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    STN454D

    Abstract: 100A Mosfet Stanson Technology STN454 n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR uis test APD50 MOSFET 20V 100A MOSFET 20V 120A 5025W
    Text: STN454D N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION STN454D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN454D has been designed specially to improve the overall efficiency of DC/DC converters using


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    PDF STN454D STN454D O-252 O-251 0V/12 O-252 O-252-2L 100A Mosfet Stanson Technology STN454 n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR uis test APD50 MOSFET 20V 100A MOSFET 20V 120A 5025W

    40V 60A MOSFET

    Abstract: STN45 STN454 STN4526 STN4546
    Text: 46 STN45 STN454 N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


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    PDF STN4546 STN454 STN4526 0V/10 STN4546 40V 60A MOSFET STN45 STN454

    Untitled

    Abstract: No abstract text available
    Text: STN454D N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION STN454D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN454D has been designed specially to improve the overall efficiency of DC/DC converters using


    Original
    PDF STN454D STN454D O-252 O-251 0V/12 O-252 O-251

    Untitled

    Abstract: No abstract text available
    Text: STN4186D N Channel Enhancement Mode MOSFET 35.0A DESCRIPTION STN4186D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN454D has been designed specially to improve the overall efficiency of DC/DC converters using


    Original
    PDF STN4186D STN4186D STN454D O-252 O-251 0V/20 0V/15 O-252 O-251