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    Untitled

    Abstract: No abstract text available
    Text: ^ E D I B^ctronlc D««lgnc Inc. . Â IM IO I D iF O M Â T M Features TheEDI82136Cisa1,179,648bitAsynchroriousmemofy core with transparent address and enable latches in the advanced peripheral circuitry. This device is ideally suited for all x32 and x36 bit wide, high-performance memory sub­


    OCR Scan     		32Kx36 DQ0-DQ31 EDI82136C EDI82136C12GC EDI82136C15GC EDI82136C17GC EDI82136C20GC PDF

    Untitled

    Abstract: No abstract text available
    Text: ^E D I E D I8 2 1 3 6 C H /fif/j Performance Megabit SRAM Badronic o«ign. me. 32Kx36 Monolithic Asynchronous/Latched Address Monolithic Static RAM liF Û M Â T O Û i Features TheEDI82136Cisa1,179,648bitAsynchronousmemory core with transparent address and enable latches in the


    OCR Scan     		32Kx36 TheEDI82136Cisa1 648bitAsynchronousmemory EDI82136C, daparitydeselectconfrolforx32bitoperation EDI82136C EDI82136C12GC EDI82136C15GC EDI82136C17GC PDF

    Untitled

    Abstract: No abstract text available
    Text: ^EDI Electronic Designs tr>c. ' , transparent latches, dual polarity single enable, master write control, master output enable, four individual byte selects x8 orx9, andaparitydeselectcontrolforx32bitoperation. This feature provides flexible control over the device array during


    OCR Scan     		daparitydeselectcontrolforx32bitoperation A0-A14 32Kx18 DQ16-DQ31 EDI82136C EDI82136C20JB EDI82136C25JB EDI82136C30JB EDI82136C35JB PDF