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    STRATAFLASH 256 X 2 MBITS Search Results

    STRATAFLASH 256 X 2 MBITS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AT49BV640D-70CI Rochester Electronics LLC AT49BV640D - 64-Mbit (4M x 16), Sectored Flash Visit Rochester Electronics LLC Buy
    R1Q2A7236ABB-40IB1 Renesas Electronics Corporation 72-Mbit QDR™II SRAM 2-word Burst Visit Renesas Electronics Corporation
    R1QDA7218ABB-20IB1 Renesas Electronics Corporation 72-Mbit QDR™II+ SRAM 4-word Burst Visit Renesas Electronics Corporation
    AT25EU0011A-SSHN-T Renesas Electronics Corporation 1 Mbit Ultra-low Energy Serial Flash Memory Visit Renesas Electronics Corporation
    AT25EU0041A-SSHN-T Renesas Electronics Corporation 4 Mbit Ultra-low Energy Serial Flash Memory Visit Renesas Electronics Corporation

    STRATAFLASH 256 X 2 MBITS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PF38F4050L0ZTQ0

    Abstract: PF38F3040 numonyx 106 ball RD38F4455 PF48F4400L0 RD38F40 PF38F4050 numonyx 107-ball Numonyx StrataFlash M18
    Text: Numonyx StrataFlash Wireless Memory L18/L30 SCSP 768-Mbit LQ Family with Asynchronous PSRAM/SRAM Datasheet Product Features „ „ „ „ „ „ Device Architecture — Flash die density: 128-, 256-Mbit — Async PSRAM density: 16-, 32-, 64-Mbit — Async SRAM density: 8-Mbit


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    PDF L18/L30 768-Mbit 256-Mbit 64-Mbit 16-Mbit PF38F4050L0ZTQ0 PF38F3040 numonyx 106 ball RD38F4455 PF48F4400L0 RD38F40 PF38F4050 numonyx 107-ball Numonyx StrataFlash M18

    3076* intel

    Abstract: 3098* intel
    Text: Intel StrataFlash Cellular Memory M18 2048-Mbit M18 Family with Synchronous PSRAM Product Features Datasheet Device Architecture Flash Performance — Flash Die Density: 256 or 512-Mbit — 96 ns Initial Read Access; 15 ns Asynchronous Page-Mode Read — PSRAM Die Density: 64 or 128-Mbit


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    PDF 2048-Mbit 512-Mbit 128-Mbit 133MHz 3076* intel 3098* intel

    PF38F3040

    Abstract: PF38F4050 PF38F4050L0 3144* intel l18scsp
    Text: Intel StrataFlash Wireless Memory L18 SCSP 768-Mbit L18 Family with Synchronous PSRAM Datasheet Product Features Device Architecture — Flash Die Density: 128 or 256-Mbit — PSRAM Die Density: 32 or 64-Mbit — x16 Non-Mux or ADMux I/O Interface Option


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    PDF 768-Mbit 256-Mbit 64-Mbit 11x13 PF38F3040 PF38F4050 PF38F4050L0 3144* intel l18scsp

    RD38F4

    Abstract: 1024-Mbit rd58f0012lvybb0 30094* intel
    Text: Intel StrataFlash Wireless Memory System LV18 SCSP 1024-Mbit LVX Family with LPSDRAM Datasheet Product Features • ■ ■ ■ ■ ■ Device Memory Architecture — Flash die density: 128-, 256-Mbit — LPSDRAM die density: 128-, 256-Mbit — Top or Bottom parameter flash


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    PDF 1024-Mbit 256-Mbit 16-KWord 64-KWord 128-Mbit 256-Mbit 128-Mbit 32-Mbit 64-Mbit RD38F4 rd58f0012lvybb0 30094* intel

    PF38F4470LLyBB0

    Abstract: numonyx 106 ball numonyx 107-ball 8 to 256 decoder using 4 t0 16 decoders
    Text: Numonyx StrataFlash Wireless Memory L18 512-Mbit LX Family with LPSDRAM (x16) Datasheet Product Features „ „ „ „ „ „ Device Architecture — Flash die density: 128- or 256-Mbit — LPSDRAM die density: 128- or 256-Mbit — Async SRAM die density: 8-Mbit


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    PDF 512-Mbit 256-Mbit x32SH x16SB x16/x32 PF38F4470LLyBB0 numonyx 106 ball numonyx 107-ball 8 to 256 decoder using 4 t0 16 decoders

    strataflash 256 x 2 Mbits

    Abstract: Migration Guide for Intel StrataFlash Memory J 253854 Intel SCSP 253853
    Text: Intel StrataFlash£ Wireless Memory System LV18 SCSP 1024-Mbit LVX Family with LPSDRAM Datasheet Product Features • ■ ■ ■ ■ ■ Device Memory Architecture — Flash density: 128- and 256-Mbit — LPSDRAM density: 128, 256 Mbit — Top/Bottom parameter flash


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    PDF 1024-Mbit 256-Mbit 16-KWord 64-KWord 32-Mbit 64-Mbit 128-Mbit 16-Mbit strataflash 256 x 2 Mbits Migration Guide for Intel StrataFlash Memory J 253854 Intel SCSP 253853

    Untitled

    Abstract: No abstract text available
    Text: Intel StrataFlash£ Wireless Memory System LV18 SCSP 1024-Mbit LVX Family with LPSDRAM Datasheet Product Features • ■ ■ ■ ■ ■ Device Memory Architecture — Flash density: 128- and 256-Mbit — LPSDRAM density: 128, 256 Mbit — Top/Bottom parameter flash


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    PDF 1024-Mbit 256-Mbit 16-KWord 64-KWord 32-Mbit 64-Mbit 128-Mbit 16-Mbit

    RFUS 20

    Abstract: 298161 strataflash 256 x 2 Mbits
    Text: Intel StrataFlash£ Wireless Memory System LV18 SCSP 1024-Mbit LVX Family with LPSDRAM Datasheet Product Features • ■ ■ ■ ■ ■ Device Memory Architecture — Flash density: 128- and 256-Mbit — LPSDRAM density: 128, 256 Mbit — Top/Bottom parameter flash


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    PDF 1024-Mbit 256-Mbit 16-KWord 64-KWord 32-Mbit 64-Mbit 128-Mbit 16-Mbit RFUS 20 298161 strataflash 256 x 2 Mbits

    SANDISK NAND ID code

    Abstract: Sandisk TSOP MICRON NAND MLC DATASHEET intel nand flash transistor poly3 SANDISK NAND NAND FLASH BGA Datasheet Micron MLC Sandisk NAND Flash memory controller ecc nand flash gbit
    Text: P E R S P E C T I V E S O N P O R T A B L E D E S I G N Flash developments empower portables Flash chip sizes are shrinking as power goes down, yet the number of package options and IC technologies are exploding. T echnological innovation and a buyer’s market are combining to


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    spartan 3e vga ucf

    Abstract: 512MBDDRx4x8x16 LVCMOS33
    Text: MicroBlaze Development Kit Spartan-3E 1600E Edition User Guide UG257 v1.1 December 5, 2007 R R Xilinx is disclosing this Document and Intellectual Property (hereinafter “the Design”) to you for use in the development of designs to operate on, or interface with Xilinx FPGAs. Except as stated herein, none of the Design may be copied, reproduced, distributed, republished,


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    PDF 1600E UG257 LVCMOS33 spartan 3e vga ucf 512MBDDRx4x8x16 LVCMOS33

    2-line 16-character LCD screen

    Abstract: spartan 3e vga ucf vhdl code for lcd of spartan3E analog to digital converter vhdl coding spartan 3e crt horizontal deflection circuit LTC1407A-1 ON SPARTAN 3E LAN83C185 vhdl code microblaze ethernet XC3S500E keyboard UG230
    Text: Spartan-3E Starter Kit Board User Guide UG230 v1.0 March 9, 2006 Click a component to jump to the related documentation. Not all components have active links. R R Xilinx is disclosing this Document and Intellectual Property (hereinafter “the Design”) to you for use in the development of designs to operate


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    PDF UG230 LVCMOS33 2-line 16-character LCD screen spartan 3e vga ucf vhdl code for lcd of spartan3E analog to digital converter vhdl coding spartan 3e crt horizontal deflection circuit LTC1407A-1 ON SPARTAN 3E LAN83C185 vhdl code microblaze ethernet XC3S500E keyboard UG230

    ug230

    Abstract: XILINX/SPARTAN 3E STARTER BOARD spartan 3e vga ucf VHDL code for ADC and DAC SPI with FPGA spartan 3 spi flash programmer schematic SPARTAN 3E STARTER BOARD xc2c64a-vq44 vhdl code for lcd of spartan3E M25P16 powertip pc1602
    Text: Spartan-3E FPGA Starter Kit Board User Guide UG230 v1.1 June 20, 2008 R R Xilinx is disclosing this Document and Intellectual Property (hereinafter “the Design”) to you for use in the development of designs to operate on, or interface with Xilinx FPGAs. Except as stated herein, none of the Design may be copied, reproduced, distributed, republished,


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    PDF UG230 LVCMOS33 ug230 XILINX/SPARTAN 3E STARTER BOARD spartan 3e vga ucf VHDL code for ADC and DAC SPI with FPGA spartan 3 spi flash programmer schematic SPARTAN 3E STARTER BOARD xc2c64a-vq44 vhdl code for lcd of spartan3E M25P16 powertip pc1602

    written

    Abstract: UG230
    Text: Spartan-3E FPGA Starter Kit Board User Guide UG230 v1.2 January 20, 2011 R R Xilinx is disclosing this Document and Intellectual Property (hereinafter “the Design”) to you for use in the development of designs to operate on, or interface with Xilinx FPGAs. Except as stated herein, none of the Design may be copied, reproduced, distributed, republished,


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    PDF UG230 written UG230

    256l18

    Abstract: 256l30 sar106 1024Mbit 1024-Mbit PF48F 298132 PBA 16-10
    Text: Intel StrataFlash£ Wireless Memory System LV18/LV30 SCSP 1024-Mbit LV Family Datasheet Product Features • ■ ■ ■ ■ Device Architecture — Flash die density: 128-, 256-Mbit — Top or Bottom flash parameter configuration Device Voltage — Core: VCC = 1.8 V (Typ)


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    PDF LV18/LV30 1024-Mbit 256-Mbit 16-KWord 64-KWord 38F/48F 32-Mbit 64-Mbit 128-Mbit 256l18 256l30 sar106 1024Mbit PF48F 298132 PBA 16-10

    Untitled

    Abstract: No abstract text available
    Text: NAND16GW3C4B 16-Gbit 2 x 8 Gbits , two Chip Enable, 2112-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 16 Gbits of memory array – 512 Mbits of spare area


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    PDF NAND16GW3C4B 16-Gbit 2112-byte

    NAND32GW3F4A

    Abstract: No abstract text available
    Text: NAND32GW3F4A 32-Gbit 4 x 8 Gbits , two Chip Enable, 4224-byte page, 3 V supply, single level, multiplane, NAND flash memory Preliminary Data Features • High-density NAND flash memory – 32 Gbits of memory array – 1024 Mbits of spare area – Cost-effective solutions for mass storage


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    PDF NAND32GW3F4A 32-Gbit 4224-byte NAND32GW3F4A

    JESD97

    Abstract: NAND08GW3C2B NAND16GW3C4B 16Gbit
    Text: NAND16GW3C4B 16-Gbit 2 x 8 Gbits , two Chip Enable, 2112-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 16 Gbits of memory array – 512 Mbits of spare area


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    PDF NAND16GW3C4B 16-Gbit 2112-byte JESD97 NAND08GW3C2B NAND16GW3C4B 16Gbit

    RAS 0510

    Abstract: NAND98R3M0 NAND99R NAND99W3M1 Numonyx MCP nand98 SDR256 NAND98W NAND98W3M0 NAND98R
    Text: NANDxxxxMx 256/512-Mbit or 1-Gbit x8/x16, 1.8/2.6 V, 528-byte page NAND flash and 256/512-Mbit (x16/x32, 1.8 V) LPSDRAM, MCP or PoP Features n n n Packages – MCP (multichip package) – PoP (package on package) Device composition – 1 die of 256 or 512 Mbits or 1 Gbit (x8/x16)


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    PDF 256/512-Mbit x8/x16, 528-byte 256/512-Mbit x16/x32, x8/x16) TFBGA107 TFBGA149 TFBGA137 LFBGA137 RAS 0510 NAND98R3M0 NAND99R NAND99W3M1 Numonyx MCP nand98 SDR256 NAND98W NAND98W3M0 NAND98R

    NAND98W3M0

    Abstract: NAND98R3M0 NAND99R NAND98R
    Text: NANDxxxxMx 256/512-Mbit or 1-Gbit x8/x16, 1.8/2.6 V, 528-byte page NAND flash and 256/512-Mbit (x16/x32, 1.8 V) LPSDRAM, MCP or PoP Features Packages – MCP (multichip package) – PoP (package on package) • Device composition – 1 die of 256 or 512 Mbits or 1 Gbit (x8/x16)


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    PDF 256/512-Mbit x8/x16, 528-byte 256/512-Mbit x16/x32, x8/x16) TFBGA107 TFBGA149 TFBGA137 TFBGA152 NAND98W3M0 NAND98R3M0 NAND99R NAND98R

    TAG 8922

    Abstract: intel FDI APC UPS CIRCUIT DIAGRAM APC UPS repair Intel SCSP 28F128J3A 28F320J3A 28F320J5 28F640J3A 28F640J5
    Text: Intel Flash Data Integrator FDI User’s Guide Version 4 August 2001 Order Number: 297833-007 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no liability


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    PDF 16-bit TAG 8922 intel FDI APC UPS CIRCUIT DIAGRAM APC UPS repair Intel SCSP 28F128J3A 28F320J3A 28F320J5 28F640J3A 28F640J5

    M36L0R7050U3

    Abstract: M69KM024A M36L0R7050UL3 ADQ14 M36L0R8060L3 Numonyx MCP M69KM048AB
    Text: M36L0Rx0x0UL3 128- or 256-Mbit mux I/O, multiple bank, multilevel, burst flash memory, and 32- or 64-Mbit PSRAM, 1.8 V supply MCP Target Specification Features • ■ ■ Multichip package – 1 die of 128 Mbits (8 Mbits x16) or 256 Mbits (16 Mbits x16), mux I/O multiple


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    PDF M36L0Rx0x0UL3 256-Mbit 64-Mbit M36L0R7050U3/M36L0R7060U3: 882Eh M36L0R8050U3/M36L0R8060U3: 881Ch M36L0R7050L3/M36L0R7060L3: 882Fh M36L0R8050L3/M36L0R8060L3: M36L0R7050U3 M69KM024A M36L0R7050UL3 ADQ14 M36L0R8060L3 Numonyx MCP M69KM048AB

    TFBGA105

    Abstract: M58PR512J JESD97 M39P0R9080E0 TFBGA-105 strataflash 512mbit
    Text: M39P0R9080E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory


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    PDF M39P0R9080E0 TFBGA105 TFBGA105 M58PR512J JESD97 M39P0R9080E0 TFBGA-105 strataflash 512mbit

    TFBGA105

    Abstract: KF256 TFBGA-105 M39P0R8070E2 M58PR256J M58PR512J M65KA128AE A12-Amax
    Text: M39P0R8070E2 M39P0R9070E2 256 or 512Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 256 (16Mb x 16) or 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst)


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    PDF M39P0R8070E2 M39P0R9070E2 512Mbit TFBGA105 64-bit TFBGA105 KF256 TFBGA-105 M39P0R8070E2 M58PR256J M58PR512J M65KA128AE A12-Amax

    M36P0R8070E0

    Abstract: M58PR256J M69KB128AA strataflash 256 x 2 Mbits ECR15
    Text: M36P0R8070E0 256 Mbit x16, multiple bank, multilevel, burst Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package Features • ■ Multichip package – 1 die of 256 Mbit (16 Mb x 16, multiple bank, multilevel, burst) Flash memory – 1 die of 128 Mbit (8 Mb x16) PSRAM


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    PDF M36P0R8070E0 TFBGA107 M36P0R8070E0 M58PR256J M69KB128AA strataflash 256 x 2 Mbits ECR15