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    T 2148 TRANSISTOR Search Results

    T 2148 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    T 2148 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HD64F2144FA20

    Abstract: HD64F2138ATF20 ac din hfe nv 2148A HD64F2134ATF20 HD64F2138AFA20 HD64F2148FA20 tp 312 transistor Hitachi DSA00167 HD64F2134ATF
    Text: Hitachi Single-Chip Microcomputer H8S/2148 Series H8S/2144 Series H8S/2148F-ZTAT , H8S/2144F-ZTAT™, H8S/2142F-ZTAT™ H8S/2148 HD6432148W, HD6432148, HD64F2148 H8S/2147 HD6432147W, HD6432147 H8S/2144 HD6432144, HD64F2144 H8S/2143 HD6432143 H8S/2142 HD6432142, HD64F2142R


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    PDF H8S/2148 H8S/2144 H8S/2148F-ZTATTM, H8S/2144F-ZTATTM, H8S/2142F-ZTATTM HD6432148W, HD6432148, HD64F2148 H8S/2147 HD64F2144FA20 HD64F2138ATF20 ac din hfe nv 2148A HD64F2134ATF20 HD64F2138AFA20 HD64F2148FA20 tp 312 transistor Hitachi DSA00167 HD64F2134ATF

    HD64F2148FA20

    Abstract: C 547 B pin configuration H0318 Hitachi DSAUTAZ006
    Text: Hitachi Single-Chip Microcomputer H8S/2148 Series H8S/2144 Series H8S/2148F-ZTAT , H8S/2144F-ZTAT™, H8S/2142F-ZTAT™ H8S/2148 HD6432148W, HD6432148, HD64F2148 H8S/2147 HD6432147W, HD6432147 H8S/2144 HD6432144, HD64F2144 H8S/2143 HD6432143 H8S/2142 HD6432142, HD64F2142R


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    PDF H8S/2148 H8S/2144 H8S/2148F-ZTATTM, H8S/2144F-ZTATTM, H8S/2142F-ZTATTM HD6432148W, HD6432148, HD64F2148 H8S/2147 HD64F2148FA20 C 547 B pin configuration H0318 Hitachi DSAUTAZ006

    transistor SJ 2518

    Abstract: UA706 ac din hfe nv HD6432148 HD64F2148 ay 5 1011 Hitachi DSA0042
    Text: Hitachi Single-Chip Microcomputer H8S/2148 Series H8S/2144 Series H8S/2148F-ZTAT , H8S/2144F-ZTAT™, H8S/2142F-ZTAT™ H8S/2148 HD6432148W, HD6432148, HD64F2148 H8S/2147 HD6432147W, HD6432147 H8S/2144 HD6432144, HD64F2144 H8S/2143 HD6432143 H8S/2142 HD6432142, HD64F2142R


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    PDF H8S/2148 H8S/2144 H8S/2148F-ZTATTM, H8S/2144F-ZTATTM, H8S/2142F-ZTATTM HD6432148W, HD6432148, HD64F2148 H8S/2147 transistor SJ 2518 UA706 ac din hfe nv HD6432148 HD64F2148 ay 5 1011 Hitachi DSA0042

    Equivalent IR 740

    Abstract: 256-key Keyboard encoder H8/2144 HD64F2148 557 timer connections 8086 microprocessor block diagrammed with direction asd a2 1021 KB 2147 IC diagram Keyboard Encoder PS/2 SM 686 6V
    Text: REJ09B0327-0400 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2148 Group, H8S/2144 Group,


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    PDF REJ09B0327-0400 H8S/2148 H8S/2144 H8S/2148F-ZTATTM, H8S/2147N H8S/2144F-ZTATTM, H8S/2142F-ZTATTM 16-Bit Family/H8S/2100 H8S/2148 Equivalent IR 740 256-key Keyboard encoder H8/2144 HD64F2148 557 timer connections 8086 microprocessor block diagrammed with direction asd a2 1021 KB 2147 IC diagram Keyboard Encoder PS/2 SM 686 6V

    HD6432148S

    Abstract: HD6432148SW HD64F2148 HD64F2144FA20 ac din hfe nv RD3a transistor BC 458 Nippon capacitors
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF H8S/2148 H8S/2144 H8S/2148F-ZTATTM, H8S/2147N H8S/2144F-ZTATTM, H8S/2142F-ZTATTM REJ09B0327-0400 HD6432148S HD6432148SW HD64F2148 HD64F2144FA20 ac din hfe nv RD3a transistor BC 458 Nippon capacitors

    transistor c36

    Abstract: CHN 748 CHN 632 HD6432143S HD6432144S HD6432147S HD6432147SW HD6432148S HD6432148SW notebook 486
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003.


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    PDF TFP-100B) H8S/2148 H8S/2144 transistor c36 CHN 748 CHN 632 HD6432143S HD6432144S HD6432147S HD6432147SW HD6432148S HD6432148SW notebook 486

    HD6432143S

    Abstract: HD6432144S HD6432147S HD6432147SW HD6432148S HD6432148SW transistor KD 503 ac din hfe nv sl 1008 transistor chn 752
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    PDF TFP-100B) H8S/2148 H8S/2144 HD6432143S HD6432144S HD6432147S HD6432147SW HD6432148S HD6432148SW transistor KD 503 ac din hfe nv sl 1008 transistor chn 752

    chn 947

    Abstract: chn 031 256-key Keyboard encoder 8086 microprocessor block diagrammed with direction keyboard pin notebook HD6432143S HD6432144S HD6432147S HD6432147SW HD6432148S
    Text: Hitachi Single-Chip Microcomputer H8S/2148 Series H8S/2148 HD6432148S, HD6432148SW H8S/2147 HD6432147S, HD6432147SW H8S/2144 Series H8S/2144 HD6432144S H8S/2143 HD6432143S H8S/2142 HD6432142 H8S/2148 F-ZTAT HD64F2148, HD64F2148V, HD64F2148A, HD64F2148AV,


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    PDF H8S/2148 H8S/2148 HD6432148S, HD6432148SW H8S/2147 HD6432147S, HD6432147SW H8S/2144 H8S/2144 HD6432144S chn 947 chn 031 256-key Keyboard encoder 8086 microprocessor block diagrammed with direction keyboard pin notebook HD6432143S HD6432144S HD6432147S HD6432147SW HD6432148S

    L910

    Abstract: No abstract text available
    Text: RF2146             • 4.8V CDMA PCS Handsets • Driver Amplifier in Cellular Base Stations • 4.8V TDMA PCS Handsets • Portable Battery Powered Equipment 2 POWER AMPLIFIERS • 4.8V PACS PCS Handsets     The RF2146 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT


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    PDF RF2146 RF2146 L910

    RF2146

    Abstract: No abstract text available
    Text: RF2146 2 PCS LINEAR POWER AMPLIFIER Typical Applications • 4.8V CDMA PCS Handsets • Driver Amplifier in Cellular Base Stations • 4.8V TDMA PCS Handsets • Portable Battery-Powered Equipment 2 Product Description The RF2146 is a high-power, high-efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT


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    PDF RF2146 RF2146 1500MHz 2000MHz

    kt829a

    Abstract: VEB mikroelektronik Datenblattsammlung Halbleiterbauelemente DDR information applikation mikroelektronik B4207D mikroelektronik datenblattsammlung mikroelektronik DDR "halbleiterwerk frankfurt" KT 829 b
    Text: 0=¡rúl[hE=°@Blel- t3nariilK e le k t r o n ik - b a u e t e m e n t e Die vorliegenden Datenblätter beinhalten ausführliche technische Angaben von aktiven elek­ tronischen Bauelementen des in den "Listen Elektronischer Bauelemente und Bausteine" (LEB


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    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTORS 2 SC 2148 , 2 SC 2149 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2148, 2SC2149 are econom ical microwave transistors PACKAGE DIMENSIONS encapsulated into new herm etic stripline packages, "micro X".


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    PDF 2SC2148, 2SC2149 2SC2149. 2SC2149

    equivalent of transistor tt 2148

    Abstract: equivalent of transistor tt 2146 equivalent for transistor tt 2146 transistor TT 2146 TT 2146 M4 A4 TPC1280 TT 2146 M4 D3 TRANSISTOR TT 2158 TT 2146 M4 G4 str z 2154
    Text: TPC12 SERIES CMOS FIELD-PROGRAMMABLE GATE ARRAYS SRFS002C - D3963, DECEMBER 1991 - REVISED FEBRUARY 1993 • Three Arrays With Increased Densities • Up to 8000 Equivalent Gate Array Gates • • Supported by Tl Action Logic System TI-ALS Software •


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    PDF TPC12 SRFS002C D3963, 50-MHz equivalent of transistor tt 2148 equivalent of transistor tt 2146 equivalent for transistor tt 2146 transistor TT 2146 TT 2146 M4 A4 TPC1280 TT 2146 M4 D3 TRANSISTOR TT 2158 TT 2146 M4 G4 str z 2154

    IRFD212

    Abstract: IRFD213
    Text: Ftmr IRFD212,213 HELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. 0.45 AMPERES 200,150 VOLTS


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    PDF 00A/aà IRFD212 IRFD213

    2SC2150

    Abstract: 2SC1223 TRANSISTOR 2sC 5250 2sc3604 micro X
    Text: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise


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    PDF 2SC3604 2SC3604 2SC3603 2SC2150 2SC1223 TRANSISTOR 2sC 5250 micro X

    to220aa

    Abstract: TO-220AA 2N5301 2N5302 2N5303 2N5496 2N5885 2N5886 2N6129 2N6326
    Text: THO nSO N/ D I S T R I BU TO R ^oabfl?3 0G0s?n m o SÔE D TCSK Bipolar Power Transistors General Purpose Continued v C E (s a t) " v hFE T y p e N o. v CEO<a u s > V V C E V (s u s ) V 40 60 60 60 80 80 80 - - - - 2 N 5 4 9 6 P LA S T IC FA M ILY ( n - p - n )


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    PDF 2N5303 2N5301 2N6326 2N5302* 2N5885 O-204AA/ 2N6327 2N5886 2N5496 to220aa TO-220AA 2N5302 2N6129

    B 660 TG

    Abstract: BCB46B C848B C848A C848C BC848A EO65
    Text: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors B C 8 4 6 A L T 1 ,B L T 1 BC8 4 7 A LT1, B L T 1 ,C L T 1 th ru B C 8 5 0 B L T 1 ,C L T 1 NPN Silicon 2 EMITTER BCB46, B C 847 and B C 848 are M o to rola P referred D ev ice s MAXIMUM RATINGS


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    PDF BCB46, BC846 BC847 BC850 BC848 BC849 OT-23 O-236AB) b3b7255 BC846ALT1 B 660 TG BCB46B C848B C848A C848C BC848A EO65

    TT 2146

    Abstract: transistor TT 2146 2SC2142 tt 2144 TT 2158 transistor TE 2162 138f te 2162 305B
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    PDF /--470MHz, Te-25 27MHz, TT 2146 transistor TT 2146 2SC2142 tt 2144 TT 2158 transistor TE 2162 138f te 2162 305B

    MMBR901LT1

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor MMBR901LT1, T3 MRF9011LT1 Designed primarily for use in high-gain, low-noise small-signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching


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    PDF MMBR901LT1, MRF9011LT1 MRF9011LT1) OT-23 OT-143 MRF9011LT1 MMBR901LT1

    Halbleiterbauelemente DDR

    Abstract: transistor vergleichsliste u82720 Datenblattsammlung VEB mikroelektronik aktive elektronische bauelemente ddr mikroelektronik datenblattsammlung je 3055 Motorola mikroelektronik DDR Transistor Vergleichsliste DDR
    Text: íx}i3í iu ]9n;g'q s p o s i l i o j p j S j © DNmiAf W¥S±±na N31¥Q >l!UDüq>|! ZUR B E A C H T U N G Die vorliegenden Datenblätter beinhalten ausführliche technische Angaben von aktiven elektronischen Bauelementen des in den "Listen Elektronischer Bauelemente und Bausteine" LEB)


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    PDF R-1035 Halbleiterbauelemente DDR transistor vergleichsliste u82720 Datenblattsammlung VEB mikroelektronik aktive elektronische bauelemente ddr mikroelektronik datenblattsammlung je 3055 Motorola mikroelektronik DDR Transistor Vergleichsliste DDR

    information applikation

    Abstract: U880D information applikation mikroelektronik Halbleiterbauelemente DDR "Mikroelektronik" Heft u880 mikroelektronik applikation VEB mikroelektronik mikroelektronik information applikation mikroelektronik DDR
    Text: i« ¡ 2 Information Applikation t m f f i ^ o e l e k t s n o •/ Information Applikation n • Heft 30: HALBLEITERSPEICHER Teil 2 SRAM und DRAM v e b halbleiterw erk frankfurfc/odor KBD im veb Kombinat mikroelektronik KAMMER DER TECHNIK Bezirksverbond


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    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF148 The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD


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    PDF MRF148 MRF148

    2n6489

    Abstract: 2N6488 power amplifier circuit
    Text: 2N6486, 2N6487, 2N6488, 2N6489, 2N6490, 2N6491 HARRI S SEniCOND SECTOR SbE D • File Number 4302271 üü40Sbb 678 4Tfl H H A S 15-A, 75-W, Silicon N-P-N and P-N-P Epitaxial-Base VERSAWATT Transistors Complementary Pairs for General-Purpose Switching and Amplifier Applications


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    PDF 2N6486, 2N6487, 2N6488, 2N6489, 2N6490, 2N6491 40Sbb RCA-2N6486-- 2n6489 2N6488 power amplifier circuit

    BCX70GL

    Abstract: BCX70HL BCX70JL BCX70KL MPS3904
    Text: MOT OROL A SC XSTRS/R F 1SE 0 I b3t,7aS4 OGflSiQB 1 | MAXIMUM RATINGS S ym bol Value U n it C o lle ctor-E m itter Voltage R ating VCEO 45 Vdc Collector-Base Voltage VCBO 45 Vdc Em itter-Base Voltage Vebo 5.0 Vdc ic 200 m A dc S ym bol M ax U n it PD 225 mW


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    PDF T-Xt-01 BCX70GL, OT-23 O-236AB) BCX70GL BCX70HL BCX70JL BCX70KL MPS3904