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    STP60NE06 Price and Stock

    STMicroelectronics STP60NE06-16

    MOSFET N-CH 60V 60A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STP60NE06-16 Tube 1,000
    • 1 -
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    • 100 -
    • 1000 $0.91915
    • 10000 $0.91915
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    Bristol Electronics STP60NE06-16 18
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    Quest Components STP60NE06-16 249
    • 1 $2.92
    • 10 $2.92
    • 100 $1.46
    • 1000 $1.3505
    • 10000 $1.3505
    		Buy Now

    STMicroelectronics STP60NE06L-16

    MOSFET N-CH 60V 60A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STP60NE06L-16 Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.05998
    • 10000 $1.05998
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    SGS Thomson STP60NE06-16

    TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,60A I(D),TO-220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components STP60NE06-16 112
    • 1 $2.92
    • 10 $2.92
    • 100 $1.46
    • 1000 $1.46
    • 10000 $1.46
    		Buy Now

    STMicroelectronics STP60NE06L16

    N-CHANNEL 60V-0.014 OHM-60A TO-220 STRIPFET POWER MOSFET Power Field-Effect Transistor, 60A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA STP60NE06L16 1,050
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    STP60NE06 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STP60NE06 STMicroelectronics N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET Original PDF
    STP60NE06-16 STMicroelectronics N - CHANNEL ENHANCEMENT MODE - SINGLE FEATURE SIZE - POWER MOSFET Original PDF
    STP60NE06-16 STMicroelectronics Metal oxide N-channel FET, Enhancement Type Original PDF
    STP60NE06-16 STMicroelectronics N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE PO Original PDF
    STP60NE06-16 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STP60NE06-16FP STMicroelectronics Metal oxide N-channel FET, Enhancement Type Original PDF
    STP60NE06-16FP STMicroelectronics N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET Original PDF
    STP60NE06-16FP STMicroelectronics N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE PO Original PDF
    STP60NE06L-16 STMicroelectronics N-CHANNEL Power MOSFET Original PDF
    STP60NE06L-16 STMicroelectronics N-Channel 60 V - 0.014 ohm - 60 A TO-220 STripFET Power MOSFET Original PDF
    STP60NE06L-16 STMicroelectronics N-CHANNEL 60V - 0.014 Ohm - 60A - D2PAK, SINGLE FEATURE SIZE, POWER MOSFET Original PDF
    STP60NE06L-16 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STP60NE06L-16FP STMicroelectronics N-CHANNEL 60V - 0.014 ? - 60A TO-220-TO220FP ST Original PDF

    STP60NE06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STP60NE06-16FP

    Abstract: STP60NE06-16/FP STP60NE06-16
    Text: STP60NE06-16 STP60NE06-16FP N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE " POWER MOSFET TYPE V DSS R DS on ID STP60NE06-16 STP60NE06-16FP 60 V 60 V < 0.016 Ω < 0.016 Ω 60 A 35 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.013 Ω EXCEPTIONAL dV/dt CAPABILTY


    Original     		PDF STP60NE06-16 STP60NE06-16FP STP60NE06-16FP STP60NE06-16/FP STP60NE06-16

    p60ne06

    Abstract: P60NE0 P60ne Part Marking TO-220 STMicroelectronics STP60NE06-16 p60n STP60NE06 STP60NE06-16FP P60NE06FP
    Text: STP60NE06-16 STP60NE06-16FP N-CHANNEL 60V - 0.013 Ω - 60A TO-220/TO-220FP "SINGLE FEATURE SIZE " POWER MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STP60NE06-16 60 V < 0.016 Ω 60 A STP60NE06-16FP 60 V < 0.016 Ω 35 A FEATURES SUMMARY


    Original     		PDF STP60NE06-16 STP60NE06-16FP O-220/TO-220FP p60ne06 P60NE0 P60ne Part Marking TO-220 STMicroelectronics STP60NE06-16 p60n STP60NE06 STP60NE06-16FP P60NE06FP

    P60ne

    Abstract: P60NE0 p60ne06 p60n C15040 STP60NE06-16 STP60NE06-16FP P60NE06FP
    Text: STP60NE06-16 STP60NE06-16FP N-CHANNEL 60V - 0.013 Ω - 60A TO-220/TO-220FP "SINGLE FEATURE SIZE " POWER MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STP60NE06-16 60 V < 0.016 Ω 60 A STP60NE06-16FP 60 V < 0.016 Ω 35 A FEATURES SUMMARY


    Original     		PDF STP60NE06-16 STP60NE06-16FP O-220/TO-220FP O-220 P60ne P60NE0 p60ne06 p60n C15040 STP60NE06-16 STP60NE06-16FP P60NE06FP

    C4224

    Abstract: STP60NE06-16 STP60NE06-16FP O220-F
    Text: STP60NE06-16 STP60NE06-16FP N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE V DSS R DS on ID STP60NE06-16 STP60NE06-16FP 60 V 60 V < 0.016 Ω < 0.016 Ω 60 A 35 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.013 Ω EXCEPTIONAL dV/dt CAPABILTY


    Original     		PDF STP60NE06-16 STP60NE06-16FP C4224 STP60NE06-16 STP60NE06-16FP O220-F

    STP60NE-06L

    Abstract: STP60NE06L16
    Text: STP60NE06L-16 STP60NE06L-16FP  N - CHANNEL 60V - 0.014Ω - 60A TO-220/TO-220FP STripFET POWER MOSFET TYPE V DSS R DS on ID STP60NE06L-16 STP60NE06L-16FP 60 V 60 V < 0.016 Ω < 0.016 Ω 60 A 35 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.014 Ω


    Original     		PDF STP60NE06L-16 STP60NE06L-16FP O-220/TO-220FP STP60NE-06L STP60NE06L16

    STP60NE06L-16

    Abstract: STP60NE-06L STP60NE06L-16FP
    Text: STP60NE06L-16 STP60NE06L-16FP N - CHANNEL 60V - 0.014Ω - 60A TO-220/TO-220FP STripFET POWER MOSFET TYPE V DSS R DS on ID STP60NE06L-16 STP60NE06L-16FP 60 V 60 V < 0.016 Ω < 0.016 Ω 60 A 35 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.014 Ω


    Original     		PDF STP60NE06L-16 STP60NE06L-16FP O-220/TO-220FP STP60NE06L-16 STP60NE-06L STP60NE06L-16FP

    STP60NE06L-16

    Abstract: STP60NE06L-16FP
    Text: STP60NE06L-16 STP60NE06L-16FP N - CHANNEL 60V - 0.014Ω - 60A TO-220/TO-220FP STripFET POWER MOSFET TYPE V DSS R DS on ID STP60NE06L-16 STP60NE06L-16FP 60 V 60 V < 0.016 Ω < 0.016 Ω 60 A 35 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.014 Ω


    Original     		PDF STP60NE06L-16 STP60NE06L-16FP O-220/TO-220FP STP60NE06L-16 STP60NE06L-16FP

    Untitled

    Abstract: No abstract text available
    Text: * MODELLING FOR STP60NE06 .SUBCKT STP60NE06 1 2 3 LG 2 4 7.5n LS 12 3 0.06n LD 6 1 60n RG 4 5 3.334 RS 9 12 0.241779E-03 RD 7 6 0.997720E-02 RJ 8 7 0.193733E-04 CGS 5 9 3.3e-9 CGD 7 10 6.3e-9 CK 11 7 0.26e-9 DGD 11 7 DGD DBS 12 6 DBS DBD 9 7 DBD MOS 13 5 9 9 MOS L=1u W=1u


    Original     		PDF STP60NE06 STP60NE06 241779E-03 997720E-02 193733E-04 26e-9 190484E-03 195319E-09

    Untitled

    Abstract: No abstract text available
    Text: STP60NE06L-16  N - CHANNEL 60V - 0.014Ω - 60A TO-220 STripFET POWER MOSFET TYPE V DSS R DS on ID STP60NE06L-16 60 V < 0.16 Ω 60 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.014 Ω AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY


    Original     		PDF STP60NE06L-16 O-220

    p60ne06l-16

    Abstract: P60NE0 P60ne p60ne06 p60ne06l p60n
    Text: STP60NE06L-16  N - CHANNEL 60V - 0.014 Ω - 60A - D2PAK ”SINGLE FEATURE SIZE ” POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID ST P60NE06L-16 60 V <0.016 Ω 60 A • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.014 Ω AVALANCE RUGGED TECHNOLOGY


    Original     		PDF STP60NE06L-16 P60NE06L-16 175oC p60ne06l-16 P60NE0 P60ne p60ne06 p60ne06l p60n

    STripFET

    Abstract: STP60NE06L-16 STP60NE06L-16FP
    Text: STP60NE06L-16 STP60NE06L-16FP  N - CHANNEL 60V - 0.014Ω - 60A TO-220/TO-220FP STripFET POWER MOSFET TYPE V DSS R DS on ID STP60NE06L-16 STP60NE06L-16FP 60 V 60 V < 0.016 Ω < 0.016 Ω 60 A 35 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.014 Ω


    Original     		PDF STP60NE06L-16 STP60NE06L-16FP O-220/TO-220FP STripFET STP60NE06L-16 STP60NE06L-16FP

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    36v DC MOTOR SPEED CONTROLLER schematic

    Abstract: TD3403 1N4148 BS170 SO20 ST6252 STP30NE03L STP60NE06 TD340 TD340I
    Text: TD340 H-BRIDGE QUAD POWER MOSFET DRIVER FOR DC MOTOR CONTROL • QUAD N-CHANNEL MOSFET DRIVE ■ INTEGRATED CHARGE PUMP FOR HIGH SIDE MOSFET DRIVING ■ VERY LOW GROUND EMI NOISE ■ MOTOR SPEED AND DIRECTION CONTROL LOW SIDE PWM ■ INTERNAL OR EXTERNAL PWM SOURCE


    Original     		PDF TD340 25kHz TD340 36v DC MOTOR SPEED CONTROLLER schematic TD3403 1N4148 BS170 SO20 ST6252 STP30NE03L STP60NE06 TD340I

    IRF9310

    Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional


    Original     		PDF device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution

    ste30na50

    Abstract: STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20
    Text: SOT-223 VDSS RDS on max (V) (Ω) 30 0.05 0.06 0.12 0.12 0.12 0.27 0.45 1.50 20.0 60 100 200 800 Type STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN3NE06L STN2N10 STN2NE10L ✠ STN1N20 STN1NB80 ✠ ID(cont) DEVICES (A) REPLACED 4.0 4.0 3.0 3.0 3.0 2.0 2.0 1.0


    Original     		PDF OT-223 STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN2N10 STN2NE10L STN1N20 STN1NB80 ste30na50 STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20

    shunt resistor current motor

    Abstract: ts9221 diode R12 1n4148 zener diode operational amplifier discrete schematic 1N4148 AN1305 TD340 TS922 TS922A
    Text: AN1305 APPLICATION NOTE CURRENT MEASUREMENT AND LIMITATION IN TD340 BASED MOTOR CONTROL SYSTEMS by J. CAMIOLO and J-F GARNIER Two main configurations can be used: - sense resistor between the bottom of the H-bridge and the Gnd line low side sensing . - or sense resistor connected between the Vbat


    Original     		PDF AN1305 TD340 shunt resistor current motor ts9221 diode R12 1n4148 zener diode operational amplifier discrete schematic 1N4148 AN1305 TS922 TS922A

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    10k resistor- used at the input side of the comparator

    Abstract: TS9221 diode R12 operational amplifier discrete schematic 10k resistor- used at the input side of opamp comparator 1n4148 zener diode comparator circuit using op-amp 200mv shunt transistor built in resistors 47k 22k 1N4148
    Text: AN1305 APPLICATION NOTE CURRENT MEASUREMENT AND LIMITATION IN TD340 BASED MOTOR CONTROL SYSTEMS by J. CAMIOLO and J-F GARNIER Two main configurations can be used: - sense resistor between the bottom of the H-bridge and the Gnd line low side sensing . - or sense resistor connected between the Vbat


    Original     		PDF AN1305 TD340 10k resistor- used at the input side of the comparator TS9221 diode R12 operational amplifier discrete schematic 10k resistor- used at the input side of opamp comparator 1n4148 zener diode comparator circuit using op-amp 200mv shunt transistor built in resistors 47k 22k 1N4148

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    p60n

    Abstract: No abstract text available
    Text: STP60NE06-16 STP60NE06-16FP SGS-THOMSON !LiM iO S N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE ” POWER MOSFET TYPE V dss RüS on •d S T P 60 N E 06 -1 6 S T P 60 N E 06 -1 6FP 60 V 60 V < 0.0 16 £i < 0.0 16 a 60 A 35 A ■ TYPICAL RDS(on) = 0.013 Q


    OCR Scan     		PDF STP60NE06-16 STP60NE06-16FP p60n

    Untitled

    Abstract: No abstract text available
    Text: STP60NE06L-16 N - CHANNEL 60V - 0.014 £2 - 60A - D^PAK "SINGLE FEATURE SIZE ” POWER MOSFET PRELIMINARY DATA TYPE V dss R dS oii Id S T P 60N E 06L-1 6 60 V < 0 . 0 1 6 Q. 60 A . . TYPICAL Ros(on) =0.014 £2 AVALANCE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED


    OCR Scan     		PDF STP60NE06L-16 06L-1 AT100Â O-263

    FZ 44 NS

    Abstract: STP60NE06-16FI E0616
    Text: SGS-THOMSON STP60NE06-16 STP60NE06-16FI N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE V dss RDS on Id S T P 6 0 N E 0 6 - 16 S T P 6 0 N E 0 6 - 16FI 60 V 60 V < 0 .016 Q. < 0 .016 Q. 60 A 35 A . TYPICAL Ros(on) =0.013 £2


    OCR Scan     		PDF STP60NE06-16 STP60NE06-16FI STP60NE06-16/FI ISOWATT22Q FZ 44 NS STP60NE06-16FI E0616

    Untitled

    Abstract: No abstract text available
    Text: STP60NE06L-16 N - CHANNEL 60V - 0.014 Ü - 60A - D^PAK ’’SINGLE FEATURE SIZE ” POWER MOSFET PRELIMINARY DATA . . . . . . . . TYPE V dss R dS oii Id S TP60NE06L-1 6 60 V < 0 .0 1 6 Q. 60 A TYPICAL Ros(on) =0.014 C2 A VALANCE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    OCR Scan     		PDF STP60NE06L-16 TP60NE06L-1 AT100

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON STP60NE06-16 STP60NE06-16FP N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYP E V dss R D S o n Id STP60NE06-1 6 STP60NE06-1 6FP 60 V 60 V < 0.016 Q. < 0.016 Q. 60 A 35 A . TYPICAL Ros(on) =0.013 £2 . EXCEPTIONAL dV/dt CAPABILTY


    OCR Scan     		PDF STP60NE06-16 STP60NE06-16FP STP60NE06-1 STP60NE06-16/FP O-22QFP