RO3010
Abstract: Z14B C14A thermistor r5t MRF374 470 860 mhz PCB transistor R1A C14B r1a transistor transistor z2b
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device
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MRF374
31JUL04
31JAN05
RO3010
Z14B
C14A
thermistor r5t
470 860 mhz PCB
transistor R1A
C14B
r1a transistor
transistor z2b
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thermistor r5t
Abstract: chip resistor 1206 c19a S1239 MOTOROLA P C3B Kemet bc17a GX-0300-55 R7B Connector RO3010
Text: MOTOROLA MRF373 MRF373S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 60 W, 470 – 860 MHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this
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MRF373S
MRF373
31JUL04
31JAN05
thermistor r5t
chip resistor 1206
c19a
S1239
MOTOROLA P
C3B Kemet
bc17a
GX-0300-55
R7B Connector
RO3010
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RO3010
Abstract: j352 transistor j352 bc17a VJ2225Y
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF374A
RO3010
j352
transistor j352
bc17a
VJ2225Y
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Z14b
Abstract: Z10A RO3010 Z11A VJ2225Y C14A thermistor C11 Z11B C12A C12B
Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides http://mot–sps.com/rf/sg/sg.html for scheduled introduction dates.
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MRF374/D
MRF374
Z14b
Z10A
RO3010
Z11A
VJ2225Y
C14A
thermistor C11
Z11B
C12A
C12B
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RO3010
Abstract: C14A z14b
Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device
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MRF374/D
MRF374
MRF374/D
RO3010
C14A
z14b
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MRF374A
Abstract: marking c14a l1a marking
Text: Freescale Semiconductor Technical Data Rev. 4, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF374A
marking c14a
l1a marking
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RO3010
Abstract: RF POWER VERTICAL MOSFET
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF374
MRF374A
RO3010
RF POWER VERTICAL MOSFET
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MRF373 PUSH PULL
Abstract: c19a chip resistor 1206 rogers C14A MRF373 MRF373 print circuit B07T MRF373S R7B Connector
Text: MOTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides http://mot–sps.com/rf/sg/sg.html for scheduled introduction dates.
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MRF373/D
MRF373
MRF373S
MRF373
MRF373 PUSH PULL
c19a
chip resistor 1206
rogers
C14A
MRF373 print circuit
B07T
MRF373S
R7B Connector
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z14b
Abstract: RO3010 C14A C12A C12B C13B MRF374 r1a transistor VJ2225Y Z14A
Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this
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MRF374/D
MRF374
z14b
RO3010
C14A
C12A
C12B
C13B
MRF374
r1a transistor
VJ2225Y
Z14A
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Z14b
Abstract: Z10A Z12B Z10B z11b r1a transistor C14A RO3010 C12A C12B
Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides http://mot–sps.com/rf/sg/sg.html for scheduled introduction dates.
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MRF374/D
MRF374
Z14b
Z10A
Z12B
Z10B
z11b
r1a transistor
C14A
RO3010
C12A
C12B
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Vj3640Y
Abstract: transistor L1A
Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device
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MRF374/D
MRF374
Vj3640Y
transistor L1A
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C13B
Abstract: z14b c18a C14A C12A C12B MRF374 RO3010 Z10A RF POWER VERTICAL MOSFET 1000 w
Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET ARCHIVED 2005 Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this
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MRF374/D
MRF374
C13B
z14b
c18a
C14A
C12A
C12B
MRF374
RO3010
Z10A
RF POWER VERTICAL MOSFET 1000 w
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MRF373
Abstract: RO3010 A419 MRF373 PUSH PULL C14A MRF373 print circuit P1210 MRF373S atc 174 BUY13
Text: MOTOROLA The RF MOSFET Line MRF373 MRF373S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 470 – 860 MHz, 60 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this
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MRF373
MRF373S
MRF373)
MRF373
DEVICEMRF373/D
RO3010
A419
MRF373 PUSH PULL
C14A
MRF373 print circuit
P1210
MRF373S
atc 174
BUY13
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Untitled
Abstract: No abstract text available
Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET ARCHIVED 2005 Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this
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MRF374/D
MRF374
28rola,
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MRF373R1
Abstract: C19B C14A rf push pull mosfet power amplifier B07T MRF373SR1 chip resistor 1206 ATC 700 B 101 G P
Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these
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MRF373/D
MRF373R1
MRF373SR1
MRF373R1
C19B
C14A
rf push pull mosfet power amplifier
B07T
MRF373SR1
chip resistor 1206
ATC 700 B 101 G P
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c19a
Abstract: motorola rf power chip resistor 1206 BUY13 C14A LDMOS push pull MRF373 MRF373 PUSH PULL MRF373R1 MRF373SR1
Text: MOTOROLA RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment.
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MRF373R1
MRF373SR1
MRF373R1
MRF373/D
c19a
motorola rf power
chip resistor 1206
BUY13
C14A
LDMOS push pull
MRF373
MRF373 PUSH PULL
MRF373SR1
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transistor L1A
Abstract: 1206 capacitor chip pads layout rogers capacitor bc17a 470 860 mhz PCB
Text: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF374A/D
MRF374A
MRF374A/D
transistor L1A
1206 capacitor chip pads layout
rogers capacitor
bc17a
470 860 mhz PCB
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transistor j352
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this
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MRF374A/D
MRF374A
transistor j352
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RO3010
Abstract: motorola balun variable capacitor rogers capacitor 1606 mosfet C14A MRF374 MRF374A C12A C12B
Text: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF374A/D
MRF374A
RO3010
motorola balun
variable capacitor
rogers capacitor
1606 mosfet
C14A
MRF374
MRF374A
C12A
C12B
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balun 50 kW
Abstract: C14A C12A C12B C13B MRF374 MRF374A RO3010 Vishay Dale 800 ohm resistors
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF374A/D
MRF374A
balun 50 kW
C14A
C12A
C12B
C13B
MRF374
MRF374A
RO3010
Vishay Dale 800 ohm resistors
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marking c14a
Abstract: ATC - Semiconductor Devices transistor j239 04 6274 045 000 800
Text: MRF374A Rev. 4, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF374A
MRF374A
marking c14a
ATC - Semiconductor Devices
transistor j239
04 6274 045 000 800
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RO30
Abstract: mrf374
Text: Freescale Semiconductor Technical Data MRF374A Rev. 4, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF374A
RO30
mrf374
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sg 421 thermistor
Abstract: R03010 motorola balun motorola balun an 1982 hhsmith MRF374 RF POWER VERTICAL MOSFET 1000 w C14A motorola L6 C12A
Text: MOTOROLA O rder this docum ent by M RF374/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recomm ended for New Design. The next generation of higher performance products are in developm ent. Visit our online Selector Guides http://m ot-sps.com /rf/sg/sg.htm l for scheduled introduction dates.
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OCR Scan
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MRF374/D
MRF374/D
sg 421 thermistor
R03010
motorola balun
motorola balun an
1982 hhsmith
MRF374
RF POWER VERTICAL MOSFET 1000 w
C14A
motorola L6
C12A
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KSS 1206
Abstract: chip resistor 1206 MRF373 MRF373 print circuit GPS 112 C14A GX-0300-55 MRF373S Thermistor application
Text: MOTOROLA O rder this docum ent by M RF373/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recomm ended for New Design. The next generation of higher performance products are in developm ent. Visit our online Selector Guides http://m ot-sps.com /rf/sg/sg.htm l for scheduled introduction dates.
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OCR Scan
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PDF
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MRF373/D
mrf373/d
KSS 1206
chip resistor 1206
MRF373
MRF373 print circuit
GPS 112
C14A
GX-0300-55
MRF373S
Thermistor application
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