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    irf150

    Abstract: MOSFET IRF150 TA17421 TB334 circuits of IRF150 40A100V IRF-150
    Text: IRF150 Data Sheet March 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET • 40A, 100V Formerly Developmental Type TA17421. Ordering Information PACKAGE 1824.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		PDF IRF150 TA17421. irf150 MOSFET IRF150 TA17421 TB334 circuits of IRF150 40A100V IRF-150

    TA17421

    Abstract: IRF140 datasheet IRF140 IRF140 INTERSIL
    Text: IRF140 Data Sheet March 1999 28A, 100V, 0.077 Ohm, N-Channel Power MOSFET • 28A, 100V Formerly developmental type TA17421. • rDS ON = 0.077Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds


    Original     		PDF IRF140 TA17421. O-204AE TA17421 IRF140 datasheet IRF140 IRF140 INTERSIL

    IRFP140

    Abstract: TA17421 TB334
    Text: NS ESIG D W R NE UCT D FO E PROD E D N T MME BSTITU U ECOSheet N S R Data 4 E T NO FP1 SIBL R I S O P Title FP1 bt A, 0V, 77 m, wer OST utho eyrds A, 0V, 77 m, June 2000 31A, 100V, 0.077 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field


    Original     		PDF IRFP14 IRFP140 TA17421. IRFP140 TA17421 TB334

    IRF540

    Abstract: T1 IRF540 IRF542 IRF541 IRF543 RF1S540 RF1S540SM IRF540 harris Applications Note of IRF540 IRF540 MOSFET
    Text: IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM S E M I C O N D U C T O R 25A and 28A, 80V and 100V 0.077Ω and 0.100Ω N-Channel Power MOSFETs March 1996 Features Packages JEDEC TO-220AB • 25A and 28A, 80V and 100V SOURCE DRAIN GATE • rDS ON = 0.077Ω and 0.100Ω


    Original     		PDF IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM O-220AB IRF540 T1 IRF540 IRF542 IRF541 IRF543 RF1S540 RF1S540SM IRF540 harris Applications Note of IRF540 IRF540 MOSFET

    IRF54

    Abstract: IRF540 RF1S540SM RF1S540SM9A Applications Note of IRF540 RF1S540 T1 IRF540 IRF540 application IRF540 MOSFET datasheet irf540 pdf switch
    Text: [ /Title IRF54 0, RF1S5 40SM /Subject (28A, 100V, 0.077 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFETs, TO220AB , TO263AB ) /Creator () /DOCI IGNS DES W E T OR N DUC ED F TE PRO D N MME BSTITU ECOSheet SU


    Original     		PDF IRF54 O220AB O263AB IRF540 IRF54 IRF540 RF1S540SM RF1S540SM9A Applications Note of IRF540 RF1S540 T1 IRF540 IRF540 application IRF540 MOSFET datasheet irf540 pdf switch

    Diode Mark N10

    Abstract: RFP18N10 TA17421 RFM18N08 RFM18N10 RFP18N08 TB334
    Text: [ /Title RFM18 N08, RFM18 N10, RFP18N 08, RFP18N 10 /Subject (18A, 80V and 100V, 0.1 Ohm, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN FO pdfmark RFM18N08, RFM18N10, RFP18N08, RFP18N10


    Original     		PDF RFM18 RFP18N O204AA, O220AB) RFM18N08, RFM18N10, RFP18N08, RFP18N10 Diode Mark N10 RFP18N10 TA17421 RFM18N08 RFM18N10 RFP18N08 TB334

    IRF540G

    Abstract: IRF540 mosfet with maximum VDS 30 V IRF540 T1 IRF540 RF1S540 RF1S540SM RF1S540SM9A Applications Note of IRF540
    Text: NS ESIG D W R NE UCT D FO E PROD E D N T MME BSTITU U ECOSheet S N R Data E T 4 NO SIBL IRF5 POS 28A, 100V, 0.077 Ohm, N-Channel Power MOSFETs [ /Title IRF54 0, RF1S5 40SM /Subject (28A, 100V, 0.077 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil


    Original     		PDF IRF540, RF1S540SM IRF54 O220AB O263AB RF1S540SM IRF540G IRF540 mosfet with maximum VDS 30 V IRF540 T1 IRF540 RF1S540 RF1S540SM9A Applications Note of IRF540

    IRF540G

    Abstract: Application Note of IRF540 IRF540 T1 IRF540 RF1S540SM RF1S540SM9A
    Text: IRF540, RF1S540SM Data Sheet 28A, 100V, 0.077 Ohm, N-Channel Power MOSFETs [ /Title IRF54 0, RF1S5 40SM /Subject (28A, 100V, 0.077 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFETs, TO220AB , TO263AB ) /Creator ()


    Original     		PDF IRF540, RF1S540SM IRF54 O220AB O263AB IRF540G Application Note of IRF540 IRF540 T1 IRF540 RF1S540SM RF1S540SM9A

    4311 mosfet transistor

    Abstract: transistor tl 4311 IRFP140 TA17421 TB334
    Text: IRFP140 Data Sheet July 1999 31A, 100V, 0.077 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


    Original     		PDF IRFP140 TA17421. 4311 mosfet transistor transistor tl 4311 IRFP140 TA17421 TB334

    IRF540 mosfet with maximum VDS 12v

    Abstract: IRF540 Applications Note of IRF540 MOSFET IRF540 TA17421 IRF540 mosfet irf540 pdf switch irf541 IRF542 IRF543
    Text: IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM Semiconductor 25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 25A and 28A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM IRF540 mosfet with maximum VDS 12v IRF540 Applications Note of IRF540 MOSFET IRF540 TA17421 IRF540 mosfet irf540 pdf switch irf541 IRF542 IRF543

    IRFP140

    Abstract: Relays 12v 31A TA17421 TB334
    Text: IGNS DES W E T OR N DUC ED F TE PRO D N MME BSTITU ECOSheet SU R 0N Data January 2002 T NO IBLE IRFP14 S S PO 31A, 100V, 0.077 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		PDF IRFP14 TA17421. IRFP140 Relays 12v 31A TA17421 TB334

    IRF540

    Abstract: RF1S540SM RF1S540SM9A T1 IRF540 Applications Note of IRF540 IRF540 application TA17421 TB334 MOSFET IRF540
    Text: IRF540, RF1S540SM Data Sheet 28A, 100V, 0.077 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		PDF IRF540, RF1S540SM TA17421. IRF540 RF1S540SM RF1S540SM9A T1 IRF540 Applications Note of IRF540 IRF540 application TA17421 TB334 MOSFET IRF540

    IRF150

    Abstract: MOSFET IRF150 12V 40A voltage regulators IRF152
    Text: IRF150, IRF151, IRF152, IRF153 S E M I C O N D U C T O R 33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 33A and 40A, 60V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRF150, IRF151, IRF152, IRF153 TA17421. IRF150 MOSFET IRF150 12V 40A voltage regulators IRF152

    IRF541

    Abstract: IRF540 mosfet with maximum VDS 12v IRF5402 IRF540 T1 IRF540 IRF542 IRF543 IRF540 mosfet with maximum VDS 30 V RF1S540 RF1S540SM
    Text: IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM S E M I C O N D U C T O R 25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 25A and 28A, 80V and 100V These are N-Channel enhancement mode silicon gate


    Original     		PDF IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM TA17421. IRF541 IRF540 mosfet with maximum VDS 12v IRF5402 IRF540 T1 IRF540 IRF542 IRF543 IRF540 mosfet with maximum VDS 30 V RF1S540 RF1S540SM

    IRF540

    Abstract: MOSFET IRF540 RF1S540SM Applications Note of IRF540 RF1S540SM9A IRF540 mosfet with maximum VDS 30 V IRF540 mosfet with maximum VDS 12v T1 IRF540 TA17421 TB334
    Text: IGNS DES W E T OR N DUC ED F TE PRO D N MME BSTITU ECOSheet SU R Data January 2002 T 40N NO IBLE S IRF5 S PO IRF540, RF1S540SM 28A, 100V, 0.077 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRF540 IRF540, RF1S540SM RF1S540SM IRF540 MOSFET IRF540 Applications Note of IRF540 RF1S540SM9A IRF540 mosfet with maximum VDS 30 V IRF540 mosfet with maximum VDS 12v T1 IRF540 TA17421 TB334

    Untitled

    Abstract: No abstract text available
    Text: IRF540, RF1S540SM S e m iconductor Data Sheet 28A, 100V, 0.077 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    OCR Scan     		PDF IRF540, RF1S540SM 077i2

    Untitled

    Abstract: No abstract text available
    Text: IRFP140 S em iconductor D ata S h eet Ju ly 1999 31 A, 100V, 0.077 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    OCR Scan     		PDF IRFP140 O-247

    Untitled

    Abstract: No abstract text available
    Text: i H A R R IRFP140, IRFP141, IRFP142, IRFP143 i s s e m i c o n d u c t o r 27 A and 31 A, 80V and 100V, 0.077 and 0.099 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 27A and 31 A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFP140, IRFP141, IRFP142, IRFP143 RFP142,

    irfp140

    Abstract: IRFP141 IRFP142 IRFP143
    Text: i h a ” r r IRFP140, IRFP141, IRFP142, IRFP143 i s " I O O N ° “ C T ° " 27A and 31 A, 80V and 100V, 0.077 and 0.099 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 27A and 31 A, 80V and 100V These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFP140, IRFP141, IRFP142, IRFP143 irfp140 IRFP141 IRFP142 IRFP143

    TRANSISTORS 132 GD

    Abstract: IRF150 kiv-8 IRF151 circuits of IRF150
    Text: IRF150, IRF151, IRF152, IRF153 Semiconductor 33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 33A and 40A, 60V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		PDF IRF150, IRF151, IRF152, IRF153 TA17421. RF152, RF153 TRANSISTORS 132 GD IRF150 kiv-8 IRF151 circuits of IRF150

    IRF150

    Abstract: IRF150 MOSFET MOSFET IRF150 IRF-150
    Text: IRF150, IRF151, IRF152, IRF153 HARRIS S E M I C O N D U C T O R 33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 33A and 40A, 60V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		PDF IRF150, IRF151, IRF152, IRF153 TA17421. RF152, IRF150 IRF150 MOSFET MOSFET IRF150 IRF-150

    Untitled

    Abstract: No abstract text available
    Text: IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM H A F R F R IS S E M I C O N D U C T O R 25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs November 1997 Description Features 25A and 28A, 80V and 100V These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM

    IRF140

    Abstract: IRF141 IRF143 IRF142 to204ae IRF140 HARRIS IRF140 ir
    Text: IRF140, IRF141, IRF142, IRF143 h a r r is SEM C0NDUCT0R 28A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs Juiy 1998 Features Description • 28A and 25A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF 077i2 IRF140, IRF141, IRF142, IRF143 IRF140 IRF141 IRF143 IRF142 to204ae IRF140 HARRIS IRF140 ir

    TA17421

    Abstract: No abstract text available
    Text: y *“ * RFM18N08, RFM18N10, RFP18N08, RFP18N10 18A, 80V and 100V, 0.100 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 18A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    OCR Scan     		PDF RFM18N08, RFM18N10, RFP18N08, RFP18N10 TA17421. RFM18N08 RFM18N10 RFP18N08 100i2 TA17421