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Vishay Semiconductors TB9414VA-SF-F VS TB9414VA-SF-F Wafer Sawn on Foil
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Untitled Abstract: No abstract text available Text: TB9414VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength: λ = 940 nm	Original	PDF	TB9414VA TB9414VA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength:  = 940 nm	Original	PDF	TB9414VA 2002/95/EC 2002/96/EC TB9414VA 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength:  = 940 nm	Original	PDF	TB9414VA 2002/95/EC 2002/96/EC TB9414VA 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12
VISHAY Optoelectronics Abstract: FVOV6870 MIL-HDBK-263 Text: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength: λ = 940 nm	Original	PDF	TB9414VA 2002/95/EC 2002/96/EC TB9414VA 18-Jul-08 VISHAY Optoelectronics FVOV6870 MIL-HDBK-263
Untitled Abstract: No abstract text available Text: TB9414VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength: λ = 940 nm	Original	PDF	TB9414VA TB9414VA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
TB-94 Abstract: No abstract text available Text: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength:  = 940 nm	Original	PDF	TB9414VA 2002/95/EC 2002/96/EC TB9414VA 11-Mar-11 TB-94
FVOV6870 Abstract: MIL-HDBK-263 VISHAY Optoelectronics Text: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength: λ = 940 nm	Original	PDF	TB9414VA 2002/95/EC 2002/96/EC TB9414VA 18-Jul-08 FVOV6870 MIL-HDBK-263 VISHAY Optoelectronics
Untitled Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Bare Die Optoelectronics Bare Die Portfolio Infrared Emitters and Photo Detectors TABLE OF CONTENTS Introduction to Bare	Original	PDF	VMN-SG2200-1502