3N60A4D
Abstract: 3n60a4 HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4D N-Channel mosfet 400v 25A
Text: HGT1S3N60A4DS, HGTP3N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1S3N60A4DS and the HGTP3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices
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HGT1S3N60A4DS,
HGTP3N60A4D
HGT1S3N60A4DS
HGTP3N60A4D
150oC.
TA49327.
TA49369.
3N60A4D
3n60a4
HGT1S3N60A4DS9A
N-Channel mosfet 400v 25A
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3n60a4
Abstract: 3N60 HGTD3N60A4S HGT1S3N60A4S HGT1S3N60A4S9A HGTP3N60A4 HGTP3N60A4D TB334
Text: HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 Data Sheet January 2000 File Number 600V, SMPS Series N-Channel IGBT Features The HGTD3N60A4S, HGT1S3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input
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HGTD3N60A4S,
HGT1S3N60A4S,
HGTP3N60A4
HGT1S3N60A4S
HGTP3N60A4
150oC.
100kHz
3n60a4
3N60
HGTD3N60A4S
HGT1S3N60A4S9A
HGTP3N60A4D
TB334
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3n60a4d
Abstract: HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4D 3n60
Text: HGT1S3N60A4DS, HGTP3N60A4D Data Sheet January 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1S3N60A4DS and the HGTP3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices
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HGT1S3N60A4DS,
HGTP3N60A4D
HGT1S3N60A4DS
HGTP3N60A4D
150oC.
TA49327.
TA49369.
3n60a4d
HGT1S3N60A4DS9A
3n60
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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3N60A4
Abstract: HGTD3N60A4S HGTP3N60A4 HGT1S3N60A4S HGT1S3N60A4S9A HGTP3N60A4D TB334 transistor equivalent 3N60A4
Text: HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 Data Sheet January 2000 File Number 600V, SMPS Series N-Channel IGBT Features The HGTD3N60A4S, HGT1S3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input
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HGTD3N60A4S,
HGT1S3N60A4S,
HGTP3N60A4
HGT1S3N60A4S
HGTP3N60A4
150oC.
100kHz
3N60A4
HGTD3N60A4S
HGT1S3N60A4S9A
HGTP3N60A4D
TB334
transistor equivalent 3N60A4
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3N60A4
Abstract: HGTD3N60A4S HGT1S3N60A4S HGT1S3N60A4S9A HGTP3N60A4 TB334
Text: HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 Data Sheet January 2000 File Number 600V, SMPS Series N-Channel IGBT Features The HGTD3N60A4S, HGT1S3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input
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HGTD3N60A4S,
HGT1S3N60A4S,
HGTP3N60A4
HGT1S3N60A4S
HGTP3N60A4
150oC.
100kHz
3N60A4
HGTD3N60A4S
HGT1S3N60A4S9A
TB334
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3n60a4d
Abstract: HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4D 3N60A4
Text: HGT1S3N60A4DS, HGTP3N60A4D Data Sheet January 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1S3N60A4DS and the HGTP3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices
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HGT1S3N60A4DS,
HGTP3N60A4D
HGT1S3N60A4DS
HGTP3N60A4D
150oC.
TA49327.
TA49369.
3n60a4d
HGT1S3N60A4DS9A
3N60A4
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3N60A4
Abstract: No abstract text available
Text: HGT1S3N60A4DS, HGTP3N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1S3N60A4DS and the HGTP3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices
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Original
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PDF
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HGT1S3N60A4DS,
HGTP3N60A4D
HGT1S3N60A4DS
HGTP3N60A4D
150oC.
TA49327.
TA49369.
3N60A4
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3N60A4
Abstract: HGTP3N60A4 HGTD3N60A4S HGTP3N60A4D LD26 TB334 45A-150
Text: HGTD3N60A4S, HGTP3N60A4 Data Sheet August 2003 600V, SMPS Series N-Channel IGBT Features The HGTD3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the
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HGTD3N60A4S,
HGTP3N60A4
HGTD3N60A4S
HGTP3N60A4
150oC.
100kHz
200kHz
3N60A4
HGTP3N60A4D
LD26
TB334
45A-150
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3N60A4D
Abstract: TA49369 HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4D 5LEC A9688
Text: HGT1S3N60A4DS, HGTP3N60A4D in t e r r i i J a n u a ry . D ata S h eet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1S3N60A4DS and the HGTP3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices
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OCR Scan
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PDF
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HGT1S3N60A4DS
HGTP3N60A4D
TA49327.
TA49369.
3N60A4D
TA49369
HGT1S3N60A4DS9A
5LEC
A9688
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