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    STTB506

    Abstract: 1B13
    Text: STTB506B -TR  TURBOSWITCHTM ”B” . ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 5A VRRM VF (max) 600 V 1.3 V trr (typ) 45 ns PRELIMINARY DATASHEET 2, 4 (Tab) 3 FEATURES AND BENEFITS 4 SPECIFIC TO THE FOLLOWING OPERATIONS : SNUBBING OR CLAMPING, DEMAGNETIZATION AND RECTIFICATION, FREEWHEEL OR


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    PDF STTB506B STTB506 1B13

    STTB506B

    Abstract: No abstract text available
    Text: STTB506B -TR  TURBOSWITCHTM "B" . ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 5A VRRM 600 V VF (max) 1.3 V trr (typ) 45 ns PRELIMINARY DATASHEET 2, 4 (Tab) 3 FEATURES AND BENEFITS 4 SPECIFIC TO THE FOLLOWING OPERATIONS : SNUBBING OR CLAMPING, DEMAGNETIZATION AND RECTIFICATION, FREEWHEEL OR


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    PDF STTB506B

    BYW19-1000

    Abstract: BYX49-600 BYX49-1200 BYV72E-200 RS8MT byx49 BY229-1000 UNITRODE CROSS BYT29-300 BYV72-200
    Text: 41892.6 - FO-012 CROSSREF 11/19/98 10:54 AM Page 1 Harris Semiconductor-An Industry Leader For More Information: Harris Semiconductor comprises one sector of Harris Harris Marketing Support and ask for extension #7820


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    PDF FO-012 1-800-4-HARRIS BYW19-1000 BYX49-600 BYX49-1200 BYV72E-200 RS8MT byx49 BY229-1000 UNITRODE CROSS BYT29-300 BYV72-200

    STTA12

    Abstract: BYT261PIV1000 byt12pi-1000 sttb6006p STTB6006 STTA312B VRRM 600 IO 20 sttb-406 STTA50 E81734
    Text: DIODES TURBOSWITCHTM HIGH VOLTAGE RECTIFIERS SMB SMC DPAK D2PAK TM SURFACE MOUNT TURBOSWITCH RECTIFIERS TJ max =150°C IR @ 80% VRRM (mA) tRR IRM (V) VF @ rated IO (V) (ns) (A) 600 600 1200 600 600 1200 600 600 1200 600 600 1200 600 1200 600 600 1.5 1.3


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    PDF STTA106U STTB106U STTA112U STTA206S STTB206S STTA212S STTA306B STTB306B STTA312B STTA506B STTA12 BYT261PIV1000 byt12pi-1000 sttb6006p STTB6006 VRRM 600 IO 20 sttb-406 STTA50 E81734

    BYX49-600

    Abstract: BYW19-1000 BY229-1000 motorola diode cross reference BYX49 1200 BYX49-1200 BYV72E-200 BYT29 BYT29-300 BY229/1000
    Text: FO-012.1 5/12/00 12:05 PM Page 1 I N T E R S I L C O R P O R AT I O N B U I L D I N G S I L I C O N A D V A N TA G E S F O R T EC H N O LO GY U LT R A F A S T A N D H Y P E R F A S T RECTIFIERS Intersil Corporation provides the silicon advantage in a burgeoning market


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    PDF FO-012 O-252, O-263) O-247 O-251/TO-252 Rating/10 O-220AC O-218 O-204AA BYX49-600 BYW19-1000 BY229-1000 motorola diode cross reference BYX49 1200 BYX49-1200 BYV72E-200 BYT29 BYT29-300 BY229/1000

    sttb6006p

    Abstract: BYT12PI-1000 STTA3006PI STTB3006P irm 38 STTA112U STTA206S STTA306B STTA312B STTB106U
    Text: POWER RECTIFIERS TURBOSWITCHTM DIODES SMB SMC DPAK 2 D PAK TM SURFACE MOUNT TURBOSWITCH RECTIFIERS TJ max =150°C IR @ 80% VRRM (mA) tRR IRM (V) VF @ rated IO (V) (ns) (A) 600 600 1200 600 600 1200 600 600 1200 600 600 1200 600 1200 600 600 1.5 1.2 1.5 1.5


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    PDF STTA106U STTB106U STTA112U STTA206S STTB206S STTA212S STTA1512PI STTA2006PI STTA3006PI BYT30PI-1000 sttb6006p BYT12PI-1000 STTA3006PI STTB3006P irm 38 STTA112U STTA206S STTA306B STTA312B STTB106U

    Untitled

    Abstract: No abstract text available
    Text: Æ T SGS-THOMSON n0MilU10TI3 [fflnei STTB506B -TR TURBOSWITCH ”B” . ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f (a v ) 5A V rrm 600 V Vf trr (max) 1.3 V (typ) 45 ns P R ELIM IN ARY DATASHEET FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERATIONS:


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    PDF n0MilU10TI3Â STTB506B

    diode sg 45

    Abstract: STTB506B transistor 600v 500a SG-45 diode fast recovery diode 400v 5A power DIODES diode sg 5a 5a son
    Text: f Z T SGS-THOMSON Ä T# RfflD g^(ô ILI ¥^@R3D(Si STTB506B(-TR) TURBOSWITCH " B " . ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS If(av) 5A V rrm 600 V 1.3V V f (max) tr r (typ) PRELIMINARY DATASHEET 45 ns FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERATIONS:


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    PDF STTB506B diode sg 45 transistor 600v 500a SG-45 diode fast recovery diode 400v 5A power DIODES diode sg 5a 5a son