Untitled
Abstract: No abstract text available
Text: SPECIFICATIONS Constituent: RF Antenna Cable Assembly RF JUMPER CABLE ASSEMBLY MMCX TO SMA WITH 1.13 COAXIAL CABLE Electrical Application Range: 0~35GHz Impedance: 50 Ohms nominal VSWR: 1.5max Insertion Loss: 1.2dB DRAWING ORDERING I NF OR MATI ON `ORDERING I NF OR MATI ON
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35GHz
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37GHz
Abstract: TGP2102
Text: Product Data Sheet August 5, 2008 35 GHz 5-Bit Phase Shifter TGP2102 Key Features and Performance • • • • • • • • Primary Applications • • Frequency Range: 32 - 37 GHz 7dB Nominal Insertion Loss 3.5deg RMS Phase Error @ 35GHz 0.4dB RMS Amp. Error @ 35GHz
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TGP2102
35GHz
41mm2
TGP2102
37GHz
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TGA4040
Abstract: TGA4031-SM 5V amplifier
Text: Not Recommended for New Designs Advance Product Information December 11, 2006 17 - 35GHz MPA/Multiplier TGA4040SM TriQuint Recommends the TGA4030-SM or TGA4031-SM be used for New Designs Key Features • • • • • • Frequency: 17 - 35 GHz 22 dB Nominal Gain @ Mid-band
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35GHz
TGA4040SM
TGA4030-SM
TGA4031-SM
TG4040SM
TGA4040
5V amplifier
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GRP1555C1H101JD01E
Abstract: No abstract text available
Text: Advance Product Information May 16, 2006 17 - 35GHz MPA/Multiplier TGA4040-SM Key Features • • • • • Frequency: 17 - 35 GHz 20 dB Nominal Gain @ Mid-band 18 dBm Nominal Output P1dB 2x and 3x Multiplier Function Package Dimensions: 5.0 x 5.0 x 1.1 mm
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35GHz
TGA4040-SM
TG4040-SM
TGA4040-SM
TGA4040SM
GRP1555C1H101JD01E
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CHR2294
Abstract: No abstract text available
Text: CHR2294 RoHS COMPLIANT 25-35GHz Single Side Band Mixer Self biased GaAs Monolithic Microwave IC Description The CHR2294 is a multifunction chip MFC which integrates a self biased LO buffer amplifier and a sub-harmonically balanced diodes mixer for 2LO suppression and image rejection. It is usable for
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CHR2294
25-35GHz
CHR2294
DSCHR22946180
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OC-768
Abstract: TGA4801 TGA4803 DC TO 20GHZ RF AMPLIFIER MMIC
Text: Advance Product Information May 21, 2007 DC-35GHz MPA with AGC TGA4801 OC-768 43Gb/s NRZ Lithium Niobate Modulator Driver Key Features and Performance • • • • • • • • 0.25um pHEMT Technology DC - 23GHz Linear BW DC - 35GHz Saturated Power BW
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DC-35GHz
TGA4801
OC-768
43Gb/s
23GHz
35GHz
TGA4801
24dBm
20GHz.
TGA4803
DC TO 20GHZ RF AMPLIFIER MMIC
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stacked transistors SOI RF
Abstract: TRANSISTOR PNP 5GHz SiGe PNP transistor 5GHz PNP transistor gummel transistor 5ghz pnp complementary npn-pnp RF Bipolar Transistor SILICON HIGH POWER bipolar npn TRANSISTOR Bipolar HJ
Text: A Complementary Bipolar Technology on SOI Featuring 50GHz NPN and 35GHz PNP Devices for High Performance RF Applications S. Nigrin, M. C. Wilson, S. Thomas, S. Connor and P. H. Osborne Zarlink Semiconductor, Cheney Manor, Swindon, Wiltshire, SN2 2QW, U.K.
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50GHz
35GHz
stacked transistors SOI RF
TRANSISTOR PNP 5GHz
SiGe PNP transistor
5GHz PNP transistor
gummel
transistor 5ghz pnp
complementary npn-pnp
RF Bipolar Transistor
SILICON HIGH POWER bipolar npn TRANSISTOR
Bipolar HJ
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ABD 630
Abstract: TGA4832
Text: Advance Product Information April 13, 2005 DC - 35 GHz Wideband Amplifier TGA4832 Key Features and Performance • • • • • • Frequency Range: DC to 35GHz Linear 40Gb/s Optical Modulator Driver 12dB Small Signal Gain 17 dBm Typical Output Power 4Vpp
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TGA4832
35GHz
40Gb/s
TGA4832
0007-inch
ABD 630
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CHR2294
Abstract: No abstract text available
Text: CHR2294 RoHS COMPLIANT 25-35GHz Single Side Band Mixer Self biased GaAs Monolithic Microwave IC Description The CHR2294 is a multifunction chip MFC which integrates a self biased LO buffer amplifier and a sub-harmonically balanced diodes mixer for 2LO suppression and image rejection. It is usable for
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CHR2294
25-35GHz
CHR2294
DSCHR22946180
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Untitled
Abstract: No abstract text available
Text: CHR2294 RoHS COMPLIANT 25-35GHz Single Side Band Mixer Self biased GaAs Monolithic Microwave IC Description The CHR2294 is a multifunction chip MFC which integrates a self biased LO buffer amplifier and a sub-harmonically balanced diodes mixer for 2LO suppression and image
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CHR2294
25-35GHz
CHR2294
DSCHR22940197
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Untitled
Abstract: No abstract text available
Text: Product Data Sheet August 5, 2008 35 GHz 5-Bit Phase Shifter TGP2102 Key Features and Performance • • • • • • • • Primary Applications • • Frequency Range: 32 - 37 GHz 7dB Nominal Insertion Loss 3.5deg RMS Phase Error @ 35GHz 0.4dB RMS Amp. Error @ 35GHz
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TGP2102
35GHz
TGP2102
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TGP2102-EPU
Abstract: No abstract text available
Text: Advance Product Information September 15, 2004 35 GHz 5-Bit Phase Shifter TGP2102-EPU Key Features and Performance • • • • • • • • Primary Applications • • Frequency Range: 32 - 37 GHz 7dB Nominal Insertion Loss 3.5deg RMS Phase Error @ 35GHz
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TGP2102-EPU
35GHz
41mm2
TGP2102-EPU
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CHR2294
Abstract: No abstract text available
Text: CHR2294 RoHS COMPLIANT 25-35GHz Single Side Band Mixer Self biased GaAs Monolithic Microwave IC Description The CHR2294 is a multifunction chip MFC which integrates a self biased LO buffer amplifier and a sub-harmonically balanced diodes mixer for 2LO suppression and image
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CHR2294
25-35GHz
CHR2294
DSCHR22940197
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TGA4801
Abstract: TGA4803 43Gb
Text: TGA4801 DC – 35 GHz MPA with AGC Key Features and Performance • • • • • • • • 0.25um pHEMT Technology DC - 23GHz Linear BW DC - 35GHz Saturated Power BW 14dB Small Signal Gain 10ps Edge Rates 20/80 7Vpp 43Gb/s NRZ PRBS Amplitude and Symmetry Control
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TGA4801
23GHz
35GHz
43Gb/s
TGA4801
24dBm
20GHz.
25GHz
35GHz.
0007-inch
TGA4803
43Gb
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3A001
Abstract: Ka-band free circuit diagram of rf id
Text: TGA2575 Ka-Band 4 Watt Power Amplifier Applications • • Electronic warfare Communications Product Features • • • • • • • Functional Block Diagram Frequency Range: 32.0 – 38.0 GHz Power: 36 dBm Psat PAE: 22% Gain: 18 dB Return Loss: 12 dB input, 12 dB output
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TGA2575
TGA2575
32GHz
38GHz,
36dBm
3A001
Ka-band
free circuit diagram of rf id
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Untitled
Abstract: No abstract text available
Text: Advance Product Information November 2, 2004 30-38 GHz Balanced Low Noise Amplifier TGA4511-EPU Key Features • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 3.5 V, Id = 110 mA 5 Noise Figure dB 0.15 um pHEMT Technology
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0007-inch
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Arrayed Waveguide Grating
Abstract: BKM-51000 arrayed waveguide W300C DWDM AWG Arrayed waveguide 50
Text: ASOC Arrayed Waveguide Grating AWG Dense Wavelength Division Multiplexing (DWDM) Multiplexer/Demultiplexer BKM-51000 Family Features As the demand for capacity continues to grow, DWDM solutions provide a fast route to increasing bandwidth. The ASOC Arrayed Waveguide Grating (AWG) offers high
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BKM-51000
100GHz
100GHz.
200GHz.
W300C,
Arrayed Waveguide Grating
arrayed waveguide
W300C
DWDM AWG
Arrayed waveguide 50
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Untitled
Abstract: No abstract text available
Text: SDA-5000 SDA-5000 GaAs Distributed Amplifier Package: Die, 2.2mm x 1.45mm x 0.102mm RFMD’s SDA-5000 is a directly coupled DC GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier designed to support a wide array of high frequency commercial, military, and space applications. They
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SDA-5000
102mm
SDA-5000
35GHz
17dBm
100mA
DS140210
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ML4708
Abstract: IMPATT
Text: ML 400« SERIES SILICON SINGLE DRIFT IMPATT DIODES The M L 4700 Series o f single drift silicon im patt diodes are specifically designed for use as fundam ental frequency direct dc to RF conversion microwave oscillators and amplifiers in the frequency range 5-35GHz.
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5-35GHz.
ML4708
IMPATT
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AP640R2-00
Abstract: No abstract text available
Text: GaAs MMIC SPDT PIN Switch 26-40 GHz Reflective AP640R2-00 Features • Broad Bandwidth, 26 - 40 GHz ■ Low Loss, < 1.1 dB ■ High Isolation, > 28 dB ■ Good Return Loss, <-9 dB ■ Fast Switching, < 2 ns ■ Low Power Consumption, < 25 mA Total at -5V ■ High Power Handling Capability, 37 dBm Peak,
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AP640R2-00
AP640R2-00
35GHz
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zo 103 ma
Abstract: No abstract text available
Text: O K I electronic components KGF1531_ Small-Signal Amplifier fo r UHF-Band and PCS Frequencies GENERAL DESCRIPTION The KGF1531 is a high-performance GaAs FET sm all-signal dual-gate m ixer for L band frequencies that features low -voltage operation, low-current dissipation, high conversion gain,
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Untitled
Abstract: No abstract text available
Text: PBtttt G E C P L E S S E Y DC1823 PLANAR DOPED BARRIER Q BAND MICROSTRIP BEAM LEAD DETECTOR DIODE Planar Doped Barrier PDB diodes represent a major advancement in detector technology. These diodes offer very high tangential sensitivity, high compression point and very
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DC1823
-57dBm
110mV
35GHz
-54dBm
150pA
250mV
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Untitled
Abstract: No abstract text available
Text: • 37bflSS2 QQ1ÔSQG flflT « P L S B GEC PLES S EY DC1820 Series PLANAR DOPED BARRIER MICROSTRIP BEAM LEAD MIXER DIODES Planar doped barrier PDB beam lead mixer diodes represent a major advancement in mixer/detector technology. These diodes offer good conversion loss at low local oscillator
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37bflSS2
DC1820
DC1820
DC1821
DC1822
DCI824
375GHz
35GHz
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6CL6A
Abstract: TBA+150A
Text: 37bôSSS 001B5QS 3b0 «PI-SB Si G E C P L E S S E Y S E M I C O N D U C T O R S DC1840 Series PLANAR DOPED BARRIER MICROSTRIP LID/MICROLID MIXER DIODES Planar doped barrier PDB LID/MICROLID mixer diodes represent a major advancement in mixer/detector technology.
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001B5QS
DC1840
375GHz
35GHz
200ft
37bfi522
DC1840
DC1842
6CL6A
TBA+150A
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