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    STG 4007 Search Results

    STG 4007 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    4007A/BCA Rochester Electronics LLC Replacement for National Semiconductor part number M38510/05301BCA. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    10155449-112LF Amphenol Communications Solutions Minitek MicroSpaceXS 1.27mm Crimp-to-Wire Connector Platform, wire-to-wire, Header, 3 Position, STG Visit Amphenol Communications Solutions
    10155449-113LF Amphenol Communications Solutions Minitek MicroSpaceXS 1.27mm Crimp-to-Wire Connector Platform, wire-to-wire, Header, 4 Position, STG Visit Amphenol Communications Solutions
    10155520-A008LF Amphenol Communications Solutions Minitek MicroSpaceXS 1.27mm Crimp-to-Wire Connector Platform, wire-to-wire, Header, 11 Position, STG Visit Amphenol Communications Solutions
    10155449-111LF Amphenol Communications Solutions Minitek MicroSpaceXS 1.27mm Crimp-to-Wire Connector Platform, wire-to-wire, Header, 2 Position, STG Visit Amphenol Communications Solutions

    STG 4007 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IN4001G

    Abstract: 4002G 4005G 4006G 1N4001G-4007G
    Text: 1N4001G-4007G GLASS PASSIVATED RECTIFIER VOLTAGE RANGE CURRENT FEATURES 50 to 1000 Volts 1.0 Ampere Glass passivated chip junction Low forward voltage drop DO-41 .034 0.9 Low reverse leakage DIA. .028(0.7) High forward surge current capability 1.0(25.4) High temperature soldering guaranteed:


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    PDF 1N4001G-4007G DO-41 UL94V-0 MIL-STD-202E 300us 50mVp-p IN4001G 4002G 4005G 4006G 1N4001G-4007G

    UF4001-4007

    Abstract: No abstract text available
    Text: UF4001-4007 VOLTAGE RANGE CURRENT FEATURES 50 to 800 Volts 1.0 Ampere Low power loss,high efiiciency. Low leakage. .034 0.9 High speed switching. .028(0.7) High current capability. DO-41 DIA. 1.0(25.4) High surge capability. MIN High temperature soldering guaranteed:


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    PDF UF4001-4007 DO-41 UL94V-0 MIL-STD-202E 50mVp-p 50/100ns/cm UF4001-4007

    VPS05605

    Abstract: transistor marking 47s bas 44 marking 47s
    Text: BAS 40-07W Silicon Schottky Diode Preliminary data 3 • General-purpose diode for high-speed switching 4 • Circuit protection • Voltage clamping • High-level detecting and mixing • Available with CECC quality assessment 2 1 VPS05605 BAS 40-07W Type


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    PDF 0-07W VPS05605 Q62702- OT-343 Sep-09-1998 VPS05605 transistor marking 47s bas 44 marking 47s

    M2097001

    Abstract: delphi Packard 56 Series 02973779 02977253 M3592024 packard 56-Series 21N06 M2097002
    Text: 11 12 $ B 10 A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON AN INDIVIDUAL COMPONENT DRAWING. H MISSING NUMBERS SYMBOL DEFINITION TOTAL NO. OF SYMBOLS ON DRAWING 8 LAST NO. USED 8 DWG STATUS DATE STG REV N/P CHG


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    PDF 170C00 03AU04 R-67550! PM-661-001; R-71753! 27SE05 12MR07 M3592002 M2097001 delphi Packard 56 Series 02973779 02977253 M3592024 packard 56-Series 21N06 M2097002

    IC 4007

    Abstract: RP35 ic C525A STK power amplifier stk power amplifier ic STK-083 DBA30C stk083 rp35 TC 4007 n
    Text: STK-083 Thick Film Hybrid IC 2 Power 4 0 W min. AF Power Amplifier 21DJI 40W min A F ' \ ° r7 - 7 , > 7 ' “ ★ IM S T system. C 525A Ä * $ » /T a = 25“C unit Vqq max TC IJ fW l c if t ig f ?-fê ] SS >imiüÊ T Stg mmtli'P*#/Ta=25°C féaffama


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    PDF STK-083 C525A 20kHz 20kHz DBA30C RP-35* IC 4007 RP35 ic C525A STK power amplifier stk power amplifier ic STK-083 stk083 rp35 TC 4007 n

    Untitled

    Abstract: No abstract text available
    Text: • b b 53 tm □ □ 2b ac}7 13T APX N AMER PHILIPS/DISCRETE 1N 4001ID TO 1N 4007ID bTE D J V _ SILICON DIFFUSED RECTIRER DIODES This data sheet contains a range of silicon rectifier diodes for general purpose use. QUICK REFERENCE DATA


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    PDF 4001ID 4007ID 4002ID 4003ID 4004ID 4005ID 4006ID 1N4001ID N4001ID

    diode 4007

    Abstract: 4005G 4006G 4007G 4003G 4002G ln4001 1N4001G IN 4007g 4004G
    Text: • oost.ñ'm 4 ? t « a p x N APIER P H I L I P S / D I S C R E T E 1N4001G to 4007G bTE D SILICON DIFFUSED RECTIFIER DIODES A range o f silico n re c tifie r diodes fo r general purpose use. Q U IC K R E F E R E N C E D A T A 1N4001G 4002G 4003G 4004G 4005G


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    PDF 1N4001G 4007G 4002G 4003G 4004G 4005G 4006G OD-57. diode 4007 4007G ln4001 IN 4007g

    SOD-81

    Abstract: 1N4007ID sod 81 4004ID 4007 1N4001ID
    Text: m bb5 3 cl31 GGabaT? lä^ BiAPX N AMER PHILIPS/DISCRETE 1N4001ID TO 1N4007ID b^E J> SILICON DIFFUSED RECTIFIER DIODES This data sheet contains a range o f silicon rectifier diodes for general purpose use. Q U IC K R E F E R E N C E D A T A 1 N 4 0 0 1ID 40021D 4 0 0 3 ID 4 0 0 4 ID 4 0 0 5 ID 4 0 0 6 ID 4007 ID


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    PDF bb53cl31 1N4001ID 1N4007ID 4002ID 4003ID 4004ID 4005ID 4006ID OD-81e SOD-81 1N4007ID sod 81 4007

    02973779

    Abstract: M2097001
    Text: 12 11 10 B MISSING SYMBOLS SYMBOL DEFINITION A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTIONIT MAY BE CONTROLLED ON THE INDIVIDUAL COMPONENT DRAWING. ( 4X 16 ì ( 2X 1 3 ) 4X R .312 TYP H — 2X .025 TYP TOTAL NO OF INSPECTIONS


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    PDF 03MR04 100C05 12MR07 M3592002 15FE01 15FE01 02973779 M2097001

    2SC3050

    Abstract: 2SC3178 2SC306 2SC3059 NPN Transistor VCEO 1000V 2SC3118 2SC3060 2SC3061 NPN transistor for switching applications, 400V fujitsu RET transistors
    Text: F U J I TS U M I C R O E L E C T R O N I C S 31E D Bi 3 7 M ci7ti2 O ü l b S T O □ IHFfll c P r - 3 3 *-nr U l T T f T January 1990 Edition 1.1 rU JllbU "= " PRODUCT PROFILE ' 2SC3178, 2SC3059, 2SC3060, 2SC3061 Silicon High Speed Power Transistor_


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    PDF 2SC3178, 2SC3059, 2SC3060, 2SC3061 2SC3050 2SC3178 2SC306 2SC3059 NPN Transistor VCEO 1000V 2SC3118 2SC3060 2SC3061 NPN transistor for switching applications, 400V fujitsu RET transistors

    Untitled

    Abstract: No abstract text available
    Text: 24 23 22 19 20 21 17 IB 16 15 13 14 11 12 V 10 8 7 SYMBOL DEFINITION A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON AN INDIVIDUAL COMPONENT DRAWING. M K • - f J V_l V f w w ^ 4. 4» w CD 7 A * A T A y A T A T ~


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    PDF 07N001 Z1JA02 02MR99 16AP99 07-Mar-07

    D0-201AD

    Abstract: UF4007 UF5400 UF5408
    Text: UF4001 THRU UF4007 MINIATURE ULTRAFAST EFFICIENT PLASTIC RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT- 1.0 Ampere FEATURES ♦ Plastic package has Underwriters Laboratory Flammabiiity Classification 94V-0 ♦ 1.0 Ampere operation at Ta =55°C with no ther­


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    PDF UF4001 UF4007 DO-41 MIL-STD-202, F5405 UF6406 UF540Ã D0-201AD UF5400 UF5408

    KL SN 102 94v-0

    Abstract: diode EGP 30D circuit diagram of 5kw smps full bridge MELF ZENER DIODE color bands blue y-349 diode GI 2W06G DO-213AB smd diode color marking code 6j 507 SMD TRANSISTOR smd diode marking g2a zener Marking BJ9
    Text: General Instrument / Power Semiconductor Division / I * r .jr > / INTRODUCTION General Instrument Corporation is a world leader in developing technology, systems and product solutions for the interactive delivery o f video and data. G l’s success results


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    BFT65

    Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
    Text: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions


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    1N4001SP

    Abstract: No abstract text available
    Text: Datasheet Central 1N4001SP SERIES 1.0 AMP SILICON RECTIFIER 50 THRU 1000 VOLTS Semiconductor Corp. 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 DO-41 SP CASE M anufacturers of W orld C lass Discrete S em iconductors


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    PDF 1n4001sp d0-41sp 4002SP 4003SP 4004SP 4005SP 4006SP 4007SP DQ-41

    Untitled

    Abstract: No abstract text available
    Text: LL4001G THRU LL4007G TSC S 1.0 AMP Surface Mount Glass Passivated Silicon Rectifiers Voltage Range 50 to 1000 Volts Current 1.0 Ampere MELF Features SOLDERABLE END Surge overload ratings to 30 amperes peak Ideal for printed circuit board Reliable low cost construction utilizing


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    PDF LL4001G LL4007G 4001G 4002G 4003G 4004G 4005G -125C afl3S54b 00DD7C

    LL4001G

    Abstract: 4002G 4005G 4006G LL4007G
    Text: TSC LL4001G THRU LL4007G 1.0 AMP Surface Mount Glass Passivated Silicon Rectifiers Voltage Range 50 to 1000 Volts Current 1.0 Ampere MELF Features SOLDERABLE END A ♦ ♦ Surge overload ratings to 30 amperes peak Ideal for printed circuit board Reliable low cost construction utilizing


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    PDF LL4001G LL4007G 4001G 4002G 4003G 4004G 4005G 4006G 4007G LL4007G

    Untitled

    Abstract: No abstract text available
    Text: TSC E 1N4001G THRU 1N4007G 1.0 AMP. Glass Passivated Rectifiers Voltage Range 50 to 1000 Volts Current 1.0 Ampere 30-41 Features -y- Low forward voltage drop High current capability High reliability High surge current capability I i- I .107 2.7 .080 (2.0)


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    PDF 1N4001G 1N4007G MIL-STD202, 4003G aa3554b B355Mb D00G73b

    stk power amplifier ic

    Abstract: STK024 STK-02 STK power amplifier T7 4007 C385A STK-024 2 x 20w amplifier STK hybrid amplifier
    Text: STK-024 Thick Film Hybrid 1C 2 0 W min. AF Power Am plifier 2 0 W m in ★ IM S T system. C 385A • 1 • • t ä fle t 20W #) > 3 *?ÜfÄM'' 2 t'. 1^ V ^ "/ £ ^ Æ f ê / T a=25°C JfeAitiltÆ t/j fT:B# IC: -#*>mM. r&|A t) 'f u n it t.°v o-8faj


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    PDF STK-024 20Wmin C385A 27raV, stk power amplifier ic STK024 STK-02 STK power amplifier T7 4007 C385A STK-024 2 x 20w amplifier STK hybrid amplifier

    1N4000 silicon diodes

    Abstract: 1N4000 - 1N4007 1n4000 1n4000 a 1n4007
    Text: 1N4001 . 1N4007 BY133. P513 FA G O R^ 1Amp. Silicon Rectifier Diodes Dimensions in mm. DO-15 Plastic Voltage 50 to 1.600 V. Ï ! to ; 1— il_ o\ Ç.35 58.5 Current 1.0 A. at 75°C. a t r0 .2 0.5 • Low cost • Diffused junction • High current capability


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    PDF 1N4001 1N4007 BY133. DO-15 1N4000 1N4000 silicon diodes 1N4000 - 1N4007 1n4000 a 1n4007

    DL4001-DL4007

    Abstract: No abstract text available
    Text: DL4001 DL4007 VISHAY 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER /UTEMir I POWER SEHCONNJCTOR/ Features Glass Passivated Junction High Current Capability Low Forward Voltage Drop High Reliability and Low Leakage For Surface Mount Application Plastic Material - UL Flammability


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    PDF DL4001 DL4007 MIL-STD-202, DS16001 DL4001-DL4007 DL4001-DL4007

    TELEVISION EHT TRANSFORMERS

    Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
    Text: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes


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    PDF LCD01 TELEVISION EHT TRANSFORMERS BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31

    Mullard Mullard quick reference guide

    Abstract: CV7476 CV7143 CV8805 BZV46 CV 7476 mullard CV7099 CV7100 diode mullard germanium BYW 64 bridge rectifier
    Text: The Mullard Technical Handbook i t made up of four sets of Books, each comprising several parts:Book 1 light blue Sem iconductor Devices Book 2 (orange) Valves and Tubes Book 3 (green) Com ponents, M aterials and Assem blies Book 4 (purple or dark blue)


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    PDF BZX91 1N825 1N827 1N829 1N914 1N916 1N4001G, CV7367 1N4002G, CV7756 Mullard Mullard quick reference guide CV7476 CV7143 CV8805 BZV46 CV 7476 mullard CV7099 CV7100 diode mullard germanium BYW 64 bridge rectifier

    Untitled

    Abstract: No abstract text available
    Text: UF4/HER1 SERIES REVERSE VOLTAGE FORWARD CURRENT ULTRA FAST RECTIFIERS to 1 0 0 0 Volts - 1 . 0 Amperes -5 0 DC> -4 1 FEATURES • L ow co st • D iffused junction • Ultra fast sw itching for high efficiency • L ow reverse leakage current • L ow forw ard voltage drop


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    PDF DO-41