SZP-2026Z
Abstract: rf transistor 2.5GHz SOF-26 transistor 2.4GHz amplifier schematic
Text: SZP-2026Z SZP-2026Z 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology
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SZP-2026Z
SOF-26
SZP-2026Z
SZP-2026Z-EVB1
SZP-2026Z-EVB2
EDS-104611
rf transistor 2.5GHz
SOF-26
transistor 2.4GHz amplifier schematic
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SZP-2026
Abstract: No abstract text available
Text: SZP-2026Z SZP-2026Z 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology
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SZP-2026Z
SOF-26
SZP-2026Z
SZP-2026Z"
DS110620
SZP2026ZSQ
SZP2026ZSR
SZP2026Z
SZP-2026
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SOF-26
Abstract: SZP-3026Z
Text: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with
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SZP-3026Z
SOF-26
SZP-3026Z
EDS-104666
SZP-3026Z*
SZP-3026Z-EVB1
SOF-26
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Untitled
Abstract: No abstract text available
Text: SZP-2026Z SZP-2026Z 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar P1dB =33.5dBm at 5V, 2.4GHz 802.11g 54Mb/s Class AB Performance
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SZP-2026Z
SOF-26
SZP-2026Z
54Mb/s
26dBm
27dBm
SZP-2026Zâ
DS110620
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Untitled
Abstract: No abstract text available
Text: SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier SZP-3026Z Preliminary 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor
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SZP-3026Z
SOF-26
SZP-3026Z
EDS-104666
SZP-3026Z*
SZP-3026Z-EVB1
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Untitled
Abstract: No abstract text available
Text: SZP SERIES 5X7 CERAMIC SMT 4 PAD VCTCXO PART NUMBERING GUIDE SZP SERIES FEATURES SZP 3 48 D - 10.000MHz ±2.5ppm STABILITY MINIATURE PACKAGE CLIPPED SINE WAVE VOLTAGE CONTROL TAPE AND REEL RoHS COMPLIANT 3.3±0.165V OR 5.0±0.25 SUPPLY VOLTAGE
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000MHz
10ppm
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Untitled
Abstract: No abstract text available
Text: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with
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SZP-3026Z
SOF-26
SZP-3026Z
DS110620
SZP3026ZSQ
SZP3026ZSR
SZP3026Z
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600S100JW250X
Abstract: 113 marking code transistor ROHM SZP3026 phemt transistor 30Ghz MCH185A1R0DK
Text: SZP-3026Z SZP-3026Z 3.0GHz to 3.8GHz 2W InGaP Amplifier 3.0GHz to 3.8GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SZP-3026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with
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SZP-3026Z
SZP-3026Z
SOF-26
DS110620
SZP3026ZSQ
SZP3026ZSR
SZP3026Z
SZP3026Z-EVB1
600S100JW250X
113 marking code transistor ROHM
SZP3026
phemt transistor 30Ghz
MCH185A1R0DK
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Untitled
Abstract: No abstract text available
Text: SZP-2026Z 2.2GHz to 2.7GHz 2W InGaP Amplifier SZP-2026Z Preliminary 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: SOF-26 Product Description Features RFMD’s SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor
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SZP-2026Z
SOF-26
SZP-2026Z
SZP-2026Z-EVB1
SZP-2026Z-EVB2
EDS-104611
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Untitled
Abstract: No abstract text available
Text: SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier SZP-5026Z Preliminary 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar
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SZP-5026Z
SOF-26
SZP-5026Z
SZP-5026Z-EVB1
SZP-5026Z-EVB2
15GHz
35GHz
EDS-105366
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SPB2026Z
Abstract: SZP-2026Z JESD22-A104B JESD22-A114 SOF-26 SPB-2026Z SZP-3026Z SZP 3 spa1526
Text: Reliability Qualification Report SZP-3026Z Products Qualified by Similarity SZP-2026Z SPB-2026Z SPA-1426Z SPA-1526Z Initial Qualification June 2005 The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for
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SZP-3026Z
SZP-2026Z
SPB-2026Z
SPA-1426Z
SPA-1526Z
RQR-104612-
SZP-3026Z
SZP-3026Z,
SPB2026Z
SZP-2026Z
JESD22-A104B
JESD22-A114
SOF-26
SPB-2026Z
SZP 3
spa1526
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Untitled
Abstract: No abstract text available
Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power
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SZP-5026Z
SOF-26
SZP-5026Z
DS111220
SZP5026ZSQ
SZP5026ZSR
SZP5026Z
15GHz
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SOF-26
Abstract: SZP-5026 SZP-5026Z 5.7Ghz low noise amplifier 600S4R7
Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power
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SZP-5026Z
SOF-26
SZP-5026Z
SZP-5026Z-EVB1
SZP-5026Z-EVB2
15GHz
35GHz
EDS-105366
SOF-26
SZP-5026
5.7Ghz low noise amplifier
600S4R7
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600S4R7
Abstract: 600S0R5CW250 0805HQ-5N6XJBB Coilcraft 0805 e483 SZP-5026 ZO21 szp-5026z 600S5R6 600S4R7cw250
Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power
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SZP-5026Z
SZP-5026Z
SOF-26
DS110620
SZP5026ZSQ
SZP5026ZSR
SZP5026Z
SZP5026Z-EVB1
600S4R7
600S0R5CW250
0805HQ-5N6XJBB
Coilcraft 0805
e483
SZP-5026
ZO21
600S5R6
600S4R7cw250
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transistor 2.4GHz amplifier schematic
Abstract: 2.4GHz amplifier schematic SZP-2026 SZP-2026Z 2.4GHz 2w Power Amplifier transistor SOF-26 szp2026z
Text: Preliminary Product Description Sirenza Microdevices’ SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with
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SZP-2026Z
EDS-104611
SZP-2026Z"
SZP-2026Z*
transistor 2.4GHz amplifier schematic
2.4GHz amplifier schematic
SZP-2026
2.4GHz 2w Power Amplifier transistor
SOF-26
szp2026z
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Description Sirenza Microdevices’ SZP-3026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with
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SZP-3026Z
EDS-104666
SZP-3026Zâ
SZP-3026Z*
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Description Sirenza Microdevices’ SZP-3026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with
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SZP-3026Z
EDS-104666
SZP-3026Z"
SZP-3026Z*
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SOF-26
Abstract: SZP-3026Z IN4016
Text: Preliminary Product Description Sirenza Microdevices’ SZP-3026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with
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SZP-3026Z
EDS-104666
SZP-3026Z"
SZP-3026Z*
SOF-26
IN4016
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SOF-26
Abstract: SZP-3026Z SZP-3026 IN4016
Text: Preliminary Product Description Sirenza Microdevices’ SZP-3026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with
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SZP-3026Z
EDS-104666
SZP-3026Z"
SZP-3026Z*
SOF-26
SZP-3026
IN4016
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Description Sirenza Microdevices’ SZP-3026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with
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SZP-3026Z
EDS-104666
SZP-3026Zâ
SZP-3026Z*
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transistor u8 2w
Abstract: No abstract text available
Text: Preliminary Product Description Sirenza Microdevices’ SZP-5026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with
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SZP-5026Z
EDS-105366
SZP-5026Z"
SZP-5026Z*
SZP-5026Z-EVB1
SZP-5026Z-EVB2
35GHz
SOF-26
transistor u8 2w
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2.4GHz 2w Power Amplifier transistor
Abstract: No abstract text available
Text: Preliminary Product Description Sirenza Microdevices’ SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with
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SZP-2026Z
EDS-104611
SZP-2026Z"
SZP-2026Z*
2.4GHz 2w Power Amplifier transistor
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Description Sirenza Microdevices’ SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP
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SZP-2026Z
EDS-104611
SZP-2026Z"
SZP-2026Z*
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Description Sirenza Microdevices’ SZP-3026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on
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SZP-3026Z
EDS-104666
SZP-3026Z"
SZP-3026Z*
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