Untitled
Abstract: No abstract text available
Text: Current and Voltage Controls Current Transformer, 1-Phase AC Types TACO 110, TACO 200 • Cable/bus-bar type current transformer • Panel mounting facility • TACO 110: class 0.5, currents from 800 to 4000 A • TACO 200: class 0.5, currents from 1000 to 6000 A
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TACO110
TACO110:
TACO200:
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5P10
Abstract: TRANSFORMER CT 1A 5P10 current transformer CURRENT TRANSFORMER
Text: Accessories Current Transformer, 1-Phase AC Types TACO 110, TACO 200 • Cable/bus-bar type current transformer • Panel mounting facility • TACO 110: class 0.5, currents from 800 to 4000 A • TACO 200: class 0.5, currents from 1000 to 6000 A TACO 110
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TACO110
TACO110:
TACO200:
5P10
TRANSFORMER CT 1A
5P10 current transformer
CURRENT TRANSFORMER
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12273148-110
Abstract: 313C764-9 SC-X15111
Text: SERIES 77 SERIES 77 ENVIRONMENTAL SHRINK BOOTS TACOM-Approved Environmental Shrink Boots Expanded Cross-Reference: TACOM-to-Glenair Shrink Boot Part Numbers TACOM # Glenair Environmental Shrink Boots Now TACOM Approved, In-Stock and Ready for Immediate Shipment
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SPEC-01417-SC-X15112)
12273148-110
313C764-9
SC-X15111
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mentor robot
Abstract: LEGO
Text: Intel Corporation 2200 Mission College Blvd. P.O. Box 58119 Santa Clara, CA 95052-8119 News Release CONTACT: Rick Meeder Intel Corporation 253 371-8756 [email protected] William F. Walles Tacoma Urban League (253) 383-2007 [email protected] TACOMA URBAN LEAGUE SELECTED AS HOST ORGANIZATION FOR
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FR4 dielectric
Abstract: No abstract text available
Text: 856934 1842.5 MHz SAW Filter Applications General purpose wireless Wireless infrastructure 3G, 4G, Multi-standard Repeaters Product Features Functional Block Diagram Top view Usable bandwidth 75 MHz Low loss Excellent power handling Single-ended operation
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AGR19045XF
Abstract: No abstract text available
Text: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for
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AGR19045EF
Hz--1990
AGR19045XF
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TH 2190 HOT Transistor
Abstract: No abstract text available
Text: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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AGR21180EF
TH 2190 HOT Transistor
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vq80
Abstract: A40MX02 one time
Text: Revision 3 40MX and 42MX Automotive FPGA Families Features High Capacity Ease of Integration • Single-Chip Applications ASIC Alternative for Automotive • Up to 100% Resource Utilization and 100% Pin Locking • 3,000 to 54,000 System Gates • Deterministic, User-Controllable Timing
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12065G105AT2A
Abstract: j292 MRF7S18125 F 365 R A114 A115 AN1955 C101 JESD22 RF35
Text: Freescale Semiconductor Technical Data Document Number: MRF7S18125BH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125BHR3 MRF7S18125BHSR3 Designed for GSM and GSM EDGE base station applications with
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MRF7S18125BH
MRF7S18125BHR3
MRF7S18125BHSR3
MRF7S18125BHR3
12065G105AT2A
j292
MRF7S18125
F 365 R
A114
A115
AN1955
C101
JESD22
RF35
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sawtek 855916
Abstract: D622
Text: 855916 2441.8 MHz SAW Filter Applications For ISM applications Bluetooth Product Features Functional Block Diagram Top view Usable bandwidth 83.5 MHz High Attenuation Single-ended operation Ceramic Surface Mount Package SMP No Impedance matching required for operation at 50Ω
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50efore
sawtek 855916
D622
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MRF6S21140HR3
Abstract: MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors
Text: Freescale Semiconductor Technical Data Document Number: MRF6S21140H Rev. 5, 2/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
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MRF6S21140H
MRF6S21140HR3
MRF6S21140HSR3
MRF6S21140HSR3
AN1955
MRF6S21140H
D2080
Nippon capacitors
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RF35
Abstract: No abstract text available
Text: BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 01 — 4 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance
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BLF6G27-10;
BLF6G27-10G
ACPR885k
ACPR1980k
BLF6G27-10
BLF6G27-10G
RF35
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antifuse programming technology
Abstract: 40MX 42MX A40MX02 A40MX04 A42MX09 A42MX16 A42MX24 A42MX36 42MX24
Text: v6.0 40MX and 42MX FPGA Families Fe a t ur es High C apaci t y • • • • • • Commercial, Military Temperature, and MIL-STD-883 Ceramic Packages Single-Chip ASIC Alternative 3,000 to 54,000 System Gates Up to 2.5 kbits Configurable Dual-Port SRAM
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MIL-STD-883
35-Bit
antifuse programming technology
40MX
42MX
A40MX02
A40MX04
A42MX09
A42MX16
A42MX24
A42MX36
42MX24
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7C344-25
Abstract: C344 74HC CY7C344 Signal Path Designer C3445
Text: CY7C344 32-Macrocell MAX EPLD Features tional I/O pins communicate to one logic array block. In the CY7C344 LAB there are 32 macrocells and 64 expander product terms. When an I/O macrocell is used as an input, two expanders are used to create an input path. Even if all of the
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CY7C344
32-Macrocell
CY7C344
28-pin,
300-mil
28-pin
7C344-25
C344
74HC
Signal Path Designer
C3445
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ultra fast pulse generator
Abstract: 32P4938A
Text: SSI 32P4938A PR4ML Read Channel with 16/17 ENDEC w/Thermal Asperity Suppression March 1998 • 4 bit nibble and byte wide bi-directional NRZ data interfaces The part is a high performance BiCMOS read channel IC that provides all of the functions needed to
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32P4938A
100-lead
ultra fast pulse generator
32P4938A
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Untitled
Abstract: No abstract text available
Text: O K I semiconductor MSM6 8 1 4 ¿¿-Law MSM6 8 1 5 (A-Law) SINGLE CHIP COMBO CODEC WITH TIME SLOT ASSIGNMENT GENERAL DESCRIPTION The M S M 6 8 1 4 and M S M 6 8 1 5 are single ch ip C O M B O CODEC w ith tim e slo t assignm ent (TACODEC) w hich are fa b rica te d by O K I’s low pow er co n sum ption CM O S silico n gate technology.
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IV-C-67
MSM6814/15
IV-C-68
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DG548
Abstract: DG549 le4b U3825
Text: SIIICONIX INC OB 8 2 5 4 735 j j SILICONIX 3>lEJ S2SH73S □0123^7 T INC_ _ JD3E 1239<7_ D DG548/549 8-Channel and Dual 4-Channel CMOS Analog Multiplexers with Overvoltage Protection tacorporated T-51-11 FEATURES BENEFITS APPLICATIONS • Analog/Digital Overvoltage Protection
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S2SH73S
DG548/549
T-51-11
DG548
DG549
DG549
A55473S
00154D5
DG548/549
DQS48
le4b
U3825
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Untitled
Abstract: No abstract text available
Text: mating taco acc o r d in g to m\ r lH lU t i contact — I EC 6 0 6 0 3 - 7 no \ .contact 52. 6 maxi 1 f a b [ p 0 6. 1mm - 0 6 . 9mm N u t M1 Qx 1 w i t h c a b i p c l a m p i n g - - For s t r a n d e d c o n d u c t o r s AWG 28 t o AWG 24 Max w i r e d i a m e t e r 1 . 05mm
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100520013/UGD/001/B
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boiler
Abstract: EB-R-18 8 pin connector EB-R-27 EBR13 boiler eb-r BH011 EE-5051 EB-R-13 Sequencers
Text: FOUR-ZONE HOOKUP, USING EB-ZS-4 NOTES: 4 — WIRE ZONE VALVE TACO 3 -W IR E ZONE VALVE 1. SHOWN IS H O O K -U P FOR 3 DIFFERENT ZO NE VALVE TYPES. TYPICALLY A LL ZO NE VALVES ON AN INSTALLATION WILL BE THE SAME TYPE. 2 -W IR E ZONE VALVE 2 . BASIC STAT SHOWN, SOME ELECTRONIC SLAB STATS
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EB-R-13
EB-R-18
EB-R-27
BH011
24VAC
boiler
EB-R-18
8 pin connector
EB-R-27
EBR13
boiler eb-r
EE-5051
Sequencers
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM6814/6815 Single Chip CODEC with Time Slot Assignment GENERAL DESCRIPTION The MSM6814 and MSM6815 are single chip CODEC w ith tim e slot assignm ent TACODEC w hich are fabricated by Oki's low pow er consum ption CMOS silicon gate technology.
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MSM6814/6815
MSM6814
MSM6815
24S40
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Untitled
Abstract: No abstract text available
Text: semiconductor MSM6814 /-Law MSM6815 (A-Law) SINGLE CHIP CODEC WITH TIME SLOT ASSIGNMENT GENERAL DESCRIPTION The M S M 6 8 1 4 and M S M 6 8 1 5 are single ch ip CODEC w ith tim e slot assig n m e n t (TACODEC) w h ich are fa b ric a te d by O k i's low pow er con su m p tio n CM O S silico n gate technology.
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MSM6814
MSM6815
CODEC-MSM6814/15
MSM6814/15
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TC51V16405
Abstract: TC51V16405c
Text: INTEGRATED TOSHIBA " O S H I B A MOS DIGITAL I NT EGR AT ED CIRCUIT ” 51 V 16405 C5JS CST5 - SO TCS1V1c405 CSJ S/CSTS- 60 CIRCUIT TECHNICAL DATA SILICON GATE CMOS TENTATIVE DATA 4,194,304 W O RD x 4 BIT FAST PAGE DYNAM IC RAM DESCRIPTION The TC51V16405CSJS/CSTS is fast page dynamic RAM organized 4,194,304 words by 4 bits. The
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TCS1V1c405
TC51V16405CSJS/CSTS
300mil)
TCS1V16405
TC51V16405
SOJ26
TSOP26
TC51V16405c
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TC514100
Abstract: 514100A
Text: 4,194,304 WORD X 1 BIT DYNAMIC RAM DESCRIPTION THE TC514100A is the new generation dynamic RAM organized 4,194,304 word by 1 bit. The TC514410ASJ/AZ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit
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--------------TC514100ASJ/AZ/AFT-60/70/80
TC514100A
TC514410ASJ/AZ/AFT
300mil)
TC51400/ASJ/A27AFT.
TC514100
514100A
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1ss nec
Abstract: No abstract text available
Text: PRELIM INARY DATA S H E E T MOS IN TEGRATED CIRCUIT MC-428LFF72 3.3 V OPERATION 8 M-WORD BY 72-BIT DYNAMIC RAM MODULE BUFFERED TYPE, HYPER PAGE MODE EDO Description Th e M C-428LFF72 1« • 6.388,608 words by 72 bits dynam ic RAM m oduli on which 8 pieces of 84 M DRAM :
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MC-428LFF72
72-BIT
C-428LFF72
b427525
1ss nec
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