ISL9V3040D3S
Abstract: No abstract text available
Text: ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT General Description Applications The ISL9V3040D3S, ISL9V3040S3S, and ISL9V3040P3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D-Pak TO-252 , as well as the
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ISL9V3040D3S
ISL9V3040S3S
ISL9V3040P3
300mJ,
ISL9V3040D3S,
ISL9V3040S3S,
ISL9V3040P3
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ignition coil
Abstract: No abstract text available
Text: ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 EcoSPARKTM 200mJ, 400V, N-Channel Ignition IGBT General Description Applications The ISL9V2040D3S, ISL9V2040S3S, and ISL9V2040P3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D-Pak TO-252 , as well as the
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ISL9V2040D3S
ISL9V2040S3S
ISL9V2040P3
200mJ,
ISL9V2040D3S,
ISL9V2040S3S,
ISL9V2040P3
ignition coil
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V5036P
Abstract: IGBT DRIVER ignition coil automotive ISL9V5036P3 ISL9V5036S3ST
Text: ISL9V5036S3ST / ISL9V5036P3 / ISL9V5036S3 EcoSPARKTM 500mJ, 360V, N-Channel Ignition IGBT General Description Applications • Automotive Ignition Coil Driver Circuits • Coil-On Plug Applications The ISL9V5036S3ST, ISL9V5036P3, and ISL9V5036S3 are the next
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ISL9V5036S3ST
ISL9V5036P3
ISL9V5036S3
500mJ,
ISL9V5036S3ST,
ISL9V5036P3,
ISL9V5036S3
V5036P
IGBT DRIVER ignition coil automotive
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L1N06CL
Abstract: L1N06CLE RLP1N06CLE TA09880 TB334 TO-220AA
Text: RLP1N06CLE Data Sheet January 2002 1A, 55V, 0.750 Ohm,Voltage Clamping, Current Limited, N-Channel Power MOSFET Features • 1A, 55V The RLP1N06CLE is an intelligent monolithic power circuit which incorporates a lateral bipolar transistor, resistors, zener diodes, and a PowerMOS transistor. The current
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RLP1N06CLE
RLP1N06CLE
L1N06CL
L1N06CLE
TA09880
TB334
TO-220AA
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Untitled
Abstract: No abstract text available
Text: TE LEDYNE COMPONENTS EäE a w b a e D o üü ía4 3 â m g T-31-25 SD2204 SEMICONDUCTOR P-CHANNEL ENHANCEMENT MODE D-MOS FET ORDERING INFORMATION Sorted Chips in Conductive Waffle Pack TO-220AA TO-92 Plastic Package Description SD2204CHP SD2204BD -400V, 7000
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T-31-25
SD2204
O-220AA
SD2204CHP
SD2204BD
-400V,
-500pA
SD1201
-400V
OT-143)
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transistor d 1825 7c
Abstract: BU406
Text: SANYO SEMI CON DUCTOR CORP IB E D I BU406. 407 Tn?07b D00S4flti T ' 3 3 - / / NPN Epitaxial Planar Silicon Transistors 2010A C R T Horizontal Output Applications 1. Structure: Silicon NPN epitaxial planar transistor 2. Package: JEDEC: TO-220AB 3. Use: CRT display horizontal deflection output
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D00S4flti
BU406.
O-220AB
BU406
BU407
1S-126A
IS-20MA
transistor d 1825 7c
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Untitled
Abstract: No abstract text available
Text: sanyo s e m ic o n d u c t o r corp ~ 1 2 E D | 7 cH 7 Q 7 L i OOOSOb'J r ' 3 3 - I S NPN Triple Diffused Planar Silicon Transistor 2022 Color TV Horizontal Deflection Output Applications with Damper Diode 1222C Features: • High Breakdown Voltage and High Reliability.
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1222C
1S-126A
IS-20MA
IS-313
IS-313A
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transistor T K 2056
Abstract: K 2056 transistor transistor K 2056
Text: SANYO SEMICONDUCTOR 12E CORP D | 7 T ci 7 D 7 t 1 0 0 0 S S 0 0 g 32S C 4256 SS2SC4271 Silicon Transistor Silicon Transistor ' High Voltage Switching Applications Very High-Oefinrtion CR T Display Applications JEDEC: T 022 0 package JEDEC: T0126 package High breakdown voltage
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SS2SC4271
T0126
300mA,
100mA)
SS2SC4272
1S-126A
IS-20MA
transistor T K 2056
K 2056 transistor
transistor K 2056
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2SD1401
Abstract: 2042A 5033K
Text: SANYO SEMI CONDUCTOR CORP ÍSE D I 7 cH 7 a 7 b UDOSQflL, T' 33' 3 2SD1401 NPN Triple Diffused Planar Silicon Transistor 2022 Color TV Horizontal Deflection Output Applications 1268B Features: • High breakdown voltage and high reliability • High switching speed
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2SD1401
1268B
1S-126A
IS-20MA
IS-313
IS-313A
2SD1401
2042A
5033K
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2sb1303
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR ' CORP 1EE II | 7 1 1 7 0 71 1 O M S im T -il' £>l S S 2 S B 1 2 3 1 / 2 S D 1 841 S S 2 S B 1 3 2 5 /2 S D 1 999 Complementary Pair Silicon Transistors Complementary Pair Silicon Transistors Low Saturation Voltage Amp Applications Motor Driver Applications
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2SB1231,
2SB1232,
2SB1303,
2SB1323,
2SB1325,
2SB1346,
2SC4002,
2SC4003,
2SD1841,
2SD1842,
2sb1303
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2SC3173
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CORP 12E » I 7 CH 7 0 7 L , 0004311 7 T ' 53-11 2SC3173 NPN Epitaxial Planar Silicon Transistor 201OA C R T Display Horizontal Deflection Output Applications 1309B Features: ’ High switching speed • Especially suited for use in high-definition CRT display Vcc=6 to 12V
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H707L,
2SC3173
201OA
1309B
IS-20MA
IS-313
IS-313A
2SC3173
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2SD439
Abstract: 2SB559 transistor af 126 JIS G 3201
Text: SANYO SEMICONDUCTOR CORP 1EE D I 7 cH 7 G 7 b □ □ □ 3CIÛ2 S T - 3i-n 2SB559 PNP/ npn Epitaxial Planar Silicon Transistors 2009A Low Frequency Power Amp, Medium Speed Switching Applications 2SD439 372E Features . Large allowable collector dissipation and wide ASO.
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2SB559
2SD439
0DGB752
transistor af 126
JIS G 3201
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2SC930
Abstract: transistor 2SC930 2SC930NP 2SC2839 2SC930SPA 2SC930 D
Text: SANYO SEMICONDUCTOR CORP l^ifir|~^?cn 7 0 7 b % 2SC930 D004141 r-s/'/5r T “ 3 2 03 3 í - | 7 NPN. Epitaxial Planar Silico n Transistor 200 3 A AM Converter, FM RF • IF Amp Applications 545E The 2SC930 has two types of packges SPA and NP. Use • FM RF amp, mixer, OSC, converter, and IF amplifier.
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2SC930
2SC930SPA
2SC930NP
0DGB752
transistor 2SC930
2SC930NP
2SC2839
2SC930 D
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RCA413
Abstract: 2N5415 2N6079 RCA411 2N3439 2N3440 2N5840 2N6175 2N6177 2N6213
Text: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N] 2N5415
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TQ-66Ã
42x42
130x130
2N6177
2N3439
2N5415
2N358S
2N6213
2N6079
RCA413
2N5415
2N6079
RCA411
2N3439
2N3440
2N5840
2N6175
2N6177
2N6213
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40872
Abstract: 40594 40636 300W TRANSISTOR AUDIO AMPLIFIER 2N2102 2N4036 2N5492 2N5495 2N6103 2N6111
Text: POWER TRANSISTOR TYPES FOR AUD IO -FREQ U ENC Y Power Output 16Q 6 .5 16 4n 18 45 Output Transistors 8Ì2 Imped. Circuit P -N -P 40980 (2N 6111) True Comp. 40816 (2N 5495) (2N 6269) 40817 (2N 6111) - Comp. Darlington BDX 33 2N6386 BDX 34 TA8201 - True Comp.
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2N6292)
2N6111)
2N5495)
2N6269)
2N4036)
2N6386
TA8201
2N2102)
40872
40594
40636
300W TRANSISTOR AUDIO AMPLIFIER
2N2102
2N4036
2N5492
2N5495
2N6103
2N6111
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BD278
Abstract: TO-220-AA 2N6033 2N6079 2N6108 2N6102 2N6103 2N6032 2N6098 2N6099
Text: 2N6033 FAMILY [n-p-n] silicon f j = 50 MHz min; P j = 140 W max DESCRIPTION hFE V/*ES\(SUS) V p e r-t(sus) V/<cu(sill) V V V 2N TYPES l<"» A V « V •CER- "1A Temp.—°C V CF 25 150 V 1.3 1 50 40 5 2 4 2 50 40 0.05« 0.25» 250 8« 5« 250 0.5 1.2 0.2
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2N6033
2N6032
2N6079
2N6103
f2N6111
T0-220AB
2N6108
O-220AA
2N6109
BD278
TO-220-AA
2N6102
2N6098
2N6099
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2N3055 RCA
Abstract: rca413 RCA411 2N3440 rca rca 2n3055 rca 41013 2N5415 2N3772 RCA BUX 64 2N3439
Text: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N] 2N5415
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TQ-66Ã
42x42
130x130
2N6177
2N3439
2N5415
2N358S
2N6213
2N6079
2N3055 RCA
rca413
RCA411
2N3440 rca
rca 2n3055
rca 41013
2N5415
2N3772 RCA
BUX 64
2N3439
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wj 5 77
Abstract: 2SC3985 DDD3710 PA 2027A a 1201 sanyo
Text: SA N Y O SEMICONDUCTOR CORP r-3 3-, 2SC3985 2041 N P N P l a n a r S i l i c o n D a r li n g t o n T r a n s i s t o r Driver Applications 2218A Use . Switching of L load motor driver, printer hammer driver, relay driver Features . High DC current gain
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2SC3985
0DGB752
wj 5 77
DDD3710
PA 2027A
a 1201 sanyo
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mpc 1237
Abstract: transistor 2sd 511 transistor d325 TRANSISTOR C875 c537 transistor 2SD325 2SC693 2SC536D 2SC693E 2SB511
Text: SANYO SEMICONDUCTOR CORP 1BE D I TTTTDTh Q G 0 H 0 ci3 T-'is-Op 2SD325 N P N / pnp Triple Diffused Planar Silicon Transistors 201OA Low Frequency Power Amp Applications 2SB511 398F 5 Watts AF Power amplifier output use. There are complementary pair. :2SB511
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2sb511
Product81
0DGB752
mpc 1237
transistor 2sd 511
transistor d325
TRANSISTOR C875
c537 transistor
2SD325
2SC693
2SC536D
2SC693E
2SB511
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2SC2621
Abstract: ic sj 2038 TRANSISTOR ML5 sj 2038 12006A sj 2025 marking ML5 ic sj 2025 TO-220AA marking 2009a
Text: 2SC2621 NPN Triple Diffused Planar Silicon Transistor 2009A Color TV Chroma Output Applications E675A Absolute Maxi m u m Ratings at T a = 2 5 C Collector to Base Voltage CBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current
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2SC2621
200VtIE
0021J
2SC2621
ic sj 2038
TRANSISTOR ML5
sj 2038
12006A
sj 2025
marking ML5
ic sj 2025
TO-220AA
marking 2009a
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TRANSISTOR B507
Abstract: TRANSISTOR d313 D313 amplifier SD313 Sanyo D313 D313 VOLTAGE REGULATOR D313 power amplifier D313 for amplifier power supply with regulator D313 2SC1175 transistor
Text: SANYO SEMICONDUCTOR CORP 12E D | 7Ti7D7ti 0004007 T - 33- 2SD313, 3 1 4 • 2012 201 oA 2SB507, 508 NPN/pnp Triple Diffused Planar Silicon Transistors Low Frequency Power Amp Applications 396E .2SB507,2SB508 and 2SD313,2SD314 are complementary pairs respectively.
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T-33-^
2SB507,
2SB507
2SB508
2SD313
2SD314
2SB508,
2SD314,
TRANSISTOR B507
TRANSISTOR d313
D313 amplifier
SD313
Sanyo D313
D313 VOLTAGE REGULATOR
D313 power amplifier
D313 for amplifier
power supply with regulator D313
2SC1175 transistor
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TRANSISTOR FS 2025
Abstract: SILICON TRANSISTOR FS 2025 2SK775 JIS G3141 DDD3710 2052A DS-17 SANYO AKO 450
Text: SANYO SEMICONDUCTOR ISE D I CORP ? c]cì?Q7t. □aDSHS'ì □ | “~ r - 3 f - u 2SK775 Ñ -Channel M O S Silicon Field-Effect Transistor Very High Speed Switching Applications 2559 Features . Low ON resistance, very high-speed switching Absolute M a x i m Ratings at Ta=25°C
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2SK775
0DGB752
TRANSISTOR FS 2025
SILICON TRANSISTOR FS 2025
2SK775
JIS G3141
DDD3710
2052A
DS-17 SANYO
AKO 450
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2SA1210
Abstract: 2SC2912 P33-07 A1210 la 1201 sanyo TO-220AA transistor BC 536
Text: SANYO SEMICONDUCTOR CORP IE E D I 7 cH 7 0 7 b T - a - c n 2SC2912 NPN /pnp Epitaxial Planar Silicon Transistors 200 9A High Voltage Switching, AF 1 5 0 W Predriver Applications 2SA1210 780C Features • Adoption o f FBET process • High breakdown voltage
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2SC2912
707Li
2SA1210
Characteristics/H81
B1252
0DGB752
2SA1210
2SC2912
P33-07
A1210
la 1201 sanyo
TO-220AA
transistor BC 536
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d331 npn transistor
Abstract: D331 transistor la 1201 sanyo D331 PNP D330 NPN transistor transistor d331 d331 D331 NPN TRANSISTOR B514 D330 transistor
Text: SANYO SEMICONDUCTOR CORP 1EE 2SD330, 331 2SB514, 515 0004^05 Triple Diffused Planar Silicon Transistors N P N / pn p 2012 201OA D | _ 7 en 7 G 7 b Low Frequency Power Amp Applications 397D Especially suited for use in output stage of 10W AF Power amp. The only differ
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2SD330,
2SB514,
Q004T05
2SB514
DissipatioBH81
0DGB752
d331 npn transistor
D331 transistor
la 1201 sanyo
D331 PNP
D330 NPN transistor
transistor d331
d331
D331 NPN
TRANSISTOR B514
D330 transistor
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