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    Toshiba America Electronic Components TK10A60E,S5X

    MOSFET N-CH 600V 10A TO220SIS
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    TK10A60E Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TK10A60E,S4X Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V TO220SIS Original PDF
    TK10A60E,S5X Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V TO220SIS Original PDF

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    TK10A60E

    Abstract: tk10a60
    Text: TK10A60E MOSFETs Silicon N-Channel MOS π-MOS TK10A60E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) (3)


    Original     		PDF TK10A60E O-220SIS TK10A60E tk10a60