DMOS FET Original PDF
    TN2504 Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TN2504N8 Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TN2504N8 Supertex N-Channel Enhancement-Mode Vertical DMOS FET Original PDF
    TN2504N8-G Microchip Technology Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 0.89A SOT89-3 Original PDF
    TN2504ND Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TN2504ND Supertex N-Channel Enhancement-Mode Vertical DMOS FET Original PDF
    TN2510 Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TN2510N8 Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TN2510N8 Supertex N-Channel Enhancement-Mode Vertical DMOS FET Original PDF
    TN2510N8-G Microchip Technology Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 730MA SOT89-3 Original PDF
    TN2510ND Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TN2510ND Supertex N-Channel Enhancement-Mode Vertical DMOS FET Original PDF
    TN2511 ifm efector ELECTRONIC TEMPERATURE SENSOR; 1 Original PDF
    TN2520N8-G Supertex P-Channel Enhancement Mode Vertical DMOS FETs Original PDF

    TN25 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TN2504

    Abstract: No abstract text available
    Text: TN2504 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2504 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si


    Original
    PDF TN2504 TN2504 A020309

    TN2535

    Abstract: No abstract text available
    Text: TN2535 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2535 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si


    Original
    PDF TN2535 TN2535 A020309

    SCR 25A 600V

    Abstract: TN25 SCR TN 22 1500
    Text: TN25 and TYNx25 Series 25A SCRs STANDARD MAIN FEATURES: A Symbol Value Unit IT RMS 25 A VDRM/VRRM 600 to 1000 V G K A A IGT 40 mA K A G K DESCRIPTION D2PAK (TN25-G) The TYN / TN25 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a


    Original
    PDF TYNx25 TN25-G) O-220AB SCR 25A 600V TN25 SCR TN 22 1500

    Untitled

    Abstract: No abstract text available
    Text: TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original
    PDF TN2524 125pF DSFP-TN2524 B111908

    Untitled

    Abstract: No abstract text available
    Text: TN2504 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original
    PDF TN2504 125pF DSFP-TN2504 A091208

    Untitled

    Abstract: No abstract text available
    Text: TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original
    PDF TN2524 125pF TN2524 O-243AA OT-89) O-243, DSFP-TN2524 B122707

    Untitled

    Abstract: No abstract text available
    Text: TN25 and TYNx25 Series 25A SCRs STANDARD MAIN FEATURES: A Symbol Value Unit IT RMS 25 A VDRM/VRRM 600 to 1000 V G K A A IGT 40 mA K A G K DESCRIPTION D2PAK (TN25-G) The TYN / TN25 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a


    Original
    PDF TYNx25 TN25-G) O-220AB

    Untitled

    Abstract: No abstract text available
    Text: TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling


    Original
    PDF TN2524 125pF DSFP-TN2524 B022309

    Untitled

    Abstract: No abstract text available
    Text: TN2529 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex TN2529 is a low threshold enhancementmode transistor that utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device


    Original
    PDF TN2529 TN2529 125pF DSFP-TN2529 A091608

    RCM4000

    Abstract: No abstract text available
    Text: TN255 Rabbit 4000 Advanced 16-bit Mode Auxiliary I/O Bug A bug has recently been identified in the Rabbit 4000 that can result in inadvertently executing a data byte as if it were an instruction under certain circumstances. This will only occur when the advanced 16-bit


    Original
    PDF TN255 16-bit 16-bit RCM4000

    fet sot-89 marking code

    Abstract: FET SOT-89 N-Channel tn5l fet sot-89 product marking MARKING CODE BV sot-89 TN2504
    Text: TN2504 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original
    PDF TN2504 125pF DSFP-TN2504 A012409 fet sot-89 marking code FET SOT-89 N-Channel tn5l fet sot-89 product marking MARKING CODE BV sot-89 TN2504

    TN2535

    Abstract: TN2535N8
    Text: TN2535 TN2535 Low Threshold New Product N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) Order Number / Package 350V 10Ω 2.0V 1.0A TN2535N8 * Same as SOT-89. TO-243AA* Product supplied on 2000 piece carrier tape reels.


    Original
    PDF TN2535 TN2535N8 OT-89. O-243AA* 200mA, 200mA TN2535 TN2535N8

    p-channel DMOS

    Abstract: P024 TN2502ND TN2504 TN2504ND TP2502N8
    Text: TN2502/TN2504 TN2502 TN2504 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS ON VGS(th) ID(ON) BVDGS (max) (max) (min) TO-243AA* DICE† 20V 1.0Ω 1.6V 4.0A — TN2502ND 40V 1.0Ω 1.6V 4.0A


    Original
    PDF TN2502/TN2504 TN2502 TN2504 O-243AA* TN2502ND TP2502N8 TN2504ND OT-89. p-channel DMOS P024 TN2502ND TN2504 TN2504ND TP2502N8

    TL25/15/10 3E6

    Abstract: PHILIPS toroidal core 3f3 PHILIPS toroidal core 3c90 PHILIPS toroidal core TN25/15/10- 3e25 TL25/15/10 toroid core Toroid 3F3 philips 3E25 philips 3f3 ferrite ring ferrite core
    Text: Philips Components Product specification Ferrite ring cores toroids TN25/15/10 RING CORES (TOROIDS) Effective core parameters SYMBOL PARAMETER VALUE UNIT Σ(I/A) core factor (C1) 1.23 mm−1 Ve effective volume 2944 mm3 Ie effective length 60.2 mm Ae effective area


    Original
    PDF TN25/15/10 CBW306 TL25/15/10-3E5 TL25/15/10-3E6 TL25/15/10 3E6 PHILIPS toroidal core 3f3 PHILIPS toroidal core 3c90 PHILIPS toroidal core TN25/15/10- 3e25 TL25/15/10 toroid core Toroid 3F3 philips 3E25 philips 3f3 ferrite ring ferrite core

    TN2540-800G

    Abstract: 7478 j k
    Text: TN2540, TXN625 TYN625, TYN825 Standard 25 A SCRs Features A • On-state rms current, IT RMS 25 A ■ Repetitive peak off-state voltage, VDRM/VRRM 600 to 800 V G K ■ Triggering gate current, IGT 40 mA ■ Insulated package TO-220AB ins – Insulating voltage 2500 V rms


    Original
    PDF TN2540, TXN625 TYN625, TYN825 O-220AB UL1557 E81734) TXN625RG TN2540-x00G) TN2540-800G 7478 j k

    TN2529

    Abstract: No abstract text available
    Text: TN2529 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2529 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si


    Original
    PDF TN2529 TN2529 A020309

    TN2524

    Abstract: No abstract text available
    Text: TN2524 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2524 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si


    Original
    PDF TN2524 TN2524 A020309

    Untitled

    Abstract: No abstract text available
    Text: TN2510 Su pertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVuss / BVoas Rds on (max) V oS(lh) (max) *D(ON) (min) 100V 1.5ft 2.0V 3.0A Order Number / Package TO-243AA* Diet TN2510N8 TN2510ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels.


    OCR Scan
    PDF TN2510 O-243AA* TN2510N8 TN2510ND OT-89. 125pFmax.

    25SI

    Abstract: No abstract text available
    Text: TN2524 Supertexinc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Orderina Informâtion RdS ON (max) VûS(th) (max) 240V 6.0ft 2.0V Order Numb e r / Package If BVoss / BVcxss TO-243AA* Diet 1.0A TN2524N8 TN2524ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels,


    OCR Scan
    PDF TN2524 O-243AA* TN2524N8 TN2524ND OT-89. 125pF 25SI

    VP1304N2

    Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
    Text: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND


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    PDF 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 DN2535ND DN2540N2 DN2540N3 DN2540N5 DN2540N8 VP1304N2 TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2

    Untitled

    Abstract: No abstract text available
    Text: T N 25D Lji Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering information BVDSS/ Order Number / Package f*DS ON ^ G S (th ) ' d (ON) (max) (max) (min) TO-243AA* DICE+ 350V 120 1.8V 1.0A — TN2535ND 400V 12£i 1.8V 1.0A TN2540N8


    OCR Scan
    PDF O-243AA* TN2540N8 TN2535ND TN2540ND OT-89. TN25D

    TN25L

    Abstract: No abstract text available
    Text: ^ Supertex me. T N 25 L Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information B Vdss / ^DS O N ^G S fth ) • d (ON) b v dgs (max) (max) (min) 20V 1.0Q 1.6V 4.0 A 40V 1.0CÌ 1.6V 4.0A Order Number / Package TO-243AA*TN2504N8


    OCR Scan
    PDF O-243AA* TN2502ND TN2504ND TN2504N8 OT-89. TN25L

    Untitled

    Abstract: No abstract text available
    Text: TN2535 I Ljà Supertex. inc. I l L J U U 254° W Lr Low Thresh old N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ ^DS ON ^GS(th) l[)(ON) b v dgs (max) (max) (min) 350V 12a 1.8V 400V 12Q 1.8 V Order Number / Package TO-243AA*


    OCR Scan
    PDF TN2535 O-243AA* TN2540N8 TN2535ND TN2540ND OT-89,

    Untitled

    Abstract: No abstract text available
    Text: ^ TN2502 Supertex ine. TN2504 Low T hresh old N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss/ ^D S O N ^ G S (th | I d (ON) b v dgs (max) (max) (min) TO-243AA* DICEt 20V 1.0Q 1.6V 4.0A — TN2502ND 40V 1.0Q


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    PDF TN2502 O-243AA* TN2504N8 TN2502ND TN2504ND OT-89. struc10 TN2502/TN2504