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    S3C2443X

    Abstract: s3c2443 SMDK2443 OPENice-A1000 mxd128p3 smdk HS-MMC card connector HS_SPI HS-MMC connector samsung lcd JTAG
    Text: S3C2443X 1 ABOUT SMDK2443 BOARD ABOUT SMDK2443 BOARD VER 0.0 SYSTEM OVERVIEW SMDK2443 Samsung MCU Development Kit for S3C2443X is a platform that is suitable for code development of SAMSUNG's S3C2443X 16/32-bit RISC microcontroller (ARM920T) for hand-held devices and general


    Original     		PDF S3C2443X SMDK2443 SMDK2443 S3C2443X 16/32-bit ARM920T) 16-/32-bit s3c2443 OPENice-A1000 mxd128p3 smdk HS-MMC card connector HS_SPI HS-MMC connector samsung lcd JTAG

    NAND01GW3B2C

    Abstract: NAND01GW3B2B nand01gw3b2cza6
    Text: NAND01G-B2C 1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory Preliminary Data Features • NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3.0 V ■ Page size


    Original     		PDF NAND01G-B2C 2112-byte/1056-word NAND01GW3B2C NAND01GW3B2B nand01gw3b2cza6

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Rev.1.2 23.03.2012 1024MB DDR3 – SDRAM SO-DIMM 204 Pin SO-DIMM Features: SGN01G64D2BG1SA-xxRT • 1GByte in FBGA Technology •     RoHS compliant Options:  Data Rate / Latency DDR3 1066 MT/s CL7 DDR3 1333 MT/s CL9 DDR3 1600 MT/s CL11


    Original     		PDF 1024MB SGN01G64D2BG1SA-xxRT 204-pin 64-bit CH-9552 SGN01G64D2BG1SA-xxxRT 2002/96/EC 2011/65/EU

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Rev.1.4 24.11.2010 2GB DDR2 – SDRAM SO-DIMM Features: • 200 Pin SO-DIMM SEN02G64C4BH2MT-25R 2GB PC2-6400 in FBGA Technology RoHS compliant Options: • Data Rate / Latency DDR2 800 MHz CL6 DDR2 667 MHz CL5 DDR2 533 MHz CL4 Marking -25 -30 -37


    Original     		PDF SEN02G64C4BH2MT-25R PC2-6400 2048MB CH-9552

    Intel SCSP

    Abstract: R101 R102 R202 R203 253853
    Text: Intel StrataFlash£ Wireless Memory System LV18/LV30 SCSP 1024-Mbit LV Family Datasheet Product Features • ■ ■ ■ ■ Device Architecture — Flash density: 128-, 256-Mbit — Top or Bottom flash parameter configuration Device Voltage — Core: VCC = 1.8 V (Typ)


    Original     		PDF LV18/LV30 1024-Mbit 256-Mbit 16-KWord 64-KWord Intel SCSP R101 R102 R202 R203 253853

    256l18

    Abstract: 256l30 sar106 1024Mbit 1024-Mbit PF48F 298132 PBA 16-10
    Text: Intel StrataFlash£ Wireless Memory System LV18/LV30 SCSP 1024-Mbit LV Family Datasheet Product Features • ■ ■ ■ ■ Device Architecture — Flash die density: 128-, 256-Mbit — Top or Bottom flash parameter configuration Device Voltage — Core: VCC = 1.8 V (Typ)


    Original     		PDF LV18/LV30 1024-Mbit 256-Mbit 16-KWord 64-KWord 38F/48F 32-Mbit 64-Mbit 128-Mbit 256l18 256l30 sar106 1024Mbit PF48F 298132 PBA 16-10

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Rev.1.3 09.11.2010 2GB DDR2 – SDRAM SO-DIMM Features: • 200 Pin SO-DIMM SEN02G64C4BF2SA-25R 2GB PC2-6400 in FBGA Technology RoHS compliant Options: • Data Rate / Latency DDR2 800 MT/s CL6 DDR2 667 MT/s CL5 DDR2 533 MT/s CL4 Marking -25 -30


    Original     		PDF SEN02G64C4BF2SA-25R PC2-6400 2048MB CH-9552

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Rev.1.2 02.12.2010 2GB DDR2 – SDRAM DIMM Features: 240 Pin UDIMM • SEU02G64B3BH2MT-25R •      2GB PC2-6400 in FBGA Technology RoHS compliant Options:  Data Rate / Latency DDR2 800 MT/s CL6 DDR2 667 MT/s CL5  Module Density


    Original     		PDF SEU02G64B3BH2MT-25R PC2-6400 2048MB CH-9552

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Rev.1.1 29.11.2010 2GB ECC DDR2 – SDRAM DIMM Features: • 240 Pin ECC UDIMM SEU02G72D4BH2MT-30R 2GB PC2-5300 in FBGA Technology RoHS compliant •    Options:     Data Rate / Latency DDR2 667 MT/s CL5 DDR2 533 MT/s CL4 Marking


    Original     		PDF SEU02G72D4BH2MT-30R PC2-5300 2048MB

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Rev.1.0 14.01.2011 1024MB DDR3 – SDRAM UDIMM 240 Pin UDIMM Features: SGU01G64A1BG1MT-xxR • 1GByte in FBGA Technology •     RoHS compliant Options:  Data Rate / Latency DDR3 1066 MT/s CL7 DDR3 1333 MT/s CL9  Module Density


    Original     		PDF 1024MB SGU01G64A1BG1MT-xxR CH-9552

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Rev.1.4 24.11.2010 2GB DDR2 – SDRAM SO-DIMM Features: • 200 Pin SO-DIMM SEN02G64C4BH2MT-25R 2GB PC2-6400 in FBGA Technology RoHS compliant Options: • Data Rate / Latency DDR2 800 MHz CL6 DDR2 667 MHz CL5 DDR2 533 MHz CL4 Marking -25 -30 -37


    Original     		PDF SEN02G64C4BH2MT-25R PC2-6400 2048MB CH-9552

    RD38F4

    Abstract: 1024-Mbit rd58f0012lvybb0 30094* intel
    Text: Intel StrataFlash Wireless Memory System LV18 SCSP 1024-Mbit LVX Family with LPSDRAM Datasheet Product Features • ■ ■ ■ ■ ■ Device Memory Architecture — Flash die density: 128-, 256-Mbit — LPSDRAM die density: 128-, 256-Mbit — Top or Bottom parameter flash


    Original     		PDF 1024-Mbit 256-Mbit 16-KWord 64-KWord 128-Mbit 256-Mbit 128-Mbit 32-Mbit 64-Mbit RD38F4 rd58f0012lvybb0 30094* intel

    253852

    Abstract: No abstract text available
    Text: Intel StrataFlash£ Wireless Memory System LV18/LV30 SCSP 768-Mbit LVQ Family with Asynchronous Static RAM Datasheet Product Features • ■ ■ ■ ■ ■ Device Architecture — Flash density: 64-, 128-, 256-Mbit — PSRAM density: 32-, 64-, 128-Mbit


    Original     		PDF LV18/LV30 768-Mbit 256-Mbit 128-Mbit 100-K LV18/LV30) 8x11x1 RD38F4420LVYTQ0 RD38F4420LVYBQ0 253852

    Untitled

    Abstract: No abstract text available
    Text: NAND01GR3B2C NAND01GW3B2C NAND01GR4B2C NAND01GW4B2C 1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Preliminary Data Features • NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities


    Original     		PDF NAND01GR3B2C NAND01GW3B2C NAND01GR4B2C NAND01GW4B2C 2112-byte/1056-word

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Rev.1.2 03.11.2010 512MB DDR2 – SDRAM SO-DIMM Features: • 200 Pin SO-DIMM SEN06464H2CH1MT-25R 512MB PC2-6400 in FBGA Technology RoHS compliant Options: • Data Rate / Latency DDR2 667 MT/s CL5 DDR2 800 MT/s CL6  Module density 512MB with 4 dies and 1 rank


    Original     		PDF 512MB SEN06464H2CH1MT-25R PC2-6400 CH-9552

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Rev.1.2 09.11.2010 1GB DDR2 – SDRAM SO-DIMM Features: 200 Pin SO-DIMM • SEN01G64D1BF1SA-30R 1GB PC2-6400 in FBGA Technology RoHS compliant Options: • Data Rate / Latency DDR2 800 MT/s CL6 DDR2 667 MT/s CL5  Module density 1024MB with 8 dies and 1 rank


    Original     		PDF SEN01G64D1BF1SA-30R PC2-6400 1024MB Ch-9552

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Rev.1.0 04.05.2011 1024MB DDR3 – SDRAM SO-DIMM 204 Pin SO-DIMM Features: SGN01G64D2BG1MT-xxRT • 1GByte in FBGA Technology •  RoHS compliant   Options:   Data Rate / Latency DDR3 1066 MT/s CL7 DDR3 1333 MT/s CL9 Marking -BB -CC


    Original     		PDF 1024MB SGN01G64D2BG1MT-xxRT 204-pin 64-bit PC3-10600 MO-268.

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Rev.1.0 03.02.2011 2048MB DDR3 – SDRAM ECC SO-DIMM Features: 204 Pin ECC SO-UDIMM SGN02G72G1BG2SA-xxRT • 2GByte in FBGA Technology •     RoHS compliant Options:  Data Rate / Latency DDR3 1066 MT/s CL7 DDR3 1333 MT/s CL9 


    Original     		PDF 2048MB SGN02G72G1BG2SA-xxRT Oper81 CH-9552

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Rev.1.0 01.02.2011 1024MB DDR3 – SDRAM ECC SO-DIMM Features: 204 Pin ECC SO-DIMM SGN01G72F1BG1SA-xxRT • 1GByte in FBGA Technology •     RoHS compliant Options:  Data Rate / Latency DDR3 1066 MT/s CL7 DDR3 1333 MT/s CL9  Module Density


    Original     		PDF 1024MB SGN01G72F1BG1SA-xxRT

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Rev.1.3 23.11.2010 1GB DDR2 – SDRAM SO-DIMM Features: 200 Pin SO-DIMM • SEN01G64D1BH1MT-25R 1GB PC2-6400 in FBGA Technology RoHS compliant Options: • Data Rate / Latency DDR2 800 MT/s CL6 DDR2 667 MT/s CL5 DDR2 533 MT/s CL4  Module Density


    Original     		PDF SEN01G64D1BH1MT-25R PC2-6400 CH-9552

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Rev.1.0 14.01.2011 1024MB DDR3 – SDRAM UDIMM 240 Pin UDIMM Features: SGU01G64A1BG1SA-xxR • 1GByte in FBGA Technology •      RoHS compliant Options:   Data Rate / Latency DDR3 1066 MT/s CL7 DDR3 1333 MT/s CL9 Marking -BB


    Original     		PDF 1024MB SGU01G64A1BG1SA-xxR CH-9552

    strataflash 256 x 2 Mbits

    Abstract: Migration Guide for Intel StrataFlash Memory J 253854 Intel SCSP 253853
    Text: Intel StrataFlash£ Wireless Memory System LV18 SCSP 1024-Mbit LVX Family with LPSDRAM Datasheet Product Features • ■ ■ ■ ■ ■ Device Memory Architecture — Flash density: 128- and 256-Mbit — LPSDRAM density: 128, 256 Mbit — Top/Bottom parameter flash


    Original     		PDF 1024-Mbit 256-Mbit 16-KWord 64-KWord 32-Mbit 64-Mbit 128-Mbit 16-Mbit strataflash 256 x 2 Mbits Migration Guide for Intel StrataFlash Memory J 253854 Intel SCSP 253853

    RD38F3040L0YBQ0

    Abstract: flash "high temperature data retention" mechanism rd38f405 PF48F4400L Intel SCSP LV30 28F256L18 28F256L30 400000-40FFFF RD48F4400L
    Text: Intel StrataFlash£ Wireless Memory System LV18/LV30 SCSP 768-Mbit LVQ Family with Asynchronous Static RAM Datasheet Product Features • ■ ■ ■ ■ Device Architecture — Code and data segment: 128- and 256Mbit density; PSRAM: 32- and 64-Mbit density; SRAM: 8 Mbit density.


    Original     		PDF LV18/LV30 768-Mbit 256Mbit 64-Mbit 16-KWord 128-Mbit 256-Mbit RD48F3000L0YTQ0 NZ48F4000L0YTQ0 RD38F3040L0YBQ0 flash "high temperature data retention" mechanism rd38f405 PF48F4400L Intel SCSP LV30 28F256L18 28F256L30 400000-40FFFF RD48F4400L

    253854

    Abstract: x16D strataflash 512 p30 strataflash 256 x 2 Mbits 256l18
    Text: Intel StrataFlash£ Wireless Memory System LV18/LV30 SCSP 1024-Mbit LV Family Datasheet Product Features • ■ ■ ■ ■ Device Architecture — Flash die density: 128-, 256-Mbit — Top or Bottom flash parameter configuration Device Voltage — Core: VCC = 1.8 V (Typ)


    Original     		PDF LV18/LV30 1024-Mbit 256-Mbit 16-KWord 64-KWord 38F/48F 32-Mbit 128-Mbit 16-Mbit 253854 x16D strataflash 512 p30 strataflash 256 x 2 Mbits 256l18