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    Toshiba America Electronic Components EXCITESECOVER

    Tablet Cover |Toshiba EXCITESECOVER
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    Caplugs 99190942 (ALTERNATE: SEC-19)

    PlasticStaticDissiPativeCaP, ThreadedConn,1-3/16-(30,16mm)SEC-19,Box | Caplugs 99190942
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    Caplugs 99190952 (ALTERNATE: SEC-26)

    PlasticStaticDissiPativeCaP, ThreadedConn,1-5/8-(41,28mm)SEC-26,Box | Caplugs 99190952
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    Woodhead Molex 120257-0014 (ALTERNATE: YSR-22K4-TESE-C050)

    Safety Switch, 8mm, Teachable Code Type 4/PL e, IP69K, PVC 5m, Contrinex Series | Molex Woodhead/Brad 120257-0014
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    Siemens SECFUBLK2 (ALTERNATE: SECFUBLK2)

    2nd fuse blk assy. genII 1kva to 5kva ; SECFUBLK2 | Siemens SECFUBLK2
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    TESEC Datasheets Context Search

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    IGBT THEORY AND APPLICATIONS 400V

    Abstract: TEK 370A tesec IGBT THEORY AND APPLICATIONS bj transistor igbt high voltage pnp transistor 700v jfet curve tracer short circuit tracer schematic bipolar transistor tester AN10861
    Text: Application Note AN-1086 BVCES Testing Considerations for Ultra-thin wafer B B Depletion Stop Trench IGBTs By Chiu Ng, Al Diy, Alberto Fernandez, Vijay Bolloju Table of Contents Page


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    PDF AN-1086 1628/D. IGBT THEORY AND APPLICATIONS 400V TEK 370A tesec IGBT THEORY AND APPLICATIONS bj transistor igbt high voltage pnp transistor 700v jfet curve tracer short circuit tracer schematic bipolar transistor tester AN10861

    AN569 in Motorola Power Applications

    Abstract: RJR Resistor BASIC THERMAL MANAGEMENT OF POWER SEMICONDUCTORS AN1570 tesec manual MJF10012 tesec DV240 Manual Bill Roehr motorola Nippon capacitors SAGE
    Text: MOTOROLA Order this document by AN1570/D SEMICONDUCTOR APPLICATION NOTE AN1570 Basic Semiconductor Thermal Measurement Prepared by: Gary E. Dashney Motorola Semiconductor Products Sector Phoenix, Arizona INTRODUCTION This paper will provide the reader with a basic


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    PDF AN1570/D AN1570 AN1570/D* AN569 in Motorola Power Applications RJR Resistor BASIC THERMAL MANAGEMENT OF POWER SEMICONDUCTORS AN1570 tesec manual MJF10012 tesec DV240 Manual Bill Roehr motorola Nippon capacitors SAGE

    R-T curves RJC

    Abstract: motorola application note AN-569 tesec DV240 AN1028 AN-569 DV240 NDS9956
    Text: AN1028 April, 1996 Maximum Power Enhancement Techniques for SOT-223 Power MOSFETs Alan Li, Brij Mohan, Steve Sapp, Izak Bencuya, Linh Hong 1. Introduction As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of devices. Thus


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    PDF AN1028 OT-223 OT223 R-T curves RJC motorola application note AN-569 tesec DV240 AN1028 AN-569 DV240 NDS9956

    tesec DV240

    Abstract: AN1027 AN-569 DV240 NDS9956
    Text: AN1027 April, 1996 Maximum Power Enhancement Techniques for SuperSOTTM-8 Power MOSFETs Alan Li, Brij Mohan, Steve Sapp, Izak Bencuya, Linh Hong 1. Introduction As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of devices. Thus


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    PDF AN1027 tesec DV240 AN1027 AN-569 DV240 NDS9956

    R-PDSO-G14 footprint

    Abstract: gold embrittlement 100C A113 IPC-SM-782 anemometer tesec manual 9214-KT
    Text: Printed in U.S.A. 08–96 * SLIT115 PowerFLEX  Surface Mount Power Packaging SLIT115 September 1996 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor


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    PDF SLIT115 R-PDSO-G14 footprint gold embrittlement 100C A113 IPC-SM-782 anemometer tesec manual 9214-KT

    power tmos

    Abstract: 936G PR 751S K1 MARK 6PIN SOT-363 carrier chiller mc10116 MC10H210 mmsf5n03hd 0j sod-523 CASERM
    Text: Semiconductor Packaging and Case Outlines Reference Manual CASERM/D Rev. 1, Aug−2003  SCILLC, 2003 Previous Edition  2000 “All Rights Reserved’’ CASERM ChipFET is a trademark of Vishay Siliconix. POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.


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    PDF Aug-2003 power tmos 936G PR 751S K1 MARK 6PIN SOT-363 carrier chiller mc10116 MC10H210 mmsf5n03hd 0j sod-523 CASERM

    R-T curves RJC

    Abstract: AN1026 AN-569 DV240 NDS9956
    Text: N 2. Theory Alan Li, Brij Mohan, Steve Sapp, Izak Bencuya, Linh Hong When a device operates in a system under the steady-state condition, the maximum power dissipation is determined by the maximum junction temperature rating, the ambient temperature, and the junction-to-ambient


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    R-T curves RJC

    Abstract: MOSFET 12W tesec DV240 motorola application note AN-569 AN1029 AN-569 DV240 NDS9956
    Text: N AN1029 April, 1996 Maximum Power Enhancement Techniques for SO-8 Power MOSFETs Discrete POWER & Signal Technologies 2. Theory Alan Li, Brij Mohan, Steve Sapp, Izak Bencuya, Linh Hong When a device operates in a system under the steady-state condition, the maximum power


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    PDF AN1029 R-T curves RJC MOSFET 12W tesec DV240 motorola application note AN-569 AN1029 AN-569 DV240 NDS9956

    AN1028

    Abstract: AN-1028 DV240 fluke 52
    Text: National Semiconductor Application Note 1028 June 2001 INTRODUCTION As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of devices. Thus the purpose of this paper is to aid the user in


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    PDF OT-223 AN-1028 AN1028 AN-1028 DV240 fluke 52

    carrier chiller

    Abstract: BRIDGE RECTIFIER SMD oscilloscopes manual SOT-353 Mark va ECL Handbook smd diode Cathode is indicated by a blue band mar TO-204aa MICROSEMI PACKAGE OUTLINE Microsemi Catalog 2000 RCA 559 TO3 MECL System Design Handbook
    Text: CASERM/D Rev. 0, Sep-2000 Semiconductor Packaging and Case Outlines ON Semiconductor Reference Manual and Design Guide Semiconductor Packaging and Case Outlines Reference Manual and Design Guide CASERM/D Rev. 0, Sep–2000  SCILLC, 2000 “All Rights Reserved’’


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    PDF Sep-2000 r14525 carrier chiller BRIDGE RECTIFIER SMD oscilloscopes manual SOT-353 Mark va ECL Handbook smd diode Cathode is indicated by a blue band mar TO-204aa MICROSEMI PACKAGE OUTLINE Microsemi Catalog 2000 RCA 559 TO3 MECL System Design Handbook

    fluke 52 k/j thermometer

    Abstract: fluke 52 k/j Thermocouple tesec DV240 motorola application note AN-569 FLUKE 52 fluke 52 k/j tesec AN-569 DV240 FDC6329L
    Text: Rev D, October 1998 1 ° ° θ ° θ ° ° 2 θ θ ° θ ° θ θ ° Ω Ω ° ° Ω Ω θ µ Ω Ω 3 θ = + = ≈ + = ≈ − x = × + × τ 4 Figure 4. Measured FDC6329L Dynamic Waveforms Figure 5. SPICE verification on FDC6329L Dynamic Waveforms Figure 6. SPICE result of FDC6329L


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    PDF FDC6329L FDC6329L fluke 52 k/j thermometer fluke 52 k/j Thermocouple tesec DV240 motorola application note AN-569 FLUKE 52 fluke 52 k/j tesec AN-569 DV240

    tesec DV240

    Abstract: AN1029 AN-569 DV240 NDS9956 213 so8
    Text: AN1029 April, 1996 Maximum Power Enhancement Techniques for SO-8 Power MOSFETs Alan Li, Brij Mohan, Steve Sapp, Izak Bencuya, Linh Hong 1. Introduction As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of devices. Thus


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    PDF AN1029 tesec DV240 AN1029 AN-569 DV240 NDS9956 213 so8

    AN569 in Motorola Power Applications

    Abstract: motorola mosfet BASIC THERMAL MANAGEMENT OF POWER SEMICONDUCTORS MTP15N06V equivalent dpak DIODE ANODE COMMON motorola ir 722c motorola Power Applications Manual mtv32 DV240 AN1083
    Text: Thermal Compendium Table of Contents Abstracts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Basic Semiconductor Thermal Measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7


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    R-T curves RJC

    Abstract: AN1028 AN-569 DV240 NDS9956
    Text: N AN1028 April, 1996 Maximum Power Enhancement Techniques for SOT-223 Power MOSFETs Discrete POWER & Signal Technologies 2. Theory Alan Li, Brij Mohan, Steve Sapp, Izak Bencuya, Linh Hong When a device operates in a system under the steady-state condition, the maximum power


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    PDF AN1028 OT-223 OT-223 R-T curves RJC AN1028 AN-569 DV240 NDS9956

    AN1028

    Abstract: fluke 52 k/j thermometer tesec DV240 fluke 52 k/j Thermocouple AN-1028 AN-569 DV240 an-569 national
    Text: National Semiconductor Application Note 1028 June 2001 PDMAX t = [TJMAX − TA] / RθJA(t) Introduction As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of


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    PDF OT-223 AN-1028 AN1028 fluke 52 k/j thermometer tesec DV240 fluke 52 k/j Thermocouple AN-1028 AN-569 DV240 an-569 national

    9214-KT

    Abstract: powerflex mil Constantan bond wire R-PDSO-G14 footprint tesec manual D(R-PDSO-G14) Package powerflex 70 A113 IPC-SM-782 SLIT115A
    Text: PowerFLEX  Surface-Mount Power Packaging SLIT115A September 1996 – Revised February 1999 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information


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    PDF SLIT115A 15-Lead 15-Lead 9214-KT powerflex mil Constantan bond wire R-PDSO-G14 footprint tesec manual D(R-PDSO-G14) Package powerflex 70 A113 IPC-SM-782 SLIT115A

    R-PDSO-G14 footprint

    Abstract: NKT 275 transistor powerflex 9214-KT D(R-PDSO-G14) Package transistor ktc 1270 hot wire anemometer block diagram mil Constantan bond wire powerflex 70 100C
    Text: Printed in U.S.A. 08–96 * SLIT115 PowerFLEX  Surface Mount Power Packaging SLIT115 September 1996 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor


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    PDF SLIT115 R-PDSO-G14 footprint NKT 275 transistor powerflex 9214-KT D(R-PDSO-G14) Package transistor ktc 1270 hot wire anemometer block diagram mil Constantan bond wire powerflex 70 100C

    Mohan

    Abstract: AN1026 AN-569 DV240 NDS9956 motorola application note AN-569
    Text: AN1026 April, 1996 Maximum Power Enhancement Techniques for SuperSOTTM-6 Power MOSFETs Alan Li, Brij Mohan, Steve Sapp, Izak Bencuya, Linh Hong 1. Introduction As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of devices. Thus


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    PDF AN1026 Mohan AN1026 AN-569 DV240 NDS9956 motorola application note AN-569

    R-T curves RJC

    Abstract: tesec DV240 AN-569 DV240 NDS9956 AN1025 SuperSOTTM -3 Fluke 16 thermocouple FLUKE 52
    Text: AN1025 April, 1996 Maximum Power Enhancement Techniques for SuperSOTTM-3 Power MOSFETs Alan Li, Brij Mohan, Steve Sapp, Izak Bencuya, Linh Hong 1. Introduction As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of devices.


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    PDF AN1025 OT-23) R-T curves RJC tesec DV240 AN-569 DV240 NDS9956 AN1025 SuperSOTTM -3 Fluke 16 thermocouple FLUKE 52

    R-T curves RJC

    Abstract: FLUKE 381 AN1025 AN-569 DV240 NDS9956 tesec DV240 fluke 52 Mosfet DF 50
    Text: N 2. Theory Alan Li, Brij Mohan, Steve Sapp, Izak Bencuya, Linh Hong When a device operates in a system under the steady-state condition, the maximum power dissipation is determined by the maximum junction temperature rating, the ambient temperature, and the junction-to-ambient


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    PDF OT-23) OT-23 R-T curves RJC FLUKE 381 AN1025 AN-569 DV240 NDS9956 tesec DV240 fluke 52 Mosfet DF 50

    AN1027

    Abstract: AN-569 DV240 NDS9956 sot8
    Text: N 2. Theory Alan Li, Brij Mohan, Steve Sapp, Izak Bencuya, Linh Hong When a device operates in a system under the steady-state condition, the maximum power dissipation is determined by the maximum junction temperature rating, the ambient temperature, and the junction-to-ambient


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    Untitled

    Abstract: No abstract text available
    Text: T O SH IBA TM P47C337A/937A CM O S 4-BIT M ICRO CO N TRO LLER TMP47C337AN The47C 337A is based on the TLCS-47 CM OS series. The 47C337A has On-screen display OSD circuit to display bar which indicate channel or volum e on TV screen, A/D converter input,


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    PDF P47C337A/937A TMP47C337AN The47C TLCS-47 47C337A SD1P30 TMP47C937AE SDIP30 TMP47C337A/937A

    bb3500

    Abstract: 3527BM 3527AM 3527 TO99 package 3527CM BB3500E 3527 op amp Burr Brown 3527 BB-3500
    Text: B U R R -B R O W N 3527 Low Drift - Low Bias Current F E T Input O P E R A T IO N A L A M P L IF IE R FEATURES APPLICATIONS • LOWER PRICED • C URR ENT-TO-VOLTAGE CONVERSION • ULTRA-LOW DRIFT, 2^.M/°C, max • LONG TERM INTEGRATION • LOW INITIAL O F F S E T VO LTAG E, 250 m V, max


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    PDF 250mV. 250/uV bb3500 3527BM 3527AM 3527 TO99 package 3527CM BB3500E 3527 op amp Burr Brown 3527 BB-3500

    2U37

    Abstract: H1P transistor with three end QQ 8114 transistor 2N6985 2N6986 M11 marking transistor feedthru cap H1P transistor 4 pr 16 awg 3011 fe
    Text: I INCH-POUND I MIL-S-1950 0/584 25 Ju ly 1990 MILITARY SPECIFICATION prut rniinn rrnn nrwt r r oc.ru ourauuu I UK u l u u , nr- r\Ai ir r\ rnnif»t t t a « Kr ruM CK ik a n ^ i^ iu k , tinti ▼ i ta nu nrnt r\éin i r\in i ru ^ n -ru L L TYPES JANTX. JANTXV. ANO JANS. 2N6985 AND 2N6986


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    PDF MIL-S-1950 2N6985 2N6986 MIL-S-19500. 2U37 H1P transistor with three end QQ 8114 transistor 2N6986 M11 marking transistor feedthru cap H1P transistor 4 pr 16 awg 3011 fe