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    T918 Price and Stock

    Richtek Technology Corp RT9187GQV

    IC REG LINEAR POS ADJ 1A 8VDFN
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    DigiKey RT9187GQV Cut Tape 37,449 1
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    RT9187GQV Reel 36,000 1,500
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    Mouser Electronics RT9187GQV 2,143
    • 1 $0.44
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    • 100 $0.259
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    • 10000 $0.175
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    Bristol Electronics RT9187GQV 1,490 10
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    Win Source Electronics RT9187GQV 299,000
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    Richtek Technology Corp RT9187CGB

    IC REG LIN POS ADJ 600MA SOT23-5
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    DigiKey RT9187CGB Digi-Reel 6,912 1
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    RT9187CGB Cut Tape 6,912 1
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    RT9187CGB Reel 6,000 3,000
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    Win Source Electronics RT9187CGB 48,400
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    Richtek Technology Corp RT9187BGB

    IC REG LIN ADJ 600MA SOT23-5
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    DigiKey RT9187BGB Digi-Reel 2,197 1
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    RT9187BGB Cut Tape 2,197 1
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    Mouser Electronics RT9187BGB 2,826
    • 1 $0.46
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    • 100 $0.276
    • 1000 $0.181
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    Central Technologies CT918CYF-2R0N

    SMD SHIELDED POWER INDUCTOR
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    DigiKey CT918CYF-2R0N Reel 2,020 1
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    YAGEO Corporation RSF500JT-91-82K

    RES 82K OHM 5% 5W AXIAL
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    DigiKey RSF500JT-91-82K Cut Tape 864 1
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    RSF500JT-91-82K Ammo Pack 750 250
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    Avnet Americas RSF500JT-91-82K Reel 24 Weeks 1,000
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    Mouser Electronics RSF500JT-91-82K 968
    • 1 $0.71
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    Avnet Abacus RSF500JT-91-82K 20 Weeks 1,000
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    Ozdisan Elektronik RSF500JT-91-82K
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    T918 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    T91821800000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Wire to Board - TERM BLK 18P TOP ENT 5.08MM PCB Original PDF

    T918 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    T-918

    Abstract: Wideband t918 T 918 Dc to Dc 102 inductance 102
    Text: WIDEBAND TRANSFORMER Turns Ratio + 2% 1:1:1 PARAMETER MIN. Inductance 1.8 MAX. UNITS MHy Leakage Inductance 0.6 µHy Capacitance (CW/W) 45 pF Primary DC Resistance 1.0 ohms Secondary DC Resistance 1.0 ohms Tertiary DC Resistance 1.0 ohms Return Loss 51 to 102 KHz


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    PDF 3072KHz T-918 896-09Ratio T-918 Wideband t918 T 918 Dc to Dc 102 inductance 102

    asus F3J inverter

    Abstract: T3509 schematic asus f3j inverter ALC660 asus f3j c2406 diode R5538D001 asus F3J Power inverter C2407 ASUS
    Text: A B C D E F2J SCHEMATIC R11 ER Content PAGE 1 2 3 4 PAGE SYSTEM PAGE REF. 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 YONAH CPU (1) YONAH CPU (2) CPU CAP/THERMAL SENSOR CLOCK GEN.


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    PDF RTL8111B asus F3J inverter T3509 schematic asus f3j inverter ALC660 asus f3j c2406 diode R5538D001 asus F3J Power inverter C2407 ASUS

    hp 502 transistor

    Abstract: t918 ma t918
    Text: Central C M P T918 Semiconductor Corp. NPN SILICON RF TRANSISTOR DESCRIPTION: The C EN TR AL SEM IC O N D U C TO R T918 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high frequency VHF/UHF


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    PDF CMPT918 OT-23 10ntrtlJ7 500MHz 200MHz 60MHz hp 502 transistor t918 ma t918

    t918

    Abstract: 10000 uf ovam 40
    Text: E èÎËQGÇS T918 TX POWER MMIC Your GaAs IC Source Advanced Product Information Rev 0 CELLULAR/PCS Dual Band GaAs Power Amplifier IC D ES C R IP TIO N : T he A W T918 is a m onolithic GaAs Pow er Am plifier. It can be used in the follow ing dual band handset


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    PDF AWT918 900/D 900/G AWT918 t918 10000 uf ovam 40

    CMPT918

    Abstract: rf-transistor
    Text: Central C M P T918 Sem iconductor Corp. NPN SILICON RF TRANSISTOR DESCRIPTION: The CEN TR AL SE M IC O N D U C T O R T918type is an NPN silicon RFtransistor manufactured by the epitaxial planarprocess, epoxy molded in a surface mount package, designed for high frequency VHF/UHF


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    PDF CMPT918 OT-23 CMPT918type 100MHz 10MHz 500MHz 200MHz 60MHz CMPT918 rf-transistor

    BCW65C

    Abstract: FERRANTI ELECTRONICS transistors DEVICE MARKING BF197P BCV71 BCV72 BCW29 BCW30 BCW31 BCW32
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW 29 BCW 30 BCW31 BCW 32 BCW 33 BCW 60A BCW 60B BCW 60C BCW 60D B CW 61A BCW 61B BCW 61C B CW 61D B CW 65A


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    PDF OT-23 BCV71 BFQ31 BCV72 BFQ31A BCW29 BFS20 BCW30 BCW31 BCW32 BCW65C FERRANTI ELECTRONICS transistors DEVICE MARKING BF197P

    m6 marking transistor sot-23

    Abstract: C5 MARKING TRANSISTOR transistor marking code 7E SOT-23 transistor ad 1v TRANSISTOR a43 A12 marking ht3 SOT23 transistor cg sot-23 transistor G1 SOT-23 transistor sot-23 Marking AR
    Text: FERRANTI semiconductors HT3 PNP S ilicon Planar H igh V o lta g e T ra n s is to r D E S C R IP T IO N T h is p la s tic e n c a p s u la te d tra n s is to r is d e s ig n e d fo r a n y a p p lic a tio n re q u irin g h ig h v o lta g e c a p a b ility a t re la tiv e ly lo w


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    PDF OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B FMMT-A42 BCW67C FMMT-A43 m6 marking transistor sot-23 C5 MARKING TRANSISTOR transistor marking code 7E SOT-23 transistor ad 1v TRANSISTOR a43 A12 marking ht3 SOT23 transistor cg sot-23 transistor G1 SOT-23 transistor sot-23 Marking AR

    kn sot23

    Abstract: sot-23 Marking KN BSV52 A12 marking CTC ef 125 33 m8 SOT23 transistor EH sot-23 marking code transistors BSV52 marking code 25X SOT23 C5 MARKING TRANSISTOR
    Text: * FERRANTI semiconductors BSV52 NPN Silicon Planar High Speed Switching Transistor D E S C R IP TIO N This d evice is in te n d ed s p e c ific a lly fo r use in high speed, lo w c u rre n t s w itc h in g a p p lica tio n s. Encapsulated in th e p o p u la r S O T -2 3 package th ese devices


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    PDF BSV52 OT-23 BSV52 Volt00/300 FMMT2222 FMMT2369A FMMT2369 BSS82B kn sot23 sot-23 Marking KN A12 marking CTC ef 125 33 m8 SOT23 transistor EH sot-23 marking code transistors BSV52 marking code 25X SOT23 C5 MARKING TRANSISTOR

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    T716

    Abstract: T714 t918 t505 Elite Microelectronics t718 T10610 t702 8 T907 T101
    Text: 9. e88C 412 ELECTRICAL & TIMING SPECIFICATION 9.1 Storage and Operating Characteristics 9.1.1 Absolute Maximum Ratings Vss = 0 volts Stresses above the conditions listed in this section may cause permanent damage to the device. This is a stress rating only. The functional operation of the device at these or any


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    PDF e88C412 e88C412 T716 T714 t918 t505 Elite Microelectronics t718 T10610 t702 8 T907 T101

    powec rm 1110

    Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
    Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor


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    PDF 111ii MZ5558 Z5555, Z5556, MZ5557 powec rm 1110 rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


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    PDF 27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175

    transistors BC 557C

    Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
    Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and


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    MARKING CODE A06

    Abstract: marking 1G SOT23 sot-23 MARKING CODE G1 AH A06 sot-23 body marking 1P NPN e30551 marking A06 A12 marking amplifier A55 marking sot-23 Marking G1
    Text: FERRANTI * semiconductors FMMT-A05 FM MT-AO6 NPN Silicon Planar Medium Power Transistors D E S C R IP T IO N M e d iu m pow er transistors designed fo r sm all and medium am plification from d.c. to radio frequencies, in applica­ tio n s such as Audio Frequency Am plifiers, Drivers,


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    PDF FMMT-A05 FMMT-A55 FMMT-A56. OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 MARKING CODE A06 marking 1G SOT23 sot-23 MARKING CODE G1 AH A06 sot-23 body marking 1P NPN e30551 marking A06 A12 marking amplifier A55 marking sot-23 Marking G1

    ztx327

    Abstract: BF197P FERRANTI ELECTRONICS H9 sot 23 BSS63 BSS64 FMMT918 FMMTA12 FMMTA13 FMMTA14
    Text: SOT-23 TRANSISTORS D A R L IN G T O N -N P N R A T IN G S A N D C H A R A C T E R IS T IC S at 25°C ambient temperature. Type hFE at Iq /V ce mA/Volts t Ic b o nA V cb V olts ic mA P to t * mW min 30 300 300 10K 10/5 100 30 30 300 300 5K 10/5 100 30 20 300


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    PDF OT-23 FMMTA14 FMMTA13 FMMTA12 10x8x0 FMMTA42 FMMTA92 FMMTA43 FMMTA93 BSS64 ztx327 BF197P FERRANTI ELECTRONICS H9 sot 23 BSS63 FMMT918

    BZX 48c 6v8

    Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
    Text: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P


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    PDF 2004C 2004S 2004D Z5250B T3904 Z5251B Z5252B Z5253B Z5254B Z5255B BZX 48c 6v8 PT2369 code Cj5 CMXZ11VTO 7006S

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


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    varactor 36z

    Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
    Text: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r


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    PDF Z1000 MZ4614 MZ4627 1N4099 M4L3052 M4L3056 1N5158 varactor 36z germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902

    ferranti

    Abstract: FMMT-A20 FMMT2222A BCV72 BCW29 BCW30 BCW31 BFQ31 BFQ31A BFS20
    Text: FERRANTI semiconductors FMMT-A20 NPN S ilico n Planar Small Signal Transistor D E S C R IP T IO N These devices ere intended for sm all and m edium signal am plification applications from d.c. to radio frequencies. Encapsulated in the popular S O T -23 package these devices


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    PDF FMMT-A20 OT-23 FMMT5087 BCW69 BCW70 BCX71G BCX71H BCX71J BCX71K ferranti FMMT-A20 FMMT2222A BCV72 BCW29 BCW30 BCW31 BFQ31 BFQ31A BFS20

    sot-23 MARKING CODE G1

    Abstract: code marking 2M sot-23 sot23 marking m8 marking code T4 SOT-23 sot 23 marking code 2t A56 sot ferranti marking code FA sot23 FMMT-A56 amplifier A55 marking
    Text: i FERRANTI FMMT-A55 FMMT-A56 T IIsemiconductorsL PNP Sili con Planar M e d i u m P o w e r Transistors D E S C R IP T IO N M e d iu m pow er transisto rs designed fo r sm all and am plification from d.c. to radio frequencies, in tio n s such as A u d io Frequency Am plifiers,


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    PDF FMMT-A55 FMMT-A56 FMMT-A06. OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 sot-23 MARKING CODE G1 code marking 2M sot-23 sot23 marking m8 marking code T4 SOT-23 sot 23 marking code 2t A56 sot ferranti marking code FA sot23 FMMT-A56 amplifier A55 marking

    BCV72

    Abstract: BCW29 BCW30 BCW31 BFQ31 BFQ31A BFS20 FMMT4125 transistor dg sot-23 ferranti
    Text: I t FERRANTI llsemiconductorsL FMMT4125 PNP Silicon Planar General Purpose S w itch in g T ransistor D E S C R IP T IO N T h is device is intended for use in sm a ll and m e diu m sign a l a m p lificatio n a p p lica tio n s from d.c. to radio requencies.


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    PDF FMMT4125 OT-23 FMMT5087 BCW69 BCW70 BCX71G BCX71H BCX71J BCX71K BCV72 BCW29 BCW30 BCW31 BFQ31 BFQ31A BFS20 FMMT4125 transistor dg sot-23 ferranti

    marking of m7 diodes

    Abstract: BSS63 A12 marking BSS64R C5 MARKING TRANSISTOR device marking code S4 diode marking 2T Diode marking m7 transistor marking code SOT-23 2F Marking H2
    Text: FERRANTI 4 semiconductors BSS64 ! NPN S ilico n Planar H igh V o lta g e T ra n s is to DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the BSS63.


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    PDF BSS64 BSS63. OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B FMMT-A42 marking of m7 diodes BSS63 A12 marking BSS64R C5 MARKING TRANSISTOR device marking code S4 diode marking 2T Diode marking m7 transistor marking code SOT-23 2F Marking H2

    transistor marking code 7E SOT-23

    Abstract: transistor dg sot-23 marking 1p transistor sot23 D6 TRANSISTOR MARKING m6 marking transistor sot-23 sot-23 MARKING CODE G1 TRANSISTOR 1P SOT23 transistor sot-23 Marking AR transistor G1 SOT-23 transistor cg sot-23
    Text: FERRANTI semiconductors BSS63 PNP S ilico n Planar High V o lta g e T ra n s is to r D ES C R IPTIO N & This plastic encapsulated transistor is designed fo r any application requiring high vo lta g e capability a t relatively low collector currents. C o m p lem en tary to th e BSS64.


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    PDF BSS63 BSS64. OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B transistor marking code 7E SOT-23 transistor dg sot-23 marking 1p transistor sot23 D6 TRANSISTOR MARKING m6 marking transistor sot-23 sot-23 MARKING CODE G1 TRANSISTOR 1P SOT23 transistor sot-23 Marking AR transistor G1 SOT-23 transistor cg sot-23

    marking code AD

    Abstract: transistor EH sot-23 ZD 103 ma BCV72 BCW29 BCW30 BCW31 BFQ31 BFQ31A BFS20
    Text: FERRANTI semiconductors FMMT2369A NPN Silicon Planar High Speed S w itching Transistor DESCRIPTION This device is intended specifically for use in high speed, low current switching applications. Encapsulated in the popular SOT-23 package the device is designed specifically for use in thin and thick film hybrid


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    PDF FMMT2369A OT-23 Curre00/300 FMMT2222 FMMT2369A FMMT2369 BSV52 BSS82B BSS82C marking code AD transistor EH sot-23 ZD 103 ma BCV72 BCW29 BCW30 BCW31 BFQ31 BFQ31A BFS20