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    MRF374 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRF374 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF
    MRF374 Motorola RF Power Field-Effect Transistor Original PDF
    MRF374 Motorola MRF374 RF Power Transistor Original PDF
    MRF374 Motorola RF Power Field-Effect Transistor Scan PDF
    MRF374A Freescale Semiconductor RF Power Field Effect Transistors Original PDF
    MRF374A Freescale Semiconductor RF Power Field Effect Transistors Original PDF
    MRF374A Motorola RF POWER FIELD EFFECT TRANSISTOR Original PDF
    MRF374A Motorola 470-860 MHz, 130 W, 32 V Lateral N-Channel Broadband RF Power MOSFET Original PDF
    MRF374_D Freescale Semiconductor MRF374 470-860 MHz, 100 W, 28 V Lateral N-Channel Broadband RF Power MOSFET Original PDF

    MRF374 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Z14b

    Abstract: Z10A Z12B Z10B z11b r1a transistor C14A RO3010 C12A C12B
    Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides http://mot–sps.com/rf/sg/sg.html for scheduled introduction dates.


    Original     		PDF MRF374/D MRF374 Z14b Z10A Z12B Z10B z11b r1a transistor C14A RO3010 C12A C12B

    RO30

    Abstract: mrf374
    Text: Freescale Semiconductor Technical Data MRF374A Rev. 4, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374A RO30 mrf374

    C14A

    Abstract: MRF374A C12A C12B C13B MRF374 RO3010 j310 vishay J352 100WPEP
    Text: Freescale Semiconductor Technical Data Document Number: MRF374A Rev. 5, 5/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374A C14A MRF374A C12A C12B C13B MRF374 RO3010 j310 vishay J352 100WPEP

    Untitled

    Abstract: No abstract text available
    Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET ARCHIVED 2005 Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374/D MRF374 28rola,

    marking c14a

    Abstract: ATC - Semiconductor Devices transistor j239 04 6274 045 000 800
    Text: MRF374A Rev. 4, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374A MRF374A marking c14a ATC - Semiconductor Devices transistor j239 04 6274 045 000 800

    z14b

    Abstract: RO3010 C14A C12A C12B C13B MRF374 r1a transistor VJ2225Y Z14A
    Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374/D MRF374 z14b RO3010 C14A C12A C12B C13B MRF374 r1a transistor VJ2225Y Z14A

    RO3010

    Abstract: C14A z14b
    Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF374/D MRF374 MRF374/D RO3010 C14A z14b

    J352

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374A/D MRF374A MRF374A/D J352

    RO3010

    Abstract: Z14B C14A thermistor r5t MRF374 470 860 mhz PCB transistor R1A C14B r1a transistor transistor z2b
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF374 31JUL04 31JAN05 RO3010 Z14B C14A thermistor r5t 470 860 mhz PCB transistor R1A C14B r1a transistor transistor z2b

    transistor L1A

    Abstract: 1206 capacitor chip pads layout rogers capacitor bc17a 470 860 mhz PCB
    Text: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374A/D MRF374A MRF374A/D transistor L1A 1206 capacitor chip pads layout rogers capacitor bc17a 470 860 mhz PCB

    transistor j352

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374A/D MRF374A transistor j352

    Vj3640Y

    Abstract: transistor L1A
    Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF374/D MRF374 Vj3640Y transistor L1A

    RO3010

    Abstract: motorola balun variable capacitor rogers capacitor 1606 mosfet C14A MRF374 MRF374A C12A C12B
    Text: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374A/D MRF374A RO3010 motorola balun variable capacitor rogers capacitor 1606 mosfet C14A MRF374 MRF374A C12A C12B

    J239 mosfet transistor

    Abstract: L1AB
    Text: Freescale Semiconductor Technical Data Document Number: MRF374A Rev. 5, 5/2006 RF Power Field-Effect Transistor MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of


    Original     		PDF MRF374A MRF374A J239 mosfet transistor L1AB

    MRF374A

    Abstract: marking c14a l1a marking
    Text: Freescale Semiconductor Technical Data Rev. 4, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374A marking c14a l1a marking

    RO3010

    Abstract: RF POWER VERTICAL MOSFET
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374 MRF374A RO3010 RF POWER VERTICAL MOSFET

    Z14b

    Abstract: Z10A RO3010 Z11A VJ2225Y C14A thermistor C11 Z11B C12A C12B
    Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides http://mot–sps.com/rf/sg/sg.html for scheduled introduction dates.


    Original     		PDF MRF374/D MRF374 Z14b Z10A RO3010 Z11A VJ2225Y C14A thermistor C11 Z11B C12A C12B

    MRF374

    Abstract: transistor D 863
    Text: MRF374 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF374 is Designed for broadband commercial and industrial applications in 470 to 860 MHz band. PACKAGE STYLE .230 BAL FLG. FEATURES: • PG = 13.5 dB typ. at 100 W/875 MHz • ηD = 36 % Typical


    Original     		PDF MRF374 MRF374 transistor D 863

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF374A Rev. 5, 5/2006 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374A

    RF MOSFET

    Abstract: MRF374
    Text: Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 - 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374 IMD--05 R03010 RF MOSFET MRF374

    marking c14a

    Abstract: C14A C13B MRF374 MRF374A RO3010 C12A C12B Vishay Dale 10 ohm resistorS J352
    Text: Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374A marking c14a C14A C13B MRF374 MRF374A RO3010 C12A C12B Vishay Dale 10 ohm resistorS J352

    balun 50 kW

    Abstract: C14A C12A C12B C13B MRF374 MRF374A RO3010 Vishay Dale 800 ohm resistors
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374A/D MRF374A balun 50 kW C14A C12A C12B C13B MRF374 MRF374A RO3010 Vishay Dale 800 ohm resistors

    NI-650

    Abstract: MRF374
    Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET ARCHIVED 2005 Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374/D MRF374 NI-650 MRF374

    RO3010

    Abstract: j352 transistor j352 bc17a VJ2225Y
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374A RO3010 j352 transistor j352 bc17a VJ2225Y